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what will happen to fermilevel of Intrinsic semiconductor when we areincreasin the temp.of It ? Note :If it is in caseof impure it will move either towards or
can any body tell me how can i calculate the concentration of donar or acceptor atoms if the difference between fermi level of intrinsic semi conductor and doped semiconductor is given..
The probability for an electron to exist at an energy level is assuming there is a state in the energy level to allow an electron occupied. If there is no state at that enery level, any electron can be there stably, thus, no electron can be found there with meaningful probability. Note that the multiplication constant is deternimed by (...)
fermi level is an imaginary level which has 100% occupancy at 0K.... also it is the level which has a 50% probability of occupancy at all other temperatures....
fermi level is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. The fermi level can be defined as the level which has a 50% probability of occupation by an electron at any temperature.
What is fermi level ? How does this concept works in a semiconductor? please help i am struggling with basics...:???::???:
The term "fermi level" is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. At absolute zero the Electrons pack into the lowest available energy states and build up a "fermi sea" of electron energy states. fermi level is the surface (...)
Can anyone tell me what is the difference between fermi level and donor or acceptor level? Also I want to know whether donor or acceptor level are dependent on carrier concentration or not?
What is fermi level.How does it change from p-typeto n-type and what are temperature effects on it?
Hi, I know that in a pn junction, at equalibrium, the fermilevels in the p and n sides reach the same level, because the elcetron will flow from both sides to the other side, untill the fremi - levels become equal. Now, I want to know, as to why, at equilibrium, the fermi levels in the (...)
hi A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier fermi level in the dark.^The basic relation is general under low injection.^It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility,
now the picture u have shown is for the case of accumulation.the reason for this is simple.when u apply a negative gate voltage i.e when the gate is made negative wrt to the source then u have a case where holes will accumulate beneath the gate oxide and the surface beneath the gate oxide becomes more p type than in order to indicate t
You can think of the fermi level as the center of gravity of the amount of free charge particles. i.e. If the fermi level is in the middle, then there is a balance between the number of free charge particles in the valency band (holes) and the number of free charge particles in the conduction band (electrons). When it (...)
Hello, If we leave the gate open, the bjt's still be there. But when we bias it at higher voltage, that would change fermi-level under the gate, making hole injection from emitter easier into base region. Hence one might observe enhenced current gain...
HI.. I am confused which equations should i use to solve this question. Pls someone tell me the equations/ steps for it/final answer/assumptions made to calculate the question. A Si sample is doped with 10^16cm-3 boron atoms, and a certain number of shallow donors. The fermi level is 0.36eV above Ei at 300K. What is the donor (Nd) concentration
I'm totally new to this semiconductors. I have read a few books but when i am trying to solve the problem, i cannot understand which equations should i use. Pls tell me the equations/ final answers to these questions. Thanks Silicon atoms are added to a piece of gallium arsenic (GaAs). The Si can replace either trivalent Ga or pentavalent As ato
by saying the filling of the potential well i meant the adjustment in the energy(fermi) level such that the absorption of e emitted due to the radiation is reduced.....
what is the mechnism behind using heavy surface p+ implant to reduces the collection of dark current(just normal electron/holes) generated at si-sio2 surface? Seems this is relating to fermi level adjusting so the gene/recomb centers is filled/depeleted(a techinque used at location you dont want many gene/recomb to happen)...but I'm not so sure
The gate material makes a big difference. Check out Muller & Kamins. There are issues like surface states, pinned fermi level, etc...
In a band when fermi level crosses the intrinsic level due to application of voltage (bending) inversion takes place. A p type channel device has the fermi level below the intrinsic level. Due to application of gate voltage the band bends upward and eventually crosses the intrinsic (...)
This is a very good question. fermi level for electrons (in n-type semiconductor) and for holes (in p-type semiconductor) are different. When n-type and p-type semiconductors are making a contact (to form a p-n junction), fermi levels should become equal - that's the requirement for zero current flow (in steady-state or (...)
Hi, In the band diagram for the depletion region it is seen that the intrinsic level coincides with the fermi level in the middle of the depletion region. Does this mean that the depletion region is intrinsic at the middle? Also the fermi level is closer to the valence band edge in (...)
Sketch the energy band diagram (E versus x) including fermi level of an intrinsic semiconductor under uniform electric field in x-direction.
Sketch the energy band diagram (E versus x) including fermi level of an intrinsic semiconductor under uniform electric field in x-direction.
Hi, I have few queries regarding the below Qs. 1. How does the fermi level vary with distance under both equilibrium and non-equilibrium conditions? Is it constant or varying under equilibrium and non-equilibrium conditions? My query>> fermi level vary with temp. But I am not getting how to analyse how (...)
