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47 Threads found on Body Effect Mosfet
The derived equation for gm is assumed to be in body effect existing condition, then it is not correct when vsb = 0
how to avoid occurance of Miller and body effect in BJT..? SOLUTIONS ARE WELCOMED
as far as i thought ,,body effects makes the threshold voltage of mosfet changes,,,so,,you must care when placing the mosfets in series that they still operate in saturation region and this depend to a great extend on the supply voltage ;as it shrinks down ,placing mosfets in series becomes more difficult (...)
In both body effect and DIBL, the width of deplition region increases, but in body effect the threshold voltage increases while in DIBL Vth decreases, Why???
The body effect describes the changes in the threshold voltage by the change in VSB, the source-bulk voltage of the mosfet. Since VSB influences the channel and hence the Threshold voltage (when it is not tied to the source), it can be thought of as a second gate, and is sometimes referred to as the "back gate"; the body (...)
hi i use 0.18UM180FDKMFC-FDK in my design i have to avoid body effect so i need to connect the bulk terminal of NMOS to its source but the problem is the process is twin well so can i use RF mos in the kit?it has 4 terminals (s,D,G ,B) , when i see RF transistor layout it has a layer called DNW ,does it mean "deep n well"??? an
I found on my notes that for an NMOS with increase in Vsb voltage body effect increases, Vt also increases. But it is mentioned that with Vgs constant id increases which I feel is wrong since id is proportional to (Vgs - Vt)2. Hence I think id should decrease. Please show me the ligh
Hi, Does anyone have a reasonable Pspice model for the CD4007 mosfet Array? It would be nice if the model also include the body effect. Thanks.
Hi, Can someone tell me how to vary the threshold voltage of mosfet in hspice. Is it enough if i give a value for Vth0. I tried this M1 d g s s w=x l=y vth0=z But this kind of declaration is not changing the vth value.All this time i have been giving some substrate voltage and getting the required vth( body effect). Is there any (...)
... why should S-oriented device have higher vt?, as both need same voltage(Vgs) to form inversion layer. This is not correct, sorry: The threshold voltage Vt of a mosfet doesn't depend only on the gate control, but additionally on bulk control (which in this case is the well) - called the body-effect. The body-
"... Drain current .... increased due to immobile cahrge in the depletion region" What is effect of Vth then? Is should reduce drain current? I know that, back gate effect increase the trance conductance looked at source. Expect if you can elaborate your point. First re-read
Hi, I simulated 4-stage Charge pump with dynamic CTS. When I have given 1.8V of input voltage, I observed 7.72V as output when the NMOS bulk is connected to ground and PMOS bulk connected to drain.(Highest potential) At the same time, I observed 8.3V as output when NMOS bulk and PMOS bulk are connected to source. Can you please let me
Look up "body effect". -Vbs adds to VT at about a 0.6 scale factor (Vbs being -1V, increases VT by about 0.6V). The real number may be found in the model card. Forward bias gives you a lousy BJT, where you probably didn't want it.
Hi all, i want to know how to extract mosfet parameters e.g:(Vt,gamma,body effect coefficient,lambda...) "i know it may be a repeated thread but i already read the related threads and it cant help" so, i am using orcad capture cis & i am using MTP6N60 and i want to know from where to start .....
Never heard of "couple effect". Do you mean "body effect"?
I'm a student and im weak in electronics and electric issues ( i like computer science and programming ) I have problem and can't solve it , i tried hard but nothing solved yet it might be easy but my mind stuck and give no solutions ..... plzz help me !! dont give me answers just the hints problem 1 assume kn = 120 , Vtn0 = 1V , c
BSIM3v2 models apparently model the mosfet's breakdown voltage through the anti-parallel body-diode's BV parameter. If you need separate diodes for source and drain, s. the following page from the BSIM4v62 manual and use dioMod=0 or dioMod=2 :
hello everyone can any one explain about non-ideal characteristics of a mosfet Velocity Saturation? Mobility Degradation? Channel Length Modulation? body effect?
The body of an NMOS is connected to the lowest voltage point in the circuit and for the PMOS the highest voltage point. which are usually the sources. The reason is as follows. Consider an NMOS. The body or substrate is p type and the source and drain are n type. If the substrate is at a higher voltage than the source/drain than the (...)
Channel length modulation , body effect , ssubthreshold region iam asking about why these effects titled " Second order effects "? what is the reason of this naming ?
for a standard LDO - yes, a bigger mosfet is the only way to reduce dropout. some advanced methods are to: -use low-threshold or depletion device as pass transistor -body boost (modulate the tank voltage in order to make body effect lower Vt) -charge pump the gate higher than Vin.
vt is a parameter of channel lenght in both pmos and nmos. this effect is called channel modulation effect considered with parameter lambda in the equation of cmos current equation. the best way to bypass this altering effect is to connect source to bulk of the mosfet. I think what you said should be (...)
i run hspice simulations recently, found that the threshold voltage is different for same device, i mean other than body effect, is there any other factors affect threshold voltage?
JFET has low GS resistance. (GS has junction) mosfet high GS resistance (GS no junction) JFET for small voltage and current applications. (Usually you can not find power JFET at the market) mosfet has reverse body diode. JFET hasn't.
