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57 Threads found on edaboard.com: 0 13um Technology
Cox = eox/tox = 3.5 x 10^-17 F/um / 5.141 x 10^-9 m = 6.8 fF/(?m)2 Probably a 0.25 or 0.18?m technology, so Wmin should be in this order.
If you have SPICE, HSPICE, or ELDO models in your SIL design kit, there's not too much to be changed for the LTSPICE flavor, s. these examples: 106128 106129
Hi, i have designed a LNA using cadence 0.13um cmos technology with bandwidth of 4-6 GHz. My dc and sp simulation run well but my pss simulation keep terminating and show me there is an error. Can anyone please help? I have attached the related images104761104762104763 here.
Hi, I wonder could HSPICE give the value of capacitors and inductors that are defined in standard processes such as 0.13um? as you might know in a technology library file for a specific process, electronic elements such as MOSFETs, resistors and also capacitors and inductors are defined by determining their length and width, so for example you can'
Hello guys. I am using UMC 0.13um RF technology to design a TIA. I am facing problems with Assura QRC verification. An error message appears: ERROR (ASSREXT-88016): cap ground signal 'agnd' cannot be found. Check if net 'agnd' exists in design ad has the correct ?netNameSpace (Schematic, Layout) specified in RSF. if the ground signal name c
What are the advantages and disadvantages of the 0.5um and 0.13um technology ?
I am working on design of CMOS second generation current controlled current conveyors (CCCII+). I am working in 0.13um CMOS technology. I am stuck with the design of W/L ratios of the transistors. Can anyone please help me how to design the W/L ratios of the design in this technology. If you have any link that can help me, please post it. If (...)
Hello Everyone, I want to design LNA with below requirements. Can anyone please help in designing LNA? I am using 0.13um technology and Synopsis hspicerf simulator. I am quite beginner so I am not sure where to start and how to proceed. I looked an example in Thomas Lee book and other online but not getting clear idea. Rin = 50 ohm Rout=50
I have used the ideal Gm cell and capacitor to compose a 3rd order chebychev Gm_C low pass filter.The simulation results are as follows: voltage gain=20dB, -1dB BW=10MHz,the steepness of 20MHz is 21dB. But when I design the circuits with TSMC 0.13um technology, using the same Gm and capacitor values and filter structure, voltage gain
Hi everyone, I an new here and this is my first post. I am a newbie to ASIC and as part of my semester project I am implementing a 3TDRAM. I am using 0.13um technology and Cadence Hspice and Spectre tools. I am running into some simulator issues. 1. I initially started in hspice but realised I had to do monte Carlo so i switched to Spectre. But w
hello alll... i m bit new to T-spice.. when i searched for 0.13um technology file from MOSIS, i came to know across such words and whatever file i have downloaded could not worked with my netlist which was generated with tspice 0.18um cmos... can anyone explain why?? what are such things?? thank you..
Hi all, I got a new TSMC .13um kit from MOSIS. But I am having problems accessing them. It has separate technology file(.tf) and the lef files. Because of this I am unable to import the design into the encounter. Its an ARM processor. Has anyone done this before. Could you please guide me as in if I had to write the tech header and layer defini
hi all i am working on a sigma delta modulator using .13um technology and i want an output from the DAC ranging from .225 to 1.575 and my Vdd=1.8 so i can't do that as my common mode input is .9 how can i do this big swing DAC
I design all circuits using TSMC 0.13um CMOS technology and simulate using the BSIM3v3 model with level 49 technology file. I want to use cadence for layout of these, How can I get a pproper libaray of 0.13u technology and work with it.
Iam designing VCO using UMC0.13um technology in cadence .Iam getting the results with pinductor from analog library.But when i replace this inductor with technology inductor simulator showing error "unable to oscillate swing at the output node is very small".can any one explain.Thanks in advance.
Iam using a onchip capacitance of 50pF as a coupling capacitance.a 100umX100um giving 10pF capacitance.iam using five capacitos of 10pF each in parallel.can i place these capacitors one over the other.if it is so maximum how many capacitors placed one over other.iam using 0.13um technology.pls explain.thanks in advance
Transistor length depends on the technology. 45nm, 65nm, 90nm, 0.13um,..... it varies.
Hi, I am drawing the layout for my design using IBM 0.13um CMOS technology (virtouso). This is my first time using the IBM process so I have a few questions about the layout drawing. 1/ what is the different between pin and pad? When I insert input and output pins in my layout, the LVS can recognize them as IO Ports. 2/ Are the pads requi
Hi, Input/output delay can be easily seen at 4 GHz. The only way to overcome that is to use minimum transistor sizes. I dont think also that there is a way to have a 50% duty cycle directly from the DFFs. My idea is to use a simple clock adjuster that ANDs the Clock with itself delayed by Δt.
Hi Everyone, I'm gonna design a bandgap voltage reference in 0.13um technology with 1.2V supply. can any one tell me how to start?. which topology i should choose? and if there is a numerical example it would be great. thnanks in advance, banosey
Hello everyone! I need some info, pdf's or anything you can help me with about 90nm technology process. Comparison to other technologies, anything you have please post it, will be very thankful! Thank you.
the straps are used to reduce the IR drop! with 0.13um technology , hou much voltage will the 1400um length wire bring on ? I ......
