482 Threads found on edaboard.com: Equivalent Diode
Dear all Electronics Engineers, Kindly I have a question which is very important for me, so pleas, pleas advice and help me... I have to repair a transceivers work in 5.8GHz and 5.4 GHz rang, I found the faulty component, it?s a surface mount diode (it has a cathode label as I draw it in the picture but it?s not that clear, and I take a
Hello, I wish to calculate the loss in the boost diode of a boost converter. I wish to do this because I want to see if it’s worth using a synchronous boost converter instead. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Here is the spec: Switching frequency = 100KHz V(in) = 2.1V V(out) = 10
im doing pk2 lite blueroomelectronics pic programmer. can any one tel me the equivalent diode for BAT 41 and in5817
Here you can find something equivalent: regards
AC equivalent circuit is used in ac analysis. For example, the MOS transistor is not linear, if we want to analyze it, we must use linear equivalent circuit . But the dc equivalent circuit and ac equivalent circuit of MOS transistor are not same. So we use them in different analysis.
hi, wat is the model, that is, equivalent model used for diode in the simulation softwares??? ex. pspice... and moreover for perfect modeling of a simple diode i came to know that there are more than dozens of parameters to be considered... is there any model existing for a diode( which is supposed to be the simplest of (...)
Does anyone know the equivalent symbol for a LED? What kind of load is it actually? MrEd
You can measure only an equivalent capacitanceof a component without knowing what exactly contributes to this capacitance. I would build a LC generator based on a couple of pnp transistors, so both the inductance and capacitance are related to GND. Now, this oscillator will generate a sine wave of certain frequency. As you add a diode (through a c
Make sure the peak current is higher than the peak current in your circuit. Assuming that the load is switched on long enough for the current to be limited by the resistance, then Imax=14V/3.2Ω≈4.4A. Choose a diode that can withstand a peak current higher than 4.4A. Next, power dissipation. This will depend on how often you turn on
A Device is said to be active if... (i) It is a source of Power in the circuit... (ii) It amplifies any voltage or current in a circuit... (iii) It acts as a switch ie., has modes equivalent to ON and OFF... e.g., transistor amplifies and can also act as a switch... SO, diode is also said to be an active device.
It doesn't occurr because of an increase in energy - that would be normal conduction. Let me see if I can explain it a different way. When the doping concentration is very high on both sides of the junction, the depletion region is very thin. In general, carriers are repelled by this barrier since they are not energetic enough to surmount it
Hello, I am feeding an input sine signal of around 10MHz into a circuit that includes a diode. The signal is fed via a 50 Ohm source, cable and PCB connector. If I want to match the impedance of the source to the circuit how do i calculate the equivalent capacitance and resistance of the diode so i can include them in the calculation (...)
Ebbers Moll model says that these 2 are equivalent..This means that while analysing their behaviour thru equations, the BJT can be replaced with this model However , when go into the internal operation , the conept of a short and long base diode creeps in . The 2 diodes in back to back give an effectively long base width and the width (...)
hi all plz give me an equivalent for hep 154 silicon diode
This seems to be an op amp made from an old bipolar technology. And, this diagram seems to be an equivalent diagram. My hunch is that they are indicating this capacitor to be a depletion capacitor as a poly-poly cap cannot be realized in this process. Did you confirm if there was indeed a diode in the layout in parallel with the cap? Or, is this
Hi, In the ESD test, for pin1 and pin2, if exert a ESD positive zap from pin1 to pin2, is it equivalent to the ESD negative ZAP from pin2 to pin1? Thanks What do you mean by equivalent?
