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# Constant Vgs

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mosfet vgs , vgs vgd , delta vgs , vgs transconductance
51 Threads found on edaboard.com: Constant Vgs

## Process Variation Control for Subthreshold Devices

... I think it would be due to the exponential dependence on threshold voltage in the subthreshold region. Can't you provide constant current to the diode connected transistors? Temperature dependency of Vds=vgs is very low.

## Full Bridge Transformer primary voltage is constant and not varying with gate signal

Hi. I am trying to build a full bridge SMPS DC-DC converter. Attached are my primary gate drive waveform (Blue waveform) and Primary output Voltage waveform (yellow waveform). 124867 Problem I am facing is that even when the gate voltage is zero, MOSFET is turned on and it turns off only when a -15V is applied across

## How to maintain ID constant by increasing VGS

What I have learnt so far is ID(Drain current) is a function of vgs(when the MOSFET is operating in active region). Is there any way to maintain ID constant by increasing vgs? Thanks

## the size of NMOS trasistors of circuit

Hi Just give 2 equals nmos minimum sizes (length, width) and assign Va a dc voltage. Sweep Vc from 0 to some dc number and plot Id1, Id2. I expect Id1 is constant since it is in diode connection and Id2 will go from low to high current because you sweep its gate from 0 to some dc number

## How to know unCox and upCox when calculate gm?

Hi all: I am designing a OPA and I set the input gm = 10uA/v = upCox*W/L*(vgs-vth)=(2*upCox*W/L*Id)^(1/2), but I found the upCox doesn't a constant value, it changes with W/L or vgs or vds. How to know the upCox value? Thanks for your reply. mpig

## why id is constant during Miller plateau ?

hi all , i saw this curve in many books ，I knew in mosfet id=gm(vgs-vth),but when vds is falling ， IL=(VIN-VDS)*t/L，IL=ID which should be rising ! so id should be constant or rising? the picture shows me it is constant ,why?:?: 96672

## Sentaurus Device simulation problem：Why are the inner and outer gate voltage not same

Hey everybody, I am a novice for the sentaurus, I am trying to use it to simulate a silicon-based MOSFET. When I simulate the transfer characteristics of the device with the vgs=1.5V and VDS=0.05V, the drain current turns out to be constant. And I found the outer gate voltage varies from 0 to 1.5V, however, the inner gate voltage varies from 0

## MOSFET IRF9610 design

M4 is a constant-current source. You've got (9.1V-vgs) across R15, regardless of the drain voltage.

Hi, I am designing an LNA and at the output I have placed a source follower based buffer. This buffer is giving a constant S22 of -15dB from 660MHz onwards. However if I am checking the transient analysis of the buffer, I find that its vgs = 382mV and gm = 3.9mS, vds = 650mV, id = 200uA. Further if I check the drain current voltage waveform o

## MOS temperature dependence of Vds, Vgs

... I can't find a way to determine the rate of change of Vds with respect to temperature. If you know the vgs vs. temp. dependency for constant drain current Id, it's just a question of the drain load and its possible temperature dependence.

## what is the value of channel length modulation constant in 90nm in cadence

how to calculate channel length modulation constant lambda in cadence gpdk90nm. i calculated it by gds/id and also by pclm parameter( but the values are 1.5488 and 1 which seems to be very large) as compared to 500nm technology which is given in RAJAVI's book. if u have calculated plz tell me.

## Constant current sink - LM324 with 2 MOSFETS in parallel on output - will it work?

I want to use two MOSFETS in parallel, with both of their gates being driven by a single output from and LM324. Is there any reason this is not a good idea? If so, is there anyhting i can do to make it work? Schematic

## corner simulation's query_about the process invariance

hi all, I am doing the design of constant current LNA independent of the process. Its structure is the common source topology and the drain voltage is fixed to 1 V while gate voltage varies with different process. But the overdrive voltage Vod=vgs-Vth is nearly fixed for all process. In the simulation,I find the MOS drain current still changes

## Doubt on MOSFET Body Effect

I found on my notes that for an NMOS with increase in Vsb voltage Body Effect increases, Vt also increases. But it is mentioned that with vgs constant id increases which I feel is wrong since id is proportional to (vgs - Vt)2. Hence I think id should decrease. Please show me the ligh

## The square law behavior of CMOS?

Square law of CMOS: current is a square function of the input voltage I = K (vgs - Vth)? <- Here is the square ;-) Where K is a constant. If input voltage increases linearly, the current increases by square. For simplicity, we can ignore the threshold voltage and rewrite the equation as: I = K (vgs)? If the input signal (...)

## NMOS Vgs versus Temperature for Zero Temperature Coefficient current

There's a "magic point" where the voltage will be constant, you may have to vary the geometry to see it. VT goes down, subthreshold slope goes up, you balance them.

## enhance Rds of a NMOS transistor

Supposing Vds is constant, Mos will change from linear region to active region as vgs decreases. As result, output resistance rds will increase.

## how to design start-up circuits??

Dear all, In my design, I have a analog block called "IREF-gen" which supplys bais currents for all other analog blocks in my IC; inside this "IREF_gen", we use a start-up; it comes two sorts of start-up for me: one is using p-n MOS diode-connected to gen constant bias for a NMOS; initially, the NMOS' source volatge is 0V and its vgs is higher

## need a start-up circuit for high voltage design?

... the pMOSFET will get a big gate-source voltage constant current into a gate-source (resp. gate-bulk) resistor.

## Biasing at 0.2mA/um current density

Your bias current changes with the supply voltage, this explains why you see a bigger variation with power supply. You should bias your active device with a current source to keep the bias current constant.