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57 Threads found on Sige Cmos
Hi all, where can I get TSMC 0.25, 0.18, 0.13 and/or IBM sige design kits?
I am learning analog/rf design and need a BJT model and a cmos model to run my circuits under Spectre(RF). Something close to IBM's sige processes is even better. The models do not have to be accurate and realistic, as I am not designing chips at this time. I know most (if not all) models and design kits are available from, but they ne
Can I make PA in TSMC 0.18 cmos? or I have to use a diffrent process? Like sige bicmos?
How can I acquire sige's design kit?
You're right yolande_yj from the designer point of view there is no much difference using conventional bipolar or sige (it's only the addition of Germanium in the base, to incease performances). For futher details you can download: Wiley sige Heterojunctio Bipolar Transistors - Ashbum available on this forum
hello i need information on linearity vs. feedback tradeoffs in mixer and LNA design and NOT power amplifier design. thanks (si bjt, sige, cmos)
The future is in cmos! If it's true that some companies are having troubles with pure cmos, it's also true that the RF is always driven by baseband capabilities. Now we are in a phase where Bicmos (mostly 0.35,0.25 and sige) is the must if you want product today. I am designing using it. The future (the open question is (...)
cmos process is cheaper comparable with others (GaAs, sige, etc). A cmos PA can meet in some limits the same performances with competitors. Nobody wants to make a cmos PA with poor performance. Just cheaper.
What type of receiver do you want to use? (Low IF, Zero IF ,...) What technolody do you want to use? (integrated: cmos, Bicmos, bipolar,GaAs, sige or discrete....)
sige is a Bicmos technology. So, you have the option to use bipolar transistors ( vertical bipolar transistors ). Usually, these BJT's have a much higher fT ( maybe an order of magnitude higher )than the cmos transistors so they can be used for higher frequencies. I don't think there is a special consideration. You just have the option to (...)
sige has lower flicker noise contribution to close-in phase noise.
Hi I have designed a 1.8 dB NF LNA for WLAN 2.4-2.5 GHz in 0.18 um Si cmos. The measured NF was around 2.6 dB (indirect measurement). Some sige process based LNA (MAXIM) for 2.4 GHz may have lower NF but thats a trade-off. Regards Maddy
If you compare 3 (4) terminal devices the product of current gainbandwidth and the breakdown voltage is important. For MOS devices you get about 70-100GHz*V. sige Bipolar is about 2*3 times higher. GaAs a further factor of 1-1.5. MOS have the additional disadvantage that the above speed is only true if the saturation voltage is very high. Tha
hello i need references (books, papers, thesis) on integrated mmic/rfic transformers for gaas/cmos/sige. please help. thank you.
the emiter degeneration inductor in sige will make the noise matching more easily , it will increase the input impedance of LNA , and by this u can adjust the Roptimum to get the NFmin of the transistor about Q , if u increase the Q the series R of of the L will be min , so the gain of the LNA will increase , but also be aware that inductor dege
Hello, Looking for information on sige Bicmos and cmos 60GHz Radio Building Blocks and Systems at the circuit, system and device levels. Please send any information ! Thanks.
What're the difference between Bicmos and sige? Are they identical? Mesfet+
What do you think which the best book (or article, tutorial...) is in the field of sige RFIC design?
Any technology, sige, cmos, pHEMT ... Frequency > 500MHz, any frequency range Vdd <= 5V Idd <= 10mA Gain >= 15dB Stable NF <= 1dB Input IP3 > 10dBm <-- must have Return loss (in, out) < -10dB Data sheet, application note, paper ... are welcome basically I am looking for a low power high linearity LNA. I am wondering
Why is the work function approach necessary for Vt adjustment in scaled technologies? What is a FUSI process? How does nitrogen and other doping schemes help in adjusting the work function? What are midgap metals? What are the issues with midgap metals in the Vt adjustment of n-MOS and p-MOS, poly sige gates, future directions of this researc
At mm-wave you have few plain-cmos options and the ones you do have, are very low voltage. Stacking costs you geometrically in area and adds losses. A sige device would help. GaN and GaAs suffer from not having the ability to do logic or power management, well. If your "application" wants to be single-chip-does-all, and "all" is any kind of co
bastos & lcg22, I made a gm-c filter 4 years ago, 5th order, with highest BW 500MHz, for hard drive read channel. It's in .25u cmos. To operating over 1GHz, you'd better use <=.18u cmos, or if you like, try sige. I don't see any reason why it can't. I would like to recommend: Y. Tsividis for a complete treatment of this topic (...)
