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Biasing Inductor

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14 Threads found on edaboard.com: Biasing Inductor
Having a large inductor in the negative feedback (as you show in your screenshot) is a common way to simulate open-loop gain. The large value inductor in negative feedback ensures correct DC biasing. For AC analysis it is out of the picture. You should make sure that the feedback is connected in a negative feedback scheme.
Hello, I am desining a common gate lna. Just a common gate without any buffer. The CG transistor has inductor at source and drain. Also a resitor is present at drain. I am getting s11 less than 10 db from 2.5G-7GHz, S22 about -6db for the same frequency range, b1f<1, kf>1 but s21 is negative. I have checked the biasing and all dc points? can any
I am working on a PA design that is supposed to work upto 3 GHz. It seems that some of the designs I have come across in my study use an Murata High frequency wirewound inductor in series with an RF bead for the bias. I understand that the purpose of an RF choke is to present a large impedance and choke out the resonance, while letting the dc go.
hi while you are biasing the amplifier you should take care of loading the output to stop gain decreasing.on routine is using inductor but you should consider the please see this web page:Mini-Circuits then go to amplifier then first part:biasing of Constant Current MMIC
The Rbias is used in order not to make the signal quantity flow through the biasing network so that the full signal gets appeared at the gate/base of the transistor.Usually the value of Rbias is high so that it provides a high impedance path to signals. Hope it helps Santom
It's just for biasing purpose which is very necessary when the supply voltage of vdd and ground. In this manner the dc voltage of all ports of opamp is vcm.
Hi all, Can a Ferrite bead be used as RF Choke instead of inductor being used as RF Choke in LNA biasing circuit. attached is the application circuit Regards Vinod
Give more informations about the used Mosfet, Drain current? package type? datasheet?Is there any spice model of this mosfet? To get some informations. There is no simple biasing network unfortunately. But you can start with : 1nH inductor 10nF & 10uF shunt bypass capacitors. 7pF coupling capacitors. Should be ok at 1 GHz.
Hi all, I think this is a basic one. I'm new to ADS. My circuit consists of a FET device+biasing network+matching network. I'm interested to see the power gain (and other S-parameters) for different values of one of the inductors of the network. The desire output would be a plot with several power gain traces for different inductor (...)
Hi, I designed a current mirror transimpedance amplifier by using 0.13?m cmos.Now I got 60db gain & 3.2Ghz bandwidth.But my desire bandwidth is 10Ghz.I used 1amp current source through bondwire inductor, biasing voltage=1.3v Q1=28?m Q2=36?m R1=2K R2=1K Anybody can suggest me, how can I got my desired BW by using these parameters. Pl
Hii guys, Can u all tell me how to deside the value of RFC chock/inductor( depending on freq. band and current) that we r using for biasing for any PA,LNA. i am confuse. thanks
Dear HFSS, I want to simulate an inductor and expect to get S-parameter of out of it. I want to simulate it with a particular DC biasing, let say 20 mA. Can this be done in HFSS? Which excitation should I use. thanks, wlcsp
any buddy have that design or ideas about biasing pls upload it or reply me at pm regards
Check Maxim also. the only thing you have to do is matching impedances at input and output, and insert an inductor to biasing the Chip. But be careful, normally high frecuency amlpifiers are made for a single frecuency, or a limited range of frecuencies, because they are frecuency compensated to avoid unstabilities