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63 Threads found on edaboard.com: Internal Capacitance
They say a jfet is like a triode. I want to design a triode version of this oscillator the source gate capacitor is formed by the internal capacitance of the fet, but I won't mind adding one in the tube circuit. the tube will be the 12dw8 operating at an anode voltage of 12v. Please give me hints where to star
Hi, This little crystal oscillator I have designed by trial and error, uses crystals or ceramic resonators to oscillate at HF. There ia a "hitten" capacitor formed by the internal capacitance of the gate-source of the FET. When I set the source trimmer at extreme ends (especially at low values, max OSC gain) the oscillator changes frequency by a f
I need simulate an antenna in HFSS for RFID. The internal impedance of IC at 915MHz is 12.8-j248 (NXP UCODE7). This is a serie impedance. To simulate this impedance I use a Lumped port with equivalent parallel resistance Rp ~ 4.837K and a capacitance of 0.7pF in parallel using a lumped RLC. Both in parallel connected to a dipole input. Antenn
I have skipped a cell and noticed that StarRC treats these ports as conductors thus attaching the associated R's & C's to the ports coming from the internal metals of the skipped cell, I am not successful in removing the capacitance to these ports, any ideas how to do this in StarRC? the R's were removed by turning the netlist port = superconductor
Your fets not good for Phase shift full bridge (PSFB). They have much Cds capacitance, and also, the internal diode is relatively slow?and you make this worse by paralleling there are two to reverse recover?.and also?..you use two, so there is even less I(FET)*Rdson voltage to reverse recover the intrinsic diodes with. For PSFB, you mus
I have never seen TVS diodes for overvoltage suppression in fast MOSFET circuits, they are slow and adding unwanted capacitance. Short, low energy spikes can be absorbed by the MOSFET avalanche capability. It's not unusual that the internal Vds of fast switching MOSFETs has an overvoltage by working of package inductance, driving the MOSFET into av
1- The two lists give values for internal capacitances which one should I use? Depends on what for. If you need the total capacitance of a node, use those with double characters: cgg , css ... It's always meant as capacitance against the "0" node, mostly GND . 2- In DC
Hi, * faster feedback path * regulator internal feedback * less load capacitance * (small) resistance in series with capacitor Klaus
- BSC0904NSI spec has a 30V Zener internal to Vds - yet you have a 60V zener (D1) added as shown in the simulation with 60V pulse. - regarding resonance, it appears to be 125kHz when switch turns off which with 3425uH is approx 473pF similar to the values of Coss of MOSFET and diode capacitance at 20V - the decay rate is related to the Q o
Electrically, yes, it doesn't make much difference in what form the inductor is as long as the current is small enough not to saturate it. However, the 'Q' factor of a small inductor like that will be much lower than an air cored coil and it's own internal capacitance will make it's self resonant frequency much lower. It's DC resistance might be hi
All transistors have Miller capacitance which is from the inverting output to the input. In a differential amp , by adding caps by cross over ( From + out to + in and -out to -in ) from internal differential outputs, it tends to cancel the negative feedback with a lesser positive feedback with non inverting current or negative Miller Effect . Whe
How to calculate internal parasitic capacitance of bit line and bit line bar in 6T SRAM using HSPICE?
capacitance varies with voltage. a 10uF, 50V capacitor is not having 10uF of capacitnace at 50V...Check the characterstics from Datasheet. 10uF capacitor can easily handle 300mA ripple current with very less internal temperature rise because of it's lower ESR. But, it is not recommended to use Lower voltage caps on higher voltage rails. If any f
STEPS for n channel mosfet 1) Set the DMM to the diode range. 2) Keep the mosfet on a dry wooden table on its metal tab, with the printed side facing you and leads pointed towards you. 3) With a piece of insulated wire stripped at the ends, short the gate and source leads of the mosfet. This will initially keep the internal capacitance between
Just increasing the Vcc of the oscillator you can get an increase in frequency (due to lowering the internal parasitic capacitance's into the transistor). Unfortunately in your circuit configuration cannot help too much because in the collector of the oscillator you have the modulator. The best to get higher frequency, and even more stable than Col
Hi all, I am experiencing something in Momentum S-param simulation results which seems strange to me. I am simulating a piece of metal on a 2-layer FR4 substrate to see its capacitance to the ground. I use a rectangular piece of metal (Cond) with no Cond2 on the bottom. I put two internal ports on two opposite sides of the rectangular and do
I don't know mikrobasic, but is that "Button" routine supposed to do the debouncing? If the thing works with a short cable, but not a 5m one, then you are probably picking up noise in the cable. Do you have internal pullups enabled on the PIC inputs? (I don't think it would work otherwise). Another thing to consider is the capacitance of the cabl
Did you activate the AT90 internal output pull-up resistor? If so, its resistance may even be too large to load the ≈1nF gate input capacitance of the IRFZ44 in due time. Try and add an external pull-up resistor (suggest: 470Ω) between +5V and the AT90 output pin.
Dear All Dear friends in this image , a block with internal capacitance and resistance. Kindly, what is the simulation and measurements method to extract the value of both Note: consider please using the only two ports from the circuit Thank you
I'm missing some points in the discussion - OP input impedance parameters must distinguish between differential and common mode - depending on the OP internal structure it may be necessary to perform the measurement in a closed loop setup, at least with suitable DC bias In a case of doubt, I would refer to the known internal OP design and co