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55 Threads found on edaboard.com: Bondwire
A CMOS inverter ring will vary a lot with Vdd. About the same ratio as your IDsat (since capacitance changes not much). A bare ring oscillator can be tough to test especially at probe, the edges against bondwire or probe inductance can make the ring unstable (kill oscillation, etc.). Well designed ROs may have a high #bit counter appended to help
If you're talking about the power bussing for the logic core, it goes something like 1) What is the lower voltage bound of timing-model validity 2) What is your minimum supply? 3) If you're not already screwed, this is Vdrop(max) across the sum of leadframe, bondwire and on-chip distribution bussing. Leadframe and bondwire (or bump, or whatever)
Hi, I am designing a PA as shown in schematic. Some specs are: 2.4 GHz ultra low power (<1mA) moderate linearity (modulation is QPSK, moderate PAR, either class A or class AB) The problem is my gain falls by 2dB (w.r.t mid band gain) at 2.4GHz when O/P is loaded with 200f parasitic capacitance. The O/P shall drive offchip matching network a
There are two things going on in your design. 1. As you already mentioned correctly, the bondwire transition degrades the performance of the filter badly. You can see this in the simulated return loss of the filter. I assume the return loss caused by this transition is around 10dB, but you have two of them. In order to get better performance you sh
X-Ray may be used to take photo of package inside.Then you can measure bondwire length. The electrical parameters are only found by simulating within 3D EM simulation environment.But it is also pretty complex because the bondwires may not be uniform as you wish..
Most MMICs have the bottom side grounded. "bondwires connected to ground" is typically not necessary. Running multiple bondwires in parallel is to reduce parasitic effects of bond wire and/or increase power handling capabilities. Could you attach the datasheet?
i have a chip of a discrete device (connections are gnd, VS, VG, VD). i have bonded each of these pads to adapters to build a circuit, however I ran into some problems when checking the DC characteristics of the newly bonded device. see attached image of Ids - Vds characteristics. When i measured the DC characteristics at the pads (after i had b
Hi! Does anybody could tell what is a practical minimum value for the bondwire inductance? i'm working at 2.4 GHz and 90 nm technology. thanks PS: if you know typical pad capacitance value will be also very helpfull ;)
Besides reduced even order distortion, is also the susceptibility to common mode noise couplings through the supply rails reduced. Effect of bondwire inductance can be reduced. Especially for low noise RF CMOS circuits is balanced output a must to reduce noise caused by substrate noise injection. Some of these advantages in noise and harmonics can
Hi - I tried several LNA architectures running the LNA between 6 - 8 GHz. But I always fail when inserting a 2nH bondwire as the peaking around 5 GHz kills the LNA performance completely. What UWB achitecture (preferrable no inductor) would you recommend for a Signal burst receiving at 7.5 Ghz? Greetings, Tom -
In Passive-RF Circuit palette, there are some bondwire models.Use them which is suitable.
without opening in passivation layer you can not create contact between bondpad and bondwire or wafer probe.
Hi all, Currently I am designing an LNA around 2GHz, and I want to use a bondwire inductor about 0.2nH as the emitter degeneration part. Is it possible to realize it by multi bondwires in parallel? I need it to make a fast estimation, any suggestion is appreciated. For the simulators, HFSS and ADS EMDS? Which one is better to simulate this
In your case , probably the bondwire inductance is introducing a zero well within the UGB of the LDO and which is enhancing the gain.
2. The very important thing is source to ground connection should be very short and wide to avoid ground inductance which will kill your gain In fact for CMOS design, the ground inductance is mainly contributed by bondwire and the lead of the package. For design in GaAs technology, TWV(through wafer via) is availabl
My package contains 3D bondwire structure and 2D microstrip structure. How can I get the model of 3D bondwire structure ? by what tool ?
Hi, Is there a way to obtain partial self inductances from S-parameters?.... i am modelling a single bondwire in HFSS, however the results obtained are for the loop inductance, is there anyway i can calculate the partial self inductance of the bondwire? Is there a method of breaking the loop inductance into it's consituent partial inductances f
Instead of designing your circuit in HFSS, you can directly use ADS for your complete design. ADS has integrated FEM based tool where you can simulated your structure along with bondwire then can use ADS circuit simulator for complete simulation
There's a bondwire model in ADS.
Hi, I my current project I'm designing an analog output amplifier to drive an off chip capactive load of around 15pF @75MHZ. Now I want to incorporate as much parasitics as possible in my testbench. So I started to see what really matters. I came up with the following important package related parasitics. 1. bondwire self inductance 2