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I have this oscillator design and it says it operating at weak inversion region. How do you do that? I thought Vgs controls everything whether something in saturation, triode or weak inversion but the block diagram doesn't show Vgs how it could make the device in weak inversion region as opposed to other mode like saturation or
Hi, I am designing an 5-stage oscillator using Maneatis cells. Now, I do have a hard time knowing what things to do first. I designed the Maneatis delay cell but in order to keep the PMOS loads in triode region, I had to fix the value of (bp), which is actually (Vctrl) of the VCO, so that the loads operate in triode (...)
Hello, I am designing a Maneatis Delay Cell along with its replica biasing cell. I have a few questions regarding the replica cell: 1) Is it necessary for the transistors in the replica cell to work in the same region of operation as their replicas in the delay cell? I mean, does one pmos transistor has to work in triode and the other in satu
First, notice that the drains of M12 and M13 are tied together. Which means if the overdrive of both maintain the same total it's not going to change the total current flowing through them (ideally, not really). This means that the current flowing in total is independent of differential signal. When they both go up and down together (current pul
128051 Hello, It is the problem in the Razavi's book chapter 3, 3.19 (b). I think the M2 is in the triode region because M2 is in the saturation region when Vy-Vx>Vb1-Vx-Vth2, i.e., Vy>Vb1-Vth2. Razavi assumed that Vb1>Vb2>Vb3, so that Vb1-Vth2 is bigger than Vb3+Vth3, which means even if Vy is bigger than Vb3+Vth3 it
Hello. I just want to know whether we can refer bias voltage to mosfet operating in the triode region.. I've thought bias voltage means making mosfet operate in the saturation region. Thank you.
Interested also in having some clue to this question ! The only thing I know is that triode region has more dispersion than saturation region.
See here in which region you should operate the transistor: 126345 triode, also called linear region, because Id grows essentially proportional to Vds. The slope of the output characteristic (Id vs. Vds) determines the resistance Rds; the slope is defined by Vgs. Higher Vgs means lower Rds. You should allow
Hi i am reading a paper "+ 1V high frequency four quadrant current multiplier" It operates in triode region and i know the eqn for triode region is Id= K 125985 Mp and Mn are in triode and Mc is in saturation.. i am able to understand that Vds in the paper is (Vin +VDD) and Vt is Vtp. But for
In cadence DC analysis operating point there are two parameters ron and rout. I see that ron and rout are defined for all operating region (sub-threshold, triode, saturation). So, what are the definition or how these parameters are calculated in these regions? It makes sense to define ron in triode (...)
I still want to get a linear change in resistance even below the cutoff/threshold voltage (0.6-0.7 V), is there any mechanism or other circuitry which can be used to achieve this ? The resistive part of the Ids vs. Vds characteristic (called triode or linear region) has nothing to do with the MOS
Can you confirm that both nmos and pmos are being driven deep into triode/cutoff regions? And that their is no cross conduction?
Hi, region 1 is triode region 2 is saturation region 3 is subthreshold region another one region 0 it is for cutoff region 4 maybe breakdown region ( I am not sure about this)
I think if the output stage is ensured to remain in triode region throughout its operating range, then the distortion will be less. I'm sure you thought of saturation region ? ... if we drive the output stage into linear I think that the signal will be distorted at it'
With a simple PMOS/NMOS in triode region, the total current resp. its resistance is fixed, and you probably have to adjust or regulate it from the other side of supply. With the current mirror solution you have the possibility to control the total current through the differential pair without the necessity to control the load-side transistors. A
HI, I used the attached circuit to drive led about 10A. if mosfet operate in saturation region, the dissipation power of mosfet is large. so is it possible that mosfet operate in triode region in vccs. and what is differences between them, for example In triode region will cause the current stability (...)
