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22 Threads found on edaboard.com: Carrier Mobility
This question hasn't a simple answer. For example, a mobility reduction due to carrier velocity saturation starts at electric fields higher than so called critical field equal to 0.8 MV/m and 1.95 MV/m for electrons and holes respectively. It means that for given channel length like 100nm it becomes important for Vds (or Vdsat for mosfets working
Depends on the models (which LEVEL or BSIM model) you have available. You should find these parameters in the model file(s): Vth as VTH0 Channel length modulation parameter as PCLM For Kn you need the low field channel carrier mobility U0 and Cox, which you can calculate from the SiO2 oxide thickness parameter TOX (or TOXP or TOXN).
can anyone explain the Charge-carrier mobility degradation/structural mismatch of gate, source and drain which has affected FETs (Covalent bond).
Hi all, I am doing some research on modeling. I am investigating the model file from tsmc65nm. The model file is huge and contains plenty of vth parameters like : " Line 1661: parameters dwvthprf= - 3.1e-09 * a1prf Line 1662: parameters dpvthprf= - 1.71e-16 * a1prf Line 1720: parameters dvthnrf=0.0285 * a1nrf Line 1721: parameters dlvt
Vs will depend on what is attached to it. Is the source attached to a resistor? Is it attached to GND? Is it attached to a voltage source? Is it attached to a capacitor? Additionally, depending on what it's connected to, the answer may depend on threshold Vgs, carrier mobility, gate capacitance, MOSFET dimensions, lambda, and body effect... So, y
The threshold of CMOS inverter is dependent on mobilities of electrons and holes. In that aspect it is clear there is a dependence on temperature because the carrier mobility is dependent on temperature. So what i ask is how that dependence is in 180nm standard technology?
Drift current in semiconductors is a function of applied electric filed, number of carriers and carrier mobility. Drift Current Drift and Diffusion current
Hello, I would like to find the values of carrier's mobility that HSpice using for simulation in 0.35um process. Does anyone know how? Thank you in advance
You should also recognize that you are talking -surface- mobility in a MOSFET, which is not the same as bulk carrier mobility in a "long" bulk device at all. You have surface scattering and a constrained Z dimension.
Hello all Here are some of my doubts: 1.Why does carrier mobility reduce with temperature for pmos/nmos? 2.Why do low Vt devices have high leakage? 3.Why does the voltage drop happen when the nmos is used to generate a logic "high"? 4. Why do series connected "n" number of nmos/ pmos have a threshold drop of just Vdd -Vth and not
What is velocity saturation effect? How it is related to IC layouts? Dipak carrier velocity v = ?E (?:mobility ; E:electric field strength) in silicon saturates at about 10^7 cm/s. This leads to an Id-vs-Vgs less than quadratic dependency, i.e. more linear behavior, meaning lower Id current, by this lower saturation volta
For diffusion resistor, when temperature rises, the carrier's mobility will decrease, so the resistance will increase.
When temperature increases, performance degrades.. because the carrier mobility degradation leads to slower slew rates... and hence the slower the speed. So when temperature increases, to keep circuit working(i.e. avoiding timing violations) you can slow down the frequency to avaiod the timing violations.... or you can increase the voltage(if perm
it is due to mobility of the carrier that forms the channel...
Why is modulation required from an antenna perspective. I know the antenna size should be in the order of the carrier wavelength. Thats why we go for higher frequencies. Is there any power connotation to that : like higher frequencies require less power ?
it is mainly due to the mobility of the majority charge carrier involved....
Can anyone give me how to extract CMOS parameters parameters? The equations and derivations? Channel length modulation threshold voltage, mobility carrier etc.. Tnx!
Hi, Silicon germanium (SiGe) is one of those proliferating materials. Compared with silicon, SiGe offers greater carrier mobility, an important property for achieving high device-switching speeds and low power consumption. Recent successes in incorporating SiGe into conventional CMOS production have resulted in its increased use in advanced proces
I need some layout examples for testing purpose. I have to design some caps, transistors etc. and then I want to measure some parameters like contact resistance, carrier mobility, conductivity, treshold voltage etc. Thanx in advance...
In addition to poly, channel carrier limited mobility also make NMOS appear to have ESR.