munich1806, Test current is the current at which the zener breakdown voltage and equivalent internal impedance specifications are guaranteed. Currents higher than the test current result in slightly higher breakdown voltage and lower internal impedance. Conversly, currents lower thatn the test current result in slightly lower breakdown voltage a
consider a current source of current I=gm*Vgs and the drop on this source is Vgs then the equivalent resistance seen is R=V/I=Vgs/(gm*Vgs)=1/gm
Hello alexandr, This looks bit long description, but it is required to know about thw AWRDE environment... First of all it llooks you have not set the # of Harmonics option to required number...Just for verification once I modified to 9 it shows different spectrum results when compared to default 5 set the required relistic numbe
hi, I = Is( exp(Vd/nVT) - 1) ---------------eq.1 where I is the diode current, IS is a scale factor called the saturation current, VD is the voltage across the diode, VT is the thermal voltage, and n is the emission coefficient, also known as the ideality factor. The emission coefficient n varies from about 1 to 2 depending on th
I have a tv sharp 14lk10 and one diode of the power supply is open. In the body of it is printed SV 03 82 please if you can help with an equivalent. rgds marco antonio
hello biff sorry for the delay. i got an RPS. i tested the circuit, and its very stable. must be the diodes.i did not use the OA91 diodes. i used another germanium diode. what is the equivalent diode for OA91? what do you want me to do now? thank you very much for your support.
EDA_hg81, In order for the zener to provide its specified output, the current thru the zener must be equal to, or close to the specified test current (It). See the zener data sheet for It. Let It = the zener test current Il = the load current Vu = the unregulated voltage Vz = the regulated voltage Under load, the current Ir thru the
btw are u looking the energy band level details then get back to me, I want the actual reason of the -ve resistance in tunnel diode. I know the equivalent circuit already, but I want to know what actually happen that in -ve resistance area by increasing voltage current decreases.. (there might be holes, electrons and io
Hello, You can reduce the batteries and R's to its Thevenin equivalent. After that use the diode model you like: Ideal, Constant Voltage, Constant V and R drop or any non-linear equivalent. Hope this helps and kind regards!
* * MEASURED TRR = 36.8NS, SIMULATED TRR = 27.00NS. * * TEMP: 125 .MODEL D1N5806/125C D ( + IS = 1.82094E-8 + RS = 0.1187774 + N = 1.6444874 + TT = 2.96E-8 + CJO = 3.15091E-11 + VJ = 0.4 + M = 0.2078398 + EG = 1.11 + XTI = 3 + KF = 0 + AF =
To qoute can be seen in figure 1 that the source metallization connects both the N+ and P implantations, although the operating principle of the MOSFET only requires the source to be connected to the N+ zone. However, if it were, this would result in a floating P zone between the
Hello Frnds, I am designing a cooler circuit for Laser diode. For that an important component i.e a resistor is not available. It is a low ohmic resistor and its value is 0.068ohms. Can there be any alternative for it. Since it is a temperature dependent circuit using a wire of that much resistance will not be futile.. Kindly s
... it seems to me that deepak is asking about the on-resistance in the forward biased regions since he is asking about diode connected mosfet vs a PN diode. In such case it's necessary to stack several diodes on each other, e.g. use a stack of 6 or 7 diodes to protect against an overvoltage of, say, >5V. Each of these dio
Funny simulation. Unfortunately it's too good to be true. You may want to repeat the simulation e.g. with V1 of 10 and 20 V and also try with a real transistor. It would be less fun to reveal the result in advance. P.S.: You're right, 1N914 is a 1N4148 equivalent, a signal diode.
Dear all, what is the equivalent of BAY61 diode? can i use 1N4007 instead of it? thanks all.
