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1000 Threads found on 180nm Process
Hello everybody! I'm trying to simulate fuse for 180nm process using CFD software. Fuse is a piece of Al wire created with top metal and passivation opening above. I apply power dissipation to it and calculate time-temperature chart. The problem is that I can't determine the point when my fuse is blown up. Any solutions on this? Thanks
I'm currently working with tsmc 180nm process. I need to draw capacitor layout. Can anyone tell me how can i find the "capacitance per unit area" value.? for using poly-metal1 capacitor.
(1) Can I use 1.2 V as Vdd power supply in 180nm process or I can use only 1.8V as Vdd. You can use 1.2 V as Vdd power supply. (2) Is it true that 1.8 V is maximum available power supply in 180nm process and I can use a power supply less than 1.8V. Depends on availabl
Hello friends on physical lavel any one can tell me the exact diff. between these two process.
hi all, what is the maximum width that we can use in tsmc 180nm process.. as per the design equation(thomas lee's book) i got some 437um as width, but ads is giving an error that maximum width is 100um even after using fingers it comes around 320um.. how to get around this prob or am i missing something here? please help me out.
sir, i have trying to find the delay of a circuit using the formula from ivan sutherland d=(gh+p)T. the reason is ,i am designing a surfing circuit for high speed interconnects. i want to verify mathematically that my circuit works at this speed. so, to implement the formula i need the values of T and p which vary with different technologies.
Hi all, this is my first time to post a thread here. Got a lot of help from this forum before though! I am about to design a chip with TSMC 180nm process. We have an old 180nm PDK released in 2004 which runs on IC5. A couple of days ago we got the new 180nm PDK supporting IC6, but some of my work has been done using the old (...)
Hi all, I am designing for the TSMC 180nm. What is the maximum VDD I can use? If I make my transistor width to 250nm, can I increase my VDD? or would I have to use the TSMC 250nm process for that? Generally, if I use TSMC 180nm, but I create some of my transistors as L=250nm, then I can basically treat it as TSMC 250nm.. correct? (...)
From 180nm to 32nm, although space is smaller, k is lower and metal thickness is thinner too. So, the capacitance would be not larger. Ex., M1 thickness 5300(180nm) vs 900(28nm); k value 3.7(180nm) vs 2.63(28nm)
generic 180nm process of TSMC is double well process that's mean there is no vertical pnp., L-pnp is the parasitic pnp at all. so the beta is not larger than vpnp. also l-pnp the collection is p-substrate. Base is nwell. no npn provide at all. because there is no isolated pwell unless use tri-well process. BTW i don't (...)
Can someone please tell me the constraints in this cmfb design to have the settling error of the common mode voltage to be less than 1% ? i have kept the cap sizes in the cmfb to be 4 times the size of the cmfb transistor, but still it doesnt remain constant during amplification phase. [/Q
Hi, Can anyone advise me on any available good 2.4GHz RF IP's out there.. i'm looking for an IP in the 180nm process that i can integrate on my ASIC.. Thanks in advance
i want to simulate a circuit in hspice with TSMC 180nm process. in this ciruit there is a vertical substrate PNP transistor. how i can present this transistor in netlist of hspice? tnx
Thanks every 1, Here is the root, I tried 2 design a simple CS amp with 100nA current using 180nm process and land up in W
That was the price for the 35V LDPMOS. And still with Lmin=2.6?m in a 180nm process!
