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I'm conducting the Silvaco Atlas 2D simulator for designing a high-k dielectric double-gate mosfet. For beginning, I found a good example from the internet: The authors have used HfO2 and SiO2 separately in order to compare
by calling it N channel do you mean its basically a IGBT equivalent of a NPN bipolar transistor, except that instead of a gate that conducts it has a isolated mosfet like gate(whatever the IGBT inner structure was) ? Not quite. it is equivalent to an n-Ch gate driving the base of a PNP. so think of it as (...)
Hi I want to compare a logic gate (for example nand,or,and,not,...) performance based on mosfet with the same based on ofet now I have several question: 1-should the circuit topology be same in mosfet and ofet based? 2-is it correct that compare 0.18um mosfet with ofet that has 25um length?
Hi, You go to an online shop, search for Standard logic gates, then choose one with that name, pay for it, and it comes through the post a few days later. :) I'm not a programmer, I don't know what you mean. Do you mean how does a person create an edge-triggered flip-flop in a microcontroller? No idea, sorry, that must be difficult. Does the i
You want to use the largest device you can, to drive down the relative contribution of other capacitances (W-dependent cgdo, cgso especially, but also the stray routing and pad parasitics - or you want an equivalent layout minus the test FET, for de-embed). Then, you want to drive the gate to its maximum "on" voltage to minimize series resistance
Hi, I have a design which has a 100Kbit SRAM. I have been able to synthesize my circuit with design compiler and I know the gate count (total area divided by smallest NAND2 area) of all circuit except the RAM. I don't have any memory compiler to find its actual size. I just need a rough estimate of the extra gate count that I will have because o
The voltage at the gate is equal to the voltage of the drain. There is a current source from drain to source - so, this behaves like a resistor with resistance 1/gm (dependent current source depending on voltage across it = resistor). If you include ro due to channel-length modulation, then that's in parallel with 1/gm - but is likely to be smaller
I want to model the following attachment by matlab simulink. but I don't know that what is "TSC4429" IC! it is "gate driver" of "Q transistor". can you give me datasheet or equivalent circuit of "TSC4429" IC? how model it in matlab simulink? 116531
Hi all! Im new on using the cadence tool COnformal Ultra LVR. It says that "Conformal LVR enables formal verification of the final SPICE netlist against the golden RTL or final gate-level netlist to ensure that the design taped out is functionally equivalent with golden RTL and the final gate-level netlist." My question is that what is (...)
hello everyone, i am trying to find IR2110 gate driver IC in Proteus but unable to do so. can anyone uide me what to do ? i am using proteus 8 professional. thanks in anticipation
... the channel thermal noise does not move to the gate of the transistor? In reality it doesn't move to the gate, of course. But if you need or wish to model its equivalent gate noise voltage, you can use the thermal_noise_current/gm formula to get the equivalent thermal gate noise (...)
I think your result is not correct, Mahmoud, sorry! It neglects the relatively low input impedance at the source of this common-gate stage, which is in parallel to R4 and might be comparably lower than this, and the output resistance Ro of M1, as well as the parallel (to RD) load resistors R2 and R3, which are connected to a virtual GND. Your
I don't have LSpice loaded here at the moment but I see you are using STD5NM60 , N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET The key factor is latency from input and output capacitance with driving gate & source resistance* capacitance in each case for turn off delay. 1. Coss eq. is defined as a constant equivalent capacitan
You get a non-linear relation Vds=f(Ids), you need to specify either Vds or Ids to calculate a small signal rds = dVds/dIds or large signal Rds = Vds/Ids. In any case, they don't depend on gate resistor R.
Hi, I am not able to understand how fault collapsing done in case of transition faults(slow-to-rise/fall). Just take for example an AND gate. there are 4 collapsed faults for stuck-at(assuming no fanout). a/0 , a/1, b/0, b/1, c/0, c/1 11 01 11 10 11 00 (or) 01(or) 10 a/0, b/0 and c/0 are equivalent faults so,
I presume, you'll use anti-parallel SCR combinations as AC switch, functional equivalent to a triac but with different gate control. They are also available as module in a single package. Heating applications are required to use full-wave switching by power quality standards.
I have a problem with "Total equivalent gate count" in ISE. In new ise (12 or later) there s no "Total equivalent gate count"!!!! I am looking for option but there is no option. Has anybody faced this problem?
hi all I am doing gate-level formal verification. after formalpro, how to know formal verification pass or not? what is the key words? which file can find this message? which file can find which pin is mismated ? formalpro User guide seems can not find any description about them?
Not S21. Maybe you meant S12? Think also the "Miller Effect". How the equivalent input capacitance of an inverting amplifier gets whatever little feedback capacitance existing between the input and output terminals amplified by (1+Gain). For an oscillator, there has to be some way a portion of the output gets to wiggle the input gate r
Hi Gajen, It might not be possible. The new netlist will be equivalent with the old netlist, but it will not be exact replication. Netlist is a gate level representation of an RTL created by synthesis tools. Regards, Ganesh