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99 Threads found on edaboard.com: Avalanche
SCR might stay latched on, probably a bad choice. An "avalanche rated" MOSFET might solve the problem cleanly, depending on the stored energy. Should be app notes / selection info for any such parts. A "catch diode" that returns overshoot energy to the supply could also do the job, less dissipatively than the TVS (TVS will have a Joule energy pe
i try to simulate an avalanche photo diode by silvaco atlas. how can see the dark current and illuminate current? if i need to use another solving method help me please. region num=5 material= InP y.min=2.3 region num=6 material=air y.min=-0.3 y.max=-0.1 electrode name=anode material= aluminum x.min=16 x.max=19 y.min=-0.3 y.max=0.1 elec
To understand about saturation effects, we should know the core type and flux in regular operation. A push-pull transformer without any clamping or snubber might drive the MOSFET into avalanche breakdown in regular operation. Inrush current during output capacitor charging will cause respectively higher avalanche energy which might be sufficient
Xenon flash tube are high pressure discharge lamps resulting in very short ion free path, and the electrode shape doesn't promote avalanche multiplication as in a Geiger-Mueller tube. Only if a single particle could generate a complete ionized path along the tube, it might trigger a discharge at voltages considerably below the self-trigger thres
I don't know how you would use this in a bandgap circuit, but a zener diode combines two effects: zener effect and avalanche effect. One has a positive temp coefficient, the other a negative temp coefficient. So according to Wikipedia: In a 5.6 V diode, the two effects occur together, and their temperature coefficients nearly cancel each ot
You show a Jfet, not a Mosfet. A Mosfet has a powerful avalanche diode built into it then your diode that blows up is not needed.
The speed and voltage range can be achieved by cascaded MOSFET and particularly BJT avalanche switches. The latter can only switch fast on, so they are usually implemented as transmission line pulsers. Simultaneous triggering of the cascaded switches with < ns skew is challenging.
The emitter-base junction of a transistor has a reverse-biased avalanche breakdown at 5V to 7V and is not robust to handle the breakdown current so the transistor will be damaged. Then maybe the base-emitter should be shorted to make a diode.
Hi all, I'm now make a board to produce a sub-nanosecond pulse using avalanche transistor. And I made it successfully.The second Fig is the waveform I tested using a 4GHZ bandwidth oscilloscope. 128925128926 But when I want to produce a more narrow pulse, I don't know which parameter should be adj
What is the input dynamic range of a typical charge sensitive amplifier (CSA) ? It is possible to detect 1.5 Million photo electron by a CSA ? If yes then what is the output signal strength of such CSA. These photo electrons are produced by some number of multi-pixel avalanche photo diode array which has around 1.5 Million pixels all together.
I have never seen TVS diodes for overvoltage suppression in fast MOSFET circuits, they are slow and adding unwanted capacitance. Short, low energy spikes can be absorbed by the MOSFET avalanche capability. It's not unusual that the internal Vds of fast switching MOSFETs has an overvoltage by working of package inductance, driving the MOSFET into av
Hi all, I am looking to improve my circuit design, PCB prototyping and fabbing skills and I am looking for a project to take up some of my time this winter. I am looking to build my own avalanche transceiver from the ground up, and I was hoping that I could come here for some direction. I am looking to replicate something similar to the Back
Very bad circuit with unclamped inductive load, driving the FET into avalanche breakdown.
Since it requires power and has negative resistance like SCR's , Tunnel Diodes and Unijunctions, it is active. It is a regnerative avalanche process.
Never came across a BJT with BVCEO of 1.5V. What kind of devices are you asking about? Generally, BJT don't tolerate avalanche breakdown. Pemanent damage can be expected.
