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18 Threads found on Esd Vcc
I would like to ask whether can I use Vdd = 1.2V for the input stage circuit and vcc = 5V for the output stage circuit ?Yes, you can. However you have to consider following. - Surge Protection - esd Protection - Ramp Up Conditions for Vdd=1.2V and vcc=5V
Hi guys, just saw this esd protection diode circuit, can anyone explain how does the 2 series esd protection diodes work to protect the circuit from transient events thanks 129863 The two-diode clamping circuit will not allow voltages exceeding the positive or negative lead to get t
Were you esd safe? Why are LEDs shown backwards? Each output is 25 Ohm nominal ESR so if shorted to gnd or supply and active in opposite state , current limit from 3V is 120 mA !! I calculate ESR as follows. ( actually internal RdsOn) ESR = Vol/Iol and (vcc-Voh)/Ioh - - - Updated - - - Many kits run fr
Basic debug is verify all DC and gnd and no unterminated inputs on CMOS. Was it ever exposed to esd during assembly, test? Then probe logic levels on all pins including clock, which may be Near vcc/2 on output if no scope.
Hi all, I have a question regarding esd protcetion for contact/POGO pads , and the techniques to handle esd events properly. Setup: I have a 6 layer board that has 4 POGO pads, to transfer power and signals. This board has a FPGA and MCU on it. The board is a 6 layer board, with: 1 vcc layer 1 GND layer 4 signal layers. (...)
Hi In reference to a typical MCU GPIO model today, it seems that many if not all manufacturers would implement a diode to vcc and another diode to VSS on all GPIO inputs. See image for reference example on Rasberry Pi. 93701 1. It seems logical that these diode were implemented for esd protection reasons. However,
Optimal placement of esd suppressors begins at the location of esd penetration into the system. This tactic reduces the esd voltage and current initially experienced by the circuit and attenuates the esd pulse that propagates past the esd suppressor. Design as much practical space as possible between the (...)
Dear all: I use gcldnmos for power clamp esd, when I do esd test vcc(-) gnd(+), found the body diode did not open, and the esd failed at 400V. Anybody knows that?
I am trying to get esd protection for a board that has multiple ICs. I'd like to use TVS diodes, because they're small. Does each vcc pin on each IC need its own TVS diode? For example the main MCU has 7 vcc pins, does that require 7 TVS? thank you
Or you can use an alternative esd protection approach: Take out the diode between IO and vcc (which is causing the problem) and replace it with a local protection clamp between IO and Vss. You could just use the same cell as the powerclamp if the dual-diode + powerclamp is effective (esd protection) in the current IC implementation. The (...)
Hi Similar to Leo_o2 I have heard from some experts in RC-MOS clamps that it is not so easy to implement this protection type in High voltage technology but it could be due to a lack of experience in HV. But using a snapback (gg)NMOS for HV technologies is really problematic. I have worked with number (10+: 0.7um --> 0.15um) of HV process tec
Shorting all the pins, then the least resistance path of flow of current is the wire itself...PMOS is of no use.... It's right! This PMOS will not be used as esd device unless the metal between G and D is broken.
Hi, Most i/o of digital circuits contain some kind of esd protection circuit, which frequently consists of clamp diodes shorting the esd zaps to vcc or Gnd and limits the maximum i/o voltage of these devices to vcc + (1 diode voltage drop). 1-I know this will be a silly question but, if applying a voltage higher than (...)
when doing esd design for vdd/vss, we use the gate grounded NMOS. why is it so? i also came across design that have a R at its gate and tie to GND. what is the difference? what is the advantage of using the R? is it to provide a low impedance path? or is it to prevent ruptures of the oxide. thanks
esd model:HBM , Pass Volt:2500V Pin DVSS and Pin AVSS pass :vcc, DVSS TO AVSS (+) vcc, AVSS TO DVSS (+) AVSS,DVSS TO vcc(+) Pin DVSS and Pin AVSS no pass: vcc, DVSS TO AVSS (-) (...)
My IC uses a open drain LDNMOS for output. The Vout.max is 20V and core circuit is 5V system. The esd testing was fail when OUT-vcc+ and OUT-VSS+ zapped (only 500V). How to improve esd ? Thanks
My previous design has a pair of source follower output pins. Unfortunately it's esd immunity in human body mode can only pass 1KV. The experiment result shows that the nmos to vcc fails. Is there any one to give me a guide . Our design uses TSMC 0.35 polycide, and the nmos follows esd design rule in addition that it's size is only 100um (...)
I think it is vary with your application. large gnd plane is better for esd,but it is worse for emi because of it large loop area.