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45 Threads found on edaboard.com: Biasing Inductor
any buddy have that design or ideas about biasing pls upload it or reply me at pm regards
Dear HFSS, I want to simulate an inductor and expect to get S-parameter of out of it. I want to simulate it with a particular DC biasing, let say 20 mA. Can this be done in HFSS? Which excitation should I use. thanks, wlcsp
Hi I am designing a DC biasing circuit for my microstrip board. I was told that a feedthrough capacitor should be included as part of this bias circuit. Does anyone have information on this? I am using ADS to simulate my circuit. Is feedthrough capacitor available in the software? Thank you very much for any help rendered. Kevin
Hii guys, Can u all tell me how to deside the value of RFC chock/inductor( depending on freq. band and current) that we r using for biasing for any PA,LNA. i am confuse. thanks
For DC biasing for power amplifiers or diode switches, inductors are often used as RF choke. How do we decide the value of inductor to use for the RF choke?
Using PIN diodes is new to me. I've read a lot of the app notes from various vendors like MA/COM, AVAGO, MICROSEMI. My problem is I don't understand how to bias the pin diodes. All of the app notes shows the rf path with the pin diode "isolated" with dc blocking caps. Voltage goes through an inductor, the pin diode, and then another inductor.
Due to gain-bandwidth product limitation for any amplifier it is usually easier to reduce gain in lower frequencies than increase it on high frequency end in order to get flat response. Different measures can be used: smaller series capacitor(s) at input and output circuits, adjusting biasing inductor(s), designing high-pass matching circuit etc. D
Give more informations about the used Mosfet, Drain current? package type? datasheet?Is there any spice model of this mosfet? To get some informations. There is no simple biasing network unfortunately. But you can start with : 1nH inductor 10nF & 10uF shunt bypass capacitors. 7pF coupling capacitors. Should be ok at 1 GHz.
As far as i have tried, the funtions work well. I suggest you to check your DC biasing networks! Regards.
Hi all, Can a Ferrite bead be used as RF Choke instead of inductor being used as RF Choke in LNA biasing circuit. attached is the application circuit Regards Vinod
It's just for biasing purpose which is very necessary when the supply voltage of vdd and ground. In this manner the dc voltage of all ports of opamp is vcm.
The Rbias is used in order not to make the signal quantity flow through the biasing network so that the full signal gets appeared at the gate/base of the transistor.Usually the value of Rbias is high so that it provides a high impedance path to signals. Hope it helps Santom
Thanks guys for helping. I have seen that option , but if I change the layout , that is by dragging , will MWO simulate the schematic (keeping in mind the layout) because if I introduce a bend say for instance, inductance is introduced. Secondly, my circuit has a dc bias, I am biasing a diode via choke (which will be transmission line based) and
I am working on a PA design that is supposed to work upto 3 GHz. It seems that some of the designs I have come across in my study use an Murata High frequency wirewound inductor in series with an RF bead for the bias. I understand that the purpose of an RF choke is to present a large impedance and choke out the resonance, while letting the dc go.
I am working on a reconfigurable decoupling and matching network. To make it reconfigurable i need to use varactor diodes ,which will help me tune uptmy network from uplink to downlink frequencies. I need to know how can i model and achieve biasing of these varactor diodes. Using skyworks 2019-2023 hyper abrupt varactor diodes.
