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30 Threads found on Area Hspice
I model a photodiode in a hspice simulation. It have a Capacitance and a DC current source. But I dont know how much PN area=Capacitance value and it reverse bias. How can I calculate the area? Thanks.
I am in doubt, what results will be more accurate with AD,AS,PD,PS as zero or non-zero value. You better use the right area and periphery values - if available from layout - otherwise use the estimations from given below. These are necessary to calculate good (i.e. as correct as possible) capacitance va
RC extraction from a tool like Synopsys Star-RC will spit out an hspice SUBCKT netlist with Resistances and capacitances corresponding to the different layers in your layout in addition to the transistors. It might include the area/perimeter of your transistors but the best estimate of your net area should come from looking at layout (...)
I think the problem is u should also give drain area, source area, drain perimeter and source perimeter if u don't provide those then it will not work
I can not find anyone to help me? I would gain with the software, but not more than 200, an exclusive area of ​​the MOSFETs 7 and 8 are not saturated? Ntlystshv can write and draw in 1400 did it gain technology 0.5u?
AS is the area of the source. PS is the perimeter of the source. Ditto AD for the drain. Keith
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Hi, all I get a RES model file like this way, and I want to use this model for spectre sim. Since I'm a newbie in hspice area, I have the following questions. 1.which symbol I can use to call this model in analogLib? How to use it? 2.Should I need to change this RES model to 2-terminal model? How can I change it? 3.I use SPP convert (...)
tnx for you help But I mean how i write the netlist? Is it correct to write like an ordinary bjt transistor? Like: Q(name) NC NB NE Model <area> Or it might be different? if it is different, how I must write?
how can i calculate the area and premeter of drain and source(AS and AD and PD and PS) of this mosfet for using in hspice? If you use a PDK, they will be calculated automatically during netlisting. From a layout, the physical dimensions are extracted to create the appropriate netlists for LVS and postLayout simulation.
Hi, I am working on a Mixer and LNA postlayout simulation. The layout includes the bonding pads and some decoupling capacitors. The total area is 1sqmm approx. I am using hspice RF for the simulation and the commands HB to obtain the P1dB, IIP3, and NF. hspice will run until the following message: hb residual = 5.656854e-001 (...)
Hi all. I am new in this area and not that familiar with the design flow and the CAD tools. Can someone please just point me in the right direction as to what I need to do in order to simulate a synthesized (with Synopsys) Verilog netlist in Cadence with hspice or Spectre? I need to perform a transient analysis. The Verilog netlist has component
Hello everyone, I want to go from hspice netlist to Layout and want to calculate area. Could anybody tell me please the exact flow (means procedure) & tools required in that flow. Thanks & Regards SKamthey
hello, i want to see the effect of random parameter variation (parameters like width, tox etc) on gate delay/power/area etc... but this randomness is correlated spatially... meaning, i want closely placed transistors to vary similarly... i know how to declare gaussian variables in hspice... .param width_param = gauss(mean, variation, sigma
i designed a digital circuit,but i don't know the way to evaluate the power and area in hspice , so i have no idea to compare it with the specification,i know the speed can used the delay time to evaluate ,but how about the power and area of the circuit? is the numbers of the MOS can be used to evaluate the area?can anyone (...)
user raptor1981 wrongly posted reply to report system: hi, AD is the drain area of MOSFET . AD is not related with the diode area . This can be observed from the model file of AMS , here there are specific models for all elements . For further details please refer to the website ( search by ams )
try to change the drain and source area and perimeter with the same MOS size and compare results
jacobliu, I think what ambreesh said, is that normally when we use BJT in spice model, we have already restricted to the categories the spice model can provide. Normally, it may have emitter area of 5x5, 3x3, 10x10, and they are all being characterized by the foundy and the layout is also fixed to use, so we can't change and if change, the model
The photodide is basically a capacitor that would hold charge. Calculate the capacitance of the junction of the light collecting area. The capacitance value is given in the model files. Next while simulating do the following make Gmin as 1e-18 rat5her than the default value which the simulators use of 1e-12. This is for the reason that the cap
Hi in hspice manual: IBE (amp) Reverse saturation current between base and emitter. If you specify both IBE and IBC, simulation uses them in place of IS to calculate DC current and conductance; otherwise, the simulator uses IS. IBEeff =IBE . area . M IS (amp) Transport saturation current. If you specify both IBE and IBC, simulation us