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147 Threads found on Drain Source Connected
Since the drain and source of a jfet, can be interchanged, can a jfet in common gate configuration be used as a bidirectional amplifier (HF frequencies)? The source impedange will be low and the drain impedance will be high, but the antenna could be connected to the source and the RX/TX to (...)
The schematic doesn't even put the PMOS symbols correctly in place Mistake in drawing: Power is supplied to drain of PMosfets and source of Pmosfets are connected to drain of Nmosfets. Correction: Power should be supplied to source of PMosfets and drain of Pmosfets should be (...)
First I would check that your layout is appropriate, according to the manufacturer's recommendations. A little extra source inductance can have a large impact. You may need to add lossy elements to the amplifier to get wideband stability. This can be shunt resistance on the gate or drain to ground, or a series RC connected between the gate (...)
Hi all, I have a small issue. how can i drive a IRLML6402 Mosfet with source voltage of 9V and gate 5V. i have tried a circuit in which i am using IRLML6402 Mosfet. source Voltage = 9v. Gate Voltage = 5V. But i am not getting any output at drain Pin of mosfet.
if drain terminal of an nmos is open and source terminal is connected to 1v+ and the gate is also biased to a positive voltage VG, the Id=0 and Vds=0. can anyone explain? especially "Vds=0" I thought when a terminal is open it means we don't know its voltage, how does it say: Vds=0??
Hi, The thermal noise due to a MOSFET can be expressed by either a current source In (connected between the drain and source terminals), or by a voltage source Vn (at the gate): In? = 4kTγgm & Vn? = 4kTγ/gm So, to reduce noise, should gm (
Hi, We are experiencing a drc error on one gate of a test chip. The signal goes to a MOM cap and a pimplant resistor chain and no where else. This gate signal is now being flagged as a floating gate with the drc error as PO.R.8 { @ It is prohibited for Floating Gate if the effective source/drain is not connected together (...)
They are completely different. differential pair: Q1 and Q2 sources connected cascode: Q1 drain connects to Q2 source, in case of folded cascode Q1 and Q2 are complementary
Why does your upper Mosfet have 4 terminals? Usually the substrate is internally connected to the source terminal and cannot be connected to ground like you show. You have the gate connected to the drain so when the gate/drain and drain become 6V to 10V then the Mosfet turns (...)
You are not using a PNP transistor, it is an NPN. Your Mosfet is shown connected upside down. Its diode is conducting all the time because you have its drain at the positive supply. A P-channel Mosfet has the positive supply on its source and the load to ground on its drain.
Hi i have a idc source (i1) wer the +ve terminal is connected to drain of a transistor wer another pin (i2) is already given. And the -ve pin of the idc source (-i1) to second transistor drain and same to this second transistor drain another pin (i2) is given. I need to do the layout too. (...)
A Mosfet is turned on with a voltage from its gate to source, not with a current. What voltage did you use? The drain has a load connected between it and the positive supply voltage, didn't you use a load? What voltage did you use? What load resistance? Didn't you read the datasheets for the different Mosfets? The gate to (...)
124501 Like this circuit Mv1 and Mv2 transistors have their source and drain tied together. What's the purpose. this is VCO circuit, CVar , variable capacitance is measured from which node? X or Y? and that's the output of the VCO?
NMOS is NPN (drain Gate source) Diode connected NMOS is Gate tied to the drain. as indicated by the picture 124500 I have on the direction of the diode. 1)since Gate is P and drain is N, therefore the positive of the Diode should be on the Gate side? So, the picture with the diode should be (...)
These are simply two parallel nmos transistors (both sources in parallel, both gates in parallel, both drains in parallel, gates connected to common drain (or to common source, if these are two spare FETs). No current source(s) exist here.
Hi, I would like to understand the following thing: in RFID passive circuits there are MOS transistors, which work as a clamp or a modulator. These transistors are in parallel to antenna. drain is connected to one end of the antenna and source is connected to the other end. The example can be found here:
If the drain is connected to something "live", is it really a dummy?
What you have done is correct. But if the transistors share both drain and source, then it is the source that gets preference in shared layout. And the drains are connected through routing.
It will be badly polarised. There is a PN junction between p-substrate and n-well. Also PN junctions beween n-well and p-MOSFET drain/source. These junctions have to be in reverse bias.
As we know FETs have three terminals: source, gate and drain. Open source means that the source terminal is floating: it is no connected to either the GND or the VDD of the power supply. In this case you must use a pull up or pull down resistor depending on the connection. Open drain means (...)
I think your SIM program does not know anything about that unusualdepletion mode Mosfet. The currents are very low maybe because the drain and source are not connected to anything. The 13V zener diode is not going to do anything in that 6V circuit.
I think you should try a mosfet e.g. 2N7000 with source at 'E' and drain at 'C' of Q2. *are you sure R3 is connected to Ground? Allen
Are you sure it is the drain pin connected to ground and not the source pin? There are often low resistance components between the gate and source but not normally between drian and gate. If you are certain of the connections and the MOSFET itself is OK, look for shorted snubber components and possibly shorted driver (...)
... whether these plots are also valid for a PMOS which is saturated but not in diode connected mode... Sure it is. Just add a power supply between drain & GND.
Sir, I used the two ATF54143 transistors(Biasing Vds=3V, Ids=60mA)and connected capacitive shunt feed back and capacitor is connected between source of one transistor and drain of the other transistor. I tried to give the biasing for the two transistor, achieved the biasing for one transistor. What is my problem is , I (...)
i need the answer of below questions.. consider 2 nmos connected in series source of nmos 1 =vdd; source of nmos 2 =ground; and both nmos was in enable condition. output was taken from drain of both nmos 1 & 2 connecting point..... what about the output...
