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Hi! I am trying to understand the "purpose" of different transistors in LM741. In the figure below, - I understand that Q1 and Q2 form a differential pair. - Q5, Q6 along with R1 and R2 for the resistor-ratioed current mirror. I am guessing their function is to act as load. Is that correct? - Q7 is the base current compensating trans
Hello EE friends, I need help solving this sample circuit for class. The photo transistor is responding to a 5khz photodiode not shown. I need help solving out for the output voltage. My understanding is that the phototransistor will turn on and off at the same rate as the photodiode, and the signal created will go to the inverting op amp t
You did not mention the bandwidth of the signal applied to that circuit. For circuits with reactive devices, you should consider the impedance in function of the frequency of the signal. Moreover, in your above calculation, it is not clear if you're aware of the maths that should be used: You cannot algebrically add a resistence with reactance, but
I don't understand two parts in my text book. "for a simple common source How can we reduce the input-referred noise voltage? Equation implies that the transconductance of M1 must be maximized. Thus, the transconductance must be maximized if the transistor is to amplify a voltage signal applied to its gate whereas it must be minimized if the tra
Please take a look at this test I'm doing DC analysis on the transistor to the left and transient analysis on the transistor to the right. I have fixed Vg to 1V and varies Vdd from 0 to 1V for DC analysis
I need help in doing a large signal analysis on a three-stage The first stage or what I'd call the threshold detector turns on when Vin or the voltage supply exceeds the transistor threshold voltage. F
How would you calculate the Vds of each transistor if you had to? I wouldn't. But if I were enforced to ;-) , I'd take/measure the Id vs Vds characteristics with Vgs as parameter of each transistor, then estimate Id and try and find a suitable OP for each transistor for this current. This probably has to be iterate
I'm using this formula fmax=rad((fT.n.L)/(8.pi.Rs.W.Cgd)) to calculate the fmax of an rfnmos2v transistor in Cadence, where fT=gm/2.pi.Cgg, n=number of fingers, Rs=sheet resistance, and Cgd=0.4f.W(in mircometers). W and L are clearly the width and length of per finger, and I'm using 180nm technology. Problem is, when I use sp analysis to view the f
the phase magnitude plot doesn't seem to indicate a stability problem (see attached images). To say so with some reason, you would have performed the AC analysis with a parametric sweep of output current set point. Did you? The problem is that transistor gm varies with drain current, loop gain does respectively. In addition, larg
Hi, I am attempting to simulate the PLL phase noise in ADS using the available PLL blocks which I have implemented in transistor level in ADS. However, the closed loop analysis in ADS does not worked so I wanna do by adding the noise of each block to the s-domain PLL model but I don't know how? Is there anyone help me with this problem? Thanks,
You are calculating the ac resistance. There are lots of transitor parameters that will change between DC and AC situations. One basic difference will be due to the complex part of the transition impedance of the transistor. For example if the impedance is in the form of Z=R + jwX, since the latter part is frequency dependent, you will see differen
Hello, i succed to simulate two monopole antenna in hfss but i dont understand the simulation results because i m beginner in hfss: The difference betwen S11, S22; S21 and S12; RF books will teach you about S-parameter. Guillermo Gonzalez, "Microwave transistor Amplifiers, analysis and Design, 2nd. Ed.", Pr
A transistor has exponential transconductance. Then without any negative feedback when the signal level is low the output is fairly linear but at high levels it is extremely distorted even if it is not clipping. An opamp can have a wide frequency response at low output levels but at high output levels its slew rate limits its high frequencies.
Hi i need to do the noise analysis for 4 quadrant multiplier. I just understood noise analysis is nothing but accounting for all the noise from every single transistor, resistor and other components. Kindly let me know if this understanding is correct. But i am confused how to do it and how first of all the graph should be. Becoz i found (...)