Here are some Questions......... Explain why & how a mosfet works Draw Vds-Ids curve for a mosfet. Now, show how this curve changes (a) with increasing Vgs (b) with increasing transistor width (c) considering Channel Length Modulation Explain the various mosfet Capacitances & their significance Draw a CMOS Inverter. Explain its
the parasitic diode of mosfet or the body diode is the due to the PN junction formed between the source and the gate.... this usually causes latchup when left open and is connected to the lowest supply to avoid latchup but due to its reverse capacitance and diode nature it causes trouble... so generally body and source are shorted to (...)
hi all, can any one give me sol that if mos body is on variable potential and W and L of mos is varing what effect can get:?:
Agree with yxo. It is empiric rule. But PMOS for diff-input-pair still has its merit such as no body-effect, low 1/f noise.
Hi, In my design, the power mosfet is integrated on the chip. We have the concern the body diode of the power mosfet will have adverse effect for the performance. I wonder if this effect can be represented in the simulation? Put another words, in normally, the body diode is imcluded in (...)
Can somebody elaborate on the "basics" that one must absolutely be aware of, to learn analog circuit design? Let's break it down to each topic...say 1) Single Transistor Topologies 2) Diff Pair 3) Current Mirrors etc.. What is the "experienced" view on this? Does everyone begin with a paper-pencil approach or an "intuitive" understan
the file u provide is level49, is hard to compare to hand calculation for acedemic purpose. not sure who else got level 2 process file. i just need few parameter to be in for my simulation. Gamma and Phi to count in body effect? please help and it is urgent. ---------- Post added at 16:07 ---------- Previous post was at
My understanding is that Vth not only depends on the process corners but also on the mosfet aspect ratio(neglecting body effect). To test out statistical variations, I think you can use the gaussian distribution with the the mean set to your Vth0 and a +Sigma,-Sigma set to their 0.34% of the mean. NOTE: AFAIK, a good layout design can (...)
Hi, Please any body explain clearly what is dv/dt and "shoot-through"in mosfet/IGBT. How these effect on IGBT/mosfet. Regards V. Naresh Kumar
Read up on body effect. Some designs make use it for sub-threshold operation. Some want to eliminate it by shorting the body to source, especially in cases where you do not have enough headroom.
1) Vgs-Vds? it depends operating point that the circuit works. 2) PMOS's body can be connected to source or Vdd according the circuit design requirement. It might lead to Vth increase if the body voltage is not equal to source voltage. It is called body effect that can be found for details in any basic analog circuit (...)
I don't have Razavi's book off hand, but my guess is that he was using a resistive load. Notice the words "may" and "For example". For your first answer, the current is given by (Vin-Vgs)/R. In this case, he was stating the numbers from a hypothetical R load that will give the mentioned figures. For the second answer, refer to the first one. If the
Hello, I have a doubt regarding the physics involved for the threshold voltage of a mosfet. If the Source-Bulk voltage is increased above zero (body effect), how would it physically lead to an increase in threshold voltage ? My understanding was that (referring to an n-channel mosfet), the threshold voltage was (...)
mosfet or Metal Oxide Semiconductor Field effect Transistor is basically a transistor, generally used for amplification of switching of Electronic Signals. It generally has four pins, Source; Gate; Drain and body , but in some devices the body and Sources are interconnected to make it three pins. IC or integrated Circuit: (...)
Vs will depend on what is attached to it. Is the source attached to a resistor? Is it attached to GND? Is it attached to a voltage source? Is it attached to a capacitor? Additionally, depending on what it's connected to, the answer may depend on threshold Vgs, carrier mobility, gate capacitance, mosfet dimensions, lambda, and body (...)
Any body know about how can i measure the load through mosfet(parallaly connected) without using CT coil and Hall effect sensor . i mean am going to switch this mosfet through 50Hz square pulse and load may be approximately > 2KVA (so shunt res not possible to measure load). i want to know, how to find the load across (...)
The mosfet allows the current to flow in both directions when it's on. The combination used here is meant to eliminate the effect of the body diodes when the D-S voltage is reversed. So, yes this circuit can be used as a bidirectional switch. Just make sure the control voltage is always applied between the sources and the gates, with (...)
Hi, Short circuit is not discussed in the features of this circuit, only overcurrent protection is provided. (Of course overcurrent may include current caused by a short circuit.) See points 11.4 11.5 and 11.6 on page 8 of your link. So you have to remove the extra load that has caused the overcurrent or reduce the effect of the load by i
It is all explained in the BSIM4.6.0 mosfet Model - Users' Manual K2 = Second-order body bias coefficient LPEB = Lateral non-uniform doping effect on K1 and many more. I think the BSIM models have more parameters than any other device.
hi all i am searching for an books about cmos analog design which can help i like those topics : 1-analog design 2-fabrication topics "VLSI" 3-analog amplifiers i like books that have detailed analysis and if there any books for the problems of mosfet like dumble effect,chockli diode,...............(device) it will be great only give me
I see at least some misunderstandings suggested by the previous answer. The circuit symbol shows both, substrate connection of the source (the arrow in the centre of the mosfet) and a diode between source an drain. As stube40 mentioned, the diode between source and drain is actually a side effect of the source-substrate connection, it's also cal
Just as the gate "pushes" on the body - accumulating, depleting or inverting it - so does the body "push" on the gate. If there is a depletion region in the poly, that adds to the effective Tox, in a sense. Gate poly implanted from above, tends to have less dopant at the top gate interface (you could position the peak at the interface, (...)