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192 Threads found on edaboard.com: Hard Switching
A few approaches are viable, such as using a resonant topology (LLC or phase shift bridge converter) or using better FET technology which mitigates the dissipation from hard switching (like GaN FETs).
hi! what is the rate of the switching losses in the all mosfet losses... i am asking this for the mosfets which working hard switching condition.... for example 60khz forward converter mosfet (dc bus voltage 310V) , hard switching and we are driving the gate in optimum speed....(to understand how much ZVS (...)
How can we eliminate dips or peaks which occur at rising or falling edges of the switching pulses?
Hello friends, Can anyone help me to get the theory of MOSFET Charachteristics & operating principle on the net. one more doubt what is hard & soft switching in the Mosfet. This i think is used for SMPS. please provide some solution(s) with details. Thanks in Advance Best Regards
All MOSFET datasheet dynamic specs are related to hard-switching, so what's the dynamic behaviour of MOSFET transistors (tdon, trise, tdoff, tfall, etc) when working a ZCS/ZVS under soft-switching conditions ? Thanks, Regnum
MOSFET switching - Turn-ON, hard switching SpringerLink - Technical Physics, Volume 51, Number 5
Resonant switching high voltage IGBT circuits are usually working below 10 kHz based on switching loss considerations, hard switching circuits in a low kHz range, just to shine a light on state-of-the-art. You didn't however tell about your switching frequency constraints, so it's hard to (...)
switching Regulator Design (SRD) is a program dedicated to support the first phase of the DC-DC converters design based on the STMicroelectronics monolithic integrated regulators. This tool is a guideline for the selection of the switchable device and of the main external components. The user is guided by a context-sensitive help and at the end
Input voltage importand for selected topology. Pushpull is best If you want to use low input voltage. hard switching technics produce more electromagnetic radiations therefore you must use soft switching type design at the audio and video circuits. If you not limited by input voltage any soft switching methode usuable.
hi what does hard-wired mean conceptually? tnx
Audio applications are also sensitive to noise application. switching regulator are hard to control noise especially in large variation in loading.
yes the switched is matched, I've already put hard wired transmission gate in the series for the switched to trigger the node to output I've use all same value of transistor size ratio.... I didn't understand what do u mean by large enough? can u please tell me... Thanks Sir.
Well, it is hard to answer this question because I really don't know where your noise is. Are you getting noise across the drain-source of your MOSFET? Do you have oscillations at the output? Stability issues? Load transients causing poor regulation? One thing you probably need to do is the make sure that you use snubbers across the switching tr
It is hard to predict by simulation, since it is mainly depends on the layout. If you can do the RC extraction of the layout. You can do a better calculation for switching loss.
You will get maximum gain if the LO signal produces hard limiting. You will get the minimum of mixing products if the LO signal produces more linear variations.
Hey guys, you helped me out several months ago with one of my problems, so I hope that you can help me with this also (it shouldn't be that hard). So I am using the chip DS2016 for some external memory in my small project. When in operation, it will be plugged into the wall, and through a converter which will give the chip 5 Volts to run on. Thi
here it is YouTube - hard Disk BLDC motor driving circuit using PIC16F876A
Take a look at tis device. Maybe it can be used for your app. ...and Maxim MAX1555 too. Although be careful, it might be a little hard to obtain in production quantities.
PIC devices are not hard to program as the actual device programming goes. IF you meant are PICs hard to use that is also no. Im pretty sure you wont be able to connect to your phone directly without either writing the code to manage the proper signalling protcol or using a seperate transceiver device. E
Hello, i'm designing a frequency converter and have some questions on it's H-bridge part. It's going to be 1-phase 230V converter, PWMed sine wave with output frequency between 0 to say 500Hz, modulation frequency about 100kHz. The high-rail potential turns out to be 325V. The power rating is not yet determined. Now, i'm planning to make the hig
Do you think this could be the problem? What kind of snubber circuit do you recomend to minimize the over voltages? It's at least a sufficient explanation for catastrophic failure, as observed. There may be other problems, too. I fear, that the bus wiring involves too much leak inductance. You're talking about snubber capacitor
todays restoration tip when reworking wafer switches / pots / tracked switching devices etc that are silver plated or are badly tarnished there is a good way to do it i found hot air and FLUX paste or ' no clean ' type is better no clean type comes as a pen for application or a brush and liquid type some pots you cant take apart and waf
Circuit switching is used in telephone networks,, when the internet was first designed (ARPANET) they tried to find a more flexible way of connecting the devices. In circuit switching each time two devices want to communicate they'll have to use signaling in what is called a call setup phase to establish a connection and then a circuit is reserve
The only way it can be made to work is if the LEDs are on when the opto-isolator LED is OFF. Then you will have to carefully select R2 and R3 to avoid blowing up the MOSFET by exceeding its maximum gate voltage and also not blowing up the opto-isolator. You will need to drive the opto LED pretty hard to get the MOSFET to turn off, depending on the
I think the spikes are a natural result of the hard switching from the switch causing a sudden flow of excess charge into and out of the capacitors. One possible solution could be to increase the size of the caps, or to ramp the switching process by putting a filter at the switch.
