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38 Threads found on Io Pad Layout
Can any one suggest me about who to proceed with IO pad cell design... As it has large transistors of huge width and ESD protection cicuitry,, can any one help me in telling what actually inside it and how to proceed with layout of such circuitry... thanks in advance.. skyismylimit
Hello everyone, I am new to IO pad characterization and hence what should I learn first so it would be helpful in later stages. Regards sandysuhy
hi, although i've searched this site and read some discussions carefully, i still have no idea of choosing the appropriate IO pads correctly. Has some one experienced this? As I know the basic criteria of choosing the IO pad is like the follows: <1> the current passing through the IO pad including the GND/VSS <2> once the (...)
You can go to cadence website for SE information
when using a pad, the lib usually give you driving strength. such as 12mA. but in the high speed design, the calculation always use driving resistor. does anyone konws the output pad's resistor? that should have something to do with the driving strength. Bests kinysh
One more error. device DION_L130E in layout is unbound to any schematic device. and there is no diode in design. then from where this diode is coming. thanks
In our design, we don't let tools to select the IO type. you should inst. the IO type by yourself in the RTL top level. The partition should like this: rtl_core and rtl_pad. you set the IO pad don't touch during the synthesis flow. regards, In our RTL chip level simulation, IP buffer is added as a seperate module.
i also not very familar with the IO pads. rgds cheelgo
Hi Siva, I am confused. I thought IO pad design is analog, and should be designed in transistor level, and layout is custom crafted. If you are talking about logic squeeze into the pad then it is digital design, and has llittle to do with IO pad. I am interested to learn what is you job scope. Regards, Eng Han
Hi, Sould i insert metal fill at the end of my design? Can anyone give me a layout picture which includes io pad which will be taken to gds2. I need this to compare with my design. Thanx
I have a circuit that some devices terminal(D) connected to pad and they are not in I/O, now some question need you help ASAP.? thanks! 1. These device should be layouted to ESD device or normal device? 2. If these device must follow ESD rule, how i care about match issue?
It is better to get it from TSMC. Its IO cell proves good ESD and ESD under pad is very area-saving.
open the pad Cell GDS in layout viewer, then you can measure it. or see the IO pad spec. doc
Usually the IO pad cells instaintiated at the RTL level. But you can also do it in input netlist . I'm not sure if ICC have feature to do this in GUI. But If you are adding at the layout stage than formal verification is very complex as those pad cells were not in RTL but now present in layout. My recommedation is to add (...)
Problem with stopping at smbol level will be that you will not verify the core layout vs schemastic just ios. I believe calibre has chance of defining macro cells which will do the trick
IO pads could drive more capacitance. 1) I don't understand, you should simulated the RTL with IO pads. 2) ? dont understand your txt
it is OK. please pay attention to the space of design rule
Teddy: you said that just use last u mean that in the layout,do not full of the pad with each metal just as usually we do,in order to reduce the capacitive load? but i wonder that for the pad the most of the load of it is the ESD circuit,so maybe i have to make the ESD device smaller size. another question is that if i can accept
First, you can import the design into Encounter to let FE place I/O pads automatically. Second, write out the IO file using FE. Third, manually edit above IO file according to your requirement. ps: IO Filler cells do not have to be put into the io file, and can be placed later inside FE. ---------------------------------------------------
only widening metal is not enough, there is a max width, such as 30um, for a process, because of electronmigration(EM) effect. you can place some slot in metal, to avoid EM effect. if you have design rule about it, that's great!
What is pad-limited? I see this term in my I/O library. A pad in my IO library is said to be pad limited. What does this mean? I also see core-limited. What does this core-limited or pad-limited refer to? Best, B
Does any one worked on DC with insert_pads command?. It looks like obsolete in 2007.03. Any comments... By the way i want to insert io pads at netlsit level. I welcome all your inputs/examples/scripts if you can support me... i need help in jtag insertion and BSD usage. If any one worked on this, pls let me know,..New to Boundary scan inserti
What program you use? - IC Station? add io ground and vcc pads as cells.. Are you read thies manuals $MGC_HOME/shared/pdfdocs/... ?
