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54 Threads found on 180nm Process
i should download the UMC 180nm library.Right. If i should download this library where i cand found it taking acount that i shoud use the UMC 0.18 ? m RF CMOS process, models N_L18W500_18_RF.Ask UMC.
As shown in the bellowing figure, I plot the intrinsic gain of three nmos transistor with 180nm process. The Vds of the three transistors are set to 0.75V, and then I sweep the Vgs voltage of all of them from 0 to 1.5V. (The Y-aix is the intrinsic gain, and the X-aix is the Vgs.) Their size are 5/0.5, 5/0.5, and 50/10, with the um unit. From
Sorry, I wrote this informations the previous post. So,I couldn't think that. I used 180nm Cmos process and apply the folded cascode LNA with Mds Technique (modified derivative superposition). The center frequency is 5GHz. I import the spice netlist in Awr, Level 49. I obtain some values but the gain is very odd. So I think t
Dear all I have a question how to convert a circuit from old technology to new technology. Let say I have a bandgap design using 250nm technology and want to design to 180nm. How I can do it: Do I have to design from beginning using 250nm schematic?. Assume both process bandgap take out 1.2v Thank you
Hi, Using the square law model, one can derive the distortion of a differential pair using NMOS as: HD3 = 1/32 (vi/Vov)^2 I successfully used this approximation for an 180nm process and it was still reasonably accurate. Now for a 28nm process, this formula seems to be unuseable. As example, I use vin=1mV. Vov is not very well def
I've never seen this (I have yet to go below 180nm on any real design job) but I would suggest you open up the rules deck and see what they're after, if the docs don't give you enough to go on. I could conjecture about things like non-ortho geometries, lonely vias and the like, but it's really your foundry's call and I'm sure they're not mine.
Hi, In my project I am working on IEEE based .topic is ANALOG IMPLEMENTATION OF A SIGMOIDAL FUNCTION USING CMOS IN 90nm TECHNOLOGY but we are trying to implement in 180 nm cadence. concept is that they are following is current is the input and voltage is output at the same node as shown in paper and i
First of all, how can you know "the current in the Pmos is reversed so the tool is rounding off the -ve current value to 0", have you checked the pmos leakage current in accumulation mode. Or checked the leakage current of the nmos? Which nodes are you using? According to my experience, the leakage current for older CMOS process (>= 180nm) is extr
Standard core voltage for a 180nm process is 1.8V. Usable voltage may range from 0.9 to 2.5V, depending on the foundry's specification. It does not depend on any model type nor EDA tool label.
Yathin, the techRuleSets and pvtech.lib files can be created by you..Generally it won't be supplied form the foundry. however you can find the pvlLVS.rul and pvlDRC.rul files in your Cadence Database. For 180nm process, the DRC and LVS rule files will usually be placed in the Assura Directory. So browse through your Cadence Database for "Assura" di
You need to check a design manual for this process. The nominal Vdd for 180nm is 1.8V but for some I/O devices a standard is 2.5, 3.3 or 5V. This 2v or 3v could also means threshold voltages.