Hi, Your circuit is absolutely symmetric. But the startup needs sone unsymmetry. In real world every capacitor differs from the other, every transistor differs from the other... You can give your circuit a kick start with a pulse or just make it a little unsymmetric.. Try it and tell us if you see any difference. Klaus
I presume, you are reporting simulation results. Wouldn't it be appropriate to analyze the simulation in detail, e.g. look at individual transistor voltages and currents in the transient analysis to find out why the circuit doesn't behave as expected? You have all the information at your fingertips, he have about nothing.
Since I thought this good question deserved a better answer when I looked again on ETO, so I copied my answer here. I don't see it as a bad design. I rather think it is a fairly good design that needs to be analyzed with experience. It is just an analysis of a non-inverting High-side switch. ** See edit at end ** Zin = 100K input impedan
Hi, This was our textbook in university : Microwave transistor Amplifiers: analysis and Design by Guillermo Gonzalez (2nd Edition) it's a very good book with detailed examples. and this is another one : Microwave Circuit Design Using Linear and Nonlinear Techniques , by George D. Vendelin ,Anthony M. Pavio, Ulrich
ATF34143 is an LNA (Low Noise Amplifier), and by definition any LNA should work in Class-A. So, good PAE (Power Added Efficiency) is not the main target of performances of this transistor. For best performances follow the Avago application notes 1190 and 1191.
Dear Friends, I have searched lot in the google, I couldn't get it. I request you to show me document for the small signal noise equivalent model for CMOS transistor and HEMT transistor. If you know somebody, complete analysis document for the noise small signal equivalent model of CMOS transistor and HEMT (...)
Run a Monte Carlo analysis - if your transistor models include mismatch and/or process variance parameters - and display the delay measurement statistics ordered in your control file.
It's essentially a system simulation problem because simulating it on transistor based is pretty difficult. If you know PN behaviour of each PLL block, you can simulate them in a system simulator even in MatLab.
I have noticed in the google search and literature survey Small signal analysis and obtaining related equation of input and output impedance, gain, noise figure for MOSFET and JFET transistors. Similarly I couldn't find small signal analysis and obtain related equation for input and output impedance, gain, and noise figure of pHEMT small (...)
... when transistor is fingered, the resulting noise is up to 2x smaller than KT/C. for the others, the noise is pretty much KT/C... In smaller node sizes, thermal gate noise voltage may add a not insignificant contribution to the total thermal noise. The main culprit for this contribution is gate seri
It depends on the tools and PDK. Some PDK's have different transistors in the library for monte carlo simulations. In other PDK's it's an option in the transistor properties. In AdeXL you can also select which devices should be included in the monte carlo analysis.
Monte Carlo analysis Histogram Today at 11:34am Quote Modify Hi All, I am designing a current conveyor and I am doing Monte Carlo analysis(by varying width and length of transistor) for Current gain , voltage gain and Rx,Ry & Rz. I am using code as given below: Vdd 5 0 2.5 Vss 20 0 -2.5 Ib 0 2 100u vin 7 0 ac 1 sin (0 100m
... I want to get information about operating conditions of each transistor(like gm,vgs,vth,id etc) . How can I get these parameters and which type of analysis on symbol will yield these parameters? The same as for an analysis on schematic: DC . In the simulation stop list, "schematic" must be prio
Hello Here is my circuit and dc bias point 108724 and here is ac output voltage 108725 question 1:the output amplitude is too much higher than Dc input voltage what is my mistake or spice mistake? question 2:if we want to find upper and lower frequency ( cutoff) we should calculate (1/sqr(2
The relay contact at transformer secondary side seems does not make sense, due it is controlled by transistor output, which interrupts its biasing current. Except it, seems to be a primitive control for over voltage, interrupting the power leading at output just under a certain limit defined by potentiometer. By the way, the secondary side i
Hello, I want to ask you EDA-board gurus for suggestions with HSIM Co-simulation and Monte-Carlo simulations. I want to run a MonteCarlo simulation in a relatively large transistor-level circuit (imagine a microcontroller), but the caveat is that the environment to this circuit is very complex and event-driven. For example: if signal
Hi everyone. I am looking for some good introduction tutorials on BJT and MOSFET transistors. I am looking for tutorials that list "the steps" to take to do circuit analysis on BJT and MOSFET transistors. A tutorial that goes into good detail for cutoff, active, and saturation modes of a transistor. Overall, I am (...)
