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Hi guys, Can you answer this question regarding "ft"? Regards, venn_ng
Hi guys I am designing the layout of a a differential amplifier in cadence virtuoso layout xl and technology node is 40 nm. This reqyuires matching of two nmos devices. suppose i made an array of 4x4 to macth two nmos devices, then according to the rule of 40 nm global foundries, how many dummy layers surrounding the main device should i need ?
I am trying simulate an SRAM cell in SPICE. I was wondering what should be the rise time and fall time of the enable signals? I understand that it depends on the source but still what is the approximate practical value of rise time of a signal? Does it depend on the technology node I am using for the circuit?
Almost everybody start one's journey of Analog IC design with the Razavi book titled as "Design of Analog CMOS IC" which was adopted in early 2002. After 2006 many people suggest to pick Analog Design essentials by Willy Sansen. It has latest design technique and technology node is also upto the mark for designing modern analog circuit. Some
the example above doesn't work without a multicycle constraint. I don't see why it wouldn't work without the multicycle constraint, this might have been the case in a much older technology node than today. At 50 MHz this will make timing on any part in that Vivado can implement without multicycle constraints (
Hi there, The technology node defines the device channel length. The transistor fabricated in an IC on a wafer acts as a unit block for the entire IC. The billions of such transistors fabricated on the IC completes the Front End of Line (FEOL) part. The Back End of Line (BEOL) consists of proper interconnections among the billions of transistor
as TSMC/UMC 130nm we can use 1.2/3.3V. Kindly provide me any link explaining technology vs power-supply for MOS technology.
Hi all, I have to design an opamp in 28 nm. So, I used Phillip Allen book as an example. However, then I was looking for Kn or Va - I found some posts (on this forum) like: don't carry about Kn, due to short channel effect - it's relevant. or Va (early voltage) is only for old technologies, not it isn't suitable for design. Sooo, what sh
hi In 130nm technology, the design of transistor with gate length below 130nm is not allowed, but, in few lower technologies like 45nm, gate lenth below 45nm is allowed. what is the relation between technology node and gate length?
Here are a few, assuming that 'lower technology node' means FinFET based nodes (e.g. 14nm or below): 1. At sub-20nm nodes, min-pitch metals are printed using multiple-patterning (double or triple patterning), hence there are lots of restrictions on layout. Hence, achieving maximum density is difficult in multiple patterned (...)
I need 65nm node technology files or less (28nm is preferable) for education purpose for cadence virtuoso. from where I can get those... kindly help me...
Hello , I want to know that how does one define the basic specs for characterization of a new library on a new technology node where no .lib is present. for example: if we have a library that does not come with an existing .lib then as a characterization guy how do I come up with the Min, Max slew and Min,Max load ranges? Do I have to do some
On Multi-Channel and Single Channel : A technology node can have two Channel Length : Eg : ABC is a foundry ABC40 : 40 process node can have 35nm and 45nm as Channel length. Thus we mention ABC40 as multi channel library. Basically, these library will have the same footprint ie 35CL and 45CL. Only difference between these two library will (...)
The model file must match the process technology, i.e. you can use any advanced model file from PTM for the 45nm process.
If you have fixed supply, increasing the size will help. The maximum supply voltage that can be used usually depends on the technology node you are designing in.
how can i test my CMOS technology cut off frequency??(speed limit) in cadence Instead of your transient simulation, run an ac analysis and plot the resulting voltage (at any node of interest) vs. frequency. The -3dB decline point is the cut off frequency. Note: This is schematic. In layout you'll have additi
Some more info? What technology node, load capacitance, power consumption? For the last 6 years the recycled architecture and it's variations are the hit for current efficiency, GBW and SR extension.
Hi This is kind of a though job to list all types of DRC errors that could occur. Depending on the technology node you are using, and the models provided by the foundry, you can get additional errors. Typical ones are: - Layer min widths (Metal, poly, active areas, np, pp,...) - Layer spacings - Layer overlaping to another layer - metal densities
Hi All, I am designing a two stage miller opamp (pmos input differential pair) in subthreshold region. I am using 32nm technology node. The parameters are given below: 1. Supply voltage = 1V 2. Bias Current = 200nA 3. Transistor Length = 160nm=(5 Lmin) There are no specific requirements but I have to just reduce power dissipation. I am gettin
That depends on your testbench setup (supply & stimuli) and the circuit design (continuous-time, clocked, latched, hysteretic or not, ...). It has nothing much to do with tools or technology node.
Hi, I would like to know the technology process node of JN5168 it is a micro-controller used in controlling home appliances. Regards Kumar
Hi. I'm trying to design the following Sense-Amplifier Flip-Flop 113896 I'm using TSMC 90nm CMOS technology, and I'm having troubles doing the design. I'm not getting what I expect at the output node. Can anyone give me some ideas about the correcto sizing of the transistors? I'm trying to achieve a low metastability reg
hi i m designing Rf mixer and using tsmc 180nm, so what is the maximum length that can i use. and if i m using more than 180nm , suppose 360nm isn't it would become old design?
You mainly need to consider two types of variations: vth and K (transconductance parameter) variations. Since your technology node is relatively large, you can assume that vth variations will be dominant in most situations. You can use the approximation that σVTH = 0.1*tox/√(W*L). This discussion is on Razavi's book on section
how could i find technology node from my vtvtlib25.lef ? there is no such terms.. i'm using cadence RTL to GDSII system. is there any commands for finding the node in cadence?? i'm actually a beginner in this area.. please do help..
Am using DRF_1605 module which works on zigbee technology. i am able to read temperature data from temperature sensor by using these modules, Now i want to transmit feedback from the coordinator to the other 3 nodes by using zigbee technology it is work but i put a LED on the PORTA as output to the feedback and it doesn't work. :sad: any (...)
