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47 Threads found on Esd Nmos
Hi everyone, Is anyone familiar with these design rule {esd.28g , OD.R.1 , DRM.R.1 } which my design has not passed them? Can anyone help me to fix them? Are they major problems or the could be waived? esd.28g { @esd implant is required for High Voltage Tolerant I/O designed by 3.3V nmos device for 5V signal input or 2.5V
My experience is that PMOS devices do not have (or have as good) the snapback characteristic which makes nmos GG clamps effective. I've tried it out. What I got was esd "clamps" which gate-ox-ruptured, i.e. not able to even protect themselves let alone others. Now, you might get somewhere with a switched-gate clamp, but conduction density is not
Depending on geometry, they may be just the cheapest possible resistor-like element (here you'd see very long L, near minimum W). Or sometimes, you just want a "diode" that is not pinned to one rail or the other, at one end or the other (well diode, not too useful except for one side of an esd clamp). I don't work on stuff that's that cost sensiti
a simple GGnmos esd at input. VDD is 2.5V, and have no esd protection with VSS. I have seen the right circuit in some books. But I also seen the left esd circuit at a real chip. Which is better ? I think the input wired to gate at left circuit, that is not good and sensitive. But PMOS protection effect is less (...)
What kind of guard ring do you mean? If it is only used to avoid latch up, i think there is no special rule for the width, because it is just a pick up function. If it is also used as the current path of esd, it should be as wide as possible.
64957 This is my proposed circuit for and esd protection circuit. This is just a test circuit so I used a load resistance first instead of the actual rectifier block. I did not place any Vdd since I have read that it is the esd voltage that biases the inverter circuit. Does this mean that the vdd pin is floating? I
If this was (say) an esd clamp, the shunt FET would have a good "hang time" beyond where the load has discharged below a useful Vgs. But I would never use such a structure, its lack of "turnoff authority" on the gate is too much uncertainty to put in my circuits.
Hi All, If I have a inverter connected directly my pad, then how do I layout this inverter protecting from esd and Latch Up issues ? please explain in details. consider for example W/L of PMOS = 200/0.5 amd W/L of nmos = 75/0.5. -- warm regards, krrao.
vin pad is the power supply pad, right? why you prefer to use nmos as this decoupling cap? usually this decoupling MOS cap has relatively large size, so that reactance is relatively small. what's more, you have dedicated esd power clamps between power supply rail and ground, at esd event, the power clamps should work effectively, so that (...)
Design esd using G-nmos method so simple. Just connect Gate of "big" nmos to GND and Drain is connected to PIN. But problem here is the size of nmos? how to determine and simulation the strengthen of this esd structure. Appreciate material or advice, thanks.
For some reason I have to adopt the structure below to provide the esd path from vdd to vss.however, I don't know how to choose the value for R and C. If the size of the nmos changes, how does it influence the esd ability?
Yes sometimes pmos devices are used. They will need a larger area than nmos for the same esd current. They are less prone to snapback breakdown which I assume is why they are sometimes preferred.
hi guys, i have some doubts about esd, would you plz be so kind to help me out. 1. which one is more sensitive to esd? oxide or diffusion 2. why we need to protect the drain of nmos to vin, but not the source of pmos? 3. when using ggnmos, suppose there is an zap from input pin to ground, which mechanic is occurred? (...)
Hi manjula 1. Boost bus: Principle is to be able to use a higher gate bias at the nmos power clamp to enhance the current capabilities of this nmos transistor. There is a landmark paper on this approach by the people (Michael Stockinger et al.) from Motorola (now Freescale): "Boosted and Distributed Rail Clamp Networks for esd Protection (...)
I agree with the esd or perhaps output FETS with Drain ballasting. Also based on large L of the big FETs it might include silicide block. The small ones on the side - I am not sure if those are unconnected. Pic is way to unclear. and wold be nice to have Metal1 photo too
Hello, I have a question about gate-coupled nmos for esd protection. Usually the GCnmos is used as power clamp between VDD to VSS. P+ poly resistor and MOS capacitance are used to set the RC time constant to sense the esd stress to help triggering the nmos clamp, so, when you design this RC triggering (...)
Hi, We are urgently looking for an esd specialist to develop an esd input protection for a power nmos in one of the XFAB technologies. Please send references and contact coordinates by replying to this post. Cheers
h all for power clamp, it has its own gnd called gndesd. And the other analog block of the circuit use analog gnd called gnda. The question is where should connect the substract of nmos in power clamp. To gndesd or gnda?
Hi, I have some nmos transistors with DRAIN connected to IO pads. As per esd guide lines m putting RPO layer on the DRAINS to avoid current crowding, but it gives problem in the extraction of the other devices which are stacked with the same nmos. Any clue here? thanks in advance.
hi, I am confused about esd ability between PMOS(PNP) and nmos(NPN). Why PMOS(PNP) is stronger than nmos(NPN) for esd protection? For example, PMOS esd Design Rule in layout is usually looser than that of nmos. And in some cases, only GGnmos is used for (...)