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85 Threads found on edaboard.com: 0 13um Technology
Hello Everyone, I want to design LNA with below requirements. Can anyone please help in designing LNA? I am using 0.13um technology and Synopsis hspicerf simulator. I am quite beginner so I am not sure where to start and how to proceed. I looked an example in Thomas Lee book and other online but not getting clear idea. Rin = 50 ohm Rout=50
Hi can any body send me the model file of 0.13um technology or give me link where i can get it?u r help is greatly appreciated
In a 0.13um process are the caps MIM caps? If so, you can NOT stack them With a 1fF/(?m)? cap value I suppose it's a MOM cap. They can be stacked.
Iam designing VCO using UMC0.13um technology in cadence .Iam getting the results with pinductor from analog library.But when i replace this inductor with technology inductor simulator showing error "unable to oscillate swing at the output node is very small".can any one explain.Thanks in advance.
I am working on design of CMOS second generation current controlled current conveyors (CCCII+). I am working in 0.13um CMOS technology. I am stuck with the design of W/L ratios of the transistors. Can anyone please help me how to design the W/L ratios of the design in this technology. If you have any link that can help me, please post it. If (...)
0.13um actually means poly pitch i.e half width of a minimum poly allowed in the technology + min distance between the two min width poys
10.x um^2 (5.0x * 1.9x)in tsmc/umc/csm/smic .18 technology
Hello, I am looking for process information on CMOS 0.13um process technologies for RF and Analog Circuits. Questions like why I would use 0.13 vs. 0.18, any documentation anyone has on these processes, papers, thesis or whatever, inductors, capacitors, varactors, and so on. Thanks
ON WHAT BASICS IS THAT THE technology SHRINKAGE IS DONE? 0.25um =>0.15um=>0.13um=>0.09um=>0.065um=>0.045um...NEXT WHAT ? what makes the gate lenght reduce in this fashion? what will happen after 0.45um?
I think it is also up to the LDO SPEC, most people like to use 0.6u~0.25um to design power management circuit.
I am desigining some circuit which is highly dependent on the parasitic capacitance, esp. the matching of the capacitance at different location. I am wondering how reliable is the parasitic extracted cap of the cadence. Is there any special layout technique to improve the reliability? Since I am using 0.13um technology, I need to add some fi
Hi, has anyone used cmrf8sf tech before? I am stucked with nfet transistor (nfet_inh and nfet_rf are okay). How can I connect the B-terminal to ground in layout? Do I use nTiedown? I have tried subc, nTiedown, not working. Any suggestions? Thanks!
If two identical digital core circuits, which are, implemented in 0.18um and 0.13um, respectively. What's the power consumption relation between the two implementations? Any rule of thumb or simple calculation? Thanks,
i was working on 0.18um, now i want to design the first 0.13um chip for me. i want to know what are different. thanks.
0.13um technology and technology under 0.13um have bigger percentage of leakage power. multiple Vt std library( low, normal, high Vt) are used for reducing leakage power . They have same area. low Vt ( fast, bigger leakage) , high Vt ( slow, smaller leakage)
Don't worry 65nm is almost the same as 90nm and up.
Is the flicker noise corner frequency at 65nm higher than the bandwidth for most communication standards? So between 10-50MHz depending on on device size. Is the gm variability of the minimum length devices about 50%? Is the threshold voltage shift after 1year and 70°C 10-20%? Who models all these effects? Who take care of these effects
Hi all, can someone tell me the least technology used in the industry today for analog/RF design. I had heard that 0.13um is the least for analog/RF design. Is it true? has anyone done any design on analog/RF at technology lesser than 0.13um. Thanx in advance chethan
Hi, Micron tehcnology ==> 1um, 2um, 3um, etc sub-micron techology ==> 0.8um, 0.6um, 0.35um 0.25um etc deep sub-micro technology ==> 0.18um, 0.13um nanotechnoogy ==> 90nm, 65nm etc Basically, use the words "sub" and "deep" as in the English defination of the words. Regards, Eng Han
Hi all I work with 0.13um tech and I can confirm to you that in this tech, there is 6 layer metal Level. I still ready to answer for particular questions gafsos
Has anyone used mimcap with the chartered 0.13um RF technology? If so did you have any problems? Thanks.
A problem on hot carriers effect of 0.13um CMOS technology The process used is 0.13um CMOS technology, and the analog nmos and pmos used have the min. channel length about 0.4um and the tox is about 5.2nm. During the I-V simulation of the NMOS(1um/0.4um) and it is found that the output resistance have the four region: (...)
Hi, I am trying to simulate some circuits on my home PC using WinSpice. I was wondering if someone could direct me to spice models in 0.13 micron technology. There are models available for MOSFETS but no models for resistors and capacitors. I don't wish to use ideal elements. Please help
no bsim 3v3 not model the gate leakage. only bsim4 have model for gate leakage. i think you should consider reading bsim4 manual. you might get something from it. as far as i know, 0.13? is modeled using bsim3v3. 90nm process and below might use bsim4 since at that process gate leakage may has significant impact to circuit performance.
Any one can tell me there are what differences between 0.13um and 0.18um, when I run Astro. :DThanks.
standard CMOS is logic CMOS except that there are Mix-Signal CMOS tech. The diference is that: 1. MIM capacitor 2. Thick top metal 3. Deep N well 4. VTH tuned mos etc. 0.18um 0.13um 0.25um 0.35um 90nm 65ns has also to be considered.
hii...i'm chaitanya ...i'm doin my B.E 3RD in E.C.E.....i'm doing a mini project on designing a 114ghz vco in 0.13um cmos technology ....plz can anyone help regarding this..i've some prob in designing the attaching the file regarding this..
