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20 Threads found on edaboard.com: Triple Gate
Hi, all, What are the difference between (0.18um)high-voltage triple gate process and other process (typicallly used in mixed signal circuits)? I have seen dual gate process so that we can double the supply voltage so that we can have higher output swing...and so on... I understand that thicker gate process endures (...)
Hi gurus, Am new to this groups and novice in hardware stuff. I found that If (in protected mode) A20 gate is used to access odd megabytes. and is used to reset the cpu so that we can go back to real mode from protected mode. In another article i read that triple faulting also used to reset the cpu. 1. if present day OS boots at prote
We need to know the range of voltages you are trying to pass. If it includes the negative range, are you sure that your process has triple well capabilities to support it?
basically the substrate isolation. triple well transistors are more isolated. khouly
i mean like(strained silicon) (triple gate mos) finfet) ....etc
Hi everyone, We are using IBM 65nm cmos10lpe process. Our design used a triple-well RF nfet (nfettw_rf). However, when we checked DRC with Calibre, the tool generated the following result: "triple well tie-down rule: must touch RX, which is electrically connected to (RX over NW) through M1" Could you plea
Hi... Has anyone has worked on TAB full bridge DC DC converter where power can be transferred from one port to another port by changing the phase shift of the square wave pulse to the switches of the bridge. I did a simulation but I obtained that power is transferred even when gate pulse sent to all the switches of the bridges are in phase. C
hi is it a must to use triple well process to pass negative voltage? can we just use pmos device to pass negative voltage? i know that pmos device is not good at passing negative voltage, but what is the consequence of using it? for example if i use 0.18 um process and try to pass -12V using pmos, what is the passed output voltage? thanks:)
Generally speaking, If you are using a kit you will find a standard cell for your transistor ready to be used.. If you are making own layout, then here are the steps: 1. First draw the well, for NMOS on single well process then no well exists. If PMOS use NWELL, if NMOS on triple well technology use PWELL 2. Then you need to define the OD
Hello everybody! I have noticed a strange behavior of the "show incomplete nets" command of virtuoso layout XL. This command shows that my Vdd_mycel and gnd_mycel nets are not connected, though LVS reports matching! All other nets are shown correctly as connected. I believe it is not random that the problem is with my power and ground nets of
HI, I AM A MEMBER OF THE TEAM INVOLVE IN DESIGN AND DEVELOPMENT OF TELEMETRY AND TELECOMMAND RECEIVERS, IN THAT CONNECTION I HAD DESIGNED AN ACTIVE tripleR ( HEMT BASED) WITH THE CONVERSION LOSS OF 4dB RESPECTIVELY. ONCE THE CIRCUIT IS TESTED IN NORMAL ROOM TEMPERATURE (25°C), I KEPT IT IN A CHAMBER FOR HOT AND COLD CYCLES ( -30°C TO 65°C),DUR
For the first figure: the body effect is eliminated by a triple well process whereas in the second figure body effect is present Body effect affects the threshold voltage of the transistor; in this case the NMOS. In simpler words a larger gate source voltage is required to turn ON the transistor
At the beginig, device was just a 30V 10A power supply, but when winter comes, I decided to tune up device with rectifier with current regulation. But let’s start from very beginning 1) power supply is based on well known
Not really. A flip flop puts out square waves. If you look at an elementary electronics text book, you will see that a square wave is really made up of sine waves at f, 3f, 5f, 7f...frequency. In other words, the square wave has a lot of energy at the triple of the input frequency, but almost none at the double of the input frequency. To make
Hello, I am trying to use compile_ultra to compile a triple module redundant adder, but the tool keeps optimizing it, transforming in a simple adder. Is there a way to disable such optimizations? Thanks
I am trying to design an op-amp with rail to rail inputs and am finding an issue with the symmetric input stage trick. I am limited to a process with no floating gate and nothing fancy like triple well. I have tried two approaches, one with a simple dual (symmetric) nmos and pmos differential pair and also with a dual folded cascode approach (se
If you have a long run, you want to put those pull up resistors close to the loading gate. That way they act as individual 50 ohm termninations to the 50 ohm line, thereby reducing ringing on the line. If your load was a low impedance, then the total load on any one line would be 50 ohms in parallel with some other impedance, so the total imped
Most 65 and 45 nm processes have dual or triple oxide options along with low threshold and high threshold options on the single oxide option. Multiple oxide layer thicknesses is used to achieve higher I/O voltage capability. Low and high threshold processes are used to trade off speed vs. leakage which is a big issue with deep submicron proce
Can you simplify the circuit even more, so it is just the MOSFET, the 1k resistor and the gate resistor? Connect gate resistor directly to +12V to see if it will turn on. triple check the MOSFET pin-out.
Although a half-bridge is commonly thought of as a totem-pole... I saw one definition, which said a totem-pole is more properly distinguished, as having two or more components which can permit current to flow through all of them in the same direction. Example: triple-input 'AND' gate made from transistors: