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they won't work.... Vgs needs to have a certain positive value for the nmos to work...and if the transistor drain is connected to Vdd and its source is connected to the output, then the voltage on the source is unknown and the value of Vgs isn't necessarily the voltage needed for the correct operation of the it won't work :) same
The right one (nmos with 2 fingers, too) is the better layout: less input gate series resistance, less parasitic output capacitance, and saves real estate area.
Hello, well V(OL) is equal Vm, that region where both Pmos and nmos are in Saturation.. if you want to find Vm simple draw the schematic of an inverter with ratio PUN/PDN= 2:1 PLot do the DC analysis(sweep the input voltages)... the point where both input and output intersects is the VM its is usually taken as VDD/2. i.e if VDD = 5v than V
Why does a CMOS inverter go down to gnd voltage but a nmos inverter
You can refer to layout example in Jan Rabaey, "Digital Integrated Circuits 2nd Edition" Neil Weste, "CMOS VLSI Design A Circuits and Systems Perspective (3rd Edition)" Neil Weste, "Principles of CMOS VLSI Design" Baker, "CMOS Circuit Design, layout, and Simulation" You can use tools like LASI, Microwind, Cadence, or other ED
Hallo and help me please...:cry: i have to make a layout of two stage amplifier and i use technology -TECH_C35B4- but i have some problem because when i go to extract the schematic from my layout i get the same problems: net_psub net_subtap:Causes multiple stamped connection net_psub net_subtap:has multiple stamped connection I have conne
Hi, Our ciruit used a big inveretr as buffer to drive a ~10pF load cap to CMOS level. The working frequency is 155Mbps.The size of the inveretr is for PMOS 12/0.6,m=40 and for nmos,it is 12/0.6mm=20. The process is 0.6um CMOS. We feel puzzled for how to draw it in layout. There are two main problems. One is how to place the input and output
Hi, I am layout the output buffer whcih drive a ~10pF load cap at 80MHz. The output buffer size is for PMOS 12/0.6,m=40 and for nmos,it is 12/0.6, m=20. The max size of the W in my process is limited to Wmax=20. Anyone can see any risk for selction the multiple number is high to 40 for PMOS and 20 for nmos? Thanks in adavnce for (...)
In a depletion-mode nmos the channel area is doped so that the channel exists even with no (positive) applied Vgs. Thus, the threshold of a depletion-mode is typically negative. The short-circuit between Gate and Source (i.e. Vgs=0) ensures that the transistor is always on since: VT<0,Vgs=0 -VT>0,Vgs=0 Vgs-VT>0
Hi All, I am using this book: Basic CMOS Cell Design by Etienne Sicard. I'm trying to simulate everything for better understanding. At page 96, Section 4.3 there is an introduction to the "inverter layout". My question is about this: p-channel MOS switches half the current of the n-channel MOS. I understand the reason: let's sa
hey, Can somebody help me out in developing a skill script by which i can increase the width of nmos by 10% and decrease the width of the pmos by 10% in the layout??
Is it possible to have inverter with nmos enhancement as load and its gate and source shortted and driver is also nmos enhancement ?
hello all, I am having a problem in layout design in tanner EDA. In my schematic design body terminal of all nmos are connected to their source terminal so in the layout design i have to isolated them and for the isolation i need deep n-well or p-well but there is no such layer in L-EDIT of tanner EDA .can any body tell me how to add (...)
a nmos inverter consists of a nmos transistor with a resistor attached to Vdd (by drain). a pmos inverter has an pmos transistor and a resistor to ground. the common used inverter is the cmos inverter with both the nmos and the pmos transistor.
Hi, I have trouble simulating even an interter extraction. I tried to use various means, including a config view, modification from the setup environment menu, the output is incorrect. I applied a Vpulse at the input and the ouput just tracks the input exactly (when Voltage 1 of the Vpulse is 0V); if the Voltage1 of the Vpulse is 3.3V then the ou
Hi, The story begins here : I'd like to simulate an inverter layout. The design has been created with Cadence Virtuoso. I've checked it with Calibre DRC. The technology used is ST CMOS090. In order to validate this final step, I need to run a post-layout simulation (PLS). I use the PLS kit installed with the design kit. When I click on [i
I am just wondering why in many standard cell library in an inverter layout the gate is not straight rather like a snake. What is the advantage of this structure???
hii.... Im a beginner with Analog layout but i have some basics on layout like ( Stick Diagram, designs rules, passive elemnts layout......) but its only a background and i know analog layout is really tough. I have Art of Analog layout (second edition-Alan Hasting) and i knew its a nice book and i have (...)
