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Hello all... Why i'm ask this question.So,becose my digital universal mutimeter can only count transistor hfe. Well i use Pintar Virtual Lab for my simulatios and he use ß-beta for amplification factor. I ask you wich formula convert hfe to ß-eta? thanks advance zlatko
but no way of gauging exactly how much IB is needed or knowing the expected vbe Yes, that's true. You would use a circuit, that can tolerate some amount of hfe variation by utilizing feedback. Most practical transistor circuits have it.
Does anyone know the temperature coefficients of the following integrated components? diode (Voltage/Temperature) base diffused resistor (Resistance/Temperature) transistor hfe (gain/Temperature) All are for bipolar IC process. Thanks.
Does anyone know the temperature coefficients of the following integrated components? diode (Voltage/Temperature) base diffused resistor (Resistance/Temperature) transistor hfe (gain/Temperature) All are for bipolar IC process. Thanks.
First we look datasheet fig. 3 , hfe = 25..50 ,(Vce=4.0V), we take 25 Ic >> 4A , Ib >> 160mA fig.5.& fig.7. when we go near saturation Vce<2.0V we see Ic / Ib is about 10- so we need for Ic=4A >> Ib= 0.4A ( R about 27 ohm ) I think , that is too much to taken from op.amp. So we must make darlington circuit to add amplification.
Have a look at this project: It is "Full Featured transistor Tester", and hfe measurement of NPN and PNP transistors is included .. Regards, IanP
can anybody tell how hfe varies from transistor to transistor on the same substrate . Is it a statistical distribution
The datasheet for every transistor part number gives a range for hfe. It also shows the hfe changing with collector current and temperature. You should design a circuit with enough negative feedback so that it works when the hfe of the transistor is minimum or maximum and also works with the minimum and (...)
how much difference will a transistor with hfe 15-20 & 20-25 will bring to the circuit while all other parameters being same.
Hi, I buiding simple transistor switch circuits using 2n2222. I looked at the datasheet for the value of hfe.the datasheet gives many values of hfe. how do I know which value to take for my calculation. the values range from 35 to 300. please help me with this. thank you.
Need datasheet for BFP519 transistor :?:
I bought that issue. The article describes as title says transistor identifier. It can determine type of transistor PNP, NPN, NJFET, PJFET, NMOS and PMOS. IT allso indicates transistor pins EBC SGD and measures hfe, RDSON and cutoff voltage at fets. Instrument is build arround PIC16F872 it has 2x16 LCD. As I understand (...)
The long time question of hfe..... well, hfe depends on the aplication u are using the transirtor for. eg: if you are designing to work on saturation you wanna try an hfe of 10 or less to asure the transitor keeps in that region, this hfe u desing when polarized, witch i dont think is your case. The other way to decide on (...)
What is the relation between hfe and beta of bipolar transistor?
I am looking any info about this transistor. Thanks, Pool_77
You can connect two transistors in different Darlington pairs. It can be connection of PNP+PNP or NPN+NPN or NPN+PNP or PNP+NPN. Second transistor has usually higher current ratings if needed.
Few times before we said that transistor is not current splitter. But if we follow walters idea of current splitting specially when we put some music signal to the base, soul for example, we can say the transistor is body/soul splitter. Body (current) goes to emitter and the soul goes to collector.
1. decide NPN or PNP Daigtal multimeter Red Probe is " +" =P type Black Probe is " -" =N type Analog multimeter Red Probe is " _" =P type Black Probe is " + " =N type You can decide the transistor is PNP or NPN . Added after 15 min
You should search for 2SA1154 in the above link. It is there. I found next data: 2SA1154 transistor GENERAL PURPOSE Material : Silicon Polarity : PNP VCBO(max) Collector-to-base voltage, dc, emitter open : 60V VCEO(max) Collector-to-emitter voltage, dc, with base open : 60V VEBO(max) Emitter-to-base voltage, dc, collector open : 5V I
Why does a transistor heat when base current is high
Suppose you know the type of transistor, this transistor's circuit also include many resistors around it, what parameter of transistor (get from datasheet) that you need to know for the enough calculating (finding the value of resistors) ? Thanks !!! Here is its datasheet
Hybrid parameter (or H-parameter) is one of a set of four transistor equivalent-circuit parameters that conveniently specify transistor performance for small voltages and currents in a particular circuit. The expression hfe, known as a hybrid parameter, is the common-emitter DC forward-current gain. It is equal to the collector current (...)
I am just learning about electronics and i understand how transistors work but I am having trouble with the math side of things. I am studying the single transistor inverter (which I have drawn very poorly below). If i have a datasheet for the transistor i wish to use, what information do i need, and how do i use it, to work out what (...)
hi, folks. I would like to know why the resistor for the base of 2n3053 is 330 ohms how do we calculater it ? Here is what I think: in a transistor ic=ie hfe = ic/ib ib= ic/hfe since ie approximately equals to ic let ie be 300ma and hfe be 100 ib = ie( 300ma)/hfe( 100)=3ma let's assume pin (...)
hi every one i had searched a about the idea of biasing the transistor in the common emitter circuit i had read different ways but am little confused about something that i want to ask about 1) I read about the q-point at which he transistor must be set at dc operation before injecting the small ac signal to the base..the articles talking a
Can anyone please say what is meant by transition frequency fT seen on transistor datasheets. For BC547 fT=300MHz and for BF494 fT=120MHz. Why it is low for BF494 compared to BC547 even though BF494 is a medium frequency transistor and BC547 is a low frequecy one?
