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6 Threads found on Emitter Current Density
Of course then you add the resistor mismatch term (hopefully better than MOS; likely so if MOS is small and resistor is not challenging lithography). Mismatch is driven down by more area (emitter for BJT; W*L for MOS). In leading-edge minimum MOS, random dopant (density) fluctuation is a big deal; I've seen it said at conferences that some devices
At equal emitter current density the two assemblies will have equal gain (mismatch aside). However all BJTs exhibit a collector current dependence (beta vs Ic is a popular chart, for good reason). I wouldn't spend much time on the equations / definitions as you show them. They don't appear to include either low (...)
When for a npn transistor, collector base junction i forward biased the voltage Vbc = +ve but smaller than the base emitter voltage Vbe because of moderte carrier density of collector. This leads to the saturation condition resulting in collector current smaller than the same in linear region for the same collector current. (...)
My personal selections chart: current density is the most important criteria! There are 4 different magic points in the current density chart. 1. current density where the IE*REemitter open device. Typical RE=120 Ohm. Offset (...)
The bond wire could be the cause, but 0.3nH is very small so I'm guessing it maybe something else. The peak may also be coming from the inductance effect of the emitter followers/source followers in you design (if you have any). If you do have an emitter follower/source follower running at a high current density, this will (...)
If I have understood ur statement properly....than there should not be any view is following..... for npn bjt: from emitter heavy density electron flows....drains towards collector....while going some of them get recombined with lightly dopped base regin p+ (holes)....this gives rise to some current....very less in ma