The ideal way to learn TCAD... First, it is very useful (I would say - it's mandatory) to know (or learn) the device physics of the device that you are planning to simulate. Learn what Ohmic contact is, doping, p-n junction, carrier lifetime, electric field, basic parameters of the semiconductor, potential, the difference between potential and vol
My hand waving description goes like this.. In molecular quantum physics, fermi levels are the same as chemical potential used in Semiconductor physics. This graph shows a simple 2 dimensional way energy level of electrons that move from a valence band across a band
... fermi potential of PMOS and NMOS What do you think of, the (minority-carrier) quasi-fermi potential or the equilibrium fermi potential? You won't find any of these in the model files. They just can be calculated for a certain point in the semiconductor under fixed circuit conditions.
Anyone having expertise in High level Synthesis? Can you please help me and others in being upto date. Thanks
So many people in that forum are interrested in tanner or calibre ... So many companies have shek|ist ... Let' share them ... Let's try to do the impossible exhaustive one, post your cheks ... Analog layout shek|ist +-+-+-+-+-+-+-+-+-+-+-+-+ Top level sheks : ----------------- Die size versus package Bonding diagram pin order Bondi
Hi all I'm gonna design an "Audio level Meter" system . I haven't worked on Audio signals. do you have any information to help me to start? any information would be usefull and it would be appreciated if you inform me about it. thanks in advance
Hi, In my project I have to monitoring 230V AC if it is disappear or it is at low level. Could any expert please give same tips? Thanks in advance! Best Regards, ltg
Hi everyone: I need the buffer IC to connect two difference voltage level device.One is altera CPLD Max3256 (3.3 Voltage),the other is Digital Input Output Card(5 Voltage). I had tried the logic IC ,such as 7404,74244,and 74245. My design works at 20MHz,AND the test result is not good. I think the current of the buffer drive IC is not high
I want to take the output of a 3.3v cpld and have it drive target devices that may have various voltage standards - (1/1.8/2.5/3.3/5 volts). The target voltage is available as an input to the circuit. The circuit needs to operate at 20 MHz. I am trying to find a Simple circuit (e.g., 1 transistor + resistors) that will do this. I've he
When Verilog/VHDL design(s) are synthesized into the gate-level netlist, how do you import the netlist into ECS schematic environment ? Because I am doing the digital design, and I use the ECS schematic to do the module interconnection. In order to integrate the whole design into the same database, I hope to translate the gate-level netlist int
Is there anybody has experience with developping cycle-level acurate C-models? Please give me some information.
Hello, I'm Intersted In Solution For level Translator For Clock Signal. It Receive Input 1.8v level From DDS, Clock Generator (After DDS Internal Comparator) Clock Frequency Options Are 2-90MHz ROutput 3.3v level (LVTTL) THANK'S FOR YOU'R HELP !
Could someone tell me how to do Gate level Simulation? Thanks
Hi all, I need module/entity level CLB counts in report produced by Leonardo Spectrum 2002. I'm using Virtex family. The hierarchy should be maintained. Can anybody tell me which option is there to do this. Under Spartan, I used write CLBs option. But it's not there for Virtex family. - asjoshi.
Hi SLS is a switch-level simulator that can be used to simulate the logical and timing behavior of digital MOS circuits. In the simulator, transistors are modeled by grounded capacitors and a switched resistor. Each node in the network has a logic state O, I or X (for unknown), and each transistor has a state on, off or undefined. Many character
Hi Transistor level Implementation of CMOS Combinational Logic 1. -> t tnx
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I built a circuit that uses a level converter max232 and now i need to cancel it due to make pcb smaller and reduce cost.I saw many circuits can work without this ic.They use classical how should i connect rs232 pins to my pic 16f628 and how should i modify my ccs c code? Thanks. Analyzer
C for System level Design -- CoWave
Here are some of my C routines for 8051. The basic idea is to make code more portable. For example I test my code under M$ Visual studio and, when code is OK, just recompile it using K*eil. (Of course under VC++ low level routines are different but interface is the same.) Hope this is helpful. Do not forget to set OSC_FREQ in timer.h Tom P
Every time when I do the gate level simulation, I get a lot of troubles such as the simulator is dead, the result is not waht I want, ..., I am wondering if my method has some problem. Any good book about the flow chart to do Gate level simulation (including the EDA tools) for ASIC and FPGA? Thaks a lot.
Hi, all. Who have the idea or experience for the sound level meter with microcontroller? I'd like to use the microphone to detect the sound level like a music. Please let me know your advices. If possible, please let me know how can I remove the noise sound other than the music like the situation when I drive the car. Thank Q for your
Hi Im using MAX1840 level translator between two controllers. But im facing some problem with default status of the translator. Data pin is always pulled high because internal 10K pull resistor of 1840. But RIN(Reset In) and CIN (CLK In) pins are always at 2 - 2.4 V. Im keeping Dvcc @ 3.3 V and Vcc @ 2.8 V. I verified if controller is driving o

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