Arcs are very low negative resistance avalanche effect which often switch in sub ns time. But in this case there are large physical properties and require special transformers. I see one paper... presents a time domain model called exponential-hyperbolic for electric arc furnace using MATLAB but haven't read it
general it is either back to back zener or single zener like avalanche diode. But some also prefer Triac like performance e.g. TRANSIL / TRISIL COMPARISONElectrical characteristicsThe Transil is a clamping device which suppresses all overvoltages abo
Try again >18kV min for trigger >0.62us .. choose a few us with Cap 540V~1889V for reliable trigger With only 300Vdc on cap, trigger must be increased. Duration of lamp depends on size of capacitor & voltage , as lamp is a negative resistance avalanche with an positive power series ESR where Impedance parameter. (Ko) 11.9 Ohm Amp ^0.5 ESR of
Hi, i m simulating a 0.18 standard NMOSFET's breakdown characteristic on sentaurus now. The accuracy of those available physics model puzzles me a little bit cause by choosing different models the breakdown voltage could vary from 3 V to 8 V.(by band2band or avalanche ) Can anyone tell me how to choose the physics model correctly? Thanks.
I am working in a avalanche Breakdown property of device and tring to simulate this property for getting Diferrent curve(IdVds and Idvgs curve.) for my MOS device with sentaurus TCAD tool. But can not get the desired results.
An avalanche diode is not the forerunner of the Gunn diode, they work on completely different principles. Their use to generate fast pulses is similar to the Trappat effect, their 'breakdown' is very fast and in controlled conditions the speed can be used to advantage. By themselves, they do not produce any additional power and would be useless in
Your schematic shows no supply voltage. If it is too high then the transistors have avalanche breakdown and oscillate. Your schematic also shows no supply bypass capacitor. Maybe the supply voltage is jumping up and down caused by the current. The circuit will oscillate if one transistor is upside down then it becomes a zener diode.
What slew rate do you expect? for rising and falling edges? avalanche effect devices are usually needed.
Positive feedback used for hysteresis. this is the % of output swing and ratio of feedback resistors to the midpoint of swing. This is how Schmitt trigger inputs are made, ranging from 1% for small and 30% for common CMOS gates. avalanche switching diodes are even faster. But normally you only use hysteresis to prevent glitches from input noise
Maybe because this is oxide rupture, not silicon "breakdown" (which has better-understood impact ionization / avalanche mechanisms in a material whose composition is pretty well known - gate oxide, there are many nuances as far as the defectivity, growth-mechanics-driven density / uniformity of bonds & vacancies, even gross composition).
Hi everyone, How can I reach the breakdown voltage without applying the voltage written in the datasheet (80 volts!) , can I build a simple amplifier circuit with a battery of 5 V? I wonder because every regular range meter with APD has a battery of 3 volts, so how do they reaching the brakdown voltage?? thank you!
Modern power MOSFETs can be expected to handle repetitive avalanche. Review e.g. Vishay Application Note AN-1005, Power MOSFET avalanche Design Guidelines.
According to the VNL5030 datasheet, repetitive avalanche operation seems to be supported. This operation mode implies that the stored solenoid energy is completely "burned" in the driver (or a part of it, if the driver is turned on before the current decays to zero). So you have to take care that the driver doesn't overheat in this situation. Ge
The "freewheeling" mode works for below-ground undershoots but has nothing but avalanche breakdown, for positive ones (like you'll get when you turn off the current path through the solenoid). Some FETs are "avalanche rated" and some are not. I do not know how much avalanching even the "rated" ones can take, reliably. The drain-body diode will t
The emitter-base has avalanche breakdown (like a zener diode) with a reverse voltage of only 5V for most silicon transistors. This overheats the tiny junction and slowly damages it.
Unlike IGBTs and BJTs, recent power MOSFET have avalanche capability and can absorb overvoltages with limited energy safely. Nobody would use IGBTs for a 24V switcher due to inacceptable high saturation voltage. The circuit in post #2 is fine, except for missing power supply bypass capacitors. Low inductance film capacitors should be placed nea
Hi all I have a question about avalanche breakdown at MOSFET . I know that avalanche breakdown occurs when voltage exceed bvdss at OFF state. Then is it possible that avalanche breakdown occurs when mosfet's ON state???? (if sudden voltage spikes occured at drain or source) Thanks in advance.
