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60 Threads found on Mos Fet
What are fringe conductance paths in mos transistors when you use them in a current mirror ? Lets say you have a Nmos with (10/2) and ng = 4 .
I was asked that there is a nmos with Vth=1V, gate voltage Vg=3V. One end of the nmos node B (source/drain) is connected with a small capacitor (almost instantly charged), and the other end node A (source/drain) is swept from 0V to 3V. Question: How is the voltage at node B changed as node A ramping from 0V to 3V? Thanks ahead for (...)
..more than .. just a guess MARKING CODE LIST P(2) * , ** , *** , ****,_=date code,Lot No. etc. PM RTL035N03 ROHM - TUMT6 6 2.5V drive N-ch mos fet for symbol : PM - - - Upda
Hi, You could use the 9v signal to control a mos fet transistor Gate via diode into a 3 sec Res/Cap time out, the relay would be in the Drain of the mosfet. Do you follow that OK.? E EDIT: This is one option, the LTSpice sim shows the level switch Opening but the relay remains energised for ~1 second, to increase the
Hi all, I want to measure the Vt against temperature sweep graph, 1) What I dont know is how to include the V(threshold) of a an Nmos in the design as an output so that I can sweep over temperature then,. 2) Secondly, I know that Vt decreases as the temperature increase and so I expected the Id VS Vds curves should rise higher (for e.g. Id
I have a big power mos fet and Ron is about 50m ohm. The routing metal wires (metal 1/2/3/4..and via ) on the layout generate some parasitic resistance. I don't know how much the metal resistance could be. Is 5 mohm good estimation? (In my case 5 mohm is about 10% of the power fet Ron: 50mohm *10%=5 mohm) Thanks for your help!
... my question was, aren't these fet unidirectional? Can current flow from source to drain? These are mosfets, and all mosfets - due to their construction - have anti-parallel parasitic diodes, see the upper diode in their symbol's circle. So one of them is always "open" for the counter-direction current flo
There are of course some mos caps you could get, but they will go by other names. For example, fet-quad "passive" mixers are nothing but 4 zero-VT fets that are sized for ~ 1 ohm on resistance and the LO+, LO- terminals will be the two pairs of gates; the other terminals are sources / drains. You can also get discrete low- to (...)
That's how a classic DRAM memory works - capacitor storage cells with a mos transistor. Why not look at early DRAM designs? Also, sample-and-hold circuits are analogue 'memory' using capacitors and a fet to isolate them. The requirements are a low-leakage capacitor, a way to store, isolate and read your data, and probably recharge the capacitor a
As you understand flow of electron (major charge carrier in Nmos) is electrical current, basic equation of drain current in linear mode of mos is Id = W/L*Cox*mu*((Vgs-Vth)^2-(Vds^2)/2).
can any 1 tell why DC bias is required to operate mos transistor.
Hi, and thanks for the answer. The load will be small BJT or mos gate. Let say <10pF. I already found some IC solutions: - "light" low side gate driver, but it hardly reach more than 20V, - Same with some Cmos comparator. - Low and High side gate driver, any voltage but a bit slower. - the old CD4000 family (20ns under 18V) - Cmos Push (...)
hi every one i want to design a glucometer which is actually a PH sensor , using ISfet(ion sensitive fet) technology. i wanna do my simulations in COMSOL , so i read the help and could design a mos in COMSOL but in order to change a mos to an ISfet i need to change the insulator and add a membrane layer (...)
maybe power mosfet?? search STMicro or fairchild...
I think you diagram is simplyfied too much, you definitely have a energy storage on your 5V side to make the square PWM a bit "rounder". then by changing the duty-cycle of the PWM you can change the waveform that drives the gate of your mos-fet. (At 100% dutycyle you will have DC and your transformer won't work anymore) But you will never have a tr
Basically "RF models" and "Baseband models" are same mos fet. "RF models" are macro models for expressing parasitic effects which are important for RF applications. And generally special layout pcell for "RF models" are provided. However W and L of mos fets are limited for "RF models". And if (...)
hello can i use normal N-channel mos-fet instead of N-channel mos Type (π-mosVI) with the same specification (k2761 instead of 2SK3797 ) as i guess the only difference in this Zener between gate and source i read it is Improved electrostatic withstand between gate and source or should i put external zener and (...)
I think this diode will make the Nmos gate can be charged fast and discharged much slowly.
Hi All Why do BJTs have a better drive strength than Cmos transistors? Best Regards
The first 2 conditions are enough. The third one can be derived from the 2nd one. For example, in Nmos fet, the 2nd condition is Vd - Vs < Vg - Vs - Vth => Vd - Vg < -Vth. I don't know which page you got your equation from in the book. But you got the idea.
Dear All, I simulated the nmos to extract some parameters and the result was not the same as by hand calculation. Actually, I need the exact value to design the circuit by hand cal. Please have a look and suggest me the answer. Thanks in advance. Univer.
Hi all, I'm simulating intrinsic gain of a mos fet using ckt suggested in berkeley ee240 course. (ckt in the attachment) But I don't understand why using opamp here (vcvs in spice) could set the bias voltage correct..Similar bias ckt is used in another cs amplifier example (also attached). Please help~
The implant represents the well. A Pmos is fabricated in a n-well. The n-type acts as substrate to the Pmos.