I'm using AMS hit kit. Technology is c35b4. I draw a simple inverter. And try to do drc. And there are errors in divaDRC.rul "Error=Duolicate layer net allowed. The results will not be as expected. 264: net_poly1=geo0r(poly1_cut poly1_cut) What does this mean and I correct it..
i am working on sklansky adders now as as a part of my maters it possible to layout a sklansky adder without having to write verilog code adviser told me to look at the sklansky adder in weste and harris text book and asked me to make a layout. The point is to size the gray cell which whose out
Hi, The easiest way is to open Virtuoso from Composer window. Tools-> Design Synthesis -> layout XL. Then from layout XL got to Design -> Gen from source. Lets say you have an inverter in the Schematic window. After you do Gen from source it will place 1 nmos and 1 PMOS and all i/o pins. Press shift f to get the (...)
hi I am making a single-phase inverter with a dc-dc boost converter for my project and with an aim to make it to 1 kw rating and 230 V, 50Hz rms using dc power supply in the lab with 175V and 10A supply. I followed guidelines given in 6N136, IR2110 and AN-978 , DT97-3 datasheets and kept Rgon=15 Ω and Rgoff=8.2Ω using anti-parallel
Hai, I want to make the layout of a delay element. So first i made the layout of an inverter. And i used the symbol in the schematic of delay element and from that i generated the layout. Next i want to do some optimization using hierarchy. For example i wanted to make the nwell common for all pmos transistors and use (...)
63760 Construct the RC switch model for the nmos transistor layout in Figure. The power supply voltage is 3V and the dimensions are in units of microns, and parameters of the nmos are Vtn = 0.6V , kn = 150μA/V2, Cox = 2.70fF/μm2, Cja = 0.86fF/μm2, 入 = 0.5μm and Cjp = 0.24fF/μm
Hi i am very new to the cadence virtuoso layouts . I am trying to make a 6T SRAM layout . The schematic has two coupled inverters . I have recently added the Nangate 45nm layout in which it has already a inverter layout, so i am trying to use the create instance icon to place the (...)
Hi, I am using Assura RCX to carry out parasitic extraction of an inverter layout. Cadence icfb version I am using is IC5141USR1. The tool is extracting the layout successfully, but the extracted view shows nmos and PMOS symbols in place of metal layers. Parasitics (resistors and capacitors) symbols are present in the (...)
Actually this error message is rather self-explaining: you need a p+ diffusion area ("Psub tap") close (<= 10.0 um) to the n+ source (and drain) areas of the nmos. Connect this Psub tap via contact and metal_1 to GND (like your nmos source, probably). See e.g. this inverter layout from a Cādence tutorial: 97294
Can someone explain to me or show me a circuit where AND and NAND can be made using only with nmos rather than with pMOS and nmos. I think if one of those is inverted then we could get the other and nmos inverter is easy.
I use hspice first time. I make a PMOS and a nmos inverter circuit. The PMOS's gate is connected to a clock and nmos connect to a sinewave. So that the output should also be a sinewave which is verified by Cadence. But in Hspice, I find that the output is just a constant voltage with value 2.3V. I feel strange so that I ask help here. The (...)