Check Maxim also. the only thing you have to do is matching impedances at input and output, and insert an inductor to biasing the Chip. But be careful, normally high frecuency amlpifiers are made for a single frecuency, or a limited range of frecuencies, because they are frecuency compensated to avoid unstabilities
Since I have a varactor with two terminals ,Gate and "Source+Drain",how to get varactor C-V curve in CDS?pls be more specific Hook up (wire) the varactor properly with all needed grounding and biasing sources, to facilitate measuring of its input impedance with a current ix. Give the Vbias voltage source a variable name
I want todesign x band amplifier having gain 12 dB but not finding out the appropriate there any Agilent pHEMT which can be used in order to design the amplifier of required gain and frequency. We have tried many transistor but S21 parameter do not increase above 2 dB at 8 Ghz. Can we place inductor at gate in biasing circuit?it seems
Hi! I am new to this forum. My question is, does anyone have an idea of a good test-bench for simulating the Common-Source Amplifier? I mean, how to bias the active transistor(dc voltage at the gate) such that the output is maintained at a particular value, for instance (vdd+vss)/2. The biasing scheme need not be practical. Its just for the sa
Hi Surianova, Migrating from CMOS to Bipolar is a good choice especially when you are about to design a high frequency circuits. Even in CMOS we can achieve to design for 10Gbps but with the help of On chip inductor where it is not a good choice for designers when it comes to chip size. I think that in order for you to understand about Bipolar d
Hi, I have built my LNA circuit, the transistor I used is 40/0.18um, the biasing current is 0.5mA. And Vgs=535mV, from the simulation result, I found nf(2)=~3.4~3.6dB, while NFmin is about 2~2.5dB. The resonant frequency is 2.5GHz. Can I adjust the circuit to make nf(2) approach NFmin? How to change the circuit, can anyone help me? Another proble
hi all, i have designed a LNA , but IP3 is -15 dBm, but i want to improve it ,,,,but don't really know what is the problem of my circuit? Coould it be matching circuit, could it be biasing consdition ..or something else ? HOw can i improved IP3? any suggestions ....? thanks !!
Hi Guys, I am designing a CMOS LC VCO at 5GHz. The VCO is powered by 1.8V. And I biased the gate voltage of tail current transistor directly using a power supply(say 1.1V). When the chip come back, the measurement shows it can oscillate at right frequency but the phase noise performance is pretty poor. The 1MHz offset has a PN of -70dBc/Hz, whil
I used current mirror biasing the transistor. The mirror is connected to the gate of the transistor through a 50K resistor. I am using cadence not ADS.
Hi, I designed a current mirror transimpedance amplifier by using 0.13?m cmos.Now I got 60db gain & 3.2Ghz bandwidth.But my desire bandwidth is 10Ghz.I used 1amp current source through bondwire inductor, biasing voltage=1.3v Q1=28?m Q2=36?m R1=2K R2=1K Anybody can suggest me, how can I got my desired BW by using these parameters. Pl
hi, I am beginner to LNA design. I am doing 12Ghz LNA design using microstrip .I am using ATF36077 HEMT FET (avago) as the transistor and RO3010 pcb(Er=10.2). I am using ADS2005A for design and simulation. I have attached the schematic of my design and ATF36077 datasheet for your viewing.I used Zin=15.547+j9.6410 and Zload =17.75+j4.99 for my
hi, I am beginner to LNA design. I am doing 12Ghz LNA design using microstrip .I am using ATF36077 HEMT FET (avago) as the transistor and RO3010 pcb(Er=10.2). I am using ADS2005A for design and simulation. I have attached the schematic of my design and ATF36077 datasheet for your viewing.I used Zin=15.547+j9.6410 and Zload =17.75+j4.99 for my
it is inductor degenerated. what should I observe for biasing?
I am trying to use a schottky diode detector for detecting small signal power. Does anyone know how to improve the detection sensitivity? - conjugate matching doesnt give good result and I dont know why and how matching should be done. - Some notes mentioned that biasing could also be used, but I dont really understand how the diode should be
Hello. I have a number of LDMOS rf fets that I wish to validate both the input and output impedance of. My test fixture consists of a block of aluminumn with N connectors on each end "Grounding is very good" and a small pcb to mount the device on. The pcb is nothing more than a input printed line and a output printed line 1 inch long. Bia
Hi all, I think this is a basic one. I'm new to ADS. My circuit consists of a FET device+biasing network+matching network. I'm interested to see the power gain (and other S-parameters) for different values of one of the inductors of the network. The desire output would be a plot with several power gain traces for different inductor (...)
