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57 Threads found on edaboard.com: Charge Sharing
If you have a capacitor charged to a voltage v1 then you connect another capacitor in parellel, which is charged to a voltage v2 then some charge from the capacitor charged to high voltage go to other capacitor and now , voltage across both those capacitor is v3, which is in between v1 and v2. this phinominon is (...)
Would anyone please provide some materials that talk about the charge sharing and bootstrapping in a charge pump? Journal papers, books? Thank you.
What is charge sharing? Explain the charge sharing problem while sampling data from a Bus TNX
hi all, Does charge sharing in a charge pump affects the PLL jitter? Is there is any relation between the PLL jitter and charge sharing? pls reply Thanks & Regards SavithRu
hi everybody, Can i know wat is " charge sharing"?
Hi all, I have doubt related to static CMOS circuits: Do we have the charge sharing and charge leakage problems in Static CMOS circuits ?? If yes,how ? If no, why ? Thanks, Sp3
Hi Rohit, charge sharing is SI issue in dynamic logic design. There two phases in a dynamic logic precharge and evaluate. The charge stored on the output node during the precharge phae will be redistributed over o/p node and mos transistor in the discharge path. This causes a drop in (...)
I am reading "Digital Integrated Circuits" by Jan Rabaey. I have a doubt in charge sharing in digital CMOS design. Here's the In here the output is initially charged to Vdd. Now B=0 and A makes a transition from 0 t
Hi, Please see the attachment. This is the state at t=0 with C1 initially charged to Q and C2 to Q- ΔQ. Where, Q=C1*V=C2*V. 75377 My question is what will be the amount of charge in each of the capacitors after charge sharing.
Hi, In charge pumps to remove charge sharing a unity gain opamp is used. Again to minise current mismatch or increase resistance of current sources, a servo opamp can be used as shown in razavi books. I want to know which method is more helpful in minimising spurs? I have power constaraint and want to use only one
ther is a trade-off between transistor size and efficiency: larger transistors need more charge at their gate, thus there is a optimum value for the size. BTW, I think 75% efficiency is not so bad specially if it is low power! BEST!
A charge pump is a phase error intergrator. Two linear current sources , one postive and one negative (pumps), either add charge to (phase lagging error), or remove charge from (phase leading error) a capacitor (the accumulator). You will need to study "Feedback Control Theory" to understand circuits more completely. Some online (...)
Yea its to mitigate charge sharing problem between the drain of PMOS, NMOS and loop filter. Basically it fixes the drain voltage so that the drain voltage does not pull to gnd or Vdd when the switch is off.
A charge Pump often use a opamp to eleminate charge sharing. so, what is the relationship between the opam Unit Gain BandWidth and PLL Loop Bandwidth(closed loop -3db)? Thanks.
Sorry for the late reply... The unity gain buffer is used to decrease voltage step at the CP output at turn on. Due to charge sharing between the output node and both other sides of the N or P switch, the voltage at the CP output shows a step when both swirchs are turned on, while in idal case the output, which is the control volta
Hi guys, i am plotting the current at the output of charge pump of PLL due to charging and discharging of Ip into the loop filter. I see some spikes and over shoots due to charge injection. I am not sure how to make a comment on the magnitude of injection. I would really appreciate if someone gives me some feedback. thanks:cry:
I don't understand the precharge? I know it is used to closed a row in bank, wrt to the active? But what is its purpose in the low-level electronics? Also what is its usage? do I have to do everytime I do a read in a row and want to read the next row, I have to precharge the first row first and then move to the second row? or can I just ignore i
Hi SLS is a switch-level simulator that can be used to simulate the logical and timing behavior of digital MOS circuits. In the simulator, transistors are modeled by grounded capacitors and a switched resistor. Each node in the network has a logic state O, I or X (for unknown), and each transistor has a state on, off or undefined. Many character
Hi Switch Level Simulator The SLS Simulator SLS is a switch-level simulator that can be used to simulate the logical and timing behavior of digital MOS circuits. In the simulator, transistors are modeled by grounded capacitors and a switched resistor. Each node in the network has a logic state O, I or X (for unknown), and each transistor has
here there's some tips: "When reducing the gate length of an MOS transistor, the depletion regions around the source and drain have also to be reduced, to avoid effects such as charge sharing and punchthrough. To scale down the depletion regions, the doping oncentration of the substrate can be increased and the biases applied (i.e. the supply vo
dll can used to acheive a quicker lock with the input.i have another question ,what is the main cause of jitter in a DLL.since in a DLL there is no VCO unlike a PLL,i believe the main causes should be the charge pump current mismatch and also the pfd charge injection and charge sharing phenomenon.correct me if iam wrong. (...)