Hi I am trying to design a buffer whose input varies from 0 to Vdd, (almost from zero to almost Vdd) and has a minimum level shift. Any suggestions? The frequency is about 5 Ghz in 0.13um CMOS technology. Thanks
Dear All, Now I am building a transformer in ADS momentum based on 0.13 um RFCMOS process. The substrate file (.slm) should have 8 metal layers, between every two metal layers, there are 4 dielectric layers. That means there are almost 40 layers in the substrate file (.slm) totally. However, the ADS Mom cann't afford
90nm or .13um
i need cadence Ic Design 0.18um &0.13um library.if you have this files please send
It depend on your what technology and process you use . The thickness of 300mm wafer is about 650-780um. the conductivity is different for Bipolar and cMOS technology. for cmos tech it mostly use high resistance p- substrate . for bipolar tech it mostly use low resistance substrate(heavily doped n+/p+). if you think this helps ,plz press the "
flxrouter4400, I am using SMIC0.13um technology. What is the simple method to slot?
A long file is available for 90n , or any other techonology , could we link that file to our mos model directly. without editing manually for DAC utility. for ex . * * Predictive technology Model Beta Version * 0.13um NMOS SPICE Parametersv (normal one) * .model NMOS NMOS Level = 49 Lint = 2.5e-08 Tox = 3
hii...i'm chaitanya ...i'm doin my B.E 3RD in E.C.E.....i'm doing a mini project on designing a 114ghz vco in 0.13um cmos technology ....plz can anyone help regarding this..i've some prob in designing the attaching the file regarding this..
hii...i'm chaitanya ...i'm doin my B.E 3RD in E.C.E.....i'm doing a mini project on designing a 114ghz vco in 0.13um cmos technology ....plz can anyone help regarding this..i've some prob in designing the attaching the file reagrding this..
standard CMOS is logic CMOS except that there are Mix-Signal CMOS tech. The diference is that: 1. MIM capacitor 2. Thick top metal 3. Deep N well 4. VTH tuned mos etc. 0.18um 0.13um 0.25um 0.35um 90nm 65ns has also to be considered.
Any one can tell me there are what differences between 0.13um and 0.18um, when I run Astro. :DThanks.
no bsim 3v3 not model the gate leakage. only bsim4 have model for gate leakage. i think you should consider reading bsim4 manual. you might get something from it. as far as i know, 0.13? is modeled using bsim3v3. 90nm process and below might use bsim4 since at that process gate leakage may has significant impact to circuit performance.
Hi, I am trying to simulate some circuits on my home PC using WinSpice. I was wondering if someone could direct me to spice models in 0.13 micron technology. There are models available for MOSFETS but no models for resistors and capacitors. I don't wish to use ideal elements. Please help
A problem on hot carriers effect of 0.13um CMOS technology The process used is 0.13um CMOS technology, and the analog nmos and pmos used have the min. channel length about 0.4um and the tox is about 5.2nm. During the I-V simulation of the NMOS(1um/0.4um) and it is found that the output resistance have the four region: (...)
When the technology goes into ultra deep submicron such as 0.13um, 0.09um, What's the major challenge of CMOS RFIC design in this era? We know the advantage of scaling is higher cut off frequency which means lower minimum NF of LNA inherently. But what's the other issue?
Has anyone used mimcap with the chartered 0.13um RF technology? If so did you have any problems? Thanks.
Soft Macro: - RTL source code in Verilog/VHDL which can be synthesized into different technology libraries. - Example: ARM7TDMI source code - Can be targeted into user-defined process technology, such as TSMC 0.18um or UMC 0.13um, .... - Provided in VHDL(.vhd) or Verilog(.v) format (...)
Hi, Micron tehcnology ==> 1um, 2um, 3um, etc sub-micron techology ==> 0.8um, 0.6um, 0.35um 0.25um etc deep sub-micro technology ==> 0.18um, 0.13um nanotechnoogy ==> 90nm, 65nm etc Basically, use the words "sub" and "deep" as in the English defination of the words. Regards, Eng Han
Hi all I work with 0.13um tech and I can confirm to you that in this tech, there is 6 layer metal Level. I still ready to answer for particular questions gafsos
Hi all, can someone tell me the least technology used in the industry today for analog/RF design. I had heard that 0.13um is the least for analog/RF design. Is it true? has anyone done any design on analog/RF at technology lesser than 0.13um. Thanx in advance chethan
Don't worry 65nm is almost the same as 90nm and up.
i thinks u wanna know Nano-meter technology. below 0.13um design should called nanometer technology. due to high gate count in design and power and area effiecient we mainly focus on nanometer technology. when ur design doesnt contain any area/power constraints then u can go for older technology 0.18um (...)
Process technology: .18um --> .13um --> 90nm --> 65nm Challenges just like linuxluo mentioned above, 1) Leakage power, 2) SI (crosstalk), and 3) Yield are physical/implementation related. RTL coding does not have much to do with them. ---------------------------------------------------------------------------------- However f
Hi can any body send me the model file of 0.13um technology or give me link where i can get it?u r help is greatly appreciated
my design target is 1nH one in 0.13um CMOS technology. i would like to know whether that software is good for such design. thanks.
i was working on 0.18um, now i want to design the first 0.13um chip for me. i want to know what are different. thanks.
If two identical digital core circuits, which are, implemented in 0.18um and 0.13um, respectively. What's the power consumption relation between the two implementations? Any rule of thumb or simple calculation? Thanks,
I am desigining some circuit which is highly dependent on the parasitic capacitance, esp. the matching of the capacitance at different location. I am wondering how reliable is the parasitic extracted cap of the cadence. Is there any special layout technique to improve the reliability? Since I am using 0.13um technology, I need to add some fi