Search Engine

99 Threads found on Avalanche
SCR might stay latched on, probably a bad choice. An "avalanche rated" MOSFET might solve the problem cleanly, depending on the stored energy. Should be app notes / selection info for any such parts. A "catch diode" that returns overshoot energy to the supply could also do the job, less dissipatively than the TVS (TVS will have a Joule energy pe
i try to simulate an avalanche photo diode by silvaco atlas. how can see the dark current and illuminate current? if i need to use another solving method help me please. region num=5 material= InP y.min=2.3 region num=6 material=air y.min=-0.3 y.max=-0.1 electrode name=anode material= aluminum x.min=16 x.max=19 y.min=-0.3 y.max=0.1 elec
To understand about saturation effects, we should know the core type and flux in regular operation. A push-pull transformer without any clamping or snubber might drive the MOSFET into avalanche breakdown in regular operation. Inrush current during output capacitor charging will cause respectively higher avalanche energy which might be sufficient
Xenon flash tube are high pressure discharge lamps resulting in very short ion free path, and the electrode shape doesn't promote avalanche multiplication as in a Geiger-Mueller tube. Only if a single particle could generate a complete ionized path along the tube, it might trigger a discharge at voltages considerably below the self-trigger thres
I don't know how you would use this in a bandgap circuit, but a zener diode combines two effects: zener effect and avalanche effect. One has a positive temp coefficient, the other a negative temp coefficient. So according to Wikipedia: In a 5.6 V diode, the two effects occur together, and their temperature coefficients nearly cancel each ot
You show a Jfet, not a Mosfet. A Mosfet has a powerful avalanche diode built into it then your diode that blows up is not needed.
The speed and voltage range can be achieved by cascaded MOSFET and particularly BJT avalanche switches. The latter can only switch fast on, so they are usually implemented as transmission line pulsers. Simultaneous triggering of the cascaded switches with < ns skew is challenging.
The emitter-base junction of a transistor has a reverse-biased avalanche breakdown at 5V to 7V and is not robust to handle the breakdown current so the transistor will be damaged. Then maybe the base-emitter should be shorted to make a diode.
Hi all, I'm now make a board to produce a sub-nanosecond pulse using avalanche transistor. And I made it successfully.The second Fig is the waveform I tested using a 4GHZ bandwidth oscilloscope. 128925128926 But when I want to produce a more narrow pulse, I don't know which parameter should be adj
What is the input dynamic range of a typical charge sensitive amplifier (CSA) ? It is possible to detect 1.5 Million photo electron by a CSA ? If yes then what is the output signal strength of such CSA. These photo electrons are produced by some number of multi-pixel avalanche photo diode array which has around 1.5 Million pixels all together.
I have never seen TVS diodes for overvoltage suppression in fast MOSFET circuits, they are slow and adding unwanted capacitance. Short, low energy spikes can be absorbed by the MOSFET avalanche capability. It's not unusual that the internal Vds of fast switching MOSFETs has an overvoltage by working of package inductance, driving the MOSFET into av
Hi all, I am looking to improve my circuit design, PCB prototyping and fabbing skills and I am looking for a project to take up some of my time this winter. I am looking to build my own avalanche transceiver from the ground up, and I was hoping that I could come here for some direction. I am looking to replicate something similar to the Back
Very bad circuit with unclamped inductive load, driving the FET into avalanche breakdown.
Since it requires power and has negative resistance like SCR's , Tunnel Diodes and Unijunctions, it is active. It is a regnerative avalanche process.
Never came across a BJT with BVCEO of 1.5V. What kind of devices are you asking about? Generally, BJT don't tolerate avalanche breakdown. Pemanent damage can be expected.
Arcs are very low negative resistance avalanche effect which often switch in sub ns time. But in this case there are large physical properties and require special transformers. I see one paper... presents a time domain model called exponential-hyperbolic for electric arc furnace using MATLAB but haven't read it
general it is either back to back zener or single zener like avalanche diode. But some also prefer Triac like performance e.g. TRANSIL / TRISIL COMPARISONElectrical characteristicsThe Transil is a clamping device which suppresses all overvoltages abo
Try again >18kV min for trigger >0.62us .. choose a few us with Cap 540V~1889V for reliable trigger With only 300Vdc on cap, trigger must be increased. Duration of lamp depends on size of capacitor & voltage , as lamp is a negative resistance avalanche with an positive power series ESR where Impedance parameter. (Ko) 11.9 Ohm Amp ^0.5 ESR of
Hi, i m simulating a 0.18 standard NMOSFET's breakdown characteristic on sentaurus now. The accuracy of those available physics model puzzles me a little bit cause by choosing different models the breakdown voltage could vary from 3 V to 8 V.(by band2band or avalanche ) Can anyone tell me how to choose the physics model correctly? Thanks.
I am working in a avalanche Breakdown property of device and tring to simulate this property for getting Diferrent curve(IdVds and Idvgs curve.) for my MOS device with sentaurus TCAD tool. But can not get the desired results.