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374 Threads found on edaboard.com: Inversion
You should not look at this half circuit as exact physical replica of the actual circuit. In he diff amplifier you close for example the feedback between one input and the output of the other half. However, you need to have some means of circuit analysis and the half circuit is good for that . Just think that there is an ideal inversion between the
... an op amp design project that employs gm/id and inversion coefficient (IC) sizing methodology and it has to be novel idea. What about using a (rather) new opAmp topology like, e.g., the paper below, and develop an appropriate IC sizing methodology "construction kit", which is able to size all the topology's transistor
I also have question similar to 1. Essentially, some of the the papers on gm/id methodology use the strong inversion and weak inversion regions ? e.g the output stage in a different region, why should that be ? Any explanation would be appreciated!
Hello All, I have some questions about cmos comparator design. I need to design a very low power comparator. The Vdd = 3.3V, Midband Gain ~55dB, GBW ~500KHz. The current needs to be as small as possible. I plan to put the differential pair in subthreshold region and the rest of the transistors in strong inversion or moderate inversion.
Hi youyang, 1) If talk about output resistance, it can be expressed as Rds=Va/Ids, where Va=Coeff*L. In this connection Rds is independent from inversion level. 2) Because Ids is more sensitive to Vgs the current mirror based on devices operating at weak inversion (sub-threshold) suffers from increased mismatch and noise comparing with strong/m
Device Switching is fastest at low temperatures. This isn't necessarily true in all cases. In some process technologies there is a phenomenon called temperature inversion. In this case, a ss0p81v110c operating condition corner might be the same speed or faster than the ss0p81v0c corner, for example.
I could actual not refer to the equations but the vdsat is defined from the strong inversion to the subthreshold range. The first model equation known to me was the EKV model which use a single equation for both ranges. There was also the defintion of the vdsat. In subthreshold the lower limit is Vdsat=m*Vt where m is the subthreshold slope.
i want simulation steps in cadence for C-V Characteristics of I-PMOS(inversion mode PMOS)., please reply me as soon as possible., Thanks in advance
It's normal... you watch these wavefom single ended and differential oscillators create such waveforms.Because the voltage at each branch rises from zero and reaches to VCC but due to treshold voltages of the output source followers, waveform never drops to exactly zero.Around zero voltage, the MOS is almost OFF ( or weak inversion mode ) and just
check the Avt parameter (pelgrom coefficient) for the transistors in the original models and the extracted parameters (if wafer health report is available). This increase in variation should be because of the increase in mismatch. Alternatively the current mirrors might not be operating in sufficient inversion , resulting in a larger mismatch ef
hi guys i would like to have any information on temperature inversion , links to sites , papers and attachments will be keenly appreciated..thankyou
It's unclear, if you are talking about signal inversion (needs an inverting amplifier) or power supply inversion (needs a DC/DC converter)? Clearly, an amplifier needs a negative supply, to be able to source a negative signal.
In general, yes. Once you implement the clock tree there may be new violations that come up in the fast corner due to skew, but this is after the synthesis stage. Also, for designs in 65nm and below, you may want to check the temperature you are using at your slow corner. Temperature inversion effects can come into play that make timing worse at yo
in mosfet, this effect is referred to as channel length modulation. after Vds exceeds Vgs - Vt , the layer of inversion charge near to the drain disappears and we say that the channel has pinched off. Further increase in Vds will cause the layer of the inversion charge in the channel to shrink away from the drain further, this reduces the effective
Hi all How to find the inverse of a binary Matrix A , Note that the summation is replaced by xor operation. searching for another matrix B such that A*B=I ( with xor instead of summation) is not efficient, is there another solutions ??? Any ideas?
Anyone got any information on the effect of backbias on mismatch? I have a circuit which is varying more than expected. The foundry model doesn't take the effect of backbias on the mismatch, which could be part of the problem. I found a few papers which showed mismatch was worse with backbias, particularly in weak inversