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Cmos Substrate Connection

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12 Threads found on edaboard.com: Cmos Substrate Connection
In a real cmos process (on p-substrate), the substrate must always be at the most negative voltage level. So your opAmp and comparator connection is ok (opAmp's -2.5V is identical to comparator's 0V = GND = substrate). Now just forget about the opAmp's ?2.5V supply and call it a 0 to +5V supply, too, same as (...)
The circuit seems to be correct. Is it so? You can approach the problem in two ways: - copy a cmos AND gate from literature - derive the circuit respectively correct a wrong approach based on known behaviour of MOS transistors Presently I'm under the impression that you have difficulties with either method. Please compare
cmos cannot handle any input getting greater than the supply rails due to a buried SCR in the substrate creating a virtual short circuit across supply. But I cannot comment on your circuit.
1. To avoid the threshold voltage variation with source voltage we can connect the bulk to source, but can we practically connect them with every technology or just with SOI and why ?? In std. cmos technologies you can do this just for pMOS, because you can give it its own pWELL. All nMOS have to be in the same p-
Dear all, I have a question about the HFSS VIA usage. I hope anyone could teach me. Actually, I use HFSS to synthesize the cmos inductor and transformer passive model. As you know that there are several substrate layer with different permittivity value. In my case, each metal embedded in each substrate layer. For example, M6 (...)
hi.. i am layouting full adder using cmos in cadence virtuoso,but i m facing problem while connecting bulks to the supplies... anyone tell how to connect these to supplies... i have attached a fig. of my layout.. help me
Dear all, What is a typical value for the resistance of the substrate connection of each MOS in a 0.35 cmos process? I am talking about the effective resistance that, for instance, the bulk terminal of an NMOS will see to the ground line, when directly connected to it (like the typical NMOS with source and bulk tied to ground that are (...)
In cmos fabrication due to its structure there may be chance for inferring Parasitic Transistors , due to which there will a connection between vcc and vdd. Due to this IC may get damage. this is Latchup effect. u can get more info from this..
Can any one explain how a substrate connection near to souce of the cmostransistor reduces the LATCHUP. Hi Chandrarao The substrate taps are heavily doped (P+ /n+) which means they act as a low resistance path for any leakage current in the substrate thereby inhibiting the formation of vo
Hi, i have a question on the substrate connection for mixed signal circuit with p-sub lightly-dopled submicron cmos process. In my mixed block, we have seperate analog vdd/gnd and digital vdd/gnd for crosstalk reduction from digital part. I want to know the substrate connection, in my cicruit, i (...)
Just want to confirm, the N-Well of MIMCAP and P+ poly resistor, in a p-substrate twin well process, can be connected to either Vdd or GNd. The decision as to whether to connect N-well to Vdd or GND is based on which has a cleaner signal. Is that right? Since the N-Well is simply there to shield the MIMCAP and poly resistor from the substrate.
substrate and bulk are different, you can check it in any book about a typical nmos or cmos process.