... sweep the input voltage from 0 to 1.2v After DC simulation, I use results -> print -> DC operating points to print the results. But after I select one transistor, why there is only one voltage point printed, not a range from 0 to 1.2? How can I get a group of points? If you print the operating poi
Hi all ; I'm a beginner in using ADS there are someone who can give the introduction. knowing i use a MOS transistor in my simulation . regards;
Biolycans, in all of your considerations you are mixing STATIC resistances and DYNAMIC resistances. For a good understanding of transistor functions it is very important to note that each transistor is a non-linear device. And in those cases it is always necessary to discriminate between differential (dynamic) and static resistances.
You can perform this analysis yourself, just deducing that each transistor Q invert signal from Basis to Collector. It means that 10v placed at any Basis, produces 0v at its collector. Due Basis of next transistors are connected to previous transistor Collector, signal will be inverted again and ahead. In other words, this (...)
Yes, with characterization tool you could generate the liberty file from spice netlist (transistor model). I don't know nanotime.
spice is a transistor simulator. So you need to built a circuit via text file or via schematic editor to generate this text file to then simulate it with a spice engine, and you need some stimulus.
definition of s21 is the voltage gain, |s21|^2 is the transducer power gain. For your transient simulation: it depends on the strength of your input signal, maybe your transistor is already in saturation. maybe post your results.
Because the operation is not small-signal, traditional noise analysis is likely unhelpful. Your output jitter is likely to be dominated by things other than intrinsic transistor / resistor noises. Even if these devices have proper noise params for the transient / pnoise to work, they are trivial contributors relative to input supply noise, ground
Hi, Can anybody tell me what is a square transistor.I came across this word when I was reading the following paper:"Static-Noise Margin analysis of MOS SRAM Cells EVERT SEEVINCK, SENIOR MEMBER, IEEE, FRANS J. LIST, AND JAN LOHSTROH, MEMBER, IEEE".
Hi, I am working on the design of a charging circuit, where i have to increase the transistor width to almost 5000 um for allowing the current to be 500mA, but when i increase the size of the transistor an error of this sort comes in: Gmin = 1 pS is large enough to noticeably affect the DC solution.
can we do transistor level simulation and also information about what are all the features which are useful for project designing of double tail comparator whether this tool is used to do power ,timing, die size analysis etc if anyone who are interested help me pls
It is only natural to think this would work. It appears to comply with the concepts of transistor gain. However your schematic will only work during the signal's positive waveform. As soon as the signa
Try something like this : 90137 I want to analysis the operation mechanism of the circuit i made simulation to note how much volt will be devolved across the coil with power supply 6V and input voltage to NPN transistor 1.5. Suppose if the 1.5V is not applied to the NPN transistor
Hi, You can do it from dc analysis. In sweep parameters choose the "component parameter" position, like this: 88817 Run simulation and now you can plot transconductance curve vs w or l of transistor.
Laplace transform is only applicable to linear systems, transistors are highly non-linear devices. How do you imagine to model it with laplace?
Hi everyone, I want to simulate the effect of mismatch and process variation on the system performance of my SAR Analog to Digital Converter. The system now is simply ideal system with only one transistor level block, the other blocks are written in Verilog-A code in Cadence-Spectre. The easiest way to simulate the mismatch and process v
Hello everyone, I'm just having the roughest time ever trying to write an atlas code for simulating a SiGe n MOS short channel transistor. I'm really new to atlas Silvaco and I've read a couple of examples, but I don't know how to setup a short channel mesh and how to create a pesudomorphic or virtual substrate alloy of SiGe to use as substrate
you must see some examples on microwave transistor amplifiers design and analysis,Gonzalez but first you must check your transistor is stable or not then matching

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