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102 Threads found on edaboard.com: Floating Gate
I usually have a gate to source resistor to avoid gate floating. But now I want to switch high side as well, in this case, I'm bit confuse. If I use gate to source resistor or gate to ground resistor ? 137552 I think second(gate to Ground) is better, because if load is not connected, (...)
It's worth pointing out that you should also have a resistor from the gate to source or gate to ground, otherwise the gate is left floating when the switch is opened. Also, using normal battery symbology, you have the positive at the top so the diode in the MOSFET will conduct all the time! Brian.
Hello, I need small help regarding the floating gate device. I am designing a non-volatile memory cell and foundry does not have model for floating gate . So I used the Voltage controlled current source to mimic floating gate. For output characteristics, I already had the measurement of (...)
there is a chance I missed something You obviously did. The circuit can't work with floating gate input. Try: 128845
Hi, We are experiencing a drc error on one gate of a test chip. The signal goes to a MOM cap and a pimplant resistor chain and no where else. This gate signal is now being flagged as a floating gate with the drc error as PO.R.8 { @ It is prohibited for floating gate if the effective (...)
Hello! Excuse my ignorance but I was reading about Photovoltaic Generators used as FET drivers, and the implication appears to be that operation only requires an initial pulse signal to drive a FET Vth on, with the PVI driver having it's own floating voltage source to manage the FET Vgs threshold. Is this correct? It's hard for me to wrap
The datasheet specifies that there should be a minimum 10 V difference between the gate drive supply and the floating supply voltage. No, it doesn't. You misunderstand the meaning of Vs. It's the floating ground of the high side driver, usually connected to the half bridge output node.
The property is the gate capacitance during commutation. The configuration with the least accumulation of charge is (d) which has the least substrate capacitance to B or S is best for floating capacitance.
Think! The floating gate transistor relies on non-linear behaviour of the capacitors, tunneling of electrons at higher voltages. You need to model a similar behaviour in your simulation.
Two problems: 1. when U1 is turned off, the triac gate is effectively left floating. Try adding a resistor between U1.4 and L22, suggest trying 1K. 2. depending on the type of lamp, the leakage current through the snubber network may be sufficient to operate it. At 50Hz it has an impedance of ~31K so around 8mA may flow through it. If you are usin
Due to these inputs are statically set, it wouldn't make any sense in principle, but assuming that it is really what you saw and also considering that exist a science behind such an implementation, I would try a long shot to say that could be a way to minimize power consumption, or avoid leaving non-used inverter gate inputs floating.
As we know FETs have three terminals: source, gate and drain. Open source means that the source terminal is floating: it is no connected to either the GND or the VDD of the power supply. In this case you must use a pull up or pull down resistor depending on the connection. Open drain means that the drain is floating. You must use a pull up (...)
Is it a handwritten SPICE netlist, what should we check it against? There should be a circuit schematic. At first sight I notice a nonglobal floating gate node in the vcocell subcircuit, so I believe at least this circuit part won't work.
The transistor circuit that drives the gate also should connect to pin 1. Yours does not connect to pin 1. Then your connection to the gate is floating and does nothing. The transistor in an opto-isolator connects to the gate and also connects to pin 1 of the triac. How do you prevent somebody (or yourself) from being (...)
Hello there, I have designed a 3-input NAND gate by capacitor network connected to a NOT gate. this circuit functions well. recently i have found out that when inputs are stable and a noise occurs in node g, functionality of my circuit fails. this is because of node g which is floating point of my circuit. given that inputs are logical (...)
An attempt to distinguish between NVRAM and other non-volatile memories in a FRAM (ferroelectric RAM) background paper: The major difference (beside nonvolatility) between RAM and ROM type devices is the difficulty level of write-operations. Traditional nonvolatile memories derive from floating gate devices that are very difficult to write
The tunneling node will be driven to high positive or negative voltage to drive charge into the floating gate. However this schematic looks like it's missing something - there is no explicit return path for the tunneling current. I have seen other schemes where there is another electrode on the tunneling FET.
It cannot direct supply to the PMOS gate without any resistor? You probably can, depending on the control voltage source. Two points should be considred however - you don't want to leave the gate terminal floating - if you supply a higher voltage than +/- 20V between gate and source of the MOSFET, the transistor will (...)
ESD is about current but everybody talks about the voltage. Where is your current path in an all-shorted-to-GND device? Right. Now, lonely gates with a huge chunk of metal can be an antenna charging threat. But that is not ESD. An implanted resistor region makes a swell antenna diode. A floating (like poly) resistor is not going to prevent ante
Dear All, I am trying to simulate a semi-floating gate current mirror seen in fig1. How to get the graph as output, what sweep should I make? Fig 1 97141