I wanna get such an EDA tool: 1) Input circuit schematic (such as pmos,nmos, inverter etc.), save these schematic and generate spice netlist. I hope the user interface and bindkey is similar with Cadence Schematic Composer. 2) It is free and the install file is small. 3) OS can be window or Linux. Thanks for your recommendation!
hello everybody i'm deepa...i need help from the people who know about MYCAD tool..and also i have some doubt in that tool..can u clarify that? while drawing layout what grid size i have to this default one or will be changed based on grid size common for all trechnologies lik .5um,.35um etc. or will be changed..als
I did a simple inverter layout & run Calibre LVS here is the LVS extraction report ############################################################# ## ## ## C A L I B R E S Y S T E M ## ##
Hi gurus, I am trying to do a simple inverter layout, when i run DRC i am bugged by this DRC error of Info: hot nwell. vdd! is labelled on to the M1, so thats not the mistake i have done ! I dont have any clue absolutely how to solve, Any help is highly appreciated. Regards, santini
I am using IBM cmrf6sf 3 metal technology for the layout. When doing assura floating gate check for my complete circuit, there are lots of errors as: GR908, There are floating AM//ML/MA of pads. GR131: There are metal/(gate+15*tie-down)>200 areas at AM/ML level. GR131: There are metal/(gate+15*tie-down)>200 areas at MT level. GR131a:There are f
Dear all users I need help regarding how to design CMOS inverter or nmos inverter or other designs in the orcad pspice software. Can any body provide steps to design cmos inverter. Kindly help i am not known about this software.
Hi, I am designing a SAR ADC. I designed a MOM-cap for unit capacitor of DAC by myself which is not provided by foundry. I have created a symbol and layout view of capacitor and in an example schematic connect the cap symbol to an inverter and in layout connect inverter layout to the cap (...)
hello i'm trying to make an H-brige to control a car with a arduino in order to avoid having to drive the top N-fets i replaced them by P-Fets (M5 and M6) , and used a nmos inverter to invert the signal (M1 and with I
Hi, I already installed the IBM 90n 9LP design kit from MOSIS and designed an inverter layout to test DRC and LVS checking before starting use this DK. During LVS running the following error ocurred: ERROR (AVVSI-10001): Input layout is incomplete. If you still want to continue the run, remove undefined placements from the (...)
i encounter this error PP/NP overlaps OD >= 0.25 and N-well PICK-UP to PMOS max space < 20um i am only doing a inverter layout hope you help me. i am new to this software ( virtuoso
the job 'hercules_drc_25' started on host 'localhost' with processid 8498 fialed to start or complete successfully ; the job return code is 34 i'm designing an inverter layout and when i run DRC an error like that occur. plz help me!
When I run PEX in Calibre I have a fatal error: Rules file must contain a CAPACITANCE ORDER statement. I'm a beginner and I need the PEX of an inverter layout! Thank you
I think this isolated nmos is a conventional nmos in a P-Well (bulk connected to Vss), but that P-Well is inside an NWell. This N Well should be connected to Vcc. This means that any noise from the P-Substrate (the normal bulk for non isolated nmos devices) cannot get to the isolated P-Well as there is a reverse biased PN Diode. [url=images
LAT.3N P-well pickup OD to nmos space > 30 um Connect substrate to GND to do that put M1_SUB in the blank spaces and connect them to GND with metal 1. LAT.3P N-well pickup OD to PMOS space > 30 um Connect N-WELL of PMOS to its source to do this put M1_NWELL and connect to its PMOS's source (or VDD). Put M1_SUB contacts as many as po
If we swap the Pmos & nmos in a cmos inverter, will it function as a noninverting buffer?
i'am a beginner in layout i need help in 1.6u tech for layout on cadence vituosou ...i know how 2 use the tool but not the design i need 2 design simple nmos and pmos cells first give me material on different layers etc and on the tech files i need to consider for DRC.....a fast tutorial on layout
No, it will work as a buffer after interchanging nmos and pmos. But still the operation wouldnt be rail to rail as the nmos transmits a weak '1' and pmos transmits a weak '0'.
Hello, I have an question about the ESD. The picture I've attached is an ESD protection circuit for digital output. I've used this pad but I wanna change the circled nmos size of output inverter at this time because I need to drive more current than before. The problem I've encountered is this: increasing W or decreasing L. Which method i
what is the process that the L of nmos can be 200u ?
1. What is layout rules to design power switching nmos and PMOS transistors on chip, if its currents are more than one ampere? 2. What is noise isolation methods of control circuit from power transistors?
I have a question to lay, because I don't know how full custom EDA tools recognise devices... when I design a inverter or a nmos layout, how IC cadence system recognise that my layout is a inverter or a nmos and how IC tool assign device characteristics, parassitic parameters, etc... (...)