This is where the N+ source drain ground connection is also connected to the P-Well body by a direct N+/P-Well diode in layout rather than a metal strap with contacts to an isolated N+ ground and P+ body. So it saves layout space.
The body of an NMOS is connected to the lowest voltage point in the circuit and for the PMOS the highest voltage point. which are usually the sources. The reason is as follows. Consider an NMOS. The body or substrate is p type and the source and drain are n type. If the substrate is at a higher voltage than the (...)
Only drain should be connected to LOAD Why? The switch isn't intended to disconnect the load from the battery. It disconnects the battery when the external supply is active (and Vload > Vbat).
... one instance (a big MOS sliced into smaller ones, all having drain, source and gate but connected as one unit). So this one MOSFET instance is already fingered, which makes sense for a large W/L ratio. It saves you to instance very wide MOSFETs, so achieves a better aspect ratio, which is good for lo
For a single (isolated) transistor, I think the drain output impedance rd is identical to 1/gm . In practical circuits, however, transistors are never alone, so - depending on the circuit - rd can also be influenced - independently of 1/gm - by other devices connected to the other nodes of the MOSFET, e.g. by the presence of a source series (...)
Hi, Im Driving two power MOSFETs (stp36nf06) using a SG3525ANG with a gate resistor, when I measure the Gate-source voltage using the oscilloscope I get a perfect PWM of a peak-peak of 12V, but when I tried to measure the drain-source voltage I got a flat DC line at 12V with small spikes at the points its suppose to be switched off! I (...)
Hello everyone, I have one question again. I want to ESD protect an RFIC and i have to make the 2 input diodes that are gonna be connected from the input to the VDD and ground respectively. In order to make them from MOSFETS I have connected togetgher the source,gate, bulk which constitute the one terminal and the drain is (...)
It is correct to place a dummy transisitor between the drain and the source of an another transistor?(with his gate connected to vdd)
For an nmos transistor if Vdd=5v, Vin is connected to nmos transistor gate, vdd is connected to the drain and source is left floating (node V01)tell me what are Vo1 when Vin is 5V, 3V, 2.5V and 0V.
Having the drain of one transistor connected to the source of the other does NOT explain the Rdson difference. If you connect two identical transistors in that configuration they would have the same Rdson. It is the different size of the transistors that is the reason for the Rdson difference. There could be differences in Rdson with (...)
I am trying out a CMOS rectifier. I did built a bridge rectifier and it works fine. The doubt which I am getting now is, how important is the bulk connection in diode connected transistor (PMOS). Consider a PMOS with Gate-drain (GD) connected, and the bulk connected to source terminal (SB). Now the (...)
For a lamp, there's no need to drive the MOSFET in high-side configuration. At the output of 555, use a totem-pole driver which drives the IRFZ44. The IRFZ44 has its source connected to ground. One end of the lamp connects to the MOSFET drain. The other connects to +12V through an inductor. Connect a capacitor across the lamp. With just (...)
Hello everyone, I am trying to design a circuit and using a NMOS transistor as a clocked switch. The gate of the NMOS is connected to a periodic clock signal going from 0 to Vdd. This will make the drain current change periodically with the gate-to-source voltage (Vgs) and may affect other components in the circuit significantly (like (...)
I have seen a circuit that PMOS Gate,source,Bulk connected together is about 4v,the drain is another terminal about 1.4v,like below,who can tell me what function this circuit play a role seem that PMOS has been closed,and body diode is reverse biased,but it do some thing i am sure.thank
What does layout of a decap cell contain inside. how do they work . Please explain It is a simple n or p device with poly connected to VDD and source and drain connected to VSS with appropriate wells.
No, it is not possible. Shorted gate and source of an enhancement transistor will block the current through the device because the gate voltage (VGS=0) is less than the threshold voltage (conduction when VGS>VT, VT>0 for enhancement device). Enhancement load is possible only with gate and drain of the load device connected.
what is the difference between the gate-drain connected transistor or gate-source connected transistor which is supposed to act as a resistor. If your main concern is the applicability of a JFET as a controlled resistor neither drain or source are connected to the gate, (...)
i wanted to calculate the parasitic capacitance of an nfet_rf mos in Candence softwate, for which i employed the attched circuit in which the transistor is in the triode region; with drain, body and source connected to ground, while a sinosoidal input of 1.5V at gate and an inductor attached at gate to resonate with the gate capacitance (Cgs (...)
dear everybody if i have a NMOS stand alone , its drain is connected to VDD, and its source connected to gnd? how can i change Vth , and Vdsat of this NMOS ? and why ? many thank in advance
The diode is called a body diode. It is inseparable from the MOSFET by construction. A NMOS is constructed with n+ diffusion on p-sub. For discrete NFETs, the p-sub is usually connected to the source, but that still leaves a p-n junction from p-sub to drain diffusion. That's your body diode.
You should have a look at this white paper, and pay special attention to how these mosfets are connected. As You can see they connect AC at the drain of the lower leg and the source of the upper leg, when You keep RDSon in mind the drain has to have a lower voltage then the source in thi
it cannot conduct in both directions simultaneously, but it can conduct both ways as source and drain are interchangeable
NMOS FET is a voltage control switch When Vgs=0 the drain is pinched off so no current. high impedance and drain may pull up to Vcc, say if a resistor is connected drain to V+. When Vgs is large the drain switch to source is low resistance so Vds=0, even if pull up. R from (...)
I'm using Cadence with tsmc 130nm technology file ... and it's my first time ... now I'm facing a weird problem i have built a very simple circuit (an NMOS with its drain connected to the gate in series with an ideal current source between VDD and GND) I'm trying to apply the famous saturation current formula to get the process parameters (...)