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86 Threads found on Device Esd
Hi everyone, Is anyone familiar with these design rule {esd.28g , OD.R.1 , DRM.R.1 } which my design has not passed them? Can anyone help me to fix them? Are they major problems or the could be waived? esd.28g { @esd implant is required for High Voltage Tolerant I/O designed by 3.3V NMOS device for 5V signal input or 2.5V
The device is not at all suited for USB protection. Wrong voltage, probably too high capacitance. There are so many dedicated USB protection devices, just browse the selection guides of major manufacturers or catalog distributors.
Hi I had a esd NMOS transistor (with sab block) on pwell , which is surrounded with 1st ring (n+/pw), then 2nd middle ring (p+/pw), then 3rd outer ring (n+/dnwell). My question is when I tried to measure IT2 of the esd transistor, (with Vd=Vbias, Vg=vs=GND), how do the guard rings connect to? 3rd ring (n+/dnw) : float? 2nd ring (p+/pw)
Hi, there are dedicted USB data line protection devices. You need to take care about USB speed. Especially for USB3.0 speed you need very low capacitance diodes. I used VBUS054B (very small) and IP4220CZ6 (TSOP-6 / SOT23-6) for USB2.0 devices. Klaus
Limiting the current, but also ensuring that it spreads evenly so as to avoid hot-spotting and local power density related physical damage. Pullbacks (with salicide block) are the norm in esd protection device design. They should be used on all pad-connected drains / sources. PMOS may not be self-survivable (i.e. its own D-S breakdown is low en
Hello, I have to choose surge and esd protector for my device. It falls in class 4 that is 8KV contact/ 15KV air for surge protection and class 4 for 4KV protection in Surge. Circuit Detail : 1) input signal is 110V DC for monitoring As it is coming through field i have to put esd/Surge protector on that line. Queries : 1) Can (...)
I'm designing a RS-485 communication device for CE & UL standard certifications. My test standard is ?2KV (IEC61000-4-5). We have In-house lab test facility with esd, EFT, Signal line surge generator, etc., For my various protection circuit, I can't able to pass the test more then ?1.5KV. Please review my circuit & share your commands. The attac
Use a similar protection like the CMOS input protection: 121599 Use "vanilla" (any) diodes; D1 & D2 to your external device's power supply, D3 & D4 to the processor's power supply. R=1kΩ should be ok.
Hi i'm Junsik. I am studying about esd protection device. Gate-Grounded NMOS (GGNMOS) is generally used as esd protection device. It is connected between I/O pad and ground side. I think another esd protection device at the power side should be needed. As a power side (...)
First, this is not about one diode. It is about the current loop and every device it must traverse to get from its entry to its exit. "Victim" devices exist all around the loop and have different voltages imposed by the local drops / rises. You really want reliable, reasonable models for the protection and the "victim" devices which include (...)
Did you notice that both device specifications are referring to the same IEC standard?
It has. The standards for esd sets voltage levels and source characteristics (such as human body model (HBM) or machine model (MM) ). Both the model and the voltage level may be specified in the product's datasheet. charge device mode(CDM) is the other esd performance index besides the HBM and MM
esd is about current but everybody talks about the voltage. Where is your current path in an all-shorted-to-GND device? Right. Now, lonely gates with a huge chunk of metal can be an antenna charging threat. But that is not esd. An implanted resistor region makes a swell antenna diode. A floating (like poly) resistor is not going to (...)
What device will be destroyed by esd on your phoneboard? Nowdays,the front-end module in GSM phone,such as PAMs are all integrated esd protection circuits which could pass the +/-8KV or +/-15kV esd test. Additional esd protection circuit will add your cost.
The sudden current discharge to earth may itself be sufficient to cause disturbance in your device. With no ground to earth, the charge remains everywhere constant on your device. No discharge current surges. In the sense that I carry my laptop computer to another room. Just by walking, my body acquires 10,000 V of static charge. My laptop is at 1
They limit negative voltages on the input pins which could damage the device.
device appears to be non-functional.:sad:. Did you practise esd safe methods? You have only a little protection for esd damage on connections.:roll:
Hello all, I'm designing a power over ethernet (PD, not source) device and I'm struggling with proper case grounding scheme. For simplicity I've chosen TI's TPS2375 as PoE manager and non-isolated step-down DC-DC switcher. In my mind PoE supply ground might be in different potential than mains ground line or esd-protection ground line. How sh
You can use any device you want as the "victim" - that's the point of making a testbench really. But you have to expect the MOSFET model may be a fair bit short of reality when you get to the margins, such as the accuracy of breakdown I-V (often entirely absent from IC FET models, possibly emulated in power FET macromodels). And you can safely bet
plz give me 4KV HBM model for esd device.