Dear All, I m using TSMC 180nm process. I'm using nmoscap pcell in layout view, when i place two same instances of same size capacitor, i m getting an error " Label short" and saying that PCELL instantiation cell "pmoscap" (unique cell name "pmoscap_PC2") from library "tsmc18rf" has the following property. L=10.84u W=10.84u. There is no error i
Hi values of W and L depends on your design and what you want to design,for example if you want to design a logic gate you must consider rise time and fall time of gate and also load capacitance and from formulas choose a initial value and then simulate and change this value to reach to the best value, about L we usually choose it as small as pos
Depends on your accuracy requirement. Here's my suggestion: I'd start with L ≈ 5Lmin , e.g. L=1?m for a 180nm process. Then - if you have no area restriction - use X = n?(n+1)? = (n(n+1))? , e.g. X=36 for n=2. Then you get M1, M2: W/L = 9/1 M3, M4: W/L = 36/1 M5: W/L = 4/1 If you have to save real estate, use
could u please tell me typical values of standard deviation of vth and tox for both process and mismatch. I am using 90nm node. These values are absolutely process- and fab-dependent, even the typical ones, and available only with an NDA. Ask your foundry! For a foundry-independent example (180nm process) s. t
Who is correct? Both probably. In the 180nm process I'm working in now the Vt increases for shorter channels. I seem to remember a process where Vt went down as channels got shorter but can't say for sure... it seemed like it went down for one MOS type and up for the other. DIBL is a lowering of Vt with an incr
If you have circuit for 180nm then why don't you use directly for 135nm. I guess it should not affect much other than increased size and power dissipation.
Hi, I am working on a low power design. I am looking for a pmos transistor with 0.5V Vdd and Vth. I'll be giving the i/p to the body of the pmos such that the Vth of the transistor will reduce. Can someone suggest where i can find a suitable tech file to use for simulation in cadence? Thanks
Hi, I'm using a differential amplifier as a comparator to compare a ramp with an input voltage (ramp ADC principle). The comparator is just an amplifier with enough gain to amplify to Vdd/Gnd. I want to do Monte Carlo analysis to see how the gain changes caused by the mismatch. This is where I run in to a problem: the gain collapses in most of t
hi, I am in the process of designing a DPLL through cadence(180nm process) . I completed a 200mHz center frequency VCO for a PLL using a current starved oscillator. Now i am trying to design a DPLL based on a 2.4GHZ balanced NMOS VCO. So far i wasnt able to generate any oscillation and i am starting to think that i am missing something (...)
Wint is >0.2um, which is very significant for a W=1.5um FET. Right, this is too wide for dW, I think you shouldn't take this for dW. I found wint=lint=4e-08 in our 180nm process files, which sounds more reasonable for me.
Here is an pipeline accumulator RTL and Testbench in attechments. It works at 1 GHz at 180nm process, so it should probably works at 2 GHz on smaller geometries. Parameter WIDTH should be set to 32 in your case. If counter always incremented by 1, input port 'din' can be tied to this value, reducing unnnecessary logic and die area.
1a) ... LDMOS. Is it just like a standard MOS but with higher breackdown voltages? Yes, but (usually) also with longer Lmin, thicker gate oxide, larger Vth and smaller gm . 1b) In fact I've never seen its schematic symbol. Is it just like a 4 pin MOSFET (source, drain, gate and backgate
Hi everybody, I would like to design a differential to single-ended converter for low jitter (around 100fs @100MHz in a commercial 180nm process). I have checked this topology: 96734 Which topology do you consider to be more suitable to achieve this requeriment reducing power consumption? Thanks a lot! Pete.
