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43 Threads found on Doping Concentration
You have to get all technology constants, like doping concentration, epi layer thickness, oxide thickness, etc and calculate a flat-band voltage with some other parameters and combine them to get this non-physical parameter as threshold voltage (good luck in this way ;-) ) Clarify your question, please.
erikl, nice cross section view of the transistor with the concentration values. Can I ask you where did you get that? From a slide presentation about this process from a former colleague - about 15 years ago. - - - Updated - - - How can I calculate
The resistance between the base contact and the active region of the base under the emitter is Base Spreading Resistance. This is dependent on the base region doping concentration and width of the base.
Depending on NWell surface concentration you may have a Schottky contact instead of ohmic. Or not. The foundry has probably preferred not to look too closely at this if the flow is "just CMOS". You could perhaps dig up the NWell doping, make an assumption about surface vs bulk concentration and then refer that to the literature about how (...)
Hello everybody, this is my first post in this forum. I'm trying to discretize a continious doping prof?le in sentaurus SNMESH, but after running SNMESH, i can't get any concentration. I use Sprocess to create a simple silicon cuboid with uniform doping to be my structure, ND=1020 (cm-3). And use SNMESH t
Hello, I am trying to write a python process code for 40nm double gate soi n- channel mosfet and have got stuck with some parameters which are : vertical and lateral characteristic length of source/drain doping, Rmax and Rmin of source/drain doping, offset length i.e source/drain implant measured from poly edge, well doping (...)
Hi, I trying to simulate simple PN diode using GaAs. I am using a P-concentration of 2e17cm-3 and N-doping of 4e19cm-3. When i run the code in forwardbias and checking the electron concentration in P-region, the plot doesn't show me the intrinsic concentration. I have no idea why the software is not showing the intrinsic (...)
Hi, can anybody help with the doping concentration of high voltage N-Well with respect to N well . Any document refering to its effect on device breakdwon will help a lot... Deepak
I read in article that "At short channel lengths the halo doping of the source overlaps that of the drain, increasing the average channel doping concentration, and thus increasing the threshold voltage. This increased threshold voltage requires a larger gate voltage for channel inversion. However, as channel length is increased, the halo do
... does it matter or is it allowed if NW and NWH are overlapping? Surface doping concentration of an NW is considerably higher than that of an NWH, hence the breakdown voltage of an NW to substrate is much lower than for an NWH, possibly lower than 5V. Additionally the doping concentrations of overlapping nwells
Si in your HEMT structure is a doping. doping atoms are added to the host material (AlGaAs or InAlAs). The concentration o fthe doping atoms are many orders of magnitude (2-3-4-5) lower than the host atom concentration. That's why the material properties of the semiconductor (bandgap, mobility, etc.) are (...)
1.3 is your P(process or doping concentration), 1.08 for your voltage and 130 for your Temperature. That's how it is named generally. Yes, When taking the corners we can have variation for any of the PVT conditions because of the fact that your doping concentration can reduce or increase the speed of your device, leakage (...)
The body-effect factor γ depends on its bulk doping concentration NB , which of course is different for PMOS and NMOS transistors: \gamma = {\sqrt{2q\varepsilon_{Si}N_B }\over{C'_{ox}}
Increasing doping concentration means that you are placing more charge carriers. More charge carriers mean that your device will be able to handle more current, therefore increasing drain current capacity. It also means that more carriers have to recombine so the leakage current will increase. I'm not so sure about the threshold voltage, though.
I am writing a code for P-I-N based solar cell and there I am stuck with the intrinsic layer concentration type. Basically, when defining structure specification in SILVACO, you have had to specify the doping concentration type and its concentration. But in this case, it is intrinsic region and undoped. What should I write (...)
If you think of the channel doping concentration: this is NCH
Dear all, I don't know if this is the right place to ask this query. I am currently working with spin on doping process to dope SOI wafer. I have a dopant with impurity concentration of 1e17/cc. Is it possible to have a higher doping level in the Si (say 5e17/cc) with this concentration? Thanks in advance
To reduce or minimize DIBL(Drain Induced Barrier Lowering), three ways are suggested, based on the assumption that Shor Channel Effect should be mininized to reduce DIBL. (improving swing) (reduce Xj) (increase substrate doping concentration) (reduce oxide thickness) I know the below two factors. but not the first two 'reduce Xj' and im
There are two effects which impact the border resistors in a WELL resistor array. 1. Lateral diffusion interaction So the doping concentration is little higher if there is a neigborhood WELL 2. Implant mask scattering The implants get scattered at the edge of the mask. So there are some scattered dopants from neighborhood mask. The probl
Mobility is related to doping concentration and I think you would just read it off a graph.
