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152 Threads found on edaboard.com: Gate Leakage
Usually, for off-state regime, leakage current is the right metric, not the channel resistance (there is no channel, it's turned off by the gate) - even though these two characteristics are related. Asking which of these three devices has highest leakage is similar to asking which car is faster - BMW, Mercedes, or Subaru. This question (...)
Hello, I am a student studying ESD. As far as i know, the main failures of ESD is a breakdown of gate oxide and the thermal breakdown of ESD protection or clamping circuit. So, I tried to take a picture of the breakdown point. First, prepare a failed sample by ESD event. (i measure the leakage current) Then, Dip it in a HF to erase the patterns.
The leakage inductance example results in < 10 mW snubber losses and shouldn't involve design problems for a RCD circuit. The low Vds rating imposes a low switch duty cycle and tight snubber dimensioning and doesn't sound reasonable. Although C555 can drive MOSFET gate you'll probably want a dedicated driver to reduce switching losses. [COLOR="
LTSpice may not be the best tool for this. If you want to do it like device engineers do it, you would set up to pull I(D) from two different points of Vgs, and do the math. Or you could put two FETs at two different voltages. Whether you prefer VTlin or VTsat is your call. VTlin eliminates some of the short channel's effects (lambda / Early vol
If you're referring to characterizing (say) logic gates made with low threshold, standard threshold and high threshold transistors (as serve speed-critical, "regular" and low leakage purposes respectively), each gate needs an accurate timing model and a gate made with a different VT implant-pair will show very different (...)
The switch can not be really turned off due to the drain-bulk and source bulk current. The psub and drain or psub and source form the diodes, and pusb voltage is ground. When switch is off( gate voltage is 0), the two diodes are reversely biased, but there is still some tiny current going through the reversely biased diodes. Say if the volt
The circuits you have seen will have an active circuit driving the gate. That means the driver will make the gate voltage go to (or close to) the source voltage and prevent the MOSFET conducting. The problem you observed happens when nothing drives the gate at all and residual charge or interference pick-up keeps enough gate (...)
High Vth in power FETs means a high gate voltage swing means high switching losses. In IC technology, you have to position VT to best deal with the leakage power vs drive strength / speed "box". Here you often see multiple VTs in the same flow so that you can optimize near-static logic, and high speed clocked circuitry separately. An "easily in
Hi I wonder how to measure the DC gate leakage current. In some papers, source meter unit (SMU) is used to measure the DC gate leakage current. But, if possible, i want to measure the gate leakage current without SMU. Is there any way to measure the leakage current (...)
how to calculate gate currents(leakage) in SRAM cell especially in cadence
Are you sure this is memory leakage? Couldn't it be a forgotten - unused - gate, i.e. a connected NMOS/PMOS pair with open gate and output? That's enough for too much "leakage" - it's cross current, of course. According to Murphy's law, the unconnected input always drifts to the worst case potential, i.e. to the center of (...)
The gate-source forward leakage current of a IRFZ44 Mosfet when its Vgs is very high at 20V is a maximum of only 100nA which is 0.1uA. Then its input resistance is 20V/0.1uA= 200M ohms and is much higher when the input voltage is less. I have never seen a resistor with a value higher than 20M. The datasheet specifies typical switching speeds with
I have 8ohm heating element in series with N Type thermocouple. This is powered +30V over N-Mosfet transistor on high side. Why high side, because thermocouple voltage is measured when heating element not powered. Zero gate voltage leakage drain current make on 8ohm any error voltage. For example IRF3205 have max leakage 25uA for 25C (...)
JFET is about the simplest structure you can make. It has some usually-undersirable features, such as needing to drive the gate beyong the source rail (which voltage you may not have, or care to create). This relegates them to applications such as cascode guard transistor (see some GaN power devices doing this, GaN FET over NMOS switch) and
i'm taking it that pnp not necessary in such case because the greater voltage across the pull down resistance means you get fast enough switch off, as long as your series R's aren't too big. Another point is the ringing seen as the pulsing of the hi side pulse transformers begins (as seen in the first few 100's of microseconds of the above ltspice
Hello, I designed the schematic (picture attached) , and my question is about the pull up resistor R1 when I choose a value of 4MOhms I notice that there is a difference of voltage of 1 V between the supply (4V) and the gate of the PMOS and this difference is reduced when I decrease the value of R1 (0.5 V for 1.5 Mohms), is this due to the leak
A short channel modern digital FET may leak nA, but almost any useful digital node will still provide you an I/O transistor pair with thicker gate ox, higher VT and lower leakage especially if you go longer than minimum L. A capacitor transimpedance amp, such as is used in some focal plane imager readouts, might be a good compact approach (smal
The relation is ad hoc, but driven by physical realities (reliability at high fields, leakage / breakdown). The relation is fuzzy because there are tradeoffs to be made in vertical (gate ox) and lateral field distribution that affect hot carrier and gate oxide wearout reliability, and value judgements are made based on application, the (...)
Hi All, I am trying to make an AC switch using a triac. The schematic is attached. The issue is that with no gate signal applied, there is a small leak. The test load is a 10W lamp at 240V. The lamp flashes weakly on and off when no gate signal is applied and turns on brightly (as expected) when the gate signal is applied. I (...)
STI only improves leakage relative to predecessor isolation techniques such as LOCOS. There the large-ish "bird's beak" (region of tapering oxide thickness, with low quality oxide) creates a small soft parasitic FET with less than ideal gate authority over the surface below. STI makes this more abrupt and can be (not necessarily, is) a thinner ox