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55 Threads found on edaboard.com: Bondwire
A CMOS inverter ring will vary a lot with Vdd. About the same ratio as your IDsat (since capacitance changes not much). A bare ring oscillator can be tough to test especially at probe, the edges against bondwire or probe inductance can make the ring unstable (kill oscillation, etc.). Well designed ROs may have a high #bit counter appended to help
If you're talking about the power bussing for the logic core, it goes something like 1) What is the lower voltage bound of timing-model validity 2) What is your minimum supply? 3) If you're not already screwed, this is Vdrop(max) across the sum of leadframe, bondwire and on-chip distribution bussing. Leadframe and bondwire (or bump, or whatever)
Hi, I am designing a PA as shown in schematic. Some specs are: 2.4 GHz ultra low power (<1mA) moderate linearity (modulation is QPSK, moderate PAR, either class A or class AB) The problem is my gain falls by 2dB (w.r.t mid band gain) at 2.4GHz when O/P is loaded with 200f parasitic capacitance. The O/P shall drive offchip matching network a
There are two things going on in your design. 1. As you already mentioned correctly, the bondwire transition degrades the performance of the filter badly. You can see this in the simulated return loss of the filter. I assume the return loss caused by this transition is around 10dB, but you have two of them. In order to get better performance you sh
X-Ray may be used to take photo of package inside.Then you can measure bondwire length. The electrical parameters are only found by simulating within 3D EM simulation environment.But it is also pretty complex because the bondwires may not be uniform as you wish..
Most MMICs have the bottom side grounded. "bondwires connected to ground" is typically not necessary. Running multiple bondwires in parallel is to reduce parasitic effects of bond wire and/or increase power handling capabilities. Could you attach the datasheet?
i have a chip of a discrete device (connections are gnd, VS, VG, VD). i have bonded each of these pads to adapters to build a circuit, however I ran into some problems when checking the DC characteristics of the newly bonded device. see attached image of Ids - Vds characteristics. When i measured the DC characteristics at the pads (after i had b
Hi! Does anybody could tell what is a practical minimum value for the bondwire inductance? i'm working at 2.4 GHz and 90 nm technology. thanks PS: if you know typical pad capacitance value will be also very helpfull ;)
Besides reduced even order distortion, is also the susceptibility to common mode noise couplings through the supply rails reduced. Effect of bondwire inductance can be reduced. Especially for low noise RF CMOS circuits is balanced output a must to reduce noise caused by substrate noise injection. Some of these advantages in noise and harmonics can
Hi - I tried several LNA architectures running the LNA between 6 - 8 GHz. But I always fail when inserting a 2nH bondwire as the peaking around 5 GHz kills the LNA performance completely. What UWB achitecture (preferrable no inductor) would you recommend for a Signal burst receiving at 7.5 Ghz? Greetings, Tom -
In Passive-RF Circuit palette, there are some bondwire models.Use them which is suitable.
without opening in passivation layer you can not create contact between bondpad and bondwire or wafer probe.
Hi all, Currently I am designing an LNA around 2GHz, and I want to use a bondwire inductor about 0.2nH as the emitter degeneration part. Is it possible to realize it by multi bondwires in parallel? I need it to make a fast estimation, any suggestion is appreciated. For the simulators, HFSS and ADS EMDS? Which one is better to simulate this
In your case , probably the bondwire inductance is introducing a zero well within the UGB of the LDO and which is enhancing the gain.
2. The very important thing is source to ground connection should be very short and wide to avoid ground inductance which will kill your gain In fact for CMOS design, the ground inductance is mainly contributed by bondwire and the lead of the package. For design in GaAs technology, TWV(through wafer via) is availabl
My package contains 3D bondwire structure and 2D microstrip structure. How can I get the model of 3D bondwire structure ? by what tool ?
Hi, Is there a way to obtain partial self inductances from S-parameters?.... i am modelling a single bondwire in HFSS, however the results obtained are for the loop inductance, is there anyway i can calculate the partial self inductance of the bondwire? Is there a method of breaking the loop inductance into it's consituent partial inductances f
Instead of designing your circuit in HFSS, you can directly use ADS for your complete design. ADS has integrated FEM based tool where you can simulated your structure along with bondwire then can use ADS circuit simulator for complete simulation
There's a bondwire model in ADS.
Hi, I my current project I'm designing an analog output amplifier to drive an off chip capactive load of around 15pF @75MHZ. Now I want to incorporate as much parasitics as possible in my testbench. So I started to see what really matters. I came up with the following important package related parasitics. 1. bondwire self inductance 2
A 9.953-12.5GHz 0.13μm standard CMOS bondwire LC oscillator using a resistor-tuned varactor and a low-noise dual-regulator Maxim, A.; Turinici, C. Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE Volume , Issue , 11-13 June 2006 Page(s):4 pp. - 344 Digital Object Identifier 10.1109/RFIC.2006.1651161 Summary:Notice of Viol
Hi, Could anyone recommend some papers/books on how to model a bondwire inductor used in LC-VCO? And are there good softwares on model it? Thank!
u only need worry bondwire for high speed design for LDO not tht crucial
I'm building a bondwire in HFSS and trying to model behavior at a certain frequency. I have the bondwire, a ground plane and a "die" plane, and two lumped ports at both ends of the bondwire. One of the ports seems to be functioning ok - when i do the "plot field" animation, there is clearly something going on. However, the other por
It's been my experience that you cannot change a bondwire. Removing/rebonding often damages the silicon under the bondpad, which is usually doped N to act as a simple ESD device. Damaging this junction makes it leaky. The failure analysis you should do is to curve-trace the BE juntion. If it was ESD zap, then the BE has been damaged as if it
If the two bondwires are in parallel the total inductance is half of one bondwire. If they are not in parallel, but mutual coupled, the exact inductance should be simulated using an EM simulator or a bondwire model. In general a coupled bondwire it will increase slightly the inductance of the main bondwire.
