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256 Threads found on edaboard.com: Guard
Hello, I am designing an amplifier for high-impedance piezo sensors on a non-inverting configuration. Since this should be as low-noise/low-error as possible I was panning to do a guard ring around U1 input pin (3: V_IN+) and connect to 2:V_IN-. Is that a good idea? Should I remove ground plane bellow this input in order to minimize parasitic
Hi I am designing a capacitive touch switch board using CAP1298. It has been mentioned in the datasheet that the CS5 pin be used as a signal guard. In my PCB, i have included the signal guard around all touchpads on oneside of the board. Should i place the signal guard on by board's bottom also, or simply is it enough on one side alone?
If you are after minimum supply induced noise in a (say) RF amplifier, you might connect the deep NWell to substrate potential, and the PWell's guardring or tap as well. This will give multiple layers of Vss-referred capacitance with no real supply coupling path. If you tie DNW to VDD and PWell to VSS then you have a large-ish coupling cap to the
Some parameters of your specification don't fit well together. A differential current source can be hardly implemented without finite common mode impedance. Achieving nA signal magnitude, ns rise time and 300 V common mode voltage at the same time sounds unrealistic. At least need a third terminal acting as signal ground or guard potential. You
1)latchup prevention, To reduce disturbances from minority carrier, guard ring around noisy transistors can be used. guard ring considerations are as following, (i) NMOS in the p-substrate with should be surrounded by N-well guard ring. N-well guard ring should be tied to VDD. The N-diffusions from the NMOS could inject (...)
for analog you usually have lots of power concerns and interaction concerns (such as guard rings). it is likely that the analog blocks do not use the same power source of the digital parts and floorplan has to especially take that into account. analog usually requires pads that are specific for analog, and you will most likely want to place the ana
I'd suggest 3rd ring (n+/dnw) : float/VDD 2nd ring (p+/pw) : 0 1st ring (n+/pw) : float/VDD A VDD connection of the n+ guard rings can raise the whole VDD net well above its normal voltage level - which can absorb a lot of energy during ESD breakdown - if not the VDD protection itself limits this voltage too much. In this latter case, float
Hi, Confused about the order in which ptap ring and ntap rings used in double guard rings. which one should come in the outer region ? and which one should be inner? and why? I read both way (either p+ outside or n+ outside). Please explain with sufficient reason and why not the other method? If both ways we can use please mention the scenario.
If you go to slide 13 of that set, what he calls "level shifter" is what I would call the cascode "guard" devices (as opposed to the cascode "masters", your current mirrors) in a cascode mirror stack. I doubt my nomenclature is popular but have seen none I like better.
There is a design philosophy called "mobetta"... If you want to extract minority carriers from Nwell then you need some P+ plugs there. PMOS S/D might suffice, but walling the Nwell with N+ outside P+ would ensure that any carrier trying to diffuse in, would hit that getter junction depletion region and sweep out. Maybe you could show a picture o
Hi i need to make a guard ring around pmos. I need a p diffusion guard ring. So is there a specific way to create the guard ring. I mean i wasnt able to find a particular layer in the LSW window for guard ring so i searched online and i saw some places they were mentioning some layers that i can't even find in cadence. Can (...)
hello! I am new to HFSS and am not sure how to excite my capacitor structure. It is a cylindrical capacitor (plates along the curved edges of the cylinder). I am stumbling on how to excite it, as I have 3 electrodes. I'd like to be able to have the high electrode at +V/2, low at -V/2 and the guard electrode at 0 or +V/2. Is this possible?
I view that difference in resistance as trivial, and probably due to the operating point differences between wide swing and classical cascode operating points. The Vds is likely partitioned differently and my gut feeling is that the classic version has the guard (upper) running with lower Vds, so closer to linear and less improvement to Rout. You m
What is more important for EMI shielding effectiveness with respect to guard traces and via fences, the width of the copper trace that circles around the area or the distance between the vias to ground that connects to the trace and the other ground planes? Are both equally important or is one important and the other not so much? Any good web re
Thanks for replying! I find a tutorial for IBM process. It is useful Hello kky1024, I have the same problem with the chip edge and chip guard ring. Could you share the "useful IBM process tutorial". Any body have another reference? Thank you!
Hello, For nmos, usually guard ring is connected to a separate and quiet GND. But in this case, the source and bulk are not at the same potential. So there will be body effect that has influence on vth. So the guard ring reduces substrate noise, but increases body effect, am I right? For analog design(like a PLL), if the current is very smal
Hi friends, Can any one please tell me the reason for using double guard ring (i.e.PTAP,NTAP) in a block which has both PMOS and NMOS. Thanks, Karthik
Hello all, For my specific problem I need to increase some PMOS NWELL sizes from the PDK transistors. In my simulations I always used 5 terminal PMOS (S G D B PSUB) devices. However in the layout, there is already a guard ring around the nwell, leaving no option to draw a bigger NWELL. I tried to use a 4 terminal PMOS (without PSUB) in lay
Hi guys, Because I have some space left in the layout of my comparator, I thought that I could fill that space with contacts, in this case I am referring contacts to the n-well. Is that ok? You can see the picture bellow: 112730 Thnks in advance.
What type of conductor you have used for guard ring ??And why you have used a guard ring ?? What is its purpose ?? How you have simulated Q factor, which set-up you have used ?Two port s-parameters or one port is short circuited ?? You have to mention some details...