Search Engine www.edaboard.com

178 Threads found on edaboard.com: Transistor Length
Well the design constraints are the noise, speed, offset and power dissipation. For high speed, you will need minimum length transistors. The noise is mostly dominated by the input differential pair. So you have to do a PNOISE sim and keep increasing the width of input diff pair till you achieve your target. Similar exercise needs to be carried out
Hello, In the attached photo, does these numbers mean that finger-width/channel-length=25.2/2.1 and number of fingers=20? 132377 Thanks,
Hi there, The technology node defines the device channel length. The transistor fabricated in an IC on a wafer acts as a unit block for the entire IC. The billions of such transistors fabricated on the IC completes the Front End of Line (FEOL) part. The Back End of Line (BEOL) consists of proper interconnections among the billions of (...)
Usually the packaged S parameters taken by the chip/transistor manufacturers includes the pins length, so you don't need to take in consideration traces inside the DUT reference. If you do your own S parameter measurements, better is to include traces inside DUT reference.
Hi, I read a paper in which i read this sentence:"The supply voltage is 3V to improve the signal swing with both 3.3V high voltage transistor and 1.2V low voltage transistor used". What exactly is the 3.3V high voltage transistor and 1.2 low voltage transistor?Where do these voltages refer to?
Hi I m designing a two stage ota using gm/id method. I have a problem in picking the length of the transistor. I have chosen a large length for large gain and good matching. And my ft is around 10 times the UGB of the ota. Are there any relationship between ft of the transistor and UGB of the amplifier. I mean is there any (...)
Hi, I would like to know if the threshold voltage of MOS transistors vary with the number of fingers in these advanced technologies. I mean compared to multipliers, does the threshold vary? Thanks!
Hi all, I am doing a project that needs me to design a NMOS transistor with a channel length of 20 nanometers width dependent usingdevedit command Silvaco TCAD tools. As you may know, there are examples provided in the software that I am using to customize in order to get the required channel length. So, I have to modify the silvaco (...)
I'm using this formula fmax=rad((fT.n.L)/(8.pi.Rs.W.Cgd)) to calculate the fmax of an rfnmos2v transistor in Cadence, where fT=gm/2.pi.Cgg, n=number of fingers, Rs=sheet resistance, and Cgd=0.4f.W(in mircometers). W and L are clearly the width and length of per finger, and I'm using 180nm technology. Problem is, when I use sp analysis to view the f
hello everyone, i installed ic615 and mmsim121 recently.i am able to simulate a simple circuit using ncsu pdk in virtuoso ADE. same thing i tried with umc pdk.when i give transistor width/length directly as number in object properties,simulation is working.But when i give width or length as variables,new unknown (...)
You're talking lambda in the model statement, as channel length modulation, right? Not lambda as a PDK variable for process-independent transistor sizing? You could probably find the answer according to Cadence in the Spectre modeling manual (or the deeper half of the user manual perhaps, but not always the detail you seek). Dig deep enough and yo
Hi what is the minimum length of transistor in organic transistors? when I use 0.18um technology process designkit of TSMC in cadence I know the minimum length is 0.18um but I dont know when I use the Organic process designkit (OPDK) what is the minimum length of this type of transistor , (...)
i heard that i should use the same transistor length for ALL MY DESIGN , otherwise it would cause troubles in layout phase? is that true? Not at all. Use the transistor models provided by the fab, and assign widths and lengths as you need. Depending on the models there will be min. and max. limits for both wid
So I am trying to design an OTA to meet the following specs: 116641 Plus the following constraints:  The maximum allowed transistor width is W=100um.  The maximum allowed transistor length is L=20um.  The maximum allowed capacitance (if you use Miller
Dear scholars In subthreshold region, why does the standard deviation of Vth decreases when length of transistors increases? Thanks in advance
What is the gate width, drain width, and source width of the pHEMT transistor ? Similarly what is the gate length, drain length, and source length of the pHEMT transistor ? Gate width of pHEMT transistor is 150 ?m and gate length of pHEMT (...)
