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Hi all, PLEASE HELP ME REGARDING tsmc 180nm LVCMOS IO BUFFER DATASHEET THANKS
I want to design a LNA using tsmc 180nm technology.Can I Apply VDD<1.8? If so,What are the disadvantages?My problem is that my dc power is high.
I'm currently working with tsmc 180nm process. I need to draw capacitor layout. Can anyone tell me how can i find the "capacitance per unit area" value.? for using poly-metal1 capacitor.
Ask MOSIS.
Hi all, this is my first time to post a thread here. Got a lot of help from this forum before though! I am about to design a chip with tsmc 180nm process. We have an old 180nm PDK released in 2004 which runs on IC5. A couple of days ago we got the new 180nm PDK supporting IC6, but some of my work has been done using the old (...)
I need this library for my project which is design and simulation of an analog,mixed-signal VLSI Oscillator for MEMS resonator. I went to MOSIS web, unfortunately there are some rules which I need to register under my university. I do found one tsmc 180nm technology, but that's for HSPICE not PSPICE..help me.I really need this library and I try to
Hi. I am wondering if it is possible to use a resistor 1.8M ohms in tsmc 180nm. Is it too big? Thanks.
Dear Scholars How to include tsmc 180nm technology file in Cadence to use in Spectre, Assura and etc? plz help me. Thanks in advance
hi friends iam using leospec for my vhdl leo spec i have one sample library scl05. i have also got another technology library from tsmc which is 180nm. i tried putting the file in modgen/data folder of leo spec. but it still is not displaying tsmc018 in the leospec tool, but when i type command related to tsmc018 library, (...)
Hi all, I am designing for the tsmc 180nm. What is the maximum VDD I can use? If I make my transistor width to 250nm, can I increase my VDD? or would I have to use the tsmc 250nm process for that? Generally, if I use tsmc 180nm, but I create some of my transistors as L=250nm, then I can basically (...)
1. tsmc 180nm tech nmos transistor has a mobilty of 265cm2/v-sec where as 130nm nmos predictive tech model file shows mobility of 0.05..cm2/v-sec. such a large variation in mobility is it possible as we go down from 180 to 130nm? 2. if anybody has design procedure for simple 2 stage opamp (90nm) or any related materials pls forward it to [emai
Hi Kumarn, You will get exact number from tsmc PDK manual. see Thomas Lee took width of 437 um for 0.25 or 0.6 um process for which he has design CMOS LNA. But, your process is 0.18 um so, there must be some maximum limit which you can come to know from Design PDK manual.
Hi everybody I am new to layout design. I need some sample layouts at tsmc 180nm. sometimes I face simple questions that a good sample layout can help me. Could anyone help me please. Thanks
Dear All, I m using tsmc 180nm Process. I'm using nmoscap pcell in layout view, when i place two same instances of same size capacitor, i m getting an error " Label short" and saying that PCELL instantiation cell "pmoscap" (unique cell name "pmoscap_PC2") from library "tsmc18rf" has the following property. L=10.84u W=10.84u. There is no (...)
is there any difference between gpdk 180nm and tsmc 180nm model parameters? Thanks in advance..
Hi I have used two methods to get L and Q of an on-chip inductor in tsmc 0.18um. 1) Using the inductor in tsmc's ADS PDK (from palette in schematic view) 2) Using the exact same structure of the above pcell and simulating it with Momentum at 1.8 GHz, L and Q got from above methods are: 1) L= 560 pH, Q= 9 2) L= 618 pH, Q= 15 I am quite
Hi can anybody please send me tsmc 180nm CMOS model file, which will work on HSPICE. Thanks
Hi, I am using tsmc 180nm process for Op-amp designing. I wanna use only one power supply of 1.2V. My question is, (1) Can I use 1.2 V as Vdd power supply in 180nm Process or I can use only 1.8V as Vdd. (2) Is it true that 1.8 V is maximum available power supply in 180nm process and I can use a power supply less than 1.8V.
That is true. For power planning, you must know your process spec. The max current per 1um. Always for tsmc 180nm is 1mA. But you need to leave margin. You can estimate power in netlist level simulation. Then , calculate the average and peak power. For power connecting, different people have different style. Some one prefer large width of power
Hi.. how we can calculte the Cox of CMOS using the parameters of Pspice CMOS model tsmc 180nm . thanx
Dear manissri : You can design 1Gha ADC by hspice, It is coorect for use tsmc RF model . Do't need to run S-parameter, Just use run ADC method . like SNR.SFDR , It is ok.
Hi, I am trying to create a simple combinational gate layout in synopsys cosmos layout editor using the tech file of tsmc 180nm provided in Oklohama State university's OSU SOC kit. But i am unable to find a contact layer (active contact) in the layer panel. There is a menu to create contact but the only contacts it shows in the pull down menu are
Hi, can you please send me tsmc 130 or 180nm LVCMOS IO CELL DATASHEET, if you have it. thanks
Can any one say what is an artisian tsmc library in synopsys tool?? We are having tsmc 180nm rf lib and whole package of UMC 180 Mixed mode library. but we are not having the digital library?? Is this artisian lib can be used for whole asic process even with cadence tools??? Does UMC having digital lib?? Thanking you
hello!! i m new to full custom design. i m supposed to design a 4-bit counter that should be able to operate at 3.5GHz on schematic and 2.5GHz on layout in tsmc 180nm technology. plz give me some guidelines and suggest some material to study..........
