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52 Threads found on Fringing
The calculation is wrong, either for ideal magnetic circuit model or for real circuit (considering fringing field). As for the ideal calculation, where is core ?r in your formula? Your calculated value gives a correct estimation if ?r >> le/g ?e = le * ?r / (le + g*?r)
This difference in length is due to fringing fields around the antenna, which makes the printed antenna seem longer. For example, when designing a patch antenna its lengths typically are reduced by about 4% to achieve resonance at the desired frequency. With the increase in height of the dielectric material, the fringing fields from the edges incre
Hello All, I was wondering if someone might be able to help me determine the fringing capacitance due to a parallel plate with an extended dielectric? My test project (attached below) is just a simple two parallel plate setup with a Lumped Port connecting the two at the center of the two square plates. I set the resistance to 1ohm and the rea
Hello, What is the relation between the dielectric permittivity and the fringing on the edges of the patch? does this have any relation to the radiated power, the efficiency and the bandwidth? your help is appreciated. Thank you Kawther
in your second model, the lumped equivalent circuits shown in the pink box look like the Z1 of the first model. So, to a first order they are the same. I personally think the 2nd model is a little more useful, since it has elements that correspond to the physical reality of a probe coupling. i.e. there will be fringing capacitance to ground, an
Hello, I am going to simulate a proximity sensor based on measuring fringing capacitance in CoventorWare. However i can't find anywhere if CoventorWare is able to simulate such capacitance, or maybe just the direct one. Thanks for anyone who can anserw my question.
In Step Width Junction discontinuities the effect of the fringing capacitance associated with the wider line of the step discontinuity is similar to an increase in the length of that line. The discontinuity capacitance C that appears due to the discontinuity has the effect of an increase in length of the wide line (2.8mm in your case), and an equal
Decreasing the height of the substrate reduce the radiation loses but make the microstrip line thinner, with higher ohmic loss. Increasing the height of the substrate, the fringing fields from the edges increase, make the effective length of the line longer, and the input impedance of the line become slightly more inductive.
Not quite. That is contradictory. For a dipole you can choose 1/4, 1/2 and 1 wavelength. Resonance is non reactive just below theoretical due to fringing and thickness. more details here 1/2 wave is most common.
Depending on modeling philosophy (and particularly important to things like RF switches and CMOS PA antenna-matching) the metallization - gate poly fringing capacitance may be separately, specially treated (de-lumped from the gate-source, gate- drain silicon-thinOx-gatePoly plate and fringe) in the layout parasitic extraction and the SPICE / Spectr
In a purely theoretical sense, a monopole will be resonant when it is quarterwave, 3/4 wave, 5/4 wave... a dipole will be resonant when it is half wave, full wave, 3/2 wavelength. But in reality, there are feedpoint issues, fringing capacitance issues, non-infinite ground plane issues, nearby objects causing effects (like a human body). So, on
well, of course. If you have a microstrip patch antenna, for instance, you must forshorten the patch length x width to compensate for the fringing capacitance along the patch edges. Otherwise it resonates lower in frequency than desired.
i have a spreadsheet that will tell you the inductance but it won't tell you the increased inductance due to fringing flux and all that. so in practice, you will be building a few prototype transformers and grinding the cores down, then later measuring the gap.
Hi, The problem is I need to find the surface potential where in the electric fields are elliptic (fringing fields). I tried to find the solution when there were one dielectric by using con-formal mapping technique which i succeeded. But the problem here is there are two dielectrics permittivity of 1 >permittivity of 2. Therefore There is a
Somewhere in your PDK docu (e.g. in the "analog characterization" description of your process) you should find metal-to-metal and metal-to-substrate capacitance values for each metal layer. Together with the calculated area of the route - if necessary including its fringing capacitance - you can estimate its total capacitance.
There is fringing capacitance where the lead in/lead out line attaches to the via. The via itself is somewhat inductive. So you end up with a lumped element model of a shunt C - series L - shunt C. For lower frequencies (<10 Ghz) the capacitance and inductance is such that at least 2 ground vias are needed to keep the insertion loss low. Up a
Almost any oxide cut under the cap will -increase- bottom plate capacitance, by reducing Tox(). However in a non- planarized technology you might be able to -increase- the Tox() by surrounding the cap with rings of poly and metal, making the spin-on-glass "pond up". But then you would pick up these fringing capacitances. A bottom plate that is el
Someone else asked the same sort of question some time ago on the EDA forums, when his simulations with Sonnet showed an increasing capacitance with frequency, and he did not know why. Someone posted a PDF for him to read
The Cdg ought to drop for a while as the drain junction pushes back from the gate, but will eventually flatline when the metallization fringing capacitance becomes all that's left. With these FETs perhaps representng different generations, perhaps that corner is just off the chart for the EPC1013, or the device's useful Vds range ends before that
Does anyone have a specification of the APC-7 connector? I'm wanting the mechanical specifications. My aim is to put a 3D model of an open-circuit APC-7 connector into a 3D EM simulator, find out how the fringing capacitance varies with frequency, then try to work out the coefficients which could be fed into a VNA so this could be used as an op