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33 Threads found on Mosfet Saturation Voltage
Hello. I just want to know whether we can refer bias voltage to mosfet operating in the triode region.. I've thought bias voltage means making mosfet operate in the saturation region. Thank you.
A mosfet designed for the intended current has Rdson in the milliohm range...
Maybe you are thinking about an ordinary transistor saturation and linear. A mosfet is the opposite: 1) It is turned on hard like a switch when it is a linear resistor. 2) It is an amplifier with plenty of drain to source voltage when it is saturated.
i have some question please answer it. 1) Due to velocity saturation When mosfet reaches to its saturation i mean Before Pinch OFF or After PInch off,OR at Q point 2)which system uses DC to DC high voltage gain Solar system or battery backup system
How to understand how power MOS help maintain output voltage of LDO while it works in saturation region? Thanks. Can you build a CS amplifier that his drain voltage (VD) is equal to 0.5Vdd or 2/3Vdd ?? In which region mosfet is operating? In saturation ? So how it is possible if MOS work as a VCCS? Also (...)
Most people are confused with "saturated" and "active" regions for a mosfet because they are the opposite to a bipolar transistor. Power= the voltage across it times the current flowing in it. When a mosfet is fully turned on it has high current but almost no voltage then its power dissipation is very low. When a (...)
In saturation MOS has a "voltage drop" D-S that is greater than Vgs. This is certainly not the case. Perhaps you are confusing it with BJT saturation which is sort of the opposite. What you believe about mosfet on-resistance can easily be put false by realities of packaging and PCB design. 20mOhms pad-pad on the die (...)
maybe the following current formula of transistor explain this: 99947 this is the formula when mosfet try to operate in linear mode and move to saturation. for lower threshold voltage, the induced driving current increase faster than those with higher vt. I think that it's the reason why the low threshold has better perform
It seems like mosfet is in linear mode rather than on saturation mode. As expectable with the shown driver circuit. Driver voltage must be at least 6V above Vin to switch the mosfet fully on, needing an additional supply and stressing the mosfet driver up to the maximum rating.
I do not know about simulation but any amplifier device including a mosfet must be biased to amplify. If you rather use the mosfet to switch on/off, saturation setting can be useful for a good efficiency. Low-level signal amplifier is usually biased in the "linear" response region; high-level amplification calls for (...)
I wonder why it's necessary to use 200 or even 500 kHz for LED dimming? Apart form the many right things that have been already said about mosfet's versus BJT for fast switching, there's another rather simple point. BJT need to be operated with sufficient base current to achieve low saturation voltage. Do you know where you get the base (...)
In saturation the mosfet acts as a voltage controlled current source.We get around the nonlinear relation to obtain linear amplification. By dc Biasing we make mosfet operate at a certain VGS and ID & then superimpose the signal to be amplified vgs on the dc bias VGS.Keeping the signal vgs small changes in iD almos
i want to switch load of 2amp (GSM modem) can any one advice any mosfet to use, preferably smd one. for some reason gsm modem is not responding to off key so i have to cut its power supply. i am using 3.3v pic and gsm modem needs about 4.2v thanks
could any tell me how to find the early voltage of a mosfet using spctre simulation tool, It would be really grt if you could suggest the steps rather than telling me the equations (plenty of suggestions are there just giving the equations, already posted ) thanks in advance
I read that in an n-mosfet, when drain voltage is increased above threshold (in saturation mode) the inversion channel between the source and drain is pinched-off near the drain region. so the channel length decreases and so its resistance. so larger current flows through the channel. My doubt is, when a smaller portion is pinched off near (...)
I JUST NEED TO MAINTAIN THE OUTPUT voltage AT 24V Circuit diagram of the proposed system Figure 10 shows that power stage included switch SW where it may consists of one or more parallel connected power mosfet, a fast switching type flyback diode D, an inductor L wound onferrite core with air gap to prevent core saturation, and output (...)
Read this to understand what is cut-off, linear and saturation regions of the mosfet: Now, changing in small limits the Vbias can change the output level. This you should do before asking any questi
1) check the Vce (emitter-collector saturation voltage) and compare that to the Rds-on (drain-source resistance when on) of a mosfet, calculate the power loss for the same current 2)Compare the Rds-on of P mosfet with the Rds-on of N mosfet Alex
mosfet have ohmic region while bjt doesn't. Hence mosfets i/p is voltage controlled while bjt i/p is current controlled.
When I connect a 20 V to the gate of Pmosfet and 1.5V at Source i get only 0.7V at Drain . Rds(on) = 9mohms .Why this happens?
how can calculat ring type puls tranformer for gate drive (mosfet or igbt)
Hi, The electronic load shown in attached image is constructed using a power mosfet Q1 (IRF540). Let's say the opamp MAX480 is powered by a 9V battery, thus the maximum output voltage of the opamp should be no more than 9V. If the load current is 10A, the voltage drop across the R10 resistor is 0.1x10=1.0V. If it's a 12V load, then the (...)
P1dB is measured at output and not at input? P1dB - at output measured - should be proportional to P-DC. If this is not the case your mosfet goes into voltage saturation or current saturation and not both simultaneously. This is due to output mismatch.
You should check the transistor datasheets. 1.1 - 1.3V is a usual Vcesat value for darlington transistors. For low voltage drop, use mosfet.
Using an IGBT to control a 24V motor isn't a good idea, efficiency will be poor due to high saturation voltage. Up to 100 V supply voltage, use mosfet instead.
The primary issue for a current source is its fidelity to the master reference current. You have a Vds dependence inherent to the mosfet, from both the transition between linear and saturation and from short channel effects. Headroom goes more to the former. If the reference device is a simple VDS=VGS MOS diode, then the current source wi
i am using hitkit ams 0.35u foundry support in cadence. so, if i am taking a mosfet from library then how can i find that mosfet's threshold voltage. please help me thanks in advance
I've seen this couple of times in nm processes. I plot the ID-VDS curve and then extrapolate line when the mosfet is at saturation but the line does not converge at a single point (early voltage). Does anybody know the reason why this is happening? Does early effect apply in nm process technology? Thanks.
Dear all, The question is "What is the physical meaning of gm when mosfet operating in saturation?" I answered "Transcoductance gm reflects the change in the drain current divided by the change in the gate-source voltage. It represents the sensitivity of the device." But it seems not completed from the interview feedback. Any (...)
hi, biasing is very important for mosfets so as to ensure that they work in the region of interest, usually saturation. in saturation we get faithful amplification of the signal. for biasing of mosfets you can use 1> voltage source at the gate and/or a resistor at the source of the (...)
as far as i thought ,,body effects makes the threshold voltage of mosfet changes,,,so,,you must care when placing the mosfets in series that they still operate in saturation region and this depend to a great extend on the supply voltage ;as it shrinks down ,placing mosfets in series becomes (...)
Hi~~ When mosfet works in the saturation region, it works like a current source. Then, if you add some resistor to a drain, then, the voltage drop will appear at the drain. If you apply some AC signal as well as a DC level to the gate, the AC component of the drain voltage will appear larger than the AC component of the (...)
in my knowledge, ICMR is input common mode voltage range that is required to sustain saturation region for all mosfet. several books say that ICMR is an important parameter when someone design differential amp. but, why?? just sustain saturation region? is there anyone who explain me in detail? thanks