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The derived equation for gm is assumed to be in body effect existing condition, then it is not correct when vsb = 0
how to avoid occurance of Miller and body effect in BJT..? SOLUTIONS ARE WELCOMED
as far as i thought ,,body effects makes the threshold voltage of mosfet changes,,,so,,you must care when placing the mosfets in series that they still operate in saturation region and this depend to a great extend on the supply voltage ;as it shrinks down ,placing mosfets in series becomes more difficult (...)
In both body effect and DIBL, the width of deplition region increases, but in body effect the threshold voltage increases while in DIBL Vth decreases, Why???
The body effect describes the changes in the threshold voltage by the change in VSB, the source-bulk voltage of the mosfet. Since VSB influences the channel and hence the Threshold voltage (when it is not tied to the source), it can be thought of as a second gate, and is sometimes referred to as the "back gate"; the body (...)
hi i use 0.18UM180FDKMFC-FDK in my design i have to avoid body effect so i need to connect the bulk terminal of NMOS to its source but the problem is the process is twin well so can i use RF mos in the kit?it has 4 terminals (s,D,G ,B) , when i see RF transistor layout it has a layer called DNW ,does it mean "deep n well"??? an
I found on my notes that for an NMOS with increase in Vsb voltage body effect increases, Vt also increases. But it is mentioned that with Vgs constant id increases which I feel is wrong since id is proportional to (Vgs - Vt)2. Hence I think id should decrease. Please show me the ligh
Hello every one I want to calculate the value of "Gamma" (body effect coefficient) of a MOS transistor using Cadence Virtuoso.I ran the DC analysis and checked the DC operating point parameters but can't find "Gamma".Would any body help please?? Thank you
Yes, but the normal situation in cascoding is to have the body effect. Using the bulk to source connection (no body effect) will increase the parasitic capacitance of the cascode node due to the required well to isolate bulks. Bastos
Hi, all: I have a question when I read the book writed by Razavi. In the book, in page 140, there have a sentense in the last paragraph: Thus, if (w/l)3/(w/l)0=(w/l)2/(w/l)1, then VGS0=VGS3, VX=VY. Note that this result holds even if M0 and M3 suffer from body effect. I do not know why when (w/l)3/(w/l)0=(w/l)2/(w/l)1, then VGS0=VGS3, VX=VY. a
how to mitigate body effect in BJT ...normally by keeping low reverse voltage to collector base junction we can avoid it.. is there any other soultion in sight to mitigate it
the textbook tells me when Vbs=0 there is no body effect... is anything changed?
Yes, you can. there are some papers talk about this body effect and sometimes it's called "back gate". do a google search and you will find more information.
Hi all: For a diode-connected load, why the input impedance seen at the source of NMOS is lower when we consider the body effect. If we don't try to derive the equation, do you have any intuitive explanation? Thanks
Hi, if i connect bulk of the headlight nmos Q1 to the source of it so as to eliminate body effect, is the circuit still able to operate right? If that, why do not people choose this scheme?
using Deep-Nwell , the body effect will be relieved
Hi, Do you know how to find Vt, ro, uCox, and the body effect parameter when VGS = 0.9V? Please help. Chi
Hi, When two NMOS transistors are connected in series then the NMOS tarnsistor in the top transistor experiences higher body effect because its Source terminal is not at VSS value. But when two NMOS transistors are connected in parallel then the body effect each experience is same as that of a single NMOS transistor.
Having body effect is an advantage or disadvantage? I think that it is advantage as well as disadvantage bcoz wen we consider the three series nmos transistors then bcoz of body effect that is Vsb =0 for the last transistor so the effect is les i mean the input can reach faster than the other two (...)
wat is body effect wat are its implications on the device and design
Dear Dude, body effect Normally the source and substrate must be at same potential. If it is P substrate then it must be connected to negative terminal if N substrates it must be connected to Positive terminal because the PN junction between the diffusion and substrate must be reverse biased. Then only it is possible to control the flow of
Do we have body effect in NMOS and PMOS individually ?????????????????????? If yes why and how? plz explain me
as title, Why BJT does not have body effect? That is, why there is no gmb in BJT small signal model? Thanks!
The rectifier block uses a cascaded Dickson voltage multiplier circuit with multiple cascaded sections in order to convert the extremely low input voltage up to a potential suffi cient for operating CMOS circuits. The bulk terminals of the PMOS transistors were tied to the gate and drain terminals (back-bias) to reduce the effective threshold vol
Hi, every body, I have a question that is about the source follower (common-drain amplifier) and body effect. Why does increasing the output bias level can reduce the percentage of source to bulk voltage due to the signal? Could everybody explain the reason?
Can anybody please tell me the difference between the two figure of the NMOS transistor and what does body of each transistor determines about each transostor output.... Thanks in advance
what is body effect in CMOS?and how it will come and how it will reduced?