This is should be on the same thread as you posted yesterday, should it not? It is hard to follow if you post the same issue on multiple
I have the good fortune to be trying to simulate some "digital" circuits in a fairly old 40V bipolar technology. The only models I have are for a near-minimum transistor in Mextram form. Now I've been searching for info on how to model saturation recovery time and coming up empty. This is probably the most important, as well as most variabl
why dont you select one and lay your hand on it ?to regulate 6v-9volt input with output of 1.2-3.3v it's not that hard to regulate their are many regulators that can give more than 3Amps.
the mosfet gate turnon voltage is always in respect to its source terminal. So when the source voltage is at 4.5v and the gate is still at 3.6 it could already start turning on (logic level mosfet too ? ), so you drop the gate voltage to turn it on hard, sure it might not turn off then, no mystery there :smile: You must level shift the gate
if we take an LLC series resonant Half-bridge..... -then make the resonant capacitor very large -then make the leakage term 30 times less than the magnetising term ...then is this still a resoant smps? How small does the leakage term have to become before we say its no longer a resonant smps? And is a resonant converter that switche
I think this might be caused by the Miller capacitance (the capacitance from gate to drain). When Vgs rises, it will tend to cause the Drain to rise until the point where the device turns on hard. Try a slower rise time on Vgs to see if that minimizes the spike.
For ZCS application you can easily go up to 100khz.(for acceptable efficiency) For hard switching like motor control 20khz is upper limit for higher efficiencies. For ZVS 30khz will be fine but due the long tail current of this type ZVS is not efficient as ZCS. It is a medium speed IGBT and not HIGH SPEED.
I mean, that the question can't be exactly answered without knowing the circuit and excitation waveform. As far as I understand, there's a steady-state sine wave superimposed with a pulse transient. Assumed this is a linear circuit without a DC offset signal, then the trivial explanation is that you are too hasty and didn't wait for the initial
A state-of-the-art 13.56 MHz RF power stage would use class E/F respectively hard switching output stages rather than class B for effective operation. In the said power range, fast MOSFET as used in recent MHz SMPS designs can work. Output filters are needed to "reflect" the harmonics power back to the switcher. By the way, does your project
Assuming you are discussing a buck converter were the freewheel diode is shorted by another mosfet (as in a synchronized rectifier). In fact this is a half bridge topology with an LC low pass filter to get the DC component. When in discontinuous mode, there will be short bursts of current through mosfets and inductor, no current will flow back to
HAS ANYONE USED LM380, LM383, LM384, LM390, LM2002 ETC TO MAKE A RAIL SPLITTER ? Typical VCC can go as high as 20 to 22 vdc for some of the chips. No signal, no gain, just inputs pulled low and or tied together. I would like to drive an Nfet or IGBT +15 or less and -15 or ''more'' (positive) for hard switching. Rigging up an ISOLATED high s
Hello, I think the reason is that a series resonant topology can only transfer AC energy, so you need rectification (as you mentioned also). A buck transfers a DC component, so they are different from eachother. To be honest, I also saw most series resonanit circuits operating as inverters (so not as DC/DC converters). One of the first I saw (
I've been looking for a very low noise (less than a mV p-p) medium voltage (~100 V) variable DC supply circuit for a photodiode power supply I'm building. I found the attached circuit in an application note from Linear Technology (AN-118). It is a resonant royer converter and the author claims 100 uV of noise at a 250 V DC output. The low noise is
....the above article states that introducing an inductance into the loop containing the sepic coils and capacitor increases the efficiency. -Can this br true? -have you ever heard of making a hard switching converter more efficiency by simply shoving in an inductor? (the article says its the
Without knowing details, we should assume that the SMPS is using the expensive silicon carbide schottky device on purpose. If so, a regular ultrafast silicon rectifier can't replace it considering it's much higher switching losses. If the diode is hard switching against a transistor switch, the transistor might be considerably overloaded.
I bought FGA15N120 igbt (six peices) for making a voltage source three phase inverter. I found that its suited for soft switching.Whereas my design is for hard switching. Will this be a problem? Please help... Hi vinu gopalakrishnan Not it wouldn't be any special problem . by the way i've saw it's datasheet from fairchild semicon
400kHz may well be too fast for the 2113, the gate drive may not be up to it at these frequencies, you would need a discrete buffer between the 2113 and the fets, and a very well designed high speed, low impedance turn off gate drive (12V to 0v in <40nS) at this freq of operation. Also unless you have an inductive load allowing zero volt turn on o
Core losses can be calculated using standard data and formulae provided by most core & ferrite manufacturers, wire loss is heavily dependent on the quality and size and stranding of the litz used and is generally harder to calculate accurately. Why are you aiming for 3kW? Why are you aiming for 1MHz @ 3kW? A 1 MHz transformer design (and cons
i am working on soft switching converter. i simulated the hard switching boost converter and soft switching boost converter in psim. while measuring the efficiency ((vout*iout)/(vin*iin)) , the efficiency of hard switching converter is more than the soft switching (...)
Hello , I search N-MOSFET transistor any as IXFH12N50, for switching 150V, 4A, on frequency 13.56MHz. IXFH12N50 is goog is a good choice, but somewhat expensive and hard to reach.
Check out this for some useful info. You may need to register , but it's free. This site has lots to offer. As Gumy said , ripple current will be lower and hence capacitor dissipation will be lower. , which is good. On the negative side the inductor I2R l
My experience is that a LDMOS device standing off 20V, has better on-resistance than a standard FET stack of equivalent capability. This is, perhaps, because the LDMOS drift region is modulated to higher conductivity when "on". If your LV devices don't have a well that is independent and can be biased to (say) 17V from substrate, you are stil
MOSFETs are generally not designed with much thought invested into making their body diodes good. Therefore, the body diode will probably exhibit greater on-resistance and perhaps more Qrr (for a given voltage standoff, current rating, Vf, etc). So if the body diode is called on to conduct the entire flyback current rather than a specificall
That's quite a good design although I'm not sure hard switching the channels like that would give best channel separation. The LF VCO to do the tuning should give good frequency stability. Almost all FM receivers there is AFC to 'pull' the receiver to the transmitter frequency so absolute tuing accuracy isn't important for home use. There are two
Addingt capacitors will increase switching losses, at least for a standard (hard switching) converter.