Hello friends on physical lavel any one can tell me the exact diff. between these two process.
I can give you this much from the tsmc CL018 documentation: "The information contained herein is the exclusive property of tsmc and shall not be distributed, copied, reproduced, or disclosed in whole or in part without prior written permission of tsmc."
i want to simulate a circuit in hspice with tsmc 180nm process. in this ciruit there is a vertical substrate PNP transistor. how i can present this transistor in netlist of hspice? tnx
Hi, in CMOS processes like tsmc 180nm often the minimum channel length of mVth and native Vth transistors is much larger than for normal NMOS or PMOS transistors. I need a native Vth NMOS with good RF performance, i.e. low Cgs and L. Is that possible, it would hurt the DRC and would have large leakage current (no problem in our case), but wha
Hi everybody I want to know what does the rf suffix at tsmc 180nm library mean (tsmc18rf)? thanks
I've deisgned a LNA with two 10nH inductors(tsmc 180nm).what do you think about area of chip and it would be practical with these inductors?what's the maximum value of inductor in tsmc 180nm?how about the disadvantages of big inductors for lna?what is the value range of inductor in tsmc (...)
let me tell you in detail i m working on cmos adiabatic logic and i want to use tsmc 180nm technology. can plz guide me tht do i hve to copy the model parametrs from . and suppose i have to use w=720n and l=180n then what value should be of As, Ad, Ps, Pd. i will be very thankful if you can provide me the 180nm parameters for pmos and n
Hi Hbeck, I'm doing a project similar like you, but I dont know how to add IO PADs in VHDL, I have the library tsmc 180nm (standar_cell.lef and pad.lef). I'm working in encounter too. I need to Synthesize with RTL compiler too. I know that I need to create a wrapper for the IO pins but how to use PDO02CDG_33??? P.D. fo
Hi, I was succesful in implementing my research usign tsmc 180nm technology with mentor graphics tools, and I'm trying to work on 45nm PTM technology but kind of stuck with how to start. I would really appreciate if anyone can help me with this. -Ravi Tej
Hi all I am designing LDO using tsmc 180nm, VDD=1.8v, Vout=1.6v (200mV drop out). I have trouble running load transient response. If I connect output to a voltage source to generate load current (see attached file) the output transient very good. If I connect output to current source the spike up and down are quite huge (~400mV). Could any
Designing single stage Operational Trans conductance Amplifier for bio amplifier for recording the(Action potential and local field potential) neural signals using tsmc 180nm technology. Design:-The design of OTA is shown below. we have to determine • The transfer function • The required width and length rati
how can we change some parameter in design compiler library. i use tsmc 180nm plz help
hi all i have tsmc 180nm library for synthesizing my circuits. how can i build a library which has just nand cell instead of and ,or , xor cell. actually is it possible to create a circuit just with nand gates. I want to change only the gates not the flip flop or buffers . tanx plz hellllllllllllllllllllllllllllllllllp
Hi All, I'm trying to make a DAC with less area using MiM Capacitors Basically Split DAC uses less area than a binary weighted capacitors since for a 6 bit split DAC, only area of 2 3-bit DAC are required, drastically reducing area. Split DAC (6-bit DAC): 1C 1C 2C 4C 1C 2C 4C Binary Weighted DAC (6-bit DAC): 1C 1C 2C 4C 8C
Task is to design a folded cascode with single ended output Conditions required are: Technology tsmc 180nm technology* VDD 3.3 CL ≥ 500fF Current mirror ratios ≤ 20 Power Dissipation ≤ 3mW DC Gain ≥ 80 dB UGB ≥ 600 MHz Phase margin ≈ 55 degree CMRR 
How accurate is the leakage models of both core and high voltage devices in the tsmc 180nm process? In my simulations, the numbers are very small and of the order of 10s of femto-amps on a node with just two small drains connected to it. But silicon shows an extra current in the order of 100s of pico-amps unaccounted for. I was not expecting
Hi, As I have already mentioned that I have designed 4-stage NGCC opamp in tsmc 180nm process using Cadence and I got all my specification except CMRR. When I have simulated my opamp I have found that CMRR curve increasing with frequency but it should be decrease as frequency increases. I am confused what is exact problem ? I have attached my CM
hi all, i urgently need 180nm tsmc CMOS Spice AMS parameters for all process corners (TT,SS,SF,FS,FF), thanx in advance............... ravi
is the model same as the model provided by tsmc?
You can use the hspice to build your own model files for spectre if needed
i am using the cadence generic process design kit, and i think it's adequate for layout and simulations. they have the 90nm PDK as well as the 180nm one. As for tsmc, i am not too sure how you can request them.
can any body provide me the tsmc hspice RF 180nm model file if u have any link please send to me so that i can so that i can download this model file. regardsds
What are the values of K = uCox for both nmos and pmos in 180nm ? Thanks. Find U0 and TOX here in the MOSIS WAFER ACCEPTANCE TESTS. u=U0 ; Cox(180nm) = ε0*εr(SiO2)/TOX = (8.854e-12 F/m * 3.9) / 4.1e-09 m = 8.42e
Try Dis-- * MOSIS PARAMETRIC TEST RESULTS * * RUN: T46U (MM_NON-EPI) VENDOR: tsmc * TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns .MODEL nmos nmos ( LEVEL = 49 +VERSION = 3