Extract/calculate/estimate the in-cell capacitance of the bit-lines incl. their row-to-row length, add the input capacitance of the wordline switches, multiply by the no. of rows, then add the I/O capacitances of sense and force bitline switches as well as the output capacitance of the precharge transistor(s). If you can't extract from an availa
In transistor level circuits for smaller technology nodes, the on-chip process variations causes many reliability issues. To find the probability distribution of circuit delay I would like to do a Monte carlo simulation by sampling channel length distribution of each transistor randomly and find the circuit delay for each sampled value (...)
What do you mean with: " The transistor is powered in the threshold regime at 250mV".? The common terms to describe the operation region of a mosfet is either weak inversion (sometimes called sub-threshold) or strong inversion. The region between strong and weak inversion is called moderate inversion. Do you mean that vgs=250mV?
Monte Carlo Analysis Histogram Today at 11:34am Quote Modify Hi All, I am designing a current conveyor and I am doing Monte Carlo Analysis(by varying width and length of transistor) for Current gain , voltage gain and Rx,Ry & Rz. I am using code as given below: Vdd 5 0 2.5 Vss 20 0 -2.5 Ib 0 2 100u vin 7 0 ac 1 sin (0 100m
How to calculate (W/L) of pull up and pull down networks.Please help me with detailed description or provide me with some material. Thanks.
For biasing you can use a λ/4 stub replacing L2/C5. And compensate for transistor output impedance by tuning the line length.
... I dont want stack 8-10 transistor over full editor windows, there must be some trick for that, isn't it? Make an extra cell from such a stack.
In custom digital design , how can I determine the values of(width,length) of transistor , for example for comparator or flip-flop?
What do you see at the terminals when it stops working? Extremely long leads can bring you oscillation problems, consider the 3-wire bundle as a lousy tank and feedback. Just to pull decent DC curves from high frequency transistors on a ~10cm wire length fixture often required ferrite beads to keep the thing from oscillating. At 10 meters, bet on
Hi Bravo, the parameters of 180nm TSMC, like transistor lenght and width, it is fixed or varies? What do you mean by fixed L & W. If they are fixed then how will one design ?? Meaning of 180nm technology is that the minimum possible length that you can use is 180nm. But you are free to use higher values (there
I think there is an error in this. In a 65 nm technology, printed linewidths cannot go below 65nm but the effective transistor width or electrical width (Leff) can go as low as 25 nm. The pitch is just the minimum length of gate + minimum space between gates.
Hi ranger01, there is no difference, technology node is the channel length of typical standard core-voltage transistor for current technology. Actually, this used to be true for earlier technology nodes (0.25um/0.18um). There is a source/drain overlap region under the channel, leading to Leff = Ldrawn - Loverl
Hi, I am starting to use Cadence to simulate circuit. For transistor, there are many concepts that I don't know, I have searched a lot but found little. If anyone has some documents about the following, please tell me. -Width per finger -length per finger -Multiplifier -Number of finger -Finger
These values only affect the ac & transient simulation results. You could measure the drain & source lengths (ld & ls) - usually they are equal. If so (ld=ls=l) : area as = ad = w*l (w=transistor(gate)-width ; l=drain-length resp. source-length, l is perpendicular to the gate) periphery ps = pd = w+2l (the width (...)
Hello.. I design 15Ghz inverter with good results but peak to peak current is about 20mA..I want to reduce it upto 3mA.Please help me...I already increase length of transistor.
how to adjust width and length of the transistors...? what we should consider while adjust the width and length..? Any equations..?
hi all i am modeling a nanowire transistor and i need to extract threshold voltage versus different channel length who can tell me how i can do it in deckbuilt of atlas simulator in fact my problem here is that i can not alter channel length as a variable and plot extracted threshold voltages from different structure (with different (...)
