41 Threads found on edaboard.com: Metal Pitch
metal pitch = metal Width + metal Space.
Second part of your question I didn't understand.
Analog IC Design and Layout :: 13.10.2006 07:28 :: Fom :: Replies: 4 :: Views: 3706
what is a metal pitch?
I have to design a Full Adder with 12 metal pitch, what does this mean to layout?
Analog IC Design and Layout :: 29.03.2012 18:41 :: W_Heisenberg :: Replies: 1 :: Views: 570
there r two types of pitches.
manufacturing pitch is the one tells u the resolution of the lithograghic chock.
layout pitch is grid what we maintain .
via 2 via pitch
via 2 metal pitch
line 2 line (...)
Analog IC Design and Layout :: 06.03.2006 09:05 :: omsi :: Replies: 4 :: Views: 1450
it is not directly related to the thiknes of the metal
Analog IC Design and Layout :: 07.12.2007 06:06 :: yashiro :: Replies: 2 :: Views: 877
The ITRS value accounts not only for a single area-to-area cap/length but for a full-around-the-wire cap/length value, this means Ctot/length = Cup/down + Cleft/right + Cfringe,corners -- and thus states a worst-worst case.
With metal_width = metal_pitch/2 and an appropriate value for metal_height = 15
Analog IC Design and Layout :: 21.10.2011 09:40 :: erikl :: Replies: 1 :: Views: 343
When seen in an LEF file for a technology,
we get width and pitch infos for metal wires,
how is this pitch siginificant to EDA tool that use it,
what for they mention in the technology file,
help me in this regard
ASIC Design Methodologies and Tools (Digital) :: 12.07.2005 01:38 :: au_sun :: Replies: 3 :: Views: 1055
If you are using the same process (i.e. it is still a M6 process, but you want to use only up to M4), then I suggest that you remove all route and then re-route everything again.
If you are switch to another technology (i.e. a M4 process), than I think you shoul d get the M4 volcano, port the placement to the new process uisng the def int
ASIC Design Methodologies and Tools (Digital) :: 20.02.2006 12:07 :: leeenghan :: Replies: 3 :: Views: 675
It is related to Encounter. This helps the place and route tool to place the cells in such a way that you don't get any DRC errors wrt to notch errors, metal to metal distance and metal area etc.. If this is not followed there is a good chance that there will be a lot of DRC errors and you would have to correct them manually.
ASIC Design Methodologies and Tools (Digital) :: 20.11.2007 14:18 :: carv_13 :: Replies: 4 :: Views: 1476
I observed the Spacing and pitch of the metal lines values in the lef file .Whats the purpose of mentioning two ?Is any one is not sufficient to Place & Route tool?
ASIC Design Methodologies and Tools (Digital) :: 18.06.2008 02:22 :: ravipati :: Replies: 4 :: Views: 1449
ya, its true the pitch is the center to center distance between two pins or two metal geometry.
Electronic Elementary Questions :: 30.09.2008 04:06 :: hiral.kotak :: Replies: 3 :: Views: 5553
Normally we leave some space for power ring around the macro. You may need to calculate the required space through applying the Power metal pitch value. The required space should be able to accommodate the 2 power routing tracks.
ASIC Design Methodologies and Tools (Digital) :: 28.06.2010 09:47 :: kumar_eee :: Replies: 4 :: Views: 1089
I am new in ASIC design and had a question..
I read that power straps are routed on top metal layers because the top layers are more conductive because of their greater thickness than bottom layers.
now my question this arrangement done deliberately and if it is... why and what if the bottom layers had more thickness and conductivity?
ASIC Design Methodologies and Tools (Digital) :: 15.02.2012 00:33 :: Simranjeet Singh :: Replies: 2 :: Views: 471
silicon ensemble uses rules described in "technology".lef. Simply look all LEFs which you read in. There is described e.g. the metal width, pitch, via rules. The rest has to be done in Silicon ensemble itself. So you need also a verilog netlist and the abstract blocks (LEF) for each primitive element used in your netlist.
I do not think silicon e
Analog IC Design and Layout :: 13.11.2004 13:26 :: moorhuhn :: Replies: 2 :: Views: 906
Top metal should be used for probe window. And the size is about 10um*10um.
Analog IC Design and Layout :: 29.05.2005 06:16 :: staric :: Replies: 9 :: Views: 1847
Generally, EM and IRdrop is considered in the power plan.
EM confine the max electricity on the metal and via, which you can find in your techonology library, .lef(Cadence), .tf(Synopsys).