Hi all I am using 0.13um UMC rf technology files I wonder how to know Vdd & Cox for that technology and Vt for every transistor I mean how to know the values of the parameter of that technology Any one can help ?? send me the values if he know or tell me how to know it Thanx regards Salem
flxrouter4400, I am using SMIC0.13um technology. What is the simple method to slot?
It depend on your what technology and process you use . The thickness of 300mm wafer is about 650-780um. the conductivity is different for Bipolar and cMOS technology. for cmos tech it mostly use high resistance p- substrate . for bipolar tech it mostly use low resistance substrate(heavily doped n+/p+). if you think this helps ,plz press the "
We know the channel noise of MOSFET can be expressed as 4kTγgd0(γ=2/3 for long channel). When it comes to deep sub-micro technology,its value is much higher than 2/3. The question is when I simulate the LNA noise figure in spectre RF, according to the simulated results, I found γ is much closer with 2/3. I wonder how the simulat
i need cadence Ic Design 0.18um &0.13um library.if you have this files please send
90nm or .13um
I am planing to learn ckt design at home. i have managed to get cadence pspice a/d simulator. Now i need some device models to start. where can i get ? can i use it with this tool ?
the straps are used to reduce the IR drop! with 0.13um technology , hou much voltage will the 1400um length wire bring on ? I ......
Hi Everyone, I'm gonna design a bandgap voltage reference in 0.13um technology with 1.2V supply. can any one tell me how to start?. which topology i should choose? and if there is a numerical example it would be great. thnanks in advance, banosey
Hi, Input/output delay can be easily seen at 4 GHz. The only way to overcome that is to use minimum transistor sizes. I dont think also that there is a way to have a 50% duty cycle directly from the DFFs. My idea is to use a simple clock adjuster that ANDs the Clock with itself delayed by Δt.
Hi, I am drawing the layout for my design using IBM 0.13um CMOS technology (virtouso). This is my first time using the IBM process so I have a few questions about the layout drawing. 1/ what is the different between pin and pad? When I insert input and output pins in my layout, the LVS can recognize them as IO Ports. 2/ Are the pads requi
A simple clock generator would be a constant current feeding into a cap and using a comparator to look at cap slope to Vref ~ compare and reset cap and repeat. This comparator then just flips a D flip flop which then generates your 50K clock. Then you make an non overlapping nand latch to make your phi1 and phi2. hope this helps Jgk
hi all i am working on a sigma delta modulator using .13um technology and i want an output from the DAC ranging from .225 to 1.575 and my Vdd=1.8 so i can't do that as my common mode input is .9 how can i do this big swing DAC
hello alll... i m bit new to T-spice.. when i searched for 0.13um technology file from MOSIS, i came to know across such words and whatever file i have downloaded could not worked with my netlist which was generated with tspice 0.18um cmos... can anyone explain why?? what are such things?? thank you..
Hi, Iam doing a layout on Low Noise Ampifier in 0.13um technology using Assura Layout XL. I have encountered with DRC errors such as 1. Minimum DIFFUSION Density over 500x500 um^2 is 20% 2. Minimum PO1 density over 1000x1000 um^2 is 15%. Can anyone please give me a solution to solve these errors. And also, I want to know the reason, why d
Hi everyone, I an new here and this is my first post. I am a newbie to ASIC and as part of my semester project I am implementing a 3TDRAM. I am using 0.13um technology and Cadence Hspice and Spectre tools. I am running into some simulator issues. 1. I initially started in hspice but realised I had to do monte Carlo so i switched to Spectre. But w
I have used the ideal Gm cell and capacitor to compose a 3rd order chebychev Gm_C low pass filter.The simulation results are as follows: voltage gain=20dB, -1dB BW=10MHz,the steepness of 20MHz is 21dB. But when I design the circuits with TSMC 0.13um technology, using the same Gm and capacitor values and filter structure, voltage gain
Dear All, I need to estimate the power of my designed circuit in Synopsys power compiler(of design compiler). I have .db file(library) for TSMC 0.18um technology, but it doesn't include SRAM , and it recognize all of my SRAMS(about 3Kbit) block as DFF, which cause a lot of extra power consumption. I am looking for another
What are the advantages and disadvantages of the 0.5um and 0.13um technology ?
Hello guys. I am using UMC 0.13um RF technology to design a TIA. I am facing problems with Assura QRC verification. An error message appears: ERROR (ASSREXT-88016): cap ground signal 'agnd' cannot be found. Check if net 'agnd' exists in design ad has the correct ?netNameSpace (Schematic, Layout) specified in RSF. if the ground signal name c
Anyone have 90 nm cmos models ? thanks
Can anybody share me some information about the average or approximate gate count numbers for following ASIC building blocks? 1)16*16 booth multiplier 2) two 16bit inputs ALU, traditional arithmetic(add,sub....) and logic (and,or,xor....) operations supported 3)16bit Barrel shifter,supporting traditional logic shift and arithmetic shift 4)16*16
Careful though. For standby conditions 0.13um can be worse than 0.18um because the off-state leakage of the mos devices is higher.