You can use a pMOS and an nMOS transistor (minimum size) in parallel as a transmission gate switch. You can read about it on the internet. just Google. There will be charge-sharing problems, the solutions to which can also be found in text-books. I remember helping someone on the same topic; You can also use a voltage variable resistor with v
you can use the conventional phase frequency detector consisting of 2 flipflops and an and gate. you can find the information on it in most of the books. when you design digital gates, let's say an inverter, make the pmos 3 almost 3 times larger than the nmos so that you'll have same delays for 0>1 and 1>0 transitions and a threshold voltage of VDD
What are the advantages of transmission gates then? Hi there, first the tristate buffer has its advantages over transmission gate(TG);the tristate buffer is a buffered transmission gate. practically in design the TG has its constrains due to its bilateral nature as they conduct well in both directionsmaking the driving cap
Hi, I think the drop is due to the charge sharing to the parasitic cap. from the diode connected NMOS, in one clock cycle C*(1.8-0.5)=(C+Cpar)*VCCOUT_min so if the C is much larger than Cpar, the VCCOUT can be more close to VCC-Vthn.
ya, very interesting from design of view, it's not possible to implement a current circuit into charge sharing memory cell. cell of 1tsram is as same as dram structure. if you try to using current sensing in this kind of cell, you got a big trouble. since current of this cell appears only in the moment of wl turns on. After charge (...)
If you analyze the master slave architecture you'll find that on the rising edge of the clock (for positive edge trigerred the master master latch works on negative level) the data is transferring from master to slave .Due to RC delay it takes some amount of time (i.e. the hold time) for that. As far as your question is concerned that node is alre
1)exp various mosfet capacitance&their significance? 2)exp sizing of inverter. 3)give the expression for cmos switching power dissipation. 4)what happens to delay if u increase the load capacitance. 5)what happens if we increase the number of contacts or via from 1 metal layer to the next. 6)Draw a transistor level 2 i/p nand gate.explain it s
this is quite a common question asked in many interviews.There are two capacitors C.Intially one capacitor is charged to V volts while the other is at zero t=0,a switch connects both of them in parallel.Due to charge sharing the voltage at the node connecting both of the transistors become V/2 volts.Now the question is the energy before th
Hi, thank you for replying. I want to do a hand calculation of the NAND3 gate. I wish I can have the instantaneous, average as well as worst case power consumption. I also want to take the charge sharing effect into consideration. The transistor we use is nano scale transistor, so I doubt I can not use the square law of current equation directly. W
I will use this opamp for sample and hold I think to use two path and ı try it. but because of clock's of sample and hold switches opamp settling time increase . I think its reason is clockfeedtrough and charge sharing. I use dummy switches for it but i didnt solve the problem.
@ AdvaRes good sizing can ensure that but i can't get that sizing @ JoannesPaulus does this overcome charge sharing and all the problems of tspc moreover what about at what ratio should i increase the transistors near the power supply thanks
You can use capacitor with charge sharing for DAC.
"When reducing the gate length of an MOS transistor, the depletion regions around the source and drain have also to be reduced, to avoid effects such as charge sharing and punchthrough. To scale down the depletion regions, the doping oncentration of the substrate can be increased and the biases applied (i.e. the supply voltage) can be reduced. The
It might influence. Input capacitance of amplifier might have charge sharing with switched capacitors.
i design a cap type charge sharing sar adc , it needs to be dischage when each conversion cycle. please see the pic show as below , the node vx=0 when sampling mode , and it is pull down by N3. but when the hode mode , the N3 should be disable. but , since the vx will be negative voltage , the MOS N3 body diode will flow to have a leakage
what will be voltage if its ideal condition? 0 Volts. In ideal condition uncharged capacitor will be like a short circuit. Except C3. 0.8V will stays. :-D
If you are giving interview for a memory designer, you should have a strong understanding of MOS concepts. As a fresher interviewer expect only basics from you. 1. You should be able to explain MOS characteristics. 2. What are various effect of scaling? 3. Various types of memories 4. Read/Write operation of SRAM. 5. charge sharing with between mem
Dear all, Could anyone clarify what are the losses related to flying/output capacitors in a Switched-Capacitor DC-DC converter? As far I have studied there are three losses: 1. charge sharing loss 2. Charging and discharging loss 3. Capacitor bottom/top- plate loss. I am just confused about the first two loss components - whether th
If your charge manager looks after preconditioning at lower current and post trickle charge and low current, and charges for 1C, it seems ok. MCP73871 is Microchip's solution.
This is a patented layout whereby the control gate of the flash cell combined with two opposing source and drain connections can be used to place charge on the nitrided gate on either side. I do not "yet" have access to the layout but a simple way to visualise this is two vertical strips of active area and one horizonal strip of Control Gate poly.
If both batteries are fully charged you can parallel them. After that they will discharge and charge by sharing the current each way.
Which is the difference between paralleling bipolar transistors using emitter resistors without base resistors or base resistors without emitter resistors? I'm designing a psu with 13,8V@25A that will power my HF radio plus charge a 13,8V 45Ah car wet battery, so what configuration should I use? Positive regulation or negative regulation?
If you are in a place with low humidity then static charge on the lines is a possibility. Put a 100K resistor across the line and see how much tthe voltage drops.
Hello, Gate-to-substrate capacitance exists, it's the capacitance of the gate poly outside channel to substrate. the gate poly extensions outside the active region will have capacitance, As asic_ant said, you may think of MOS as four plate capacitor, all sharing charges between each other, so any change of any node voltage will affect the re
Dear Dude, Cross talk is an SI issue,occurs due to placement of wires close to each , like sharing((like mingling or crossing the potential charge) the charge b/w two wires, becos of formation of (like coupling)coupling capacitor b/w these wires . because of this there will be a disturbance or affect called as interference b/w these wires (...)
well you are doing load sharing by the sounds of it. there are special controllers made for you. your converters, though bot 28V.......they will not BOTH be ABSOLUTELY 28.00000000V. They will be different...and each will charge up its output cap to different voltage..and when you change over....SURGE AWAY!!!!!!!!!!!!!! You must make it
I want your suggestions and ideas to assure fast charge for the 2 Li-ion batteries, i guess that i have to use a microcontroller Be generous and help me with that please..ThanksWhat sort of help do you expect? Cheers
Hello everyone. It's been a while since I worked on PLLs so I'm a little bit rusty on how to design one. I'm very familiar with the theory behind it (understand the function of each block; concepts like pull-in range, lock range, etc; why PFD is better; why charge pump is needed; how the loop filter order affects the stability; bla bla bla) but
folks, I got my hands on the brand spanking new STM32VL Discovery boards, free of charge, courtesy of our ST rep. the board is small, comes with a debugger / programmer and a STM32F100RB6TB device: ARM 32-bit Cortex-M3 Microcontroller, 24MHz, 128kB Flash, 8kB SRAM, PLL, Embedded Internal RC 8MHz and 40kHz, Real-Time Clock, Power Saving Mod