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16 Threads found on Tsmc Esd
Hi, all, tsmc won't provide 0.13um CMOS esd library, is that true? if so, then where to get a library for the I/O PADs? Thanks in advance, abcyin
I understand you are talking about tsmc I/O structures. If you have little more time you could design your own I/O. Schmitt - no you do not need to have it but it is very good idea. If you have multiple power supplies you should have esd protection between them - unless it is a test chip and you are aware of esd risks.
Hi everybody, In tsmc DRM , I have seen that minimum spacing between contact and gate at source or drain of transistor(RC clamp) should be 0.15um while for normal transistor it is 0.1um . What would be the reason for asking more spacing for esd devices. Thanks in advance.
Hi I will be fabricating a chip in tsmc 0.13um. Chip has RF front end working at 3.1-10.6GHz. This is my 1st tape out and I would like to know all the things I should be careful off before fabrication. I have done DRC and LVS which is clean. Also I have done RLC Extraction and post extraction simulations. What other things I should be doing? Shou
Hi , I am planning to design some pads in 0.18 um tsmc CL018 HV. Pad types that i need: VDD PADS, GND PADS, Digital I/O, Analog In , Analog Out pads, High Voltage Pads. Does any one have some design guides or documents that you can share with me ? :) Any advice is also appreciated. This is for a research chip, so esd is going to be min
Hi We have worked in the past on HV technology (tsmc) with esd/IP provider from Belgium. Received different options and clearly outlined comparisons. Several products on the market with their help! They used to focus on working based on their own IP blocks but the account manager informed me that they now offer consulting (and testing) servic
As far as a know this is true. I heard that the reason behind this is that tsmc doesn't want to be responsible for any esd problem your circuit can have, in other words, they don't want people complaining about their circuits not working due to their esd pads (when this can not always be necessarily true), but since there is no way of (...)
hi everybody! I was puzzled by power-on-sequence problem now. I used to do a project using smic 130nm logic technology, using its standard io lib. SMIC demand io power first, core power second sequence. The reason behind this rule is esd Diode between io power ring and core power ring in IO Cell circuit. But, When I turn to tsmc tech, I fin
The size of the pads will be dependant on the process. For 0.35u devices tsmc we use 80x80 pads. These are made from an 80x80 metal3/4 plate (esd under) with vias around the perifery. The design rules you have will tell you what the requirements are for creating a pad. Passivation is also required again tech dependant this would normally be 70x7
First, you make sure that your device models include esd model ? Becasuse commerical models like tsmc dont's provide esd models in their device. It is diffucult to simulate the esd performance in design phase.
It is better to get it from tsmc. Its IO cell proves good esd and esd under pad is very area-saving.
For the Power-rail esd Clamp circuit(made by R,Moscap, PMOS,NMOS) for the LNA design, I can not find the paper about the size. I am so wondering the size of the Clamp circuit(tsmc 0.35um Process). Thank Chris
We are using several of tsmc's processes 0.35, 0.25 and 0.18. We had to design our own pads or buy pads from a third party. tsmc design kit did not even have PCELLs for the ballasted devices. We had to manually draw them or design our own PCELLs. DrProf
Dear All, In tsmc 0.18u process, how do I connect the dummy transistors' gates to vdd or gnd? Is direct connection feasible? ( i think there would be an esd issue here ) Concerning soft-pulls, how can they be implemented? what are the constraints/design considerations for them? Thanks...
My previous design has a pair of source follower output pins. Unfortunately it's esd immunity in human body mode can only pass 1KV. The experiment result shows that the nmos to vcc fails. Is there any one to give me a guide . Our design uses tsmc 0.35 polycide, and the nmos follows esd design rule in addition that it's size is only 100um (...)
We use tsmc 0.18micron 6 Metal 1 Poly (1.8V/3.3V) technology.We currently use bond pads with a metal pads defined on all 6 metal layers under the passivation bond pad opening. These is a number of vias linking these metal pads together. The idea is to remove the metal pads from layers 1,2,3 or even from layers 1-5,i.e. to leave the top metal pads