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metal pitch = metal Width + metal Space. Second part of your question I didn't understand.
Hi, All what is a metal pitch? I have to design a Full Adder with 12 metal pitch, what does this mean to layout? thanks, all!!!!
there r two types of pitches. 1.manufacturing pitch 2.layout pitch. manufacturing pitch is the one tells u the resolution of the lithograghic chock. layout pitch is grid what we maintain . via 2 via pitch via 2 metal pitch line 2 line (...)
What is meaning of pitch of metals: like 1x pitch metal, 2x pitch metal. Is it related to thickness of metal ??? Is high pitch metals provide more current than lower pitch one???
The ITRS value accounts not only for a single area-to-area cap/length but for a full-around-the-wire cap/length value, this means Ctot/length = Cup/down + Cleft/right + Cfringe,corners -- and thus states a worst-worst case. With metal_width = metal_pitch/2 and an appropriate value for metal_height = 15
When seen in an LEF file for a technology, we get width and pitch infos for metal wires, how is this pitch siginificant to EDA tool that use it, what for they mention in the technology file, help me in this regard au_sun
Hi, If you are using the same process (i.e. it is still a M6 process, but you want to use only up to M4), then I suggest that you remove all route and then re-route everything again. If you are switch to another technology (i.e. a M4 process), than I think you shoul d get the M4 volcano, port the placement to the new process uisng the def int
It is related to Encounter. This helps the place and route tool to place the cells in such a way that you don't get any DRC errors wrt to notch errors, metal to metal distance and metal area etc.. If this is not followed there is a good chance that there will be a lot of DRC errors and you would have to correct them manually.
Hi, I observed the Spacing and pitch of the metal lines values in the lef file .Whats the purpose of mentioning two ?Is any one is not sufficient to Place & Route tool?
ya, its true the pitch is the center to center distance between two pins or two metal geometry. Thanks.. HAK..
Normally we leave some space for power ring around the macro. You may need to calculate the required space through applying the Power metal pitch value. The required space should be able to accommodate the 2 power routing tracks.
I am new in ASIC design and had a question.. I read that power straps are routed on top metal layers because the top layers are more conductive because of their greater thickness than bottom layers. now my question this arrangement done deliberately and if it is... why and what if the bottom layers had more thickness and conductivity?
silicon ensemble uses rules described in "technology".lef. Simply look all LEFs which you read in. There is described e.g. the metal width, pitch, via rules. The rest has to be done in Silicon ensemble itself. So you need also a verilog netlist and the abstract blocks (LEF) for each primitive element used in your netlist. I do not think silicon e
Top metal should be used for probe window. And the size is about 10um*10um.
Generally, EM and IRdrop is considered in the power plan. EM confine the max electricity on the metal and via, which you can find in your techonology library, .lef(Cadence), .tf(Synopsys). IR drop confine the max voltage drop in the chip area, which you can find some clue in the cell timing library, .tlf (cadence) and .lib (synopsys). general
LEF is technology dependent file. It defines the layer, the metal width, space, pitch and via size. All std cell in lef is designed by that design rule. So you can not immigrate the lef from .25 to .18. Even if the same process with different foundaries. But if you have technology design rule file. You can manually write the LEF file in technolog
Hi 1.Define Scribe-Line? 2.Define WAND State in physical Design? 3.How does Min-inserion related to skew? 4.what is scan-recording? 5.what r the need for sparecells? 6.what is VCD file? 7.Difference between Spacing and pitch? 8.Define the folloing a) RDL, b)ECR, c)LVS, d)metal Density, e)slot, f)PVI 9.while calculating what r the ne
Not at all... it doesn't offend me...Actually I am imposing a question on you, may be my way is not correct... :D Anyways, Lets talk about your issue... Manufacturing grid is determined by the smallest geometry that a semiconductor foundry can process. All drawn geometries during physical design must snap to this manufacturing grid. (Minimum
Hi, Each design has IO Libraries apart from technology libraries. Thus, for Cadence and Synopsys tool you can find IO.lef file mentioned. This file actually contains the physical information about the IO pads such as the metal layers, pitch, width, height, and obstructions. In the same way if it is a power pad, you can find in the .librar
DRC voilations are basically related to the resolution limit of the foundary. When ever ur fab tries to make a metal route (for that matter anything) it has its own tolerence band of accuracy... which simply defines how accurately the machine can route the metal without touching some other metal route on its side. So to take care of (...)
