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Nmos And Pmos Characteristics

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23 Threads found on edaboard.com: Nmos And Pmos Characteristics
Hi In cmos circuit If we replace nmose with pmos and pmos with nmos then what will happen??
Well width and length does not matter in this case and you can never go beyond Vdd-Vtn. You need to understand the working of nmos and various regions it can work in. For nmos to pass current and act as switch, a minimum difference in voltage of Vtn should exist between gate (...)
Native mos if formed directly in the substrate. Although it may be nmos, but it has different characteristic with normal nmos. The threshold voltage is very low, and sometimes will be negative. Lack of channel doping makes the native mos have better noise characterisic than normal nmos and pmos.
In cmos design, we always use the diode connected nmos and pmos transistors. Why it is called diode conected? Is it because its I-V characteristics like a diode connected bipolar one?I can not see a diode structure from the view of process. Another question is about the diode in standard cmos process. I (...)
In cmos design, we always use the diode connected nmos and pmos transistors. Why it is called diode conected? Is it because its I-V characteristics like a diode connected bipolar one?I can not see a diode structure from the view of process. Another question is about the diode in standard cmos process. (...)
If I understand correctly, you are using descrete nmos and pmos to build up an OPAMP.There should be characteristics like saturation, Nonsaturation, inversion etc. There is nothing like it? Can you upload a page of the datasheet or put the code of the device in order to look it up? D.
Here are some Questions......... Explain why & how a MOSFET works Draw Vds-Ids curve for a MOSFET. Now, show how this curve changes (a) with increasing Vgs (b) with increasing transistor width (c) considering Channel Length Modulation Explain the various MOSFET Capacitances & their significance Draw a CMOS Inverter. Explain its
In fact, both pmos and nmos include many aspects for characteristic, such as Vt, mobility, capacitances, on-resistance and so on. For different aspects, different methods are needed for monitoring. In most cases, foundries will have test keys in scribe line for process monitoring.
Hi all, Can anybody help me with the options in Trans/DC/XF/etc form fields such that i can get the same results/waveform characteristics with Cadence ADE L as that for the HSPICE code given in the attachment?Details are in the attached pdf in the zip form. I am using Cadence IC 6.1.4 and ADE L,Virtuoso.What i am face problem is to fill the a
Hi everyone, how can i change cgd capcitance of nmos or pmos im design PA and i need to study the effect of miller effect, how can i change cgd to be equal zero or any another value i want . thank you for help
Use it like an independent pmos, i.e. ignore its gate connection to the nmos gate. Sweep the (negative) drain voltage with Vgs as parameter, and measure the drain current.
First of all your schematic is wrong. You should mirror 2 nmos an resistor of current reference. The nmos of start up circuit should very long-channel transistor, the W/L of this transistor is defined by specs on Icc of this current reference (especially for highest Vcc value). W/L start up pmos transistors is not so important.
This circuit works as a comparator. Consider the branch with Vinp. If Vinp increases, then the current through the pmos differential pair at that end decreases. Hence, the Vds drop on its active nmos load decreases. For a moment consider that load to be a resistor because of the rds being modeled as a resistor. When the current is decreasing, then,
do you mean to use a MOS transistor as a capacitor? if yes. it is simple, just tie drain and source together and body to GND or VDD for nmos or pmos. then you'll have a capacitor between gate and drain-source (tied together). take care in this configuration source and drain voltages should (...)
please explain me how to do DC analysis for the attached circuit.... note that... both are nmos
When I replace my pmos with a 1. low resistance 2. high resistance in a an inverter and apply vin (0 to Vdd) to nmos how does the out put look like? Where does my Vout stand when Vin is 0. Does it stand at Vdd even when I have very high resistance?
I mentioned the threshold voltages to be 1V and Vg of pmos is 3V and that of nmos is 1.5V ... ---------- Post added at 18:58 ---------- Previous post was at 18:57 ---------- Or putting it the other way, how to identify the states of the transistors and how to find Vo ??
You should use the nmos/pmos model from breakout library. These models would have all parameter set to default simulator value. Now you can either define the various model parameter for these devices. The model parameter are provided by foundry and these are function of process node.
One of the biggest. You could simulate your regular working analog CMOS circuit is you modify each bulk. For pmos and for nmos make an additional series RC network. That mimic the floating body. But negleate the intercoupling. So you now that about 20-30% of the gate charge is put into substrate. Now also the sereis RC network react by (...)
Hi, pls. take a look at the attached PDF file. It is the datasheet of the class-d amplifier from TI. I have one puzzles on the page 3, the electrical characteristics table, the yellow part. It defined the Rds(on), the static drain-source on resistance. It should be the adding of the rds of pmos and nmos (...)
the transition time of inverter is related to the W/L ratio between pmos and nmos,VDD and the load capacitors. Trise≈2C/(Kn*VDD) Tfall≈2C/(Kp*VDD) we can come to the conclusion that Triseand Tfall,to set Wp=βn/βp*Wn is the best choice. It's (...)
Hi, If your circuit is on P-sub,then all the substrate port of nmos should be connected to GND to decrease the bias current between P-sub and N-Well,and since pmos is set in N-well,mostly the substrate port can connected to Vdd,and the can also be connected to source of pmos to eliminate the (...)
@rp276: The switching threshold, Vm, is defined as the point where Vin = Vout. Switching threshold can be set by the ratio of relative driving strengths of the pmos and nmos transistors. To move Vm upwards, a larger value of ratio is required, which means making the pmos wider. Increasing the strength of the (...)