(1) Can I use 1.2 V as Vdd power supply in 180nm process or I can use only 1.8V as Vdd. You can use 1.2 V as Vdd power supply. (2) Is it true that 1.8 V is maximum available power supply in 180nm process and I can use a power supply less than 1.8V. Depends on availabl
When we talk about 90nm process, what do we mean by this. Does it mean that minimum channel length (Ldrawn) is 90nm? or Ldrawn is 180nm? In attached image from a journal paper , author is referring to 90nm process, but has mentioned that L=46nm. But previously we knew that according to lambda based rule, minimum channel length must be twice l
The technology current (t.c.) depends slightly on temperature, s. e.g. this curve from D. Binkley's book, p. 59: 103839 This t.c. is given for a similar 180nm process (fab not named). At room temperature the t.c.≈0.6?A for NMOS transistors, for PMOS it is a factor of 3..4 less. t.c. = (Id / (W/L)) / IC , w
Hi, Can anyone share with me mismatch models for umc 180nm mixed mode, regular vt process. Or, at least if anyone could tell where or how to generate or find (in case it is already included in the umc package), that would be of great help. In this regard, I would like to mention that I am trying to run a Monte Carlo sampling, to make some ana
It's from Atmel. Sorry, no. It's company confidential, signed by an NDA. Hope for your understanding. Anyway: it doesn't disclose more details for understanding the context. The published data are just the result from silicon extraction measurements on many wafer lots. Hi erikl, Yes, I got ur poi
10fF unit cap in a 180nm process tech. actually is a very low value: all I know (and realized) in this tech. had unit caps between 50 and 150fF. With 10fF unit cap - even with a low input cap comparator - you'll always have problems with the parasitics, fighting against required accuracy resp. resolution - at least for a resolution (1 ou
Hi, I need the capacitance (MOS capacitance , the node connect to bit line ) value of 6T SRAM cell to calculate power. The process 180/40/28nm of any FEB is fine. Please help me. Thanks a lot. John
hi, I am in the process of designing a DPLL through cadence(180nm process) . I completed a 200mHz center frequency VCO for a PLL using a current starved oscillator. Now i am trying to design a DPLL based on a 2.4GHZ balanced NMOS VCO. So far i wasnt able to generate any oscillation and i am starting to think that i am missing something (...)
Hi all... Please suggest me the manuals that help in doing process corner simulations in Cadence Virtuoso Analog Design Environment.I am using GPDK 180nm technology. Is there any manual exist to learn how to perform process corner simulations in cadence.If so please let me know and the model libraries required for that?????
Hi, I am working on a low power design. I am looking for a pmos transistor with 0.5V Vdd and Vth. I'll be giving the i/p to the body of the pmos such that the Vth of the transistor will reduce. Can someone suggest where i can find a suitable tech file to use for simulation in cadence? Thanks
Agree with jimito13 : MM are the std. MixedMode transistors, well characterized for LF analog applications, whereas the RF transistors are specially characterized for RF frequency applications, s. e.g. this header of a 180nm RF SPICE model file: 66816
Gate N+ to Nwell cap seems OK to me. But I can't find it in my cadence umc 180nm, 90nm and TSMC 90nm library. Does it require fully custom design? Or I can find it in other libraries? If your PDK doesn't contain such a cap, you could easily create it by full custom design, s. the cross section figure below i
Who is correct? Both probably. In the 180nm process I'm working in now the Vt increases for shorter channels. I seem to remember a process where Vt went down as channels got shorter but can't say for sure... it seemed like it went down for one MOS type and up for the other. DIBL is a lowering of Vt with an incr
Hi all, this is my first time to post a thread here. Got a lot of help from this forum before though! I am about to design a chip with TSMC 180nm process. We have an old 180nm PDK released in 2004 which runs on IC5. A couple of days ago we got the new 180nm PDK supporting IC6, but some of my work has been done using the old (...)
hi m working out with my cadence tool.... while m analysing, i would like to know the behaviour of lamda with aspect ratio in 180nm technology both for pmos and nmos..... could someone help me???????
can any one help me with a OTA circit to achieve the following specifications... process 180nm CMOS Supply 1.8V DC gain 80 dB UGB 500MHz Phase Margin 50 degree Current consumption <4mA Settling time 12.5 nS Output swing 60
I need to design a OTA with the following specifications: Parameters Specifications process 180nm CMOS Supply 1.8V DC gain 80 dB
Either Al (for processes >≈ 180nm) or Cu (for smaller process sizes). Higher layers where the resistance is less are thicker.
Hi, On finding the W/L of the transistors, how to decide on the value of L....(for 180nm tech)? What are the factors we must consider in fixing L... ? Can anyone please help me out in it?
What are the things a layout designer has to care when working on deep sub-micron technology(32nm, 45nm etc) compare to older technology(180nm and above)?