I was studying mosfets and as i was reading Microelectronic Circuits by Sedra & Smith, I saw the concept of body effect. Now the body effect and why it is happening is clear, but there is one thing I didn't understand. When Vsb is increased Vt also increases so far so good but why the hell does drain current (...)
Hello all, In razavi's design of analog CMOS integrated circuit, chapter 3, it states/shows that body effect decrease the output resistance. But I find it puzzling. I bias the NMOS source with a certain voltage, eg 0.3V. Setup 1: Base and Source are connected together to 0.3V bias. (No body effect) Setup 2. Source (...)
Dear All, If we do the small signal analysis of 1. CS stage with source degeneration ( ie. additional resistor at the source terminal) 2. Source follower 3. Common gate stage all the three have their source voltages varying as the input voltage varies, hence all of them would have influence of body effect. However, in th
I am trying to find a q point. There is a body effect, but my vtn is 1 anyways. What region of operation should I assume. Saturation region or triode region? Assuming that your Vgs (gate-to-source voltage) is larger than Vtn, then the operation region only depends on Vds (assuming the basic square-law model). In tha
Hi, Why PMOS and NMOS in an nwell process have different body effect coefficients?
in the cmos there are intrinsic bipolar bjts. if you check the diagram of the cmos with n well you can see that the source and drain of the pmos is p+ and the well is n. and the substrate/body is ptype. so it can work as a pnp transistor. similarly there are other intrinsic bjt's. these are called parasitic transistors as they usually badly affect
Hello, Put simply: - body effect extends the depletion region around the source. - DIBL effect extends the depletion region around the drain. !!! BUT !!! - body effect increase Vth whilst DIBL reduces it. How does this happen since both DIBL and body effects (...)
Never heard of "couple effect". Do you mean "body effect"?
The body of an NMOS is connected to the lowest voltage point in the circuit and for the PMOS the highest voltage point. which are usually the sources. The reason is as follows. Consider an NMOS. The body or substrate is p type and the source and drain are n type. If the substrate is at a higher voltage than the source/drain than the (...)
Hi, Does anyone have a reasonable Pspice model for the CD4007 mosfet Array? It would be nice if the model also include the body effect. Thanks.
Hi, Can someone tell me how to vary the threshold voltage of mosfet in hspice. Is it enough if i give a value for Vth0. I tried this M1 d g s s w=x l=y vth0=z But this kind of declaration is not changing the vth value.All this time i have been giving some substrate voltage and getting the required vth( body effect). Is there any (...)
... why should S-oriented device have higher vt?, as both need same voltage(Vgs) to form inversion layer. This is not correct, sorry: The threshold voltage Vt of a mosfet doesn't depend only on the gate control, but additionally on bulk control (which in this case is the well) - called the body-effect. The body-
Look up "body effect". -Vbs adds to VT at about a 0.6 scale factor (Vbs being -1V, increases VT by about 0.6V). The real number may be found in the model card. Forward bias gives you a lousy BJT, where you probably didn't want it.
Hi all, i want to know how to extract mosfet parameters e.g:(Vt,gamma,body effect coefficient,lambda...) "i know it may be a repeated thread but i already read the related threads and it cant help" so, i am using orcad capture cis & i am using MTP6N60 and i want to know from where to start .....
BSIM3v2 models apparently model the mosfet's breakdown voltage through the anti-parallel body-diode's BV parameter. If you need separate diodes for source and drain, s. the following page from the BSIM4v62 manual and use dioMod=0 or dioMod=2 :
hello everyone can any one explain about non-ideal characteristics of a mosfet Velocity Saturation? Mobility Degradation? Channel Length Modulation? body effect?
hey guys, what are some advantages and disadvantages of drain extended mosfet over standard low voltage mosfets? assuming I am using these for a common drain amplifier for both high and low voltages? does drain extended mosfet have body effect? thanks!
A float nwell is usualy used to cancel body effect in PMOS diferential parir in amplifiers. The problem is that this well has a capacitance to substrate that has at least two effects: 1- Injection of substrate noise in the node. 2- PSRR gets degradate due to the lower pole frequency in that node. I do not understand the anwsers (...)
for a standard LDO - yes, a bigger mosfet is the only way to reduce dropout. some advanced methods are to: -use low-threshold or depletion device as pass transistor -body boost (modulate the tank voltage in order to make body effect lower Vt) -charge pump the gate higher than Vin.
vt is a parameter of channel lenght in both pmos and nmos. this effect is called channel modulation effect considered with parameter lambda in the equation of cmos current equation. the best way to bypass this altering effect is to connect source to bulk of the mosfet. I think what you said should be (...)
How do i calculate body effetc of cmos?
i run hspice simulations recently, found that the threshold voltage is different for same device, i mean other than body effect, is there any other factors affect threshold voltage?
Here are some Questions......... Explain why & how a mosfet works Draw Vds-Ids curve for a mosfet. Now, show how this curve changes (a) with increasing Vgs (b) with increasing transistor width (c) considering Channel Length Modulation Explain the various mosfet Capacitances & their significance Draw a CMOS Inverter. Explain its