You can operate mos current mirrors in subthreshold; in fact they're liable to be better, over a wider range of output voltage, if you do - running a smaller device "hotter" will raise the "knee" voltage where your mirror becomes accurate. BJTs have a wasted base current term, on the order of 2% at hFE=100 (1/100 the current into each of
Hi everyone, I'm trying to simulate a simple electric circuit using spice with a common mos insite (i.e. ZVN4424Z - SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL Dmos fet). The supplier Zetex ( ) give as the mos spice model. The question is: I'm quite sure (see in the follow) that the model doesn't consider the actual siz
For 800W output its ok an half-bridge with 2xIRFP460 mos-fet's,or STE40NK90ZD super mosfets. Don't need synchronous rectification for output.Its ok an dual 30A/200V fast recovery diode. For PMW IC its better an SG3525 IC than TL494. For schematic check diyaudio forum.You find lots of schematics there.
Hi, I need a schematic for a NEC LCD monitor model LCD223WXM-BK (22 inch) The 19 & 20 inch models may also be the same. In particular I am interested in the power board module. The monitor shows no sign of power and the mos-fet on the power board looks to be OK Any help would be appreciated. Thanks in advance, Tony.
The constant 1'b0 or 1'b1 in HDL is realized with a wire connecting to VDD or GND. That is fine until you consider the ESD issue where a gate of a mos fet is connecting directly to the power supply or ground. That's where the tie on/off gates come in. They are usually provided by the standard cell library and synthesis tool can pick them up automat
if the function of mos fet in saturation region is used: i=1/2*ucw/l*(vgs-vth)^2 which ignore the second order effect; to analyse the character of gm''(the second derivative of gm) of a simple full differential amplifier,then is the result helpful for design? or it is unreasonable? why? thx~
The final element in IGBT is not mos-fet but bipolar , so consequently has no sense to declare one.
What kind of gate drive circuit do you use ? for PWM inverters you must use a dedicated IC like IR2110, 2113 which can charge/discharge mos-fet gate very fast. if you used a simple circuit like in modified sine inverter, with just one transistor and resistor for chare/discharge, this is the result. there are other options too, like fast optocoupl
What you are asking is a very involved question..there are lots of differences between between BJT and mos, the foremost being what "darla1" said. Further, 1) in BJT there is a static power consumption due to finite Ib(base current) whereas in mos we can have a zero DC power, the reason for advent of mos in first place.. (...)
Can you clear up some thing. Are you talking about Process/technology: mos, Cmos, BiCmos, SiGe.... Or BJT's vs. fet's ? Are you assuming highest frequency to be amplified is your merit of Speed, (Frequency response of the device "S21") or How fast the device can transition from a Low to High state is your merit (...)
Hello there, I would like to make an experiment with induction heating and i have got some good components. For example i have ir2113, irfp460, tl494 etc. I found this guys article : I decided to make this fet version with ir2110 but honestly i don't have much experience about mosfets. So i'm stuck
TTL gates are made with transistors, PNP or NPN depends on the circuit involved. C-mos gates are made by mos fet transistor that work in a complete different way Try to find a basic book regarding the theory and ttechnology of transistors and you will have the answers. Mandi
see this post
It all depends upon the criteria. Jfet is the lowest noise, BJT is the next lowest. mos takes up less room on a wafer surface area and therefore is lowest cost.
Class A refers to a very linear mode of operation for an amplifier, in which current is drawn from the supply continuously. It trades efficiency for low distortion. mos stands for metal oxide semiconductor. This can refer to IC or discrete devices, generally fet (field effect transistor) based. A network analyzer connects to a system under t
you can use a mos fet as a varactor
Try this: Regards, IanP
just be curious how to choose the w and l of a mos fet example,in the pic,a larger l and smaller w campared to lower one is chosen to produce a lower common mode output voltage(hen
Open-drain outputs are outputs which at any given time are either actively sinking current (i.e., low voltage, typically considered logic 0) or are high impedance, but which never source current (high voltage, logic 1) .. Open-drain refers to the drain terminal of a mos fet transistor .. The equivalent concept on a bipolar device is called open-c
It seems that you connect the mos-fet inversed! Are they N-mos?
I think using the mos cap more than 100p is not a good way
Hi, I have a mos model that will occur breakdown when Vds>4V,which is called turn-on breakdown. If the fet in cut off region and Vds>4V, will it occur breakdown? Is the term turn-on breakdown means the fet will breakdown when it is work(Vgs>Vth)? Can anyone give me a document or describing the concepts of Turn-on Breakdown? (...)
Hello RF population, Where I can find nonlinear model for commercial dual gate mos fet types like BF996,BF998....or similar. Thank you very much for help in advance ! XTASA
In a couse material, I read author stated that mos-C integrator will suffer from variable input common mode. And it is said that R-C integrator will not. Could anyone help me explain? thanks, Neoflash
The AGC range is decided by how small the mos resistance you can obtain. So, you have to make sure your mos resistor with enough W/L and hihg/low control voltage. Added after 59 seconds: hi can someone give me some ideas on how to develop AGC?i recently,tried one but found that it
connect them serialy ,applay 380 VDC to anode and switch them on via Nmosfet. Each Led has a voltage drop which is from 1.2 - 2.4 vdc.If you connect them in serie you need to apply 200x1.2 (or 2.4) depending on the type of the led.Such a voltage you can controll with the Nmos-fet applayinf a voltage of 5V if you use the L (...)
Fabrication Steps of an fet and a BJT The fabrication steps of a pair of Metal-Oxide-Semiconductor (mos) Field Effect Transistor (fet) and a Bipolar Junction Transistor (BJT) on a Silicon wafer is illustrated in this applet. The four buttons, 'first', 'previous', 'next', and 'last' let you view the static images at various points of the (...)