Hello forum I am trying to switch mosfet. I am using 1 ohm resistor. My aim is heating or cooling resistor. First, ı tried basic common source configuration. I used 1 ohm resistor as a drain resistor. My gate voltage is either 3.3 v or 0 v. With this configuration, mosfet cant enter triode region. So how can ı swi
What is your headroom? The classic cascode needs Vmin=2?Vod+Vth. In addition using minimum L mosfets is bad idea due to channel modulation effects and higher threshold voltage for fets with Lmin. Check dc OPs, I bet that in cascode CM some of your transistors works in triode region.
Generally flicker noise tends to rise with Vov, see the following snippet. Hence triode region (large Vov, small Vds) will probably exhibit more flicker noise than saturation region. Still, operation in strong inversion mode (with large Vov and large Vds) would probably exhibit even more flicker noise in saturation region. (...)
How to represent mosfet in triode and sub threshold region. like self cascode transistor one transistor is in saturation and another once will be in the triode region . i want to calculate output resistance and effective trans-conductance of self cascode MOSFET. can any give the brief note about this topic. thank you
Why your cascode transistor alway in triode? Do you have small vdd voltage? I think that there are several solutions: 1. Make Vdd higher; 2. Make Vod smaller (~sqrt(2I/K) ) 3. Use inductor in load - output dc point = vdd
How to affect the design when the mosfet operated in triode region.
Subthreshold (or weak inversion) actually isn't a region of a MOSFET's output characteristic like off, linear = triode, saturation or breakdown region - which are identified by a Cadence ADE analysis, (together with No.3=subthreshold) - but much more an operation mode, classified by the deg
Hi Praveen, Say you made Vgs(500mV) -VT(400mv) =100mv Then as long as your drain voltage is greater than 100mv Your Mos will be in saturation region. for ) to 100mv it will be in triode region. For NMOS: Vds=> Vgs-Vt for Saturation
the sense amplifier is a regenerative circuit. It is as if you're asking whether a clocked comparator operates in triode or saturation.
Hello, I've working on a differential amp with current mirror loads. The issue I'm facing is, I'm not able to get the load (PMOS) to saturation region. Tried varying the W/L and still the PMOS remains in triode. I've seen another 'not-so' normal thing w.r.t to the PMOS loads, when I do the DC operating point analysis using the Analog Design Env
Hello all, I have always designed my current steering DACs with the switch transistors operating in the triode region and to reduce the glitch energy not turn them completely off and have a slight overlap as to not kill the mirror. Lately, I was told by a senior designer to have the switches operate in Saturation..but I am seeing problems... W
I am working through Design of Analog CMOS integrated circuits by B, Razavi. It derives the drain current of an NMOS to be Id = u*Cox*(W/L)* Which I am happy with, and that it gives a parabolic shape with the max value at Vgs-Vth It then goes on to claim if in the above equation, Vds << 2(Vgs - Vth), we have
Hello I am simulating the output range of my op-amp, the output stage is cascode stage which has the nature to drop more voltage, but when I simulated the output range by connecting the op-amp in inverting topology I found that the output voltage is approxiametly rail to rail which mean that there is about zero voltage drop on the output cascode
one thing to add that you might run into, the Vgs - Vth should be lower than Vds if you want to run the transistor in saturation, otherwise you might notice a big jump in drain current out of nowhere and at least now you will know. If its higher than Vds its called triode (linear) region
i wanted to calculate the parasitic capacitance of an nfet_rf mos in Candence softwate, for which i employed the attched circuit in which the transistor is in the triode region; with drain, body and source connected to ground, while a sinosoidal input of 1.5V at gate and an inductor attached at gate to resonate with the gate capacitance (Cgs and Cg
77088 vdsat is very large ,will this cause any problem? For what? For the VCO lock-in? Depends. M6 & M7 both work in strong inversion mode, so large vdsat is normal. M6 correctly works in saturation region, M7 in triode region however, which lowers the loop gain and inserts an additional(
By using MOSFET in a triode region, you can make it as a voltage controlled resistance.