Can anybody give me some introduce of the following IO type and the difference between these IO type: 1.DUP (device under pad) 2.CUP (circuit under (Bonding On Active Circuit) is there any document to introduce these IO type. many thanks !
Hello all, I am doing the layout of Power supply pad for VDDPST supply (I have 2 supplies VDD and VDDPST of 1.8v and 3.2v). This pad is used to supply power to the IO's. For this i have used N-type diodes and one MOSCAP (NMOS cap) as shown in the screenshot. As per my understand, # When some -ve voltage comes then NMOS is OFF (...)
Hello all, I am doing the layout of Power supply pad for VDDPST supply (I have 2 supplies VDD and VDDPST of 1.8v and 3.2v). This pad is used to supply power to the IO's. For this i have used N-type diodes and one MOSCAP (NMOS cap) as shown in the screenshot. As per my understand, # When some -ve voltage comes then NMOS is OFF (...)
Hi, I am a student working with AMS Hit-Kit V4.0 for a digital IC design. I have simulated the pre-layout netlist with NCVerilog and found the simulation was fine. But the post-layout simulation, which includes the Input and Output pads, shows the input signals fed into the INPUT pad comes out on the other side of the (...)
I dont knw abt the UMC , but for TSMC . wen you load both kind IO's into encounter. you can definitely see difference in the lef definition, Normally for a Core Io , pins are defined and wen you enable instance pin option in encounter you can see the metal pins on these core pads but not on IO pads. Br Sing
Hi, I am drawing the layout for my design using IBM 0.13um CMOS technology (virtouso). This is my first time using the IBM process so I have a few questions about the layout drawing. 1/ what is the different between pin and pad? When I insert input and output pins in my layout, the LVS can recognize them as IO Ports. (...)
Hi, If you add them at physical design step, then you'll modify the front end netlist, and it will be like an ECO. Then you will not be able to do formality between previous front end netlist (reference netlist) and post layout one. Furthermore you'll need to write/modify new constraints for these signal pads. What I see in our designs is
Hi, For "The first one is mismapped question due to additional top module which contains IO pad and my MIPS DFT result". I think you need instant all the IO pad in your RTL code manually, then you won't have mismapped problem.
IO cells form a ring around the core. IO cells are usually connected by abutment. Like filler cells for gates in the core area, there are filler IOs to fill any gap between IO cells.
Hi, I would like to know how to use the PVDD1SDG and PVDD2SDG power pads in the TSMC pad is given that the VDD1 pad is to be used for Core voltage and the VDD2 pad is to be used for IO voltage.But each of these pads have VDD: ,VSS: ,VSSPST: ,VD33 pins.How to connect the 1.8V applied to the (...)
Are pads assigned as contraints during synthesis? And if thats the case, when loading libraries into the synthesis tool, am i to assume that you would load 2 libraries, 1 for standard cell and 1 for IO? jelydonut
Use of filler cells create symmetrical metal density that is manufacturable. If we do not use filler cells, we'll land up in a non-working chip, because during fabrication, the next transistor that comes after a long distance from another of the same type, will have improper layout.
A is right as i know, SAB layer is used to block the salicide process, salicide nmos can't using for ESD protection, because it's low-resistance and bird-peak structure... i'm not sure....
hi, I have an ESD issue I can not explain. Hope to get you ESD gurus's help. Pls. see the attached diagram. This is the connection for the failed pin. The Pin did not pass the HBM 1500V for IO to IO- ESD ZAP. I can not understand why. First, I doubt the gate is damaged. But the other pins which only connected the gate with same ESD protecti
Hi For our ASIC, we have a set of core power pads that supply 1.8v to core area and another set of IO power pads that supply 3.3vto IO pads. We are able to do successful Sroute to connect std_cells VCC& GND to core power/ground nets and to the COre power pad pins. However, when I do sroute for creating (...)