12 Threads found on edaboard.com: Id Versus Vds
Thanks for holddreams's reply.
If vth is not equal to vth0, how should I set Vgs in spectre? is there any ideas?
Analog Circuit Design :: 25.04.2009 01:45 :: peterlau1984 :: Replies: 3 :: Views: 779
Phenomena like DIBL will lower the effective VT of
FETs in absolute terms. None of the lengths you show
are likely to see much of this in submicron technologies.
Edge effects may also be a factor, a small region at the
edge is a somewhat effective MOS structure but with some
degraded attributes from strain and oxide / interface
Analog Circuit Design :: 05.10.2009 14:38 :: dick_freebird :: Replies: 6 :: Views: 4471
How to find the I-V characteristics Id versus vds? of an NMOS transistor
How do I sweep the VGS and vds from 0 to 3V?
I am having a bit of trouble using spice, if anyone knows a good tutorial "for dummies site" please let me know...
Analog Circuit Design :: 07.02.2011 11:34 :: Qapone :: Replies: 0 :: Views: 420
here's my answer , I hope it can be helpful.
As the nmos is in the "Saturation Region" and the current source is a dc source, it means:
Id=0.5 * Un * Cox * (w/L) * (Vgs-Vth)^2 * (1+λvds)
and here ,Vgs=vds :
Id=0.5 * Un * Cox * (w/L) * (vds-Vth)^2 * (1+λvds)
the right part of the equation (...)
Analog Circuit Design :: 12.10.2011 23:52 :: alexyangfox :: Replies: 1 :: Views: 253
plot id vs. vgs in cadence
then take the derivative of the curve
Analog Circuit Design :: 16.09.2004 05:45 :: Puppet1 :: Replies: 9 :: Views: 3294
Folks, have got a very simple yet very difficult question.
How do I identify (accurately) the threshold voltage of a small-scale (l=180nm, w=100um) NMOS transistor from DC simulation? We all know that the threshold voltage is the voltage which if Vgs was higher than, current will start following in the channel and the transistor will be consider
Analog Circuit Design :: 28.11.2006 19:57 :: abuelmaatti :: Replies: 4 :: Views: 2693
If I have a diode connected NFET being biased by an ideal current source. As the temperature goes up, based square law, the vds now equal to Vgs should go up too. But my vds versus temp simulation result is actually opposite. Does anyone know why?
Also, in this configuration, how does the vdsat change over (...)
Analog Circuit Design :: 01.07.2010 15:32 :: gggould :: Replies: 2 :: Views: 573
I think he is confused.
Vsat is velocity saturation in short(0.5 to 0.25 micron) and narrow(0.18 to 0.13 micron) channel transistors. It has nothing to do with vdsat. Vsat is due to the E-field from drain acting on the electrons in the channel and source when VDD is applied to the drain. Therefore constant electron mobility no longer holds true!
Analog Circuit Design :: 14.04.2006 02:01 :: SkyHigh :: Replies: 5 :: Views: 1511
If u see the output curve between vds and Id
u can easily see that in st region , for a very small change in i/p, there will be a large change in o/p(Id) ,,this is what we require in we bias it in saturation region
Analog Circuit Design :: 18.10.2006 07:04 :: its_thepip :: Replies: 9 :: Views: 1586
It seems to assume a quadratic behaviour, so probably that is the ID vs. VGS curve, i.e. the drain current versus gate voltage curve
Electronic Elementary Questions :: 28.11.2008 03:52 :: saruman1983 :: Replies: 5 :: Views: 2927
There's obviously a misunderstanding of technical terms. In MOS literature, triode region is defined by the boundary condition vds ≤ VGS - VTH, while in saturation (or in traditional vacuum electronics terms pentode) region vds > VGS - VTH applies.
The region near the origin with resistive vds versus ID behavio
Power Electronics :: 20.09.2009 06:05 :: FvM :: Replies: 4 :: Views: 3675
"I tried to derive these on my own by writing the large signal Id (saturation) equations, and keeping the constrains (vds versus Vgs-Vt) satisfied; is this the right approach?"
This approach is not necessary.
The easy way is just to remember, for analog design ,each MOS must be in saturation region,so you need to make (...)
Analog Circuit Design :: 10.12.2010 22:33 :: chenmy :: Replies: 2 :: Views: 521