Hi all, I am using 32nm model from PTM . I want to find out effective channel length . If anybody knows how to find it , it will be helpful for me. Thanks .model NMOS1 nmos level = 54 +version = 4.0 binunit = 1 paramchk= 1 mobmod = 0 +capmod = 2 igcmod = 1
We maintain the Poly pitch in lower node technology due to process effects. As shrink size is reduce, the chip is more prone to get affected due to process window variation in fabrication. So, we maintain constant space for poly pitch and the here the process is Dual Pattern technology . You can read about Dual Pattern (...)
Hi. Until which technology node we can use dummy poly & why ? in TSMC above 60nm dummy poly getting off automatically. what is the reason for that ?? thanks in advance.
More VIAs should increase the capacitance. Perhaps I should also ask - Which technology node you are working with. Regardless of technology node, in terms of Physics, yes, for a given net - as you increase number of VIAs - they add more metals in the 3D space - therefore more surface area - therefore more capacitance. (...)
Dear all friends, I am currently a Process integration engineer,that have over 7 year's experience in a mainstream wafer FAB of China. Familiar with 0.18 um to 0.35um node technology process.Personal advantage: logic analysis, observation. I am writing this thread due to want to find a proper job in North American or Europe.If there are an
Well, in our company we used the UDFM from Mentor, tool which generate the fault based on the GDS/CIR of the std cell, and this list could be used by Tessent ATPG tool of Mentor. One group tried on a 0.35um technology, which is not a so "small" node, by using this UDFM fault list instead a "usual" fault list which has reached a 99.3% stuck coverag
Why not try a CML based logic circuits (If power is not a concern). I don't have a reference paper at this moment but you can google it. Lots of materials are available. Again you have to select proper technology node having high ft numbers for MOSFETs (for operation >10GHz typically ft of >50-60GHz should work). Lower the technology (60nm, (...)
Standard cell height depends on the design choice, if you want a 12-track, 14-track standard cell or any other height. Track here denotes m1 pitch (min width+spacing) allowed in a technology. A particular technology node can have more than one height of standard cell library depending on the application, target frequency and power.
Hi ranger01, there is no difference, technology node is the channel length of typical standard core-voltage transistor for current technology. Actually, this used to be true for earlier technology nodes (0.25um/0.18um). There is a source/drain overlap region under the channel, leading to Leff = (...)
How to find out the technology of mos transistor based w/l ratio .. In my tanner simulation the w= 2.50um and l= 0.25 um so can you please let me know how to calculate the transistor technology
Standard CMOS technology - the workhorse of semiconductor industry - has been scaled to such dimensions (at present, ~20nm technology node in or near production, ~10nm technology node in development), that further scaling may be impossible due to fundamental physical limitations. We are forced to think (...)
Let's start from "old" technologies (technology node ~0.25 um or older). According to a classical MOSFET theory, Vt of a long-channel device is independent of the channel/gate length. If channel length is decreased, depletion regions around source/body and drain/body p-n junctions start to overlap, and the barrier for electron injection from source
Can any body present a comparative difference about the 14nm, 22nm & 28nm technology in DRC's. Also details about double patterning.
Let X one of the side of old technology and Y be the side of the new tech node. Area relation between two nodes is X^2=2*(Y^2) => Y=1/sqrt(2)=0.707
Please find the link of the videos about Double Patterning: Part 1: Part 2: I will try to get you the "EXACT" meaning for technology node, though my understanding in my words might not explain it correct.
Hey everyone, hey everyone, I am deploying a relay node into an already existing congested network. i have the choice of LTE or WiMAX technology but right now, I am deploying it in wimax based on ieee802.16j on Opnet. If you have any documents on how to model this using opnet or qualnet for both lte-advanced and wimax networks, please I would
technology SCALING HAS CHANGED BUT DOES NOT SEEM TO BE ENDING, at least not yet. Before I proceed, please keep in mind that all companies, including Intel are not being 'honest' or 'clear' about their transistor technologies. For example, when Intel says '22nm' node or any foundry says '28nm' node, the actual transistor dimensions are not (...)
The answer to your questions not very simple or straightforward. It has been partially answered by PoLo and I'll try to complete the rest of it. It depends on the technology node, how efficiently you design or rather type of design. Starting at the basics, the basic gate delay for Fan-out-of-1 gates (FO1) or Fan-out-of-4 (FO4) is determined using R
ASIC Front End Development: • Specification Development − Features definition, performance targets and algorithm development − technology and package selection for optimal costs and performance − Die size estimate for target technology node − Specification document development and review (...)
Can anyone tell me what is EFP violations in Physical Verification stage? This violation is ainly seen in 28nm technology node
any one face new type of DRC error and rules in 45nm technology... help me ....
smaller gate length is decided long time ago by Mr. Moore and everybody tries to follow. Every single new technology with smaller geometries IS digital at first. Then the analog support is added. As Dick said - analog rarely fills up the fab. So it is driven by digital and density.
Hi All I am very new to this technology, and after reading documents from Audi, Bosch and Wikipedia, I have the following questions: Hardware 2 node on a 2 wires BUS, 1 wire for CAN High and the other for low, both end are terminated. Quesitons: 1. Both are required to transmit and receive, do I have to set both of their statuses respec
MMMC : Multi Mode : Differen modes. This can be functional,Test modes or any other modes. Inside functional mode, it can have many many modes like, PLL works at half frequency or works at high frequency. Multi corner : different corners. Corners will be varied depends on technology node. your understandings are correct as you mentioned.