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Parasitic Bipolar Transistor

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12 Threads found on edaboard.com: Parasitic Bipolar Transistor
On what makes the parasitic NPN stay dormant.
in the cmos there are intrinsic bipolar bjts. if you check the diagram of the cmos with n well you can see that the source and drain of the pmos is p+ and the well is n. and the substrate/body is ptype. so it can work as a pnp transistor. similarly there are other intrinsic bjt's. these are called parasitic transistors as (...)
Hello jamaleddin mollasalman, by accident, I was also trying to ask the same question. I already finished the design of many band gap reference voltage and current based on the parasitic bipolar transistor introduced by the CMOS technology. the only problem of this design is they have large area occupied by the bipolar (...)
A byproduct of the Bulk CMOS structure is a pair of parasitic bipolar transistors. The collector of each BJT is connected to the base of the other transistor in a positive feedback structure. A phenomenon called latchup can occur when (1) both BJT's conduct, creating a low resistance path between Vdd and GND and (2) the (...)
I suggest you select & "q" (property edit) the extra terminal and see what its name is. It could be the substrate node in a JI process, in which case you have parasitic diodes and caps that need representing.
C4 & C5 should be compensation cap as it increases output parasitic cap. Same as two stage Op-Amp, with compensation cap connected from 1st stage output to the output stage. Two caps coz' there are two pre-driver stage.
Which are the most parasitic bipolar transistors used in CMOS technology?, vertical or lateral? and why? Which are the advantages of lateral?, and which are the advantages of vertical? if you have papers, books about this topic, please upload thanks
who have it A. Amerasckera, M-C. Chang, C. Duvvury and S. Ramaswamy, ?Modeling MOS Snapback and parasitic bipolar Action for Circuit-Level-ESD and High-Current simulations?, in Proc 34th IRPS, pp. 318-326, 1996.
Generally yes. Think of operational amplifiers. When the gain is reduced by the feedback resistors the 3 dB bandwidth increases. For the case of single transistor amplifiers the product declines with lower gains. This is due to the parasitic resistances staying constant. For bipolar amplifiers, using emitter resistor feedback will (...)
in CMOS process , bipolar is parasitic device and model not accuracy but we usuall use it "diode" fucntion for bandgap .. so it is ok for design in really bipolar like episil Fab have really bipolar spice model but build spice model is difficult .. and many book talk abut MOS , BSIM model but little book (...)
I read IEEE paper about CMOS voltage reference. It was based on difference of PMOS and NMOS threshold voltage temperature coefficients. But I don't think it will be easier than bandgap. Any CMOS process has parasitic bipolar transistor, so no problem to design bandgap. It is well known circuit. Even if you don't have a BJT model you can (...)
Hi, I've had quite a bit of experience with mosfets; is this the DMOS or LDMOS? If the latter, then there's probably a parasitic bipolar transistor intrisic to the device and you may have missed the oscillation on the SA. If you have a curve tracer you can determine if this is the case by looking at it's output characteristics. I've (...)