I am trying to create an electrical model of a PV solar pannel. Lot of documents give the equivalent model which is composed of a current source, a diode and 2 resistors. Typical I = f(V) of a solar pannel is described as the following
Hi, Somebody can indicate a zener diode equivalent to BZX 70018? Thank you, Bruno
HI, a reverse biased diode is at the break-down voltage similar as a zener, but not the same... You can not have it at the specific (from you wished) voltages & these break-down charactaristic is a "lavina effect"_ not equivalent with a Zener stabiilizing, its practically unconrtrollable, and so very dangerous for the semiconductor. :-( K.
you can use hardwire connection for the diodes which are ON and no connection for the diodes which are OFF Added after 4 minutes: i.e. for each reconfigurable state you should replace diodes with ideal connection. If you want to be more precise, you can use the equivalent circuit model for the ON and OFF
1. You can use the simulator to calculate the average power and total absorbed energy during the oparation cycle. It would be much more precise than guessing based on a number of screenshots. 2. Some manufacturers have dynamic thermal impedance diagrams, that allow to estimate the maximum junction temperature from the total absorbed energy deter
A classical circuit is combining a zener diode and a transistor voltage follower. The basic advantage is in a much lower idle current respectively a larger input voltage range, depending on the dimensioning. The zener voltage has to be increased by Vbe of the transistor, e.g. 5.6V for 5V output. But no simple voltage regulator circuit can't work
Does anyone know how to design a simple PV module using PSPICE? I tried a current source in parallel with diode and resistor along with series resistor(cells). As I have just started using PSPICE and it is my second year in college and I am just trying to enhance my skills in this software and renewable. If anyone who has the complete deisgn modu
I have designed a SPDT switch on ADS. The problem is when taking practical results the bandwidth comes out to be only 100 MHz. But in simulation it is 500 MHz. I am using a shunt Switch configuration and using equivalent models for PIN DIDOES.Design file is attached. Kindly comment for increasing bandwidth
DVM! my mistake :( Above is a general design. I designed it wid some modifications (regarding parasitics )on ADS with some tuning and stubs. And i've used MACOM MW pin diodes which have very low C(Package)=0.16pF and Cparallel=0.61pF wid no series inductance. Problem is circuit shows 1 - 5 dB isolation in the 2.7 GHz to to 3 GHz band. And 15 dB
Hi, I have to do this exercise in preparation for my first and only exam about electronics. This is the scan of the exercise (the first with ImageShack.us and this is the scan
Could anyone explain what is the purpose of an avalanche diode connected between base and collector of NPN power transistor like in this transistor array chip STA413A? What are these transistors called? I was searching for an equivalent in Digikey, but couldn't find one si
Explain the equivalent Circuit diagram of diode connected Nmos and with formulas.
dug through old IEEE "red rag" issues from that periodThank you, going through older books did help a bit. First, from rough schematics i found, i was able to put together a memory cell as a sequential sufficient, it's too big for comfort if done n
You can get some some paramaters from I-V curve right? See the pdf attached in the link. They also have made some assumptions. I think you need to do the same. I have one suggestion: see what material & packaging your diode have. Try to find some equivalent component & use its datasheet & model as reference for you. Your problem can b
It would be easier if you had added an schematic to show the problem. Anyway, high voltages cause damage because the PN junctions with reverse polarization to disrupt, and allow a high current to pass through even though the junction should be in cut-off. Therefore, if you exceed the maximum allowed voltage chances are that the junctions will dis
You are right, UWB pulses need expensive equipment to generate and observe. In my work I prefer to use frequency spectrum before time response. Mathematically both are equivalent, so if my transmission system has an overall bandwidth of 1 or 10 GHz, I know it can transmit pulse pattern of 1.0 or 0.1 nanosecond. Our customers then sent us eye patt
1n5331 is the part I'm looking for and is the best place I can think to get them... they're out! Some other places may have them but I haven't found them yet. Does anyone know of an alternate part I could use that is more common? ---------- Post added at 10:40 ---------- Previous post was at 10:22 ----------
The device bases on kit NE 261-k. The housing was adapted Z-33, because its size fits the best. One of assumptions of this project was to make a meter that has backlighted display for work at low light and does not h
Good morning, can t find a substitute for the burned one on my ASUS 50J mainboard; there is also a burnt microcomponenet (marks unreadable), anyone can help me?. Main details of AP4835GM