Look for an alternate PDK mos primitive that isn't "digital" or "rf" - these will tend to be fixed length in the interests of modeling edgy performance. There ought however to be an "analog" or "i/o" transistor type with parameterized L and not-as-good high speed modeling. You'd think.
As I have understood, if I have a single fingered transistor with a certain width and length then by using 2 fingers I essentially double both width and length. Right? No. The individual fingers of a transistor are in parallel. So you double/multiple its width but not its length. length (...)
Hi, First, ft=gm/Cgs, and therefore Ls = 50/(6.28*279G) = 28.5 pH :) Second, seems like you got wrong value for Cgs, i measured Cgs for transistor in 65 nm technology with gm = 34m and it equal 270 fF. If value of Ls very small, one of possibilities is decreasing ft of transistor with additional capacitor or increasing channel length.
Hello everybody, I've been encountering a very strange problem, recently. I am using the GPDK090 package with IC6.1.4.500.6 where i try to use a variable for the length and width for the transistor nmos1v. Unfortunatly, when the netlist is generated, cadence somehow does not include the parameter width(and those who are dep
do i have to just use m(multipication factor) or something else? Depends on your PDK: m usually generates multiple single-finger transistors. For fingering, usually the parameter f is used.
One way would be to use a current mirror see attachment for reference. You do a DC sweep for param vd. To get the Early voltage you will also need to interpolate the line which corresponds to the slope of the channel length modulation in saturation of the transistor and find the crossing with x axis. The crossing with x-axis will be more ore less :
Hello all, I was wondering from the experienced guys, what the max recommend W to L ratio used before going to fingers or Multiples before seeing a voltage drop over the gate length. For example, I have always used the 10X rule, therefore if my L =100nm the max W could be 1um. If I drive the transistor gate from both end
hello everyone can any one explain about non-ideal characteristics of a MOSFET Velocity Saturation? Mobility Degradation? Channel length Modulation? Body Effect?
As mentioned in the previous reply, as a result of channel length modulation the mosfets have a finite output resistance (rds= 1/ (lambda x Ids )) - as opposed to the ideal case inwhich they could operate as a perfect current source in saturation with rout = infinity. One of the main effects of lamda is in calculating the gain of a transistor (A=
Hi all, I am using 180nm technology and i am designing circuits from transistor level. I have an inverter & i want to increase its propagation delay so i have kept its width minimum i.e. at 360nm and i am incresing the length. Now the minimum length we can use is 180nm, i want to ask what is the maximum length we (...)
can anybody help me,Apart from transistor gate length, where we can observe the variations in two different technologies?
Hi im using athena software. Recently need to finish a task of simulating 0.6 micron transistor. Based on attached picture, where is the channel length, I hope someone can download and draw the channel length and reupload. And last question, what is the program code I need to adjust to get the 0.6 micron gate length (...)
Hi currently im doing mosfet transistor simulation with gate length =0.6 mikron. Anybody here knows what are trade off in design in order to meet with specification?
Hi - I am building my own PDK for a 0.35um technology. My input form to place the transistor symbol uses units for width and length. Now I want to draw parametric pcells. In that form to place the transistor in the layout, it seems that the input form does not work with units.. Any hint? Thx in advance.
It shows: **error** unrecognized instance parameter w used with e() syntax. I don't think resistor and transistor can use the same width and length parameters, if the abbreviations are the same. So try and use different abbreviation designation names for the resistor, e.g. WR & LR . Apart of this, I think it
Your 1u/1u transistor is one square but to this you have to add the gate contact tab geometry and gate contact resistance terms. You should draw out the layout and pick off the L and W, squares = L/W. Now within the FET the resistance is distributed and so is the Cdg/Cgs. Your L is from one point to another, and picking the right ones is key.
i am choosing design parameter for 45 nm technology NMOS transistor that is a part of interconnect buffer in ptm model the suggested values for transistor width is 17.5 nm for NangateOpenCellLibrary the suggested chanel width is 50 nm whic