Hi, I'm designing an amplifier at 4.2 GHz using MGA-72543 amplifier chip. I need several capacitors (from 22pF to 1000pF) for biasing circuit. Can you recommend a manufacturer that will work in this band? I attach the datasheet of the chip ( it includes the biasing circuit) if needed. Thank you,
Ive tried this circuit too, it would not work with the values mentioned. I got ~20Khz with 700uH a 0.1uF and a 0.47uF for the biasing resistors I used 10K and the transistor was a 549c frequency was correct as per the is the oscillator in
This might be pretty basic, but are you sure you're doing your AC analysis with the proper DC biasing? Are all your transistors in saturation when doing a DC operating point analysis? Having a valid DC sweep of the input doesn't mean anything if you're not biasing the circuit for operation in the sloped part of the DC sweep.
I would be tempted to try something like this. A DC voltage on the feedpoint will turn on the PIN diodes if positive, and turn off the PIN diodes if negative or zero. By playing with the shapes you can probably get a dual band response as a function of pin diode biasing. I would keep the structure symmetrical! [url=images.elek
Voltage pulse comes up to a juncion. Voltage wave continues on past the junction, while another voltage wave travels up the stup. Some time later that voltage wave on stub hits a short circuit. Transmission line theory says that for 0 V across the short circuit, to cancel the forward traveling voltage wave, a reverse wave of equal amplitude but
I have never done one that low in frequency before. I suspect there are some tricks to getting the limiter diode to respond the same at microwaves as at 10 MHz. At microwave frequencies, the sine wave is changing so fast that the electrons have trouble going from one side of the I region to the other in that half-cycle. At 10 MHz, they have all
Hi all, Really need help from u all. I've searched through the web, there were no topic teaching how to calculate all the component (biasing resistor, colpitt frequency, coupling caps)value for below VCO design. This is the common model VCO pattern however i still cannot get it in detail. Pls share me the detail If you guys hv relavent topic
hi while you are biasing the amplifier you should take care of loading the output to stop gain decreasing.on routine is using inductor but you should consider the please see this web page:Mini-Circuits then go to amplifier then first part:biasing of Constant Current MMIC
Again Hi My mean by flybcak diode was this : Do you know about lenz law ? each inductor , will have opposition , against instantaneous currents . and the inductor don't want allow to change the situation . If your inductor has current , and when you cut the current of that , it will try to keep that current and will create high voltage (...)
hi, I have worst experience with Ldmos SD57060. Many devices has be damaged (gate is damaged and short circuited with source) during design and test procedure. Last time i was using frequency generator with 880MHz @14dBm as an input source and the amplifier's output was connected with spectrum analyzer. My procedure and observations are D
Hi baby_1 My recommendation to you: Before starting to analyze some specific properties of opamp-based circuits you should try to become familiar with the basic principles of opamp operation (for example: proper biasing and negative feedback).
Hello, I am desining a common gate lna. Just a common gate without any buffer. The CG transistor has inductor at source and drain. Also a resitor is present at drain. I am getting s11 less than 10 db from 2.5G-7GHz, S22 about -6db for the same frequency range, b1f<1, kf>1 but s21 is negative. I have checked the biasing and all dc points? can any
Dear pujithakaza, There is no proper methodlogy for Microwave frequeny biasing ckt, you have randomely vary the resistors, will get the desired Vds and Ids. Because scatering parametes we don't have any method such that in the low frequency biasing circuits. Randomely you choose any biasing ckt such that voltage divider (...)
The term "choke" is used for different applications. In the most general sense it refers to an inductor whose purpose is to pass primarily DC current. However, another important distinction is whether the choke is meant to store energy (like those used in SMPS converter stages), or whether it's used for suppressing AC current (common mode filter c