10fF unit cap in a 180nm process tech. actually is a very low value: all I know (and realized) in this tech. had unit caps between 50 and 150fF. With 10fF unit cap - even with a low input cap comparator - you'll always have problems with the parasitics, fighting against required accuracy resp. resolution - at least for a resolution (1 ou
When I apply a CM voltage of 900 mV, my output transistor (NMOS load - MN4) still remains in triode region What are the threshold voltages of your process? Is it a 180nm process? For our (low Vth, fast) 180nm process your design shows quite reasonable operating
The technology current (t.c.) depends slightly on temperature, s. e.g. this curve from D. Binkley's book, p. 59: 103839 This t.c. is given for a similar 180nm process (fab not named). At room temperature the t.c.≈0.6?A for NMOS transistors, for PMOS it is a factor of 3..4 less. t.c. = (Id / (W/L)) / IC , w
Hi, As I have already mentioned that I have designed 4-stage NGCC opamp in TSMC 180nm process using Cadence and I got all my specification except CMRR. When I have simulated my opamp I have found that CMRR curve increasing with frequency but it should be decrease as frequency increases. I am confused what is exact problem ? I have attached my CM
Yathin, the techRuleSets and pvtech.lib files can be created by you..Generally it won't be supplied form the foundry. however you can find the pvlLVS.rul and pvlDRC.rul files in your Cadence Database. For 180nm process, the DRC and LVS rule files will usually be placed in the Assura Directory. So browse through your Cadence Database for "Assura" di
Below pls. find an anonymized Diva/Assura ERC rule file for a 180nm 6LM process:
hi all, i urgently need 180nm TSMC CMOS Spice AMS parameters for all process corners (TT,SS,SF,FS,FF), thanx in advance............... ravi
hi,friends at prsent, we have a ASIC project using SMIC 130nm process, the ciucuit have many RAM (NO.200 capacity.4K), someone can give some advice in FE and BE design considerations? thanks! we carry out 130nm ASIC design firstly. Does the 130nm design and 180nm design have great difference in IC design? what is the difference between the
hi,friends at prsent, we have a ASIC project using SMIC 130nm process, the ciucuit have many RAM (NO.200 capacity.4K), someone can give some advice in FE and BE design considerations? thanks! we carry out 130nm ASIC design firstly. Does the 130nm design and 180nm design have great difference in IC design? what is the difference between them
What are the resistor options available in a standard 180nm CMOS technology and how the are modelled? Thanks.
What is the value of Channel Length Modulation Factor (lambda) in 180nm CMOS for nmos and pmos transistors? Thanks. I suppose you are aware that the Channel Length Modulation Factor (lambda or CLM) depends on several parameters, very much on the channel length L itself, as well as on Vds and
What are the values of K = uCox for both nmos and pmos in 180nm ? Thanks. Find U0 and TOX here in the MOSIS WAFER ACCEPTANCE TESTS. u=U0 ; Cox(180nm) = ε0*εr(SiO2)/TOX = (8.854e-12 F/m * 3.9) / 4.1e-09 m = 8.42e
Hi everybody I have 2 questions: 1- How many metal layers is available at 180nm technology of TSMC? 2- Is there any restrictions on the number of metal layers to use? Thanks
What are effective channel length, gate oxide thickness and Vdd fro 180nm technology? Thanks
In 180nm technology Here 180nm denotes min diffusion width or poly width? Please any body help
hi m working out with my cadence tool.... while m analysing, i would like to know the behaviour of lamda with aspect ratio in 180nm technology both for pmos and nmos..... could someone help me???????
Hi everybody, here's my question: in a former (BiCMOS) process I've been designing with, I used to size resistors and (especially) MOS devices also based on matching parameters, namely using a \sigma = \frac{\sigma_A}{Area} type of expression to evaluate the needed area in order to stay under a target spread. I could retrieve t
Hi all... Please suggest me the manuals that help in doing process corner simulations in Cadence Virtuoso Analog Design Environment.I am using GPDK 180nm technology. Is there any manual exist to learn how to perform process corner simulations in cadence.If so please let me know and the model libraries required for that?????
Hi, Can anyone share with me mismatch models for umc 180nm mixed mode, regular vt process. Or, at least if anyone could tell where or how to generate or find (in case it is already included in the umc package), that would be of great help. In this regard, I would like to mention that I am trying to run a Monte Carlo sampling, to make some ana
When we talk about 90nm process, what do we mean by this. Does it mean that minimum channel length (Ldrawn) is 90nm? or Ldrawn is 180nm? In attached image from a journal paper , author is referring to 90nm process, but has mentioned that L=46nm. But previously we knew that according to lambda based rule, minimum channel length must be twice l
Does anyone has experience in RFIC design using CMOS process? Or some exp in A_D_S or S_pectreR_F in RFIC dsign? I am freashmen in this field. Does anyone want talk about this? :smile: ^^.
Hi, guys: I am looking for RF CMOS process foundry libraries for RFIC layout design (test design). Could anybody offer some kind of CMOS RF process libraries, for example TSMC 0.25um or 0.18um libraries? Or does anybody know where I can download some kind of CMOS RF process libraries? Any help will be appreciated. (...)