Hey I have a file in the xgraph format that describes a 1D doping profile (x column describes distance from silicon surface while y column describes doping concentration) and I'm attempting to use subMesh1D function to incorporate it in my device structure. However, I'm having problem with the 'Range' parameter and how the keywords x1 (...)
Hi, If you look at the equation for Resistance, resistance is a strong function of TC of the material used. As ekril suggested the nwell resistance has more dependence on T than Poly resistor or a metal resistor, which signifies the increasing order of the doping concentration (conductivity) of the material. To add to this, if we take a poly
Process corners reflect the change in doping concentration, which affect mobility of electrons, holes.... So you get different circuit results
Hi, I want to know some process parameters of CMRF8SF, N Well: doping concentration, resistivity; N+ Ohmic contact: thickness, resistivity. I can not find them in the ?model manual? and 'design guide'. Anybody knows where to find them? Thanks.
Thanks for the immediate reply. Then one more doubt : If diode cut-in voltage is a function of doping concentration, why are almost all silicon diodes having forward drop around 0.7V and germanium around (0.3V) almost irrespective of part number. Usually power diodes will have high doping concentration, right ? for them (...)
The impurity concentration is more difficult to control at a lower level. The gate nonsilicide poly have about 50 times the doping. More stable. Also the TC's are different. At low Rsq you have positive. RPH will have negative.
in a pn junction diode , if we inc the doping density of the p and n side(or just any one side), what will be its effect on the built in(barrier) potential difference ? (will it inc. or dec.)
n+ means a high N-type doping region; n- has lower doping concentration; n-diff is same as n+, it means n-type diffusion; pwell is p-type well.
mainly improvement in equipment (lithography) plus solving some technical issues like doping concentration , gate leakage and substrate leakage and MOSfet engineering and tons of other stuff y not 75nm well y not 74nm , if they have said any number , it would be questionable , but mainly i THINK this depends on the effectiveness of the reduction l
Based on the formular Q/C, the concentration of doping, geometric structure of SiO2 should be difference for Hvt and Lvt devices.
Hello What is a difference between PWELL and PSUB ??? Pwell and Psub are different regions in layout. Typically, Pwell doping concentration is higher than Psub.
HI.. I am confused which equations should i use to solve this question. Pls someone tell me the equations/ steps for it/final answer/assumptions made to calculate the question. A Si sample is doped with 10^16cm-3 boron atoms, and a certain number of shallow donors. The Fermi level is 0.36eV above Ei at 300K. What is the donor (Nd) concentration
Think of the process fabrication whenever possible in understanding layout. POLY is always grade A photomask, meaning the one of the highest ranking in photomask fabrication, same as some metals. Diffusion is instead not, also, it is formed from doping concentration by ion implantation, which is typically not very good in control compared with pol
Hello !! How I was studing!!! The lower concentrations donor and acceptor doping exist in intrinsic semiconductor 10e13 - 10e15 1/cm2 - P- Is the doping concentration in the semiconductor wafer 10e15 - 10e17 1/cm2 - P Is the doping concentration in the wall area 10e19 - 10e21 (...)
Between 0.18um standard CMOS process and 0.35um standard CMOS process, which doping concentration of the substrate (for example: P-Si) is higher? What order of magnitude are they? Thanks!
Since we care much on the threshold mismatch for MOS, you can vary the oxide thickness(tox), nch(doping concentration), dw, dl , dvth0 etc...
hi i would like to know how analytical doping varies with depth.i mean how the peak concentration varies with depth in analytical doping profile. cheers skr
TC is +ve or -ve for PolySi resistors ? Art of Analog Layout book says it depends on annealing conditions & it can vary (page no 163). Does this means it can be +ve or -ve ? Yes. It can be +ve or -ve depending on the poly doping concentration. This is true for unsal resistor. For metal and sal res, TC will be +ve.
Hi What is the difference between "n" and "n+" regions? Ya it's in the doping concentration, but i need to know what happens if i use "n"region instead of "n+" in the mos transistor
It doesn't occurr because of an increase in energy - that would be normal conduction. Let me see if I can explain it a different way. When the doping concentration is very high on both sides of the junction, the depletion region is very thin. In general, carriers are repelled by this barrier since they are not energetic enough to surmount it
what will happen to the thershold voltage of enhancement type MOSFET when i (i)increase the doping concentration of substrate, (ii)increase the width of the oxide layer?? it will be decreased...
Hi, For short channel devices to reduce the effect of drain induced barrier lowering we genrally increase the substrate doping concentration so that we inturn reduce the (drain-sub) junction depth(does junction depth mean the drain substrate depletion region which forms). Can someone please tell me how with increase in dopping conc of the substra
VBEO ( Base Emitter Open Collector Breakdown Voltage ) is a limit for every bipolar transistor. It can be up to 2V and beyond this limit , B-E junction of the transistor may be broken. It depends on semicondictor technology and doping concentration in junctions. Rgrds