Hi. I want to design a folded cascade op amp in the 90nm CMOS technology, I use some formula to design the opamp but i don't know why the tail transitor at top of the circuits goes to triode region? can you help me to solve this problem? (I upload that circuit that I wrote in the H73467spice program) Thank you.
With such a low gain I'm pretty sure your transistors are not properly biased and some of them are either in triode region or cut-off. For a two-stage opamp you should have at least 60 dB, easily. I sugest you review the operating points in your circuit. After that is corrected, reaching the 80 dB should only require a few changes in bias currents
Hi there, Please take a look at a Li-ion balancing circuit, what gate biasing level should be chosen? The question really is should the PFET be turned on in saturated region or triode region? Thanks in advance. 72483
Hi there, Please take a look at a Li-ion balancing circuit, what gate biasing level should be chosen? The question really is should the PFET be turned on in saturated region or triode region? Thanks in advance.72482
M7, M9 should be in subthreshold , but i dont know how to design it In order to work those transistors in weak inversion (subthreshold) region you should ensure that VGSregion! i need to design subthreshold
... charging and discharging during switching occurs in the triode (linear) region. This not so accurate, right?? It's an approximation of course. But if the switch is well driven into the linear region, this will provide quite a good estimation.
What is the resistance you are trying to obtain and why do you need such an accuracy? Have you considered automatic calibration using a mos in triode region instead of trimming?
Assuming that source of bottom transistor is connected to ground and drain of top transistor is connected to VDD (5V). Using NMOS equations in three regions. 1. Vgs < Vt ( Cutoff ) 2. Vgs > Vt & Vds < Vgs-Vt ( Linear/triode ) 3. Vgs > Vt & Vds > Vgs-Vt ( Saturation) Top transistor will be in saturation region and bottom will be in (...)
plz any suggestions would be appreciated... since i reached a dead end ... thanks -W/L Ratios of MOSFETs are huge for 90nm technology...Check them out... -When you look at Vds(M1) is 350mV<<1.8V Vgs(M1) so MOS transistor is in triode region so gm is very low...Gain is low too... -First, define a proper bias voltages and
Identify the transistors which cannot operate in the saturation region? All of them. why? They either operate in the linear (triode) region, or are "off" -- logic input signal levels assumed, as normal for an inverter.
When you operate the transistor in deep triode region (Vds<<2Veff) the drain current is approximately a linear function of Vds.The linear relationship implies that the path from source to drain can be represented by a linear resistor.This is the Ron.
I am trying to find a q point. There is a body effect, but my vtn is 1 anyways. What region of operation should I assume. Saturation region or triode region? Assuming that your Vgs (gate-to-source voltage) is larger than Vtn, then the operation region only depends on Vds (assuming the basic square-law (...)
Hi, I'm trying to design a fully differential folded cascode amplifier (2 nmos and 2pmos) with pmos input. could anybody suggest a bias circuit? I've already designed a bias circuit but the nmos transistors are in triode region. all the bias transistors are in saturation and the pmos transistors of the folded cascode stage are in saturation too.
You are not showing the bulk connection of your PMOS switch. Is its nwell connected to its source, or perhaps to a higher voltage? Is your VCMP=ON control signal low enough to fully drive the switch into triode region?
... the NMOS fell into triode region, and I obtained only 60dB gain. Apparently, it is very hard to keep both MOSFETs in saturation, especially when the input common mode can vary from rail to rail. This made me confused about the biased condition of the output FETs. ... it would be great if you can help me by explaining or su
Well . . . . . . . . . . BJT amplifier in active or linear region . . . . . . . switching in saturation and cut off MOSFET amplifier in saturation . . . . . . . . . . . .switching in triode and cut off in BJT the region of saturation VCE aprox 0 corresponds to triode region VDS aprox 0 in BJT the (...)
R: MOSFET operated in nonsaturated (= triode) region L: very long MOSFET (W?L) C: gate capacitance against (S & Bulk & D) Diode: the parasitic D-to-Bulk diode (G-S-Bulk connected)