Depends on your accuracy requirement. Here's my suggestion: I'd start with L ≈ 5Lmin , e.g. L=1?m for a 180nm process. Then - if you have no area restriction - use X = n?(n+1)? = (n(n+1))? , e.g. X=36 for n=2. Then you get M1, M2: W/L = 9/1 M3, M4: W/L = 36/1 M5: W/L = 4/1 If you have to save real estate, use
Technology node (180nm, 130nm, 90nm, 65nm, 45nm, 32nm, 22nm, etc.) is defined as the lowest metal (metal 1) half-pitch (i.e. metal width or metal spacing) for the DRAM version of the process. Gate length or channel length is usually much smaller than the process node dimension (for example, in 90nm technology, the gate length is about 70nm).
Effective channel length will be close to 130nm if the drawn L is 180nm due to lateral diffusion of the extension implants beneath the spacer.
Dear All, I m using TSMC 180nm process. I'm using nmoscap pcell in layout view, when i place two same instances of same size capacitor, i m getting an error " Label short" and saying that PCELL instantiation cell "pmoscap" (unique cell name "pmoscap_PC2") from library "tsmc18rf" has the following property. L=10.84u W=10.84u. There is no error i
That was the price for the 35V LDPMOS. And still with Lmin=2.6?m in a 180nm process!
I'm currently working with tsmc 180nm process. I need to draw capacitor layout. Can anyone tell me how can i find the "capacitance per unit area" value.? for using poly-metal1 capacitor.
Thanks every 1, Here is the root, I tried 2 design a simple CS amp with 100nA current using 180nm process and land up in W
Below pls. find an anonymized Diva/Assura ERC rule file for a 180nm 6LM process:
Hi everybody I have 2 questions: 1- How many metal layers is available at 180nm technology of TSMC? 2- Is there any restrictions on the number of metal layers to use? Thanks
What are the values of K = uCox for both nmos and pmos in 180nm ? Thanks. Find U0 and TOX here in the MOSIS WAFER ACCEPTANCE TESTS. u=U0 ; Cox(180nm) = ε0*εr(SiO2)/TOX = (8.854e-12 F/m * 3.9) / 4.1e-09 m = 8.42e
i want to simulate a circuit in hspice with TSMC 180nm process. in this ciruit there is a vertical substrate PNP transistor. how i can present this transistor in netlist of hspice? tnx
What are the resistor options available in a standard 180nm CMOS technology and how the are modelled? Thanks.
Hi, Can anyone advise me on any available good 2.4GHz RF IP's out there.. i'm looking for an IP in the 180nm process that i can integrate on my ASIC.. Thanks in advance
Hello friends on physical lavel any one can tell me the exact diff. between these two process.
Hi, thanks.. I want to do it alone. If i search through the net i am getting only i2c, uart kind of things. i have enough knowledge on frontend and backend, even we have good resources(tools :cadence,mentor, synopsys, 180nm, 130nm process libs are available for me) in our lab. Even i have enough time.. I can take it through the whole ASIC Flow
Hello everybody! I'm trying to simulate fuse for 180nm process using CFD software. Fuse is a piece of Al wire created with top metal and passivation opening above. I apply power dissipation to it and calculate time-temperature chart. The problem is that I can't determine the point when my fuse is blown up. Any solutions on this? Thanks
hi,friends at prsent, we have a ASIC project using SMIC 130nm process, the ciucuit have many RAM (NO.200 capacity.4K), someone can give some advice in FE and BE design considerations? thanks! we carry out 130nm ASIC design firstly. Does the 130nm design and 180nm design have great difference in IC design? what is the difference between the
It is dependent on technology node. For typical 180nm technology node, resistance is of the order of 60 ohms, ground and coupling capacitance of 200fF and inductance of 4nH for a typical interconnect length of 2.5mm. These data's are not direct from foundry. Using predictive models, we can found the parasitic values.
generic 180nm process of TSMC is double well process that's mean there is no vertical pnp., L-pnp is the parasitic pnp at all. so the beta is not larger than vpnp. also l-pnp the collection is p-substrate. Base is nwell. no npn provide at all. because there is no isolated pwell unless use tri-well process. BTW i don't (...)