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28 Threads found on edaboard.com: Critical Cell
What corner is used for setup check? Process - Slow Temp - high Voltage - high This PVT condition makes cell delays as large as possible. Is this used for setup check to make setup check more critical.
Hi, We are facing a critical issue related to coin cell battery. We have our own products,its powering through 3V coin cell battery (BR2450,550mAh). According to our calculation battery should work more than 5 year. But some of the device's battery is dying soon (within 1 month) and all our products are manually potted with our own (...)
HI. I have a design post letlist and found some critical points. so I'd like to funcion and timing ECO by manually with spare cell. if I done, should I have to re-synthesis? or just skip timing>?
After I synthesized in design compiler, I write_milkyway to store my design. Then I read_milkyway in Primetime, after read milkyway, when I report_timing, I should get the timing report show all the pints in critical path are annotated, but I didn't get it, all the points don't have * to show they are annotated, I don't know why... In prime ti
Hi All, Though there are many ways to fix setup violation coming in your design. 2 of the most methods used up are - Upsizing of the cell ( critical path ) and adding the buffer. Wanted to know what is the criteria for using up any one of the method for a particular critical path. Regards Limitless
After synthesis, you can check: - Clock ideal STA. Knowing critical parts about timing in you design functional mode. - Area ( Without clock cells and optimization cell from PnR ). Inform it to PnR members would be helpful for them. - SDC quality. ( report by check timing and so on .. ) If you want, you can check power report, but it is (...)
Hi, I am using RTL compiler to synthesize a critical path of MUXs, and the tool implements the MUX using gates (NAND, OR ... etc). I am afraid this may increase the path delay while the std cell library contains MUX cells. Is there a way to instruct the tool to use a std cell MUX instead of gates ?
I came across one of the answers of this question in one of the threads. "critical path in the SRAM is activated when a logic 1 is read from the cell at the first row's last column. This constitutes the critical path because when the word line is asserted from the row decoder, it has to charge ALL the gates of the pass transistors (...)
Hi, I want to know how to fix a hold violation in the scenario where addition of buffer (to fix hold) causes setup violation. Is there any other way to fix this hold violation? Thanks in advance.
You can design SRAM cell with 6 transistors using 65nm technology. What is the problem.? 1) Is is critical to calculate the exact size for each transistor and is it necessary? 2) Is there a tristate circuit for the SRAM's bit/bitB
Use HighVt library cells (cells with high voltage threshold transistors) in timing non-critical paths. Use low voltage. Use power gating method (switch-off supply for currently unused modules). Use LowPower foundry process (they increase voltage threshold for CMOS). Use multi-channel libraries.
There are flops with -ve hold time in my library. I think it helps in hold fixing efforts to reduce in setup is not critical ( low freq esigns) 1) What is actusl the intent of the cell designer to do so 2) Is there any drawback of using these flops ? ( Assuming low freq designs) -Girish
hi muthamil, my 2 cents, Max operating frequency can be found by the Design Timing critical path based on Timing analysis. Switching frequency for a cell is basically state driven and this information will be available in your library (state dependant power). happy designing chip design made easy
Do really need the datapath to be full custom? What is your constraint? Timing/area/power? Often the critical path is the control, rather than datapath.
choose global optimization tool such as rtl compiler then it will place low vt cell in critical paths and high vt cells in non critical paths for getting power and area optimization
Thats why u get standard cells as HVT RVT and LVT, (Higher,regular and lower thershold voltages). U can use this to reduce leakage..But less leakage cell will have more delay..i.e., HVT cells have more delay than LVT. so u can use LVT for timing critical paths and other places use HVT to reduce overall leakage.. Thanks
There exists a number of ways to correct a timing failure 1). placing the critical path cells closer in layout 2). introducing pipline registers 3). write parallel RTL 4). register re-timing 5). state machine encoding 6). cell resizing 7). redundant resigters to imporve driving current. etc etc... 8). Aviod unwanted priority (...)
Hi, Can we safely assume that the ratio of input and output transition times tends to be close to unity in synthesised standard cell based (optimized to meet timing closure) critical paths? With regards, Anand Bulusu
wat is the critical path in SRAM?? critical path:------the logical path where the timing i s not met.... but how in SRAM?? can anyone discuss....... thanks
Im using quartus II 6.0 to simulate my circiut, but there is an critical warning comes out and said that : ----------------------------------------------------------- critical Warning: Ignored Power-Up Level option on the following nodes -- nodes are set to power up low critical Warning: I/O (...)