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28 Threads found on edaboard.com: Vertical Pnp
I have designed products in a Nsub, Pwell technology. It was the only one of maybe 20 CMOS flows and subflows in our process portfolio (at the time) that was this way. Construction of this sort gives you a NPN vertical BJT parasitic about the NMOS, rather than a pnp parasitic about the PMOS. Tends to be higher gain (esp. if you do not make the Pw
The NWell should be reverse biased and the normal junction leakage will always be present. However if you manage to take the PMOS source above the well potential the vertical pnp may turn on and multiply the S-B injected current with some S-sub current @ gain (probably not much gain, but still). Drain hot carrier / impact ionization might also incr
Hi all: Yes, I didn't have any other bjt choice for bandgap design. Because there is a terminal of a vertical pnp is connect to substrate, so I don't want substrate noise to interference the bandgap voltage directly. mpig The process provide a vertical pnp where you could not conncet the collector to any pot
Given a choice I'd pick NPN because they almost always have better hFE and parasitic resistances even in complementary vertical bipolar flows. In cheap common JI technologies the choice is liable to be opportunistic and the topology, or specific application of the device, constrained. For example you may have the outstanding choices of either a
Hi All, I saw a vpnp model in a circuit, but have some questions about its parasitic pn junction. Could anyone advise how can we connect this pn junction in a circuit? Thank you! 89824
In a classical bipolar IC process, multi-collector transistors can be only implemented as lateral (pnp) transistors. In vertical (NPN) geometry, individual transistors will be used anyway. The same applies to double-diffused pnp transistors in recent bipolar processes.
How do you build a p-n junction : p-plus in n-well sitting on substrate. How do you build a vertical pnp : p-plus in n-well sitting on substrate. Wait ...
hi guys, the beta value for pnp lateral bjt is 3 for typical. if i want to make very accurate bandgap reference, this is far too small. vertical NPN bjt made out of N+ bury layer is much better, and is better for BGR. An accurate BGR needs to trim very accurately, so i need EEPROM option to store the trim bits. however, for MPW runs avai
Hello everyone, I am currently designing a bandgap reference (BGR) circuit in IBM cms9flp. Using Assura for LVS the circuit is shown to be correct (layout schematic match, and no extraction problems) When I use Calibre the result is Correct again, there are no extraction problems, BUT there is an ERC error. The description of the e
Where can I obtain the layout/cross sectional view of a lateral NPN/pnp and vertical NPN/pnp. S. the PDF below. What are their advantages (lateral over vertical) in terms of circuit response. Lateral transistor usually has higher beta than vertical.
i want to simulate a circuit in hspice with TSMC 180nm process. in this ciruit there is a vertical substrate pnp transistor. how i can present this transistor in netlist of hspice? tnx
This is a guess, but is this a vertical pnp where the substrate is used as a grounded collector? This fingered area may be p+ connected to ground.
I got a a vertical pnp BJT Model from a foundry. but i found the parameter 'isc=1e+11' , it is the base-collector saturation leakage current value. i think is too large than the normal value. what do you think about the value?my friend. thank u! some other information for the BJT :emitter area = 10um*10um 0.35um 3.3V CM
In std. CMOS technologies you just have vertical pnp transistors available, and the base width is the difference between n-well depth and S/D p+ implant junction depth, i.e. only process dependent, not manipulable by design. Dedicated analog CMOS technologies also allow for lateral BJTs, but here the base width is limited by design rules, enabli
This is a layer of poly, and I don't know exactly what this graph stands for. I think it might be a bjt. Is it a pnp or NPN? vertical one or lateral one? And also what's the B,E,C. Your kindness help will be appreciated.
Hi, I'm designing a Bandgap in TSMC18 process. Simulation shows "beta" of vpnp is quite small, about 2.5; "beta" of npn is about 23. It seems I must use npn instead of vpnp? Why "beta" of vpnp is so small?(I've heard that "beta" of vpnp is bigger than lpnp, which is no bigger than 5) Why so many designs (...)
THANKS MSSN How about 1v vertical pnp device or 1v mos devices? how much maximum supply these devices are supposed to handle safely ? Can I operate them with any supply ( say 2.5V or 3.3V) ? Thanks in advance.
Hi everyone. I'm looking for spice models of vertical pnp BJTs implemented in CMOS technologies usually used to build voltage references. I also need info related to the layout of these devices (how big should the be??, how do I match pnp transistors??, etc)/ Thanks for your help, diemilio
it is depend on what process. if you use CMOS process ,then the pnp (vertical of lateral) are very weak transistor . but the BiCMOS process is not like this.
You cannot isolate vertical and lateral p-n-p. Actually you get two-collector p-n-p: one collector connected to GND (vertical p-n-p) another collector (lateral) will be floating, but the output voltage cannot be higher than Vbe (Vec>0). And efficiency or BN of the lateral p-n-p will be very low. I don't know where you can use such transistor.
thats the vertical pnp transistor in bandgap reference circuit. I checled the connections and everything is perfectly ok with the connections/terminals.
Hi,everyone : "the maximum quiescent current was higher than expected by simulations for the effects of the large voltage drop across the Schottky diode on the parasitic vertical pnp transistors inherent in the PMOS structure . This can be improved by increasing the diode 's area or placing heavy dopant buried layer und
In bipolar technology, the NPN is usually 10-100x faster than the pnp unless a special vertical pnp process is used. Making any circuit out of all-NPN means it's operation is not limitied by the slow speed of lateral pnp. Or in other words, you can probably derive the speed of your circuit by finding all the places you (...)
This actually goes back to the pre-1970 era with its 1 MHz gain-bandwidth product op amp limit. Back then the masking step used contact masks which produced low yields. The extra diffusions to produce a vertical pnp would have reduced the yield to unacceptably low values. Also back then the lateral dimensions were around ten microns.
The varactor is normally reverse biased, so this configuration is OK for a varactor. However for a forward-biasing diode, you'd need N+ buried layer to prevent significant vertical current. Since the substrate is p-type, it would be grounded. Forward biasing the pn junction you've shown above would create a vertical pnp. You would get (...)
Maybe you can use channel pnp with B shorted to C, or a PMOSFET with G conneted to S and B connected to D. But it has a parasitic vertical pnp transistor.
Ideal opamp can be modeled by vcvs in cadence. Precise models should be obtained from foundry. But if you just want models for studying, below is a pnp model for vertical pnp in standard CMOS technology. .model pnp pnp +LEVEL = 1 IS = 2.23E-17 BF = 2.72 +NF = 1.01 (...)
suppose is p-sub, n/p-epi in bipolar and bicmos function. I don't know if I really understand what you are trying to say but if you are asking what is the n/p epi's function in your stated stack up, for an npn transistor, the n-epi will serve as the collector region of the device. For a substrate vertical pnp and a lateral pnp, th