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27 Threads found on edaboard.com: Fermi Level
what will happen to fermilevel of Intrinsic semiconductor when we areincreasin the temp.of It ? Note :If it is in caseof impure it will move either towards cond.band or val.band
can any body tell me how can i calculate the concentration of donar or acceptor atoms if the difference between fermi level of intrinsic semi conductor and doped semiconductor is given..
The probability for an electron to exist at an energy level is assuming there is a state in the energy level to allow an electron occupied. If there is no state at that enery level, any electron can be there stably, thus, no electron can be found there with meaningful probability. Note that the multiplication constant is deternimed by (...)
i need physical significant of fermi level?
fermi level is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. The fermi level can be defined as the level which has a 50% probability of occupation by an electron at any temperature.
I think u got ur 1st answer.. Now about semiconductor In semiconductor There is difference between fermi level Conduction band and valance band electron is in between Conductor and insulator.. And if add impurity in semiconductor fermi level of valance or conduction band will be change according to the doping material used.
The term "fermi level" is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. At absolute zero the Electrons pack into the lowest available energy states and build up a "fermi sea" of electron energy states. fermi level is the surface (...)
Hi, I know that in a pn junction, at equalibrium, the fermilevels in the p and n sides reach the same level, because the elcetron will flow from both sides to the other side, untill the fremi - levels become equal. Now, I want to know, as to why, at equilibrium, the fermi levels in the (...)
hi A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier fermi level in the dark.^The basic relation is general under low injection.^It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility,
now the picture u have shown is for the case of accumulation.the reason for this is simple.when u apply a negative gate voltage i.e when the gate is made negative wrt to the source then u have a case where holes will accumulate beneath the gate oxide and the surface beneath the gate oxide becomes more p type than in order to indicate t
You can think of the fermi level as the center of gravity of the amount of free charge particles. i.e. If the fermi level is in the middle, then there is a balance between the number of free charge particles in the valency band (holes) and the number of free charge particles in the conduction band (electrons). When it (...)
Hello, If we leave the gate open, the bjt's still be there. But when we bias it at higher voltage, that would change fermi-level under the gate, making hole injection from emitter easier into base region. Hence one might observe enhenced current gain...
HI.. I am confused which equations should i use to solve this question. Pls someone tell me the equations/ steps for it/final answer/assumptions made to calculate the question. A Si sample is doped with 10^16cm-3 boron atoms, and a certain number of shallow donors. The fermi level is 0.36eV above Ei at 300K. What is the donor (Nd) concentration
I'm totally new to this semiconductors. I have read a few books but when i am trying to solve the problem, i cannot understand which equations should i use. Pls tell me the equations/ final answers to these questions. Thanks Silicon atoms are added to a piece of gallium arsenic (GaAs). The Si can replace either trivalent Ga or pentavalent As ato
by saying the filling of the potential well i meant the adjustment in the energy(fermi) level such that the absorption of e emitted due to the radiation is reduced.....
what is the mechnism behind using heavy surface p+ implant to reduces the collection of dark current(just normal electron/holes) generated at si-sio2 surface? Seems this is relating to fermi level adjusting so the gene/recomb centers is filled/depeleted(a techinque used at location you dont want many gene/recomb to happen)...but I'm not so sure
The gate material makes a big difference. Check out Muller & Kamins. There are issues like surface states, pinned fermi level, etc...
In a band when fermi level crosses the intrinsic level due to application of voltage (bending) inversion takes place. A p type channel device has the fermi level below the intrinsic level. Due to application of gate voltage the band bends upward and eventually crosses the intrinsic (...)
This is a very good question. fermi level for electrons (in n-type semiconductor) and for holes (in p-type semiconductor) are different. When n-type and p-type semiconductors are making a contact (to form a p-n junction), fermi levels should become equal - that's the requirement for zero current flow (in steady-state or (...)
Hi, In the band diagram for the depletion region it is seen that the intrinsic level coincides with the fermi level in the middle of the depletion region. Does this mean that the depletion region is intrinsic at the middle? Also the fermi level is closer to the valence band edge in (...)
Sketch the energy band diagram (E versus x) including fermi level of an intrinsic semiconductor under uniform electric field in x-direction.
Sketch the energy band diagram (E versus x) including fermi level of an intrinsic semiconductor under uniform electric field in x-direction.
Hi, I have few queries regarding the below Qs. 1. How does the fermi level vary with distance under both equilibrium and non-equilibrium conditions? Is it constant or varying under equilibrium and non-equilibrium conditions? My query>> fermi level vary with temp. But I am not getting how to analyse how (...)
The ideal way to learn TCAD... First, it is very useful (I would say - it's mandatory) to know (or learn) the device physics of the device that you are planning to simulate. Learn what Ohmic contact is, doping, p-n junction, carrier lifetime, electric field, basic parameters of the semiconductor, potential, the difference between potential and vol
My hand waving description goes like this.. In molecular quantum physics, fermi levels are the same as chemical potential used in Semiconductor physics. This graph shows a simple 2 dimensional way energy level of electrons that move from a valence band across a band
Books related to: ->device physics (especially MOS sturcture,MOSFET,CMOS) ->initial-intermediate level coverage of: band theory of solids ->fermi levels, and fermi-dirac statistics or Books Similar to 1)Ben Streetman, Solid State Electronic Devices,4th Edition (Prentice Hall) 2)Robert F. Pierret, Semiconductor Device (...)
A well-known formula for the threshold volatge: V_{TH}=\Phi_{MS}+2 \Phi_{F}+ \frac{Q_{dep}}{C_{ox}} fermi potential: \Phi_{F} = \frac{kT}{q} \ln \frac{N_{Sub}}{n_{i}} Q_{dep}=\sqrt{4q \eps_{Si} |\Phi_{F}| N_{Sub}} It is not an accurate formula, but it pushes you to the right way. Usually the differe


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