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81 Threads found on edaboard.com: 180nm Process
Hello everybody! I'm trying to simulate fuse for 180nm process using CFD software. Fuse is a piece of Al wire created with top metal and passivation opening above. I apply power dissipation to it and calculate time-temperature chart. The problem is that I can't determine the point when my fuse is blown up. Any solutions on this? Thanks
I'm currently working with tsmc 180nm process. I need to draw capacitor layout. Can anyone tell me how can i find the "capacitance per unit area" value.? for using poly-metal1 capacitor.
Hello friends on physical lavel any one can tell me the exact diff. between these two process.
hi all, what is the maximum width that we can use in tsmc 180nm process.. as per the design equation(thomas lee's book) i got some 437um as width, but ads is giving an error that maximum width is 100um even after using fingers it comes around 320um.. how to get around this prob or am i missing something here? please help me out.
sir, i have trying to find the delay of a circuit using the formula from ivan sutherland d=(gh+p)T. the reason is ,i am designing a surfing circuit for high speed interconnects. i want to verify mathematically that my circuit works at this speed. so, to implement the formula i need the values of T and p which vary with different technologies.
Hi all, this is my first time to post a thread here. Got a lot of help from this forum before though! I am about to design a chip with TSMC 180nm process. We have an old 180nm PDK released in 2004 which runs on IC5. A couple of days ago we got the new 180nm PDK supporting IC6, but some of my work has been done using the old (...)
Hi all, I am designing for the TSMC 180nm. What is the maximum VDD I can use? If I make my transistor width to 250nm, can I increase my VDD? or would I have to use the TSMC 250nm process for that? Generally, if I use TSMC 180nm, but I create some of my transistors as L=250nm, then I can basically treat it as TSMC 250nm.. correct? (...)
hi all, i urgently need 180nm TSMC CMOS Spice AMS parameters for all process corners (TT,SS,SF,FS,FF), thanx in advance............... ravi
generic 180nm process of TSMC is double well process that's mean there is no vertical pnp., L-pnp is the parasitic pnp at all. so the beta is not larger than vpnp. also l-pnp the collection is p-substrate. Base is nwell. no npn provide at all. because there is no isolated pwell unless use tri-well process. BTW i don't (...)
hi,friends at prsent, we have a ASIC project using SMIC 130nm process, the ciucuit have many RAM (NO.200 capacity.4K), someone can give some advice in FE and BE design considerations? thanks! we carry out 130nm ASIC design firstly. Does the 130nm design and 180nm design have great difference in IC design? what is the difference between the
hi,friends at prsent, we have a ASIC project using SMIC 130nm process, the ciucuit have many RAM (NO.200 capacity.4K), someone can give some advice in FE and BE design considerations? thanks! we carry out 130nm ASIC design firstly. Does the 130nm design and 180nm design have great difference in IC design? what is the difference between them
Is there any problem to change the channel length value from 180n for the design. What are the problems by changing that? shaan:D
Can someone please tell me the constraints in this cmfb design to have the settling error of the common mode voltage to be less than 1% ? i have kept the cap sizes in the cmfb to be 4 times the size of the cmfb transistor, but still it doesnt remain constant during amplification phase. [/Q
Hi, Can anyone advise me on any available good 2.4GHz RF IP's out there.. i'm looking for an IP in the 180nm process that i can integrate on my ASIC.. Thanks in advance
What are the resistor options available in a standard 180nm CMOS technology and how the are modelled? Thanks.
i want to simulate a circuit in hspice with TSMC 180nm process. in this ciruit there is a vertical substrate PNP transistor. how i can present this transistor in netlist of hspice? tnx
What is the value of Channel Length Modulation Factor (lambda) in 180nm CMOS for nmos and pmos transistors? Thanks. I suppose you are aware that the Channel Length Modulation Factor (lambda or CLM) depends on several parameters, very much on the channel length L itself, as well as on Vds and
What are the values of K = uCox for both nmos and pmos in 180nm ? Thanks. Find U0 and TOX here in the MOSIS WAFER ACCEPTANCE TESTS. u=U0 ; Cox(180nm) = ε0*εr(SiO2)/TOX = (8.854e-12 F/m * 3.9) / 4.1e-09 m = 8.42e
Hi everybody I have 2 questions: 1- How many metal layers is available at 180nm technology of TSMC? 2- Is there any restrictions on the number of metal layers to use? Thanks
Hi guys. I'm designing a Class D amplifier. I have almost no Layout experience and I would like some experienced Layout designers to clear a few doubts. 1) I need to use about 8 resistors with 1MΩ each. Won't these resistors occupy a very large area? How high will be the stray capacitance for each resistor? 2)I need to use four 4pF cap
Below pls. find an anonymized Diva/Assura ERC rule file for a 180nm 6LM process:
Thanks every 1, Here is the root, I tried 2 design a simple CS amp with 100nA current using 180nm process and land up in W
That was the price for the 35V LDPMOS. And still with Lmin=2.6?m in a 180nm process!
Dear All, I m using TSMC 180nm process. I'm using nmoscap pcell in layout view, when i place two same instances of same size capacitor, i m getting an error " Label short" and saying that PCELL instantiation cell "pmoscap" (unique cell name "pmoscap_PC2") from library "tsmc18rf" has the following property. L=10.84u W=10.84u. There is no error i
What are effective channel length, gate oxide thickness and Vdd fro 180nm technology? Thanks
Hi values of W and L depends on your design and what you want to design,for example if you want to design a logic gate you must consider rise time and fall time of gate and also load capacitance and from formulas choose a initial value and then simulate and change this value to reach to the best value, about L we usually choose it as small as pos
Technology node (180nm, 130nm, 90nm, 65nm, 45nm, 32nm, 22nm, etc.) is defined as the lowest metal (metal 1) half-pitch (i.e. metal width or metal spacing) for the DRAM version of the process. Gate length or channel length is usually much smaller than the process node dimension (for example, in 90nm technology, the gate length is about 70nm).