The best way is to have seperated bondwire and bondpad for analog and digital ground.
I am a freshman in some questions here. Why bondwire is suitable to connect transmission line with MMIC Chips? what is the effect of connection,and common circuit model of it? Any good refences? Thanks Liu
what's the value of the contact resistance between 25um gold bondwire and pad ?
sure the multi Ghz RFIC , these effects of bondwires and pads must be taken into account , u need to check how the bondwire intuctance will affect the impedance khouly
Yes, one pad and one bondwire is enough for 200mA. Mainly consideration is IR drop on the bonding. It is about 50mohm for 1mm bonding wire.
How to modeling the bondwire and the wire on the PCB when i design a lvds driver. Should i use a ibis model?
well, you can assume cp to be the bondpad-capacitance (something between 1pF and 5pF should be ok - 5 pF is alrady quite etreme - think about the impedance 1/2*pi*f*cp at some 100 MHz - this competes than already quite clearly with the termination) anyway lp is the inductance because of bondwire etc - around some nH (5 ?) ... cl is the load c
Using RDSON = VDS/ID Practical ON resistance need to add the bondwire and PAD resistances(Typical 50mΩ). Set the current of switch MOS, Use '.measure' to get the ON resistance curve at DC(Voltage) simulation. B/R Edwin
Indeed this is a hard thing to do, you only have S11,S21,S21 and S22 measurements although at different freqs, and many parameters to tweak ... To find approximations for the extrinsic components I would refer to the package parasitics. The length of the bondwire etc depends on the physical structure of the package and can be approximated. That'
Hi, Q1) what does a glass mean in layout? Does this mean an opening that serves connection between a top metal and bondwire? Q2) What is overglass? Q3) Why is it called glass? Any insulator can be called glass? Q4) I also know that the insulator on the chip is called passivation. What is the relationship between passivation and overglass?
Dear all, I have questions regarding bondiwire simulation in HFSS: 1. Is it possible to have multiple terminal in lumped port using "drive terminal" solution type? 2. When I use a lumped port for each bondwire, will the coupling between bondwires be taken into account? 3. Imagine I have two dies stacked, the bottom die is larger than the top
Dear all, I design a LNA. Firstly, I don't added any bondwire effect (1nH in series with 1ohm to pretend a bondwire) on each pad for the simulation. Afterwards, I added the bondwire model at each pad and do the simulation again. I found the NF is 3dB higher compared to the LNA without bondwire model. It is terrible. (...)
when analyzing the coupling between transmission lines on the CMOS, I used the bondwire as the output link offerd by CST, but I found that there's little output, could you help everybody analyz the reason? and how to set the groundf for the CMOS? attached files: 1. currnet distribution in the CST 2. schematic fig with the CST
Hi, I designed a current mirror transimpedance amplifier by using 0.13?m cmos.Now I got 60db gain & 3.2Ghz bandwidth.But my desire bandwidth is 10Ghz.I used 1amp current source through bondwire inductor, Biasing voltage=1.3v Q1=28?m Q2=36?m R1=2K R2=1K Anybody can suggest me, how can I got my desired BW by using these parameters. Pl
Adding severalbond wires in parallel is standard solution for minimizing the inductance. A bond wire has an inductance of about 1 nH/mm length, so four bondwires in parallel will give about 0.25 nH.
Dear all : I need to bondwire for matching LNA input. But I don't know how to calculate bondwire resistor. Somebody can tell me how to do ?? thanks ..
Bond wire oscillators are typical between 500-2000MHz. The problem with the high variability of the bondwire alone is reduced if the pin where the bond is connected is connected to a trace. The variability is high because the cap variation and the bonding variation come together. So typical switched pretuning is needed. The advantage of higher Q of
The shape and length of the wire may vary when processes of forming the bondwire inductor are performed and the inductance of the inductor may gradually vary. You have to allocate up to +/-20% tolerance for this variation. Q of a bondwire inductor is greater than 40. I have used successfully in Power Amplifiers modules for integrated output RF c
Hi, I was asked one question, which I could not answer correctly...(I don't know the answer, but I know I was wrong.. -.-;) What is the skin effect and mutual inductance relationship? For example, there are 4 bondwires.. If I connect them in parallel, then the total impedance goes down. At high frequency, how does skin effect play and how d
How to modeling the bondwire and the wire on the PCB?
Hi all, Can you help me calculate the total inductance for 1mil bondwire as function of the total BW length at 2 and 6GHz Thanks Bouchy
The inductances of bonwires are not sufficient to design circuits. Also, mutual inductances and as well as package parasitic capacitances must be well modeled and should be taken into account when doing simulations. Especially over 2GHz, parasitic capacitances regarding to substrate,diepad and neighbourgh pins and bondwires must be very well modele
bondwire will has a 4nH inductor typically
A packaged chip need receive a high frequency(1.1GHz),sine wave,low swing(peak to peak=0.3v) signal from external. How to consider the IO pad's equivalent model including bondwire(Au wire between analog pad and pin) and analog pad in chip? My design is based on TSMC0.25 mixed signal process, what are the parameters of this IO pad's equivalent model