Sorry to say, but that coil-over-bolt antenna :D from the movie, hard to believe is a Helix antenna. Helix antenna in normal-mode have a specifically spacing and pitch angle between turns (and no metal core inside). In my opinion from how was realized, was just lucky that radiates some power in the broadcast band.
The bulk (body) should be connected to the source. Consider the case that you tie source to PGND and body to AGND, and have 1V of PGND bounce. The negative PGND bounce would stand a very bad chance of lighting up the parasitic BJT (or maybe it, and some of its friends, latching up). I would recommend stiff body guardrings tied hard to the
I'm working on a project where I need to carry a high current (at least 20amp, but preferably good for 40A under extreme, short-lived, circumstances) supply rail to a set of output mosfets, and don't really want to have to provide a wide and/or built-up trace on the board to do so. I've stumbled upon pcb mount bus bars before, being a plain meta
Water soluble fluxes are more aggressive, so if you don’t clean the flux residues off, it will continue to eat away the base metal, therefore it must be intelligently used and must have a good cleaning process associated with it .. They are not banned but, I’d say, just require more carefulness .. IanP :D
Usually cells are placed with power and ground rails (metal1) connected. power and ground stripes are the power building network which hook up power and ground from the lower layer (including the power and ground rails from metal1) to the uppermost power and ground layer.
Dear all, I need your help on routing in NanoRouter,please! In the past few days,I spend a lot of time on routing,I found a stange scenario shown below. In the same direction,router always skip at least one track when it routing the next wire (in the same metal),it means that at least half of tracks will not be used for routing,it results in a
If your process does not provide IO cells for analog and digital IO then you can make up a simple setup, but the possibility of ESD failure might be highly possible. If you dont have them available here is a starting point. You would first need to know what size pad your bonder can bond too (pad size and pitch). I would start making your pads 10
You usually use LDMOS as a switch, so you go with minimum length. Also, do note that for very low on resistance, the metal resistance may play a significant role compared to the silicon resistance.
Technology node (180nm, 130nm, 90nm, 65nm, 45nm, 32nm, 22nm, etc.) is defined as the lowest metal (metal 1) half-pitch (i.e. metal width or metal spacing) for the DRAM version of the process. Gate length or channel length is usually much smaller than the process node dimension (for example, in 90nm (...)
there will be two lefs, one is cell lef and another is tech lef, u need to load the tech lef first then load the cell lef tech lef contains the technology informaiton for each metal and vias cel lef contains, physical information of each cell in the std cell libraray for arm std cells, there is seperate download available routing tech lib,, u ne
I've 2 macros in my design. One macro has 20 pins & another one has 15 pins. Now I need to calculate the space required between the macros considering the routing resources. How do you calculate the space? Let say metal routing pitch is .1u and 6 metal layer process.
physical library: LEF file, techno lef which contains the technology rules for the metal layers, and LEF file for all stdcell/pad/memories/macro (in general) which describe the pin positions/obstructions/antenna. power lib are inside LIBERTY files. noise library come from cdb files. RC data come from nxtgrd/captable files
hello , currently i am working in a project where i have to use a motor to spin a metal jig and in some stage of spinning i have to transfer 5v dc through the metal jig for a chemical reaction. my wire which will pass 5v dc will spine and will wear out . is there any special wire or contact we can use to avoid twisting? any suggestion? than
hello every body i am using open cell library for 45 nm technology i am trying to get technology information for semi global metal layer the lef file contain 8 metal layers, i do not know which layer is considered semi global? also if i used metal 5 layer as an example i found LAYER metal5 TYPE ROUTING ; (...)
Hi All, I want to conduct some area estimation using TSMC 65nm parameters such as metal width, pitch, spacing etc.. Can you tell me where I can find this info? I do have access to the synposys and cadence design tools and the technology itself. I asked out Technician whether he has some datasheets but he didn't know.
Open standard cell LEF, Get the height of cell and divide it by metal 2 pitch.
Regarding inter-level low-k dielectric, it is the dielectric material between metal layers, here is the explanation about low-k:
hi, Explain some of the techniques to create std. cell layout without any jogs in poly, metal routings etc.
There are many Rules employed when the Technology is reducing. The Rules will be ; Density Related, Poly Orientation, On Grid Errors, metal Width/Spacing related change in rule and so on, Thing is the details are too much, so cant enclose here. Hope you found answer to your question.
Hi All, Please explain issues in metallization tape. Can anyone tell what is the difference among various metallization choices such as X, Y, Z, N, R, U. Thanks in advance