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25 Threads found on Active Node
Whenever a node face an error it sends an ERROR frame and according to the TEC and REC value of the node it sends the active or passive error or busoff. My question is suppose a node (Tx) finds a error as BIT error in the DATA field, then the error frame will generate immediately or it will continue to transmit the frame (...)
And the voltage I am seeing 760V is (Com referenced to ground) Makes no sense for the post #1 schematic which has the switching node shorted to COM. Sure the schematic have is based on this It shows just a basic flyback converter. So we are still left in the dark about the actual "active clamping circuit". A
I don't think it's a tri-state output with mosfets turned off, but just an example. The (a) part of the figure, at left, suggest that both MOSFETs are in active region, acting as constant current sources. Resistance at the node is very high (ideally infinite) as for any constant current source. (But if the two currents are not exactly the same, on
High impedance doesn't mean the drain can't carry significant current, it means that, in the saturation (active) region the current does not vary much with a change in drain voltage. In that region the current is largely determined by the gate-source voltage. In other words the drain tends to look like a current source (sink).
hi, active region means your n diffusion or p diffusion. check for that
Because your sensing-node impedance is low when the photoconductive / photovoltaic event is active, and high once the carriers have been swept out. So you have two different time constants at play. This will be magnified by any loading that attends the probe or front end elecronics. For purposes of illustration, consider a photodiode which sources
Hi, would someone help me in understanding the inverting and non-inverting nodes of the following schematic? The input differential stage has an active current mirror, node 2 and 3 are the input nodes. node 2 has an DC+AC signal and node 3 is a pure DC signal as Vbias. I am trying to find (...)
I presume you are talking about "active clamping", e.g. made with a high voltage z-diode feed back to an internal gate driver node before the output buffer. It's purpose is clamping of Vce overvoltage and avoid IGBT damage, e.g. when switching off an inductive load. It should be never required in a correctly layouted half bridge where overvolta
Hi This is kind of a though job to list all types of DRC errors that could occur. Depending on the technology node you are using, and the models provided by the foundry, you can get additional errors. Typical ones are: - Layer min widths (Metal, poly, active areas, np, pp,...) - Layer spacings - Layer overlaping to another layer - metal densities
Maximum gate length may be set by groundrules such as max length of poly over active (I see 20um in a PDK I'm presently using, which is not your foundry's but is 180nm node). There would be no good reason to use such a length for a mixer. Only for poor-boy high value resistor / low value current source type uses.
Hey everyone, I am trying to calculate the power consumed by the embedded SRAM in wireless sensor network node (wsn) during its active period (during reading and writing). I used the following formula: Ptotal = (Pread*Naccess) + (Pwrite*Naccess). The number of times we read and write to the eSRAM are different. Do we read more than we write in a
By design of the circuit, the output impedance of common drain stage M1 loads the active inductor node, so it can hardly achieve high real impedance values.
I'm not familiar with that simulator but, if it's a Spice type simulator, the noise values for active devices are included in their models and should appear when you perform a noise analysis of the circuit. The output noise will then appear as a spectrum as determined by the bandwidth of the circuit.
I assume that the circuit on the right side is intended to work as a kind of active current mirror. To understand the non-ideal behaviour, you would want to look at individual branch currents and node voltages. You didn't mention what causes the rather high leakage currents in your MOSFETs. Thus I can't determine, if a compensation should work.
Hi I have a common source amp by active load pmos . I analyse that by hspice. my hand calcoulation for zero and pole is :p1=107meg p2=9.44gig and zero= 588gig but .pz analyse give me 5 pole and 4 zero that are not match by my hand calculation? circuit have 2 node then soulde have just 2 pole but.....:( common source .option post
Our delay-sensitive routing has two phases: locating the data collector and forwarding data to an active relaying node. To facilitate locating the data collector, announcements about the current location of the data collector are disseminated periodically to a subset of sensor nodes in the network. When a sensor node (...)
Hi ivanljh, at first, the Sallen-Key circuits as proposed by IanP suits not your requirements as they are of second order. I understand that you are looking fora lowpass-highpass combination. 1.) First solution: As proposed by FvM, with a noninverting buffer/amplifier between both passive RC-combinations. But you should know that the R,C val
define_dft test_mode -name test_mode -active high TM insert_dft test_point -location -type control_node -node scanenable -test_control test_mode
i see, but the active current mirror performs no inversion, If Im3 increase δI,Im4 will also increase δI, how can it comply with KCL law? Added after 9 minutes: As it is said in this paragraph, Im4 increase and Im2 decrease, how to explain this against KCl?
'A' needs to be closer to the output. If B becomes active first, then the node between A and B can be discharged to '0' so that when 'A' becomes active, the path from 'output' to reference(gnd) is only through the 1 nmos transistor. This sounds like a homework question?
Hello, Gate-to-substrate capacitance exists, it's the capacitance of the gate poly outside channel to substrate. the gate poly extensions outside the active region will have capacitance, As asic_ant said, you may think of MOS as four plate capacitor, all sharing charges between each other, so any change of any node voltage will affect the re
Hi,020170 Although I can't answer your question,I haved found out one of your mistake.The diffusion contact must in the active area,right?It dosn't make sense in my eyes. Regards flyankh Added after 26 minutes: Now I think I found the point: Did your Nwell connected to VDD too?I guess you haven't
I have a circuit diagram that is an active Op-amp low pass filter , but i don't know how to do the simulation of its frequency response using Pspice. Can someone teach me??? Thanks Use an sin input signal and ac amplitude) and measure ouputsignal => bode plot
You appear to be using this crystal in an IC that has an internal oscillator active circuit. 1. You can put your probe on the point where the active circuit has a low impedance point like the output of a gate or transistor. 2. You can make a similar oscillator circuit on a breadboard and measure the output of the oscillator. 3. You ca
the gm/C is adevice figure of merit from the days of valves/tubes. It is also called the 'gain bandwidth product'. It is only useful on devices with very little resistance from the controlling node (gate, base, grid) to the active part of the device. This is why it is not used for bipolar junction transistors.