Hi, I am defining the specifications for a new RF IC. What is the procedure that I should follow? 1) Define all the functions ( Direct down conversion or two stage down conversion, ADC, LNA (NF, gain,... ) Digital Functions) and then the architecture and process OR 2) Fix the process (cmos, sige,...) and architecture and see what functi
I think the definition of mmic and rfic are getting blurred now. FT of HBT is improving continously, there are already some papers about 60GHz transceiver using sige process from IBM or Jazz. Mesfet+
Dear People, I need some clarification on the terms of fT (frequency transition) & fmax (maximum frequency). As we know that ft means the value when current gain of the device (BJT/cmos) is unity whereby fmax means the value when power gain is unity. So, when i do sige design, from the design manual i could see that fmax is about 47Ghz. Is this
Bicmos: yes Bipolar + cmos and for RF applications mainly "sige" bipolar + cmos RFcmos: cmos + additional process step to avoid Hot carrier injections (reliability issues) + several metalization steps for inductors. please refer to these article :
Right now, the chip market is down. In MMIC, LMDS and MMDS both went nowhere. Auto Collision Radar has been in the works for years. They are working on 60GHz cmos and sige Wireless LANs. Is this all necessary ? What COMMERCIAL applications will drive both RFIC and MMIC design in the future ? Which technology will win out ? sige ? (...)
I will allow myself to strongly disagree that the bicmos processes have scrappy bjts. I'm currently working with 0.35u sige bicmos and have to tell you that we have both vertical npn and pnp with about 40Ghz Ft for the npn. Also, bjts we use almost everywhere on par with the cmos. Many times they prove to be very useful.
Don't know about TI but know that bipolar is alive and kicking! Look at any sige technology and you'll find its bipolar. I do not believe it will die - actually they were saying this for last 10-15 yrs. But number people who know how to design with it is going down....
Hi, we have (Silicon)cmos, sige, GaAS and Inp for design of Integrated frequency from DC to higher than 100GHz . these are just commercial processes. we use cmos and sige for RFIC and GaAS and Inp for MMIC currently. AS the cmos chanel length become smaller and smaller the frequency operation of (...)
also are you using cmos or sige bipolar?
Is it hard to move from GaAs Power Amplifier / Front End Module Design to RF IC Design in Silicon (cmos, sige) if you have the right course work (RFIC Design, cmos Analog Design). Any tips or suggestions? Many friends of mine want to make this transition.
recently rfic meant silicon while mmic meant anything but silicon (gaas and so on) if you are rf, probably silicon, microwave probably gaas. but today with sige hbt and rf cmos line is blurry.
I think austriamocrosystems foundry provides the 0.35 bicmos & sige bicmos For MPW you can go through MOSIS,
4) how to compensate the gain variation for the temperture , process voltage variation? I design the sige LNA before and use PTAT/Bandgap combine current, how about the cmos, should I use constant-gm, or PTAT or combine both? 5) about the bulk connection, because in my project, there is no trple-well device, so should I use seperate pin fo
Bicmos sige
Hi all I am in the starting phase of investigating wich technology (cmos, SOI, sige e.t.c) and circuit architecture (pipeline, Flash, Folding Interpolating, Sigma-delta) will be suitable to implement a low-power, broadband ADC, with the following specs: Sampling rate : from 0.1-1.5 Gsps Analogue Input Bandwitdht : 2.5GHz Number of bits : 10
In sige and GaAs technology 'gm' and 'ft' is higher than the cmos question is.....what are the advantages having higher 'gm' and higher 'ft'?
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It depends on what kind of technology you will choose. Here are two reference papers who are both wideband LNAs for UWB, and one of them are cmos and the other sige Bicmos. 1. Ismail A,Abidi A.A 3 to 10GHz LNA using a wideband LC-ladder matching network.In: ISSCC,2004 2.Bevilacqua A,Niknejad ultra-wideband cmos LNA (...)
Hi People, I would like to know why sige process is expensive compared to cmos process? In what way they are different which make the price of fabrication to differentiate between them. Thanks. Anachip.
0792375513 Title: Circuit Design for RF Transceivers Author: Domine M.W. Leenaerts Publisher: Springer Publication Date: 2001-10-01 Number Of Pages: 344 Average Amazon Rating: 3.0 Table of Contents Summary: Circuit Design for RF Transceivers covers key building blocks which are needed to make an integrated transceiver for wireless and ce
sige RfF LNA
which process you are interested GaAs HBT, HEMT or sige or cmos!!!
Hi, For PA in WCDMA applications, which process is more preferrd, cmos, sige HBT or GaAs? What are the today trend for modulation schemes and spec for WCDMA? Thanks Any link that enable me to do my finding?
Can you clear up some thing. Are you talking about Process/technology: MOS, cmos, Bicmos, sige.... Or BJT's vs. FET's ? Are you assuming highest frequency to be amplified is your merit of Speed, (Frequency response of the device "S21") or How fast the device can transition from a Low to High state is your merit of speed? (Max (...)
What is the future of RFIC Design in cmos/sige ? WLAN has slowed, WiMax is not taking off. What is left-even cellular has slowed. Any hope ? Please give advice ! Thanks.
analog, mixed signal processes feature some more devices, than a digital process. In some technologies are different in substrate doping also (for example 0.18um cmos technology usually have two type, one with high resistive and the other with low resistive substrate) and other differences can be also... RF technologies are usually sige (...)
most of this range are GaAs and sige but there are research efforts on UCB and many placesto make 60 GHz cmos Khouly
yxo, thank you for your reply. I know we use the tested SNDR in the definition of the ENOB of the AD. That's why I presented this question. Added after 5 minutes: 《A bipolar 2-GSample s track-and-hold amplifier(THA) in 0.35um sige technology》 this paper presented the exact formula I mentione