Depends on your accuracy requirement. Here's my suggestion: I'd start with L ≈ 5Lmin , e.g. L=1?m for a 180nm process. Then - if you have no area restriction - use X = n?(n+1)? = (n(n+1))? , e.g. X=36 for n=2. Then you get M1, M2: W/L = 9/1 M3, M4: W/L = 36/1 M5: W/L = 4/1 If you have to save real estate, use
hi m working out with my cadence tool.... while m analysing, i would like to know the behaviour of lamda with aspect ratio in 180nm technology both for pmos and nmos..... could someone help me???????
could u please tell me typical values of standard deviation of vth and tox for both process and mismatch. I am using 90nm node. These values are absolutely process- and fab-dependent, even the typical ones, and available only with an NDA. Ask your foundry! For a foundry-independent example (180nm process) s. t
Who is correct? Both probably. In the 180nm process I'm working in now the Vt increases for shorter channels. I seem to remember a process where Vt went down as channels got shorter but can't say for sure... it seemed like it went down for one MOS type and up for the other. DIBL is a lowering of Vt with an incr
Gate N+ to Nwell cap seems OK to me. But I can't find it in my cadence umc 180nm, 90nm and TSMC 90nm library. Does it require fully custom design? Or I can find it in other libraries? If your PDK doesn't contain such a cap, you could easily create it by full custom design, s. the cross section figure below i
Agree with jimito13 : MM are the std. MixedMode transistors, well characterized for LF analog applications, whereas the RF transistors are specially characterized for RF frequency applications, s. e.g. this header of a 180nm RF SPICE model file: 66816
If you have circuit for 180nm then why don't you use directly for 135nm. I guess it should not affect much other than increased size and power dissipation.
Hi everybody, here's my question: in a former (BiCMOS) process I've been designing with, I used to size resistors and (especially) MOS devices also based on matching parameters, namely using a \sigma = \frac{\sigma_A}{Area} type of expression to evaluate the needed area in order to stay under a target spread. I could retrieve t
Hi, I am working on a low power design. I am looking for a pmos transistor with 0.5V Vdd and Vth. I'll be giving the i/p to the body of the pmos such that the Vth of the transistor will reduce. Can someone suggest where i can find a suitable tech file to use for simulation in cadence? Thanks
Hi, I'm using a differential amplifier as a comparator to compare a ramp with an input voltage (ramp ADC principle). The comparator is just an amplifier with enough gain to amplify to Vdd/Gnd. I want to do Monte Carlo analysis to see how the gain changes caused by the mismatch. This is where I run in to a problem: the gain collapses in most of t
Hi all... Please suggest me the manuals that help in doing process corner simulations in Cadence Virtuoso Analog Design Environment.I am using GPDK 180nm technology. Is there any manual exist to learn how to perform process corner simulations in cadence.If so please let me know and the model libraries required for that?????
hi, I am in the process of designing a DPLL through cadence(180nm process) . I completed a 200mHz center frequency VCO for a PLL using a current starved oscillator. Now i am trying to design a DPLL based on a 2.4GHZ balanced NMOS VCO. So far i wasnt able to generate any oscillation and i am starting to think that i am missing something (...)
Wint is >0.2um, which is very significant for a W=1.5um FET. Right, this is too wide for dW, I think you shouldn't take this for dW. I found wint=lint=4e-08 in our 180nm process files, which sounds more reasonable for me.
Here is an pipeline accumulator RTL and Testbench in attechments. It works at 1 GHz at 180nm process, so it should probably works at 2 GHz on smaller geometries. Parameter WIDTH should be set to 32 in your case. If counter always incremented by 1, input port 'din' can be tied to this value, reducing unnnecessary logic and die area.
Hi, I need the capacitance (MOS capacitance , the node connect to bit line ) value of 6T SRAM cell to calculate power. The process 180/40/28nm of any FEB is fine. Please help me. Thanks a lot. John
Who can upload a new gpdk (Cadence general purpose design kit) for 180nm or 90nm? Better would be CDK (Cadence Complete Design Kit)? :D They should be free according to Cadence but I can't download them. BTW, the newest TSMC design uses more than 100Mbytes!
That is true. For power planning, you must know your process spec. The max current per 1um. Always for TSMC 180nm is 1mA. But you need to leave margin. You can estimate power in netlist level simulation. Then , calculate the average and peak power. For power connecting, different people have different style. Some one prefer large width of power
Hi.. how we can calculte the Cox of CMOS using the parameters of Pspice CMOS model TSMC 180nm . thanx
now if i start working on 90nm tech am i sippose to get the pcells of this tech???? as of now i am working on 180 nm tech but the pcells r not of 180nm tech thats y.... also one might be able to draw pcells of any tech he/she wants.. pls comment on this... thanks, Prasad
i am using the cadence generic process design kit, and i think it's adequate for layout and simulations. they have the 90nm PDK as well as the 180nm one. As for TSMC, i am not too sure how you can request them.
Why all technologies are not trade off? Why only 130nm,45nm,90nm,65nm,350nm,180nm.............why not 120nm,123nm,105nm ??
Does anyone have Calibre DRC rules for Silterra 180nm..?
If you want to use a mosfet as a current mirror then long channel will be better than a short channel device due to channel length modulation effect. also using cascode current mirror is an option to increase output resistance. But you cut from the headroom by using cascodes. As sridhar540 mentioned there are also secondary effects which affec