Well Ib=(V1-Vbe)/R1=(10V-0.65V)/100KΩ≈93.5uA If BJT work in active region Ic is equal Ic=Ib*β=93.5uA*β So if our BJT has β=60 Ic will by Ic=93.5uA*60=5.61mA. But if our bjt has β=100 then Ic=9.35mA and transistor will be working in saturation region. Because [b
To check the gain, the tester needs to be able to measure the ratio of collector to emitter currents. This will need a PIC with ADC built in. The other transistor tester discussed in this forum does not have this, besides, it tests for FETs too. My advise would be to study that schematic for ideas and then modify it for measuring the collecto
Hi I'm a newbie in electronic. And I just read a transistor datasheet. I need help understandng the value. This are some value from the data sheet : --------------------------- IC (cont.) (A) 4.0 --------------------------- hfe Min. 300 Max. 1200 @IC(mA) 1000 @
Audioguru: I was looking on the internet for calculation for a transistor as a switch, and a lot of sites uses hfe and the relationship Ic = hfe * IB to calculate the Base resistor: IB = IC / hfe Then RB = (VB - VBE) / IB Can you show the documentation where it makes reference to 1/10th of Collector current ? I (...)
There is no real need for the two each 1k resistors and the transistor. Just the 680 resistor and the LED in series with the switched 9 V would do the same thing.
Luigi, you just need to check if the transistor is working, or you need to make some measurement? (Like hfe, Vcesat, etc). Regards.
instead of using 4 transistors + resistors u can use ULN2003 to drive relayz with more eaze
I need Motorola 185 M9627 NPN bipolar power transistor datashhet or at least basic info like hfe, Vceo, Pd, Ic, etc... Tanks, Fernando
Hi all, I would want to amplify a DC current from a generator provided by an op amp... I would want to use a bipolar transistor but I'm not familiar in biasing in "DC current amplification mode". The output current should be equal to 100mA. What kind of topology can I use ? and what kind of biaising should I use ? regards
Yes the voltage swing will be from VCC up to zero down, ideally. There is always some voltage drop in the resistor and the transistor, (about 100mV). About the second question could only be answered if we knew the β (or hfe) of your transistor and supply voltage. When amplifying a signal there will ALWAYS be some distortion because (...)
Hello- I am using a PIC microcontroller, 18F452, 5V. The maximum current source/sunk from any IO pin is 25mA. The maximum current source/sunk by PORTC & PORTD combined is 200mA. The maximum current source/sunk by PORTA & PORTB & PORTE combined is 200mA. I am using all of PORTC (8 pins) to switch 100mA of light wire per each pin. I am not usi
Hello, is there any equivalent for RCA 40242 transistor? Any suggestions?
I agree with the above posts. If you study how bipolar transistors operate, you will find that the collector current is determined by the charge in the base-emitter region. Hence they are voltage controlled current sources since the charge is proportional to the BE voltage. The collector current is an expontential function of the base emit
Quick calculation : 100Watt at 10V input voltage (neglecting efficiency of the system) = ~10Amps in the transistors. The transistor you choose is not good. Maximum,specification only 6 amps. hfe in the order of 30 for high currents, this means you should need 333mA base current at 10Amps, not good for the 555. You need better (...)
Small variations in the base current will have big variation in the collector current. Check transistor explanation in the following link Tutorials, Electronics made EASY, Williamson Labs Alex
Ive got a npn transistor circuit set up in a emitter amplifier configuration.Ive set the base voltage at 5v though the voltage divider and set RE to drop the remaining 4.2v at 50ma which should control IC and IE current. The problem is how do i calculate the value of r1 or r2 of the voltage divider so that it will output 5v even after being conn
the input (vs3) has max amplitude of 10V, and +V Supply (vpos) is +12 and -V Supply (vneg) is -12. the resistant is 10 ohms at minimum So the power is lower than previously stated. Maximum power dissipation of each transistor occurs at Vsupply/2 output voltage, it's 12*12(4*10) = 3.6W, maximum current is 1.2 A. You can use smaller
crazyjohn, Follow the simple BJT eqautions, transistors have same basic eqations relating all its parameers like Ic, Ib, Vce,Vbe,hfe etc. First check it with given values in data sheet. then you calculate required value with available values of other parameters. And well, if you designing something, the dig every thing until you satisfy....Give m
You need a voltage gain of 100 which might not be possible if you bias the base with a negative feedback resistor from its collector. It depends on the signal source resistance. If the source resistance is high then the gain is low. A transistor is never biased with just a single resistor from the supply voltage.
hey am having a problem driving a 5V relay by 2N2222 NPN transistor by the following I increase the supply voltage, it works fine and when I try to energize the relay directly by 5 volts it works too
I am working on a project that consists of two separate circuits. On one side is a DC fan powered by a 9V battery. On the other side is an igniter that is powered by 1.5v. What I need to happen is for the fan to run only when the igniter is receiving 1.5v. After some research it appears a transistor may be the best way to do this. Howe
Hi, I'm a bit confused from the datasheet of transistor BC548B I want to know beta or hfe of this transistor, but it is confusing from looking at the datasheet below. BC548B Datasheet Can you have 2 values for hfe? Thanks
did you turned the data bits off just before switching the transistors? And also did you include a small delay before switching transistors? Because nothing is ideal... Any way, i dont know if that is your problem or not... Wait for experts reply.
Thanks for quick reply. Do you know any transistor with diode built in? I am looking for something with Ic ~3A and hfe ~500.