I wonder which IGBT have a avalanche specification. Can you give an example? avalanche energy specifications are however common for power MOSFET. 2. The avalanche capability information given on device datasheet is based on the maximum junction temperature not exceeding 150 deg C. However, when a device is fail due to overvoltage, the
The essential point is "spike" energy. If it's suffciently below avalanche handling capability of the device, there should be no problem. in other words, you are asking about leakage inductances and currents that energize it. Some switcher designs can't avoid to drive MOSFETs repeatedly into avalanche clamping, with respective low energy.
Subject to detail analysis, most PSU (including PFC types) have larger input capacitors, so they absorb the surge pulses more easily. Switchers with discrete MOSFET can be also expected to have higher Vds breakdown voltages and avalanche capability to absorb pulses of low and medium energy.
So, the application notes in this post are of no use: or this application note on using avalanche transistors to drive laser diodes: Keith
Hi all, i am trying to simulate a LDMOS device which includes self heating and impact ionization effect. The code is same as given in the example section of sentaurus. when only thermodynamic model or only avalanche model is included, it works fine with step size of 1e-6. But when both of them are activated, it's showing convergence problems(even
avalanche operation with zero bias is like mountaineering on the sea. Good luck! :smile: Besides specified bias, a suitable load, e.g. 50 ohm resistor (passive) or TIA (active), is required.
Hi all, I'm implementing a SPAD model(base on: SPICE modeling of single photon avalanche diodes. by F. Zappa∗, A. Tosi, A. Dalla Mora, S. Tisa and published in Sensors and Actuators A 153 (2009) on pages 197?204) and the problem is in a swith out of the analogLib of Cadence (in combination with Spectre) that should simulate the selfsustain
The Applicati on Note AN 2012-03 "Datasheet Explanation" says referring to the avalanche characteristic curve (Figure 13 in the present datasheet): Operating MOSFET under the conditions below the curve is allowed with consideration of the maximum junction temperature. In so far the operation is permitted, and there are in fact m
From both, because will be an avalanche failure. Initially will be a breakdown followed by temperature degradation. Is a common failure for FETs used in switching power supplies.
An avalanche transistor cable pulser can be a simple solution for moderate reoition rates.
Zener diodes make use of the avalanche breakdown to work. In zeners of more than 6v avalanche domminates over zener effect. The sharp I/V curve makes necessary to limit the current, otherwise the device is destroyed. There are devices called avalanche diodes and avalanche phododiodes that take advantage of this effect.
if the current is limited, it just clamps, if the current is not limited the heat punches a hole in the junction and lets out the magic smoke. The third option is non-destructive avalanche breakdown - if the dissipated energy is limited to a safe level.
avalanche breakdown is primarily dependent on the phenomenon of ? a) Collision b)Doping c)ionization d)Recombination please which one is correct ?
Hi everyone, I'm a bit confused with the different concepts of the "breakdown" of FETs. On Sedra & Smith (for those of you aren't in Canada, this book is pretty much the bible of fundamental IC designs in here), I understood three kinds of breakdowns well: weak-avalanche, punch-through, and gate-drain breakdown. However, I came across this ter
Depending on the amount of stored energy, you can possibly trust in the MOSFET's capability to absorb some energy in controlled avalanche breakdown. You should refer to the datasheet for an exact specification. The usually preferred external flyback diode will cause dissipation of the stored energy in the load resistance but also slow down curr
Do we need snubber ckt across fet with internal protection diode? If you refer to the controlled avalanche breakdown capability of modern FETs, it can be utilized instead of a snubber. But then you get the power dissipation inside the transistor. flyback voltage + line voltage Because the flyback voltage across the
i mean, There must be something wrong in my simulation.I can't get a snapback zone in my result.what should i add to my cmd file except for avalanche model?
Thank you for the advice Keith. We chose to use an avalanche photodiode due to our relatively weak light source. We are using a 5 mW 650 nm laser. However, if you believe we could get away with using a regular photodiode, that would save us a lot of trouble instead of trying to figure out a way to generate the 150 V necessary. It seems like generat