IR drop confine the max voltage drop in the chip area, which you can find some clue in the cell timing library, .tlf (cadence) and .lib (synopsys). general
ASIC Design Methodologies and Tools (Digital) :: 13.06.2006 05:27 :: jackson_peng :: Replies: 6 :: Views: 1804
LEF is technology dependent file. It defines the layer, the metal width, space, pitch and via size. All std cell in lef is designed by that design rule. So you can not immigrate the lef from .25 to .18. Even if the same process with different foundaries.
But if you have technology design rule file. You can manually write the LEF file in technolog
ASIC Design Methodologies and Tools (Digital) :: 29.06.2006 00:47 :: zhustudio :: Replies: 13 :: Views: 3315
2.Define WAND State in physical Design?
3.How does Min-inserion related to skew?
4.what is scan-recording?
5.what r the need for sparecells?
6.what is VCD file?
7.Difference between Spacing and pitch?
8.Define the folloing
a) RDL, b)ECR, c)LVS, d)metal Density, e)slot, f)PVI
9.while calculating what r the ne
Analog IC Design and Layout :: 12.03.2007 08:33 :: sathi.ec :: Replies: 1 :: Views: 731
Not at all... it doesn't offend me...Actually I am imposing a question on you, may be my way is not correct... :D
Anyways, Lets talk about your issue...
Manufacturing grid is determined by the smallest geometry that a
semiconductor foundry can process. All drawn geometries during physical
design must snap to this manufacturing grid. (Minimum
Analog IC Design and Layout :: 06.03.2008 03:37 :: deh_fuhrer :: Replies: 8 :: Views: 820
Each design has IO Libraries apart from technology libraries.
Thus, for Cadence and Synopsys tool you can find IO.lef file mentioned. This file actually contains the physical information about the IO pads such as the metal layers, pitch, width, height, and obstructions.
In the same way if it is a power pad, you can find in the .librar
ASIC Design Methodologies and Tools (Digital) :: 17.03.2008 07:01 :: snr_vlsi :: Replies: 4 :: Views: 835
DRC voilations are basically related to the resolution limit of the foundary.
When ever ur fab tries to make a metal route (for that matter anything) it has its own tolerence band of accuracy... which simply defines how accurately the machine can route the metal without touching some other metal route on its side.
So to take care of (...)
ASIC Design Methodologies and Tools (Digital) :: 30.05.2008 00:42 :: ashish_chauhan :: Replies: 4 :: Views: 635
Sorry to say, but that coil-over-bolt antenna :D from the movie, hard to believe is a Helix antenna.
Helix antenna in normal-mode have a specifically spacing and pitch angle between turns (and no metal core inside).
In my opinion from how was realized, was just lucky that radiates some power in the broadcast band.
RF, Microwave, Antennas and Optics :: 08.01.2009 03:46 :: vfone :: Replies: 6 :: Views: 1174
The bulk (body) should be connected to the source. Consider
the case that you tie source to PGND and body to AGND,
and have 1V of PGND bounce. The negative PGND bounce
would stand a very bad chance of lighting up the parasitic
BJT (or maybe it, and some of its friends, latching up).
I would recommend stiff body guardrings tied hard to the
Power Electronics :: 05.02.2010 15:58 :: dick_freebird :: Replies: 1 :: Views: 1181
I'm working on a project where I need to carry a high current (at least 20amp, but preferably good for 40A under extreme, short-lived, circumstances) supply rail to a set of output mosfets, and don't really want to have to provide a wide and/or built-up trace on the board to do so.
I've stumbled upon pcb mount bus bars before, being a plain meta
Hobby Circuits and Small Projects Problems :: 07.05.2010 17:30 :: undone :: Replies: 1 :: Views: 3335
Water soluble fluxes are more aggressive, so if you don’t clean the flux residues off, it will continue to eat away the base metal, therefore it must be intelligently used and must have a good cleaning process associated with it ..
They are not banned but, I’d say, just require more carefulness ..
Electronic Elementary Questions :: 22.05.2010 07:23 :: IanP :: Replies: 7 :: Views: 1029
Usually cells are placed with power and ground rails (metal1) connected.
power and ground stripes are the power building network which hook up power and ground from the lower layer (including the power and ground rails from metal1) to the uppermost power and ground layer.
ASIC Design Methodologies and Tools (Digital) :: 29.07.2010 04:29 :: dkpang :: Replies: 4 :: Views: 1002
I need your help on routing in NanoRouter,please!
In the past few days,I spend a lot of time on routing,I found a stange scenario shown below.
In the same direction,router always skip at least one track when it routing the next wire (in the same metal),it means that at least half of tracks will not be used for routing,it results in a
ASIC Design Methodologies and Tools (Digital) :: 20.10.2010 10:23 :: david_zheng :: Replies: 2 :: Views: 554
If your process does not provide IO cells for analog and digital IO then you can make up a simple setup, but the possibility of ESD failure might be highly possible. If you dont have them available here is a starting point.
You would first need to know what size pad your bonder can bond too (pad size and pitch). I would start making your pads 10
Analog IC Design and Layout :: 14.11.2010 15:02 :: jgk2004 :: Replies: 4 :: Views: 1063
You usually use LDMOS as a switch, so you go with minimum length. Also, do note that for very low on resistance, the metal resistance may play a significant role compared to the silicon resistance.
Analog IC Design and Layout :: 18.02.2011 16:48 :: checkmate :: Replies: 9 :: Views: 2810
Technology node (180nm, 130nm, 90nm, 65nm, 45nm, 32nm, 22nm, etc.) is defined as the lowest metal (metal 1) half-pitch (i.e. metal width or metal spacing) for the DRAM version of the process.
Gate length or channel length is usually much smaller than the process node dimension (for example, in 90nm (...)
ASIC Design Methodologies and Tools (Digital) :: 01.03.2011 14:03 :: timof :: Replies: 3 :: Views: 819
there will be two lefs, one is cell lef and another is tech lef, u need to load the tech lef first then load the cell lef
tech lef contains the technology informaiton for each metal and vias
cel lef contains, physical information of each cell in the std cell libraray
for arm std cells, there is seperate download available routing tech lib,, u ne
ASIC Design Methodologies and Tools (Digital) :: 15.04.2011 07:47 :: raju3295 :: Replies: 10 :: Views: 2440
I've 2 macros in my design. One macro has 20 pins & another one has 15 pins.
Now I need to calculate the space required between the macros considering the routing resources.
How do you calculate the space?
Let say metal routing pitch is .1u and 6 metal layer process.
ASIC Design Methodologies and Tools (Digital) :: 07.11.2011 06:12 :: kumar_eee :: Replies: 2 :: Views: 891
physical library: LEF file, techno lef which contains the technology rules for the metal layers, and LEF file for all stdcell/pad/memories/macro (in general) which describe the pin positions/obstructions/antenna.
power lib are inside LIBERTY files.
noise library come from cdb files.
RC data come from nxtgrd/captable files
ASIC Design Methodologies and Tools (Digital) :: 19.12.2011 02:41 :: rca :: Replies: 7 :: Views: 1086
currently i am working in a project where i have to use a motor to spin a metal jig and in some stage of spinning i have to transfer 5v dc through the metal jig for a chemical reaction. my wire which will pass 5v dc will spine and will wear out . is there any special wire or contact we can use to avoid twisting? any suggestion?
Robotics and Automatics Forum :: 21.12.2011 16:25 :: joy123 :: Replies: 6 :: Views: 728
hello every body
i am using open cell library for 45 nm technology
i am trying to get technology information for semi global metal layer
the lef file contain 8 metal layers, i do not know which layer is considered semi global?
also if i used metal 5 layer as an example i found
TYPE ROUTING ; (...)
Analog IC Design and Layout :: 19.04.2012 13:26 :: Eman kamel :: Replies: 0 :: Views: 800
I want to conduct some area estimation using TSMC 65nm parameters such as metal width, pitch, spacing etc..
Can you tell me where I can find this info? I do have access to the synposys and cadence design tools and the technology itself.
I asked out Technician whether he has some datasheets but he didn't know.
ASIC Design Methodologies and Tools (Digital) :: 25.04.2012 12:56 :: mohSAIED :: Replies: 1 :: Views: 879
Open standard cell LEF, Get the height of cell and divide it by metal 2 pitch.
ASIC Design Methodologies and Tools (Digital) :: 03.07.2012 01:45 :: yadavvlsi :: Replies: 6 :: Views: 1045
Regarding inter-level low-k dielectric, it is the dielectric material between metal layers, here is the explanation about low-k:
ASIC Design Methodologies and Tools (Digital) :: 01.10.2012 03:31 :: soloktanjung :: Replies: 2 :: Views: 240
Explain some of the techniques to create std. cell layout without any jogs in poly, metal routings etc.
Analog IC Design and Layout :: 12.02.2013 23:49 :: Yathin P U :: Replies: 2 :: Views: 315
There are many Rules employed when the Technology is reducing.
The Rules will be ;
On Grid Errors,
metal Width/Spacing related change in rule and so on,
Thing is the details are too much, so cant enclose here.
Hope you found answer to your question.
ASIC Design Methodologies and Tools (Digital) :: 01.03.2013 02:24 :: Prashanthanilm :: Replies: 4 :: Views: 275
Please explain issues in metallization tape.
Can anyone tell what is the difference among various metallization choices such as X, Y, Z, N, R, U.
Thanks in advance
ASIC Design Methodologies and Tools (Digital) :: 28.02.2013 09:08 :: R1kky :: Replies: 7 :: Views: 294