Search Engine

102 Threads found on Floating Gate
I usually have a gate to source resistor to avoid gate floating. But now I want to switch high side as well, in this case, I'm bit confuse. If I use gate to source resistor or gate to ground resistor ? 137552 I think second(gate to Ground) is better, because if load is not connected, (...)
It's worth pointing out that you should also have a resistor from the gate to source or gate to ground, otherwise the gate is left floating when the switch is opened. Also, using normal battery symbology, you have the positive at the top so the diode in the MOSFET will conduct all the time! Brian.
Hello, I need small help regarding the floating gate device. I am designing a non-volatile memory cell and foundry does not have model for floating gate . So I used the Voltage controlled current source to mimic floating gate. For output characteristics, I already had the measurement of (...)
there is a chance I missed something You obviously did. The circuit can't work with floating gate input. Try: 128845
Hi, We are experiencing a drc error on one gate of a test chip. The signal goes to a MOM cap and a pimplant resistor chain and no where else. This gate signal is now being flagged as a floating gate with the drc error as PO.R.8 { @ It is prohibited for floating gate if the effective (...)
Hello! Excuse my ignorance but I was reading about Photovoltaic Generators used as FET drivers, and the implication appears to be that operation only requires an initial pulse signal to drive a FET Vth on, with the PVI driver having it's own floating voltage source to manage the FET Vgs threshold. Is this correct? It's hard for me to wrap
The datasheet specifies that there should be a minimum 10 V difference between the gate drive supply and the floating supply voltage. No, it doesn't. You misunderstand the meaning of Vs. It's the floating ground of the high side driver, usually connected to the half bridge output node.
The property is the gate capacitance during commutation. The configuration with the least accumulation of charge is (d) which has the least substrate capacitance to B or S is best for floating capacitance.
Think! The floating gate transistor relies on non-linear behaviour of the capacitors, tunneling of electrons at higher voltages. You need to model a similar behaviour in your simulation.
Two problems: 1. when U1 is turned off, the triac gate is effectively left floating. Try adding a resistor between U1.4 and L22, suggest trying 1K. 2. depending on the type of lamp, the leakage current through the snubber network may be sufficient to operate it. At 50Hz it has an impedance of ~31K so around 8mA may flow through it. If you are usin
Due to these inputs are statically set, it wouldn't make any sense in principle, but assuming that it is really what you saw and also considering that exist a science behind such an implementation, I would try a long shot to say that could be a way to minimize power consumption, or avoid leaving non-used inverter gate inputs floating.
As we know FETs have three terminals: source, gate and drain. Open source means that the source terminal is floating: it is no connected to either the GND or the VDD of the power supply. In this case you must use a pull up or pull down resistor depending on the connection. Open drain means that the drain is floating. You must use a pull up (...)
Is it a handwritten SPICE netlist, what should we check it against? There should be a circuit schematic. At first sight I notice a nonglobal floating gate node in the vcocell subcircuit, so I believe at least this circuit part won't work.
The transistor circuit that drives the gate also should connect to pin 1. Yours does not connect to pin 1. Then your connection to the gate is floating and does nothing. The transistor in an opto-isolator connects to the gate and also connects to pin 1 of the triac. How do you prevent somebody (or yourself) from being (...)
Hello there, I have designed a 3-input NAND gate by capacitor network connected to a NOT gate. this circuit functions well. recently i have found out that when inputs are stable and a noise occurs in node g, functionality of my circuit fails. this is because of node g which is floating point of my circuit. given that inputs are logical (...)
An attempt to distinguish between NVRAM and other non-volatile memories in a FRAM (ferroelectric RAM) background paper: The major difference (beside nonvolatility) between RAM and ROM type devices is the difficulty level of write-operations. Traditional nonvolatile memories derive from floating gate devices that are very difficult to write
The tunneling node will be driven to high positive or negative voltage to drive charge into the floating gate. However this schematic looks like it's missing something - there is no explicit return path for the tunneling current. I have seen other schemes where there is another electrode on the tunneling FET.
It cannot direct supply to the PMOS gate without any resistor? You probably can, depending on the control voltage source. Two points should be considred however - you don't want to leave the gate terminal floating - if you supply a higher voltage than +/- 20V between gate and source of the MOSFET, the transistor will (...)
ESD is about current but everybody talks about the voltage. Where is your current path in an all-shorted-to-GND device? Right. Now, lonely gates with a huge chunk of metal can be an antenna charging threat. But that is not ESD. An implanted resistor region makes a swell antenna diode. A floating (like poly) resistor is not going to prevent ante
Dear All, I am trying to simulate a semi-floating gate current mirror seen in fig1. How to get the graph as output, what sweep should I make? Fig 1 97141
Hi all, I want to check the floating metal and floating gate on my layout, and I use Assura tool. I red Assura Physical Verification Command Reference, it wrote ercfloatingNets and ercfloatingDevices can solve floating metal and floating gate promble. (...)
Hello...I want to chop the DC so that 585VDC into 400VDC. I dont know How to Connect the gate of IGBT w.r.t Emitter. Because Emitter here is not at zero or Grounded, Its floating. The ground of Microcontroller connection should NOT be mixed with the high voltage section. Suggest me a circuit to Trigger the IGBT in this configuration. Triggering
Pratically speaking, in your case it means that the voltage difference between pins HO and Vs, here V(HO) > V(Vs) when on, is not affected by the varying voltage at Vs (relative to ground or pin COM)... hence the word "floating" since VS can float ;) This internal floating supply is important to drive the gate of an upper N-Channel MOSFET (...)
You can almost make a (not very good) AND gate by connecting the NMOS To Vdd and PMOS to Vss. The voltages won't reach the rails and the NMOS needs to be sized to be a lot stronger than the PMOS and you end up with a 'floating' state. Keith
I'm doing layout using TSMC 65nm. I'm designing current mirror. And to increase accuracy, I wanna add two dummy gate in mirror's edge. When i run drc, it cause "floating gate" error......OTL... What should i do?
Hi to all, I would like to test a circuit in which an analog floating gate Mos is needed. I would like to know if there are some available MOS with programmable floating gate. I want to be able to program and erase the floating gate. I went through ALD inc EPAD technology, but it (...)
Hi all, How to find a floating node in the schematic where manual check is not feasible?. And also how to find the short path from VDD to VSS in the circuit?. We have tristate inverter, inwhich it has 3 states-0,1 and High impedence. Where this type of circuit is used? And whether tristate inverter output is fed to any gate? Thank
For an nmos transistor if Vdd=5v, Vin is connected to nmos transistor gate, vdd is connected to the drain and source is left floating (node V01)tell me what are Vo1 when Vin is 5V, 3V, 2.5V and 0V.
hi all; I need simulation for test slew rate of quasi floating gate OTA. How I can simulation in spice?
You probably left the gate floating. As mentioned by Brad, you need to pull the gate low. When designing circuits with MOSFETs, you should ALWAYS use a pull-down resistor from gate-to-source. Value could be between 1k to 4.7k. You'll find plenty of threads of MOSFET failure, where the solution was the pull-down resistor.
The answer is simple. You must not leave spare gate inputs floating. They need to be tied to GND or VDD. When you set the input of a CMOS inverter e.g. to VDD/2, both transistors are turned on, causing a transverse or "shoot-through" current.
Vs = High side floating supply offset voltage That’s the correct connection to control the MOSFET and this wiring change must solve the problem.
I would guess that you have left some inputs floating - that is, not connected to anything. Unused inputs must always be connected either directly to ground, or to +5V through a resistor (1K to 10K is good). Unused inputs on gates that are otherwise used, for example you have a three-input gate but only need to use two inputs, should be (...)
The issue is, "floating" can float where it pleases, later. Not old timey TTL which has its own pullup current, but CMOS for sure will drift on leakage alone, to "somewhere". Some logic families you can just hard-tie. Some more latchup prone ones want a resistor. This is all pretty old, primitive, basic stuff and unlikely to see "serious resear
Completely new to the world of FGMOS. Please refer me any good books and/or weblinks for the same.
You will always have floating gate errors till you get to the top level and connect to your IO pins. Just ignore them in lower level cells Jgk
Hello, I am using this chip for driving IGBT's. It's datasheet, High side floating supply offset voltage is 500V max. Is it possible to feed IGT's with 700Vdc, or not? I couldnt understand the effect of IGBT's supply voltage on this chip. Thanks.
If you know the 3D-geometry of the floating gate and εr of its environment, you should be able to calculate a first approximation value.
Hi all, I want to draw and simulate the floating gate MOS inverter in virtuoso Cadence 615.Please refer the Circuit diagram I am using gpdk 180nm Virtuoso this i dont find any floating gate MOS symbol
The gate Drivers should be isolated or floating from each other if using high voltages or else you will have damage parts. It looks like his design may not have this feature? Specialized gate Drivers also provide the high current necessary to turn-on/off quickly. So you wouldn't want this driven directly from a Processor. Looks like his (...)
1. No, but it's good practice to have them. 2. If everything is connected all the time, there isn't a possibility, but many times you have to rework/debug/troubleshoot, and that's when you could accidentally leave it floating. 3. If there is enough leakage in the surrounding circuit to build up a charge on the gate that the high impedance can't b
Yes. Diodes should not be floating.
With TTL devices, floating inputs behaves as logical '1' because internally has pullups resistors. Then X = 1 ==> Output = 0
so in addition to the floating gate protection this indicates an additional reason to use the gate-source resistor I adressed power-up behaviour as a possible purpose of gate pull-down resistors in the previous discussion: As far as I see, nobody has checked yet, if popu
... error though the gate terminals are connected to a pin. ERCWarning: floating gate not connected to s/d, pad, pin or resistor. ... At the gate terminal, I connected a poly to M1 contact, then VIA1, M2 Track and M2 pin ... Did you also use the MET2 pin layer?
An IGBT or IGBT module with floating gate input may be easily damaged from ESD events and also possibly go to low resistance without connecting a gate driver. If connecting a power supply with sufficient current capability, the IGBTs can be permanently damaged.
i solved this a long time ago.. by memory, i believe it had something to do with the model file's ground reference. it uses node '0' as the ground which is SYSTEM ground. you have to change this to some variable name (i used "ref") and then apply your floating power supply's reference to this pin.
If it is normal MOS with gate floating, you should use normal MOS model. I see normal MOS is used as floating gate device for EEPROM.
can I connect these two pins to the same voltage supply? You can't, if you want to keep the isolation. Unfortunately, you need a floating supply for the input side of the isolator.
I am trying to design an op-amp with rail to rail inputs and am finding an issue with the symmetric input stage trick. I am limited to a process with no floating gate and nothing fancy like triple well. I have tried two approaches, one with a simple dual (symmetric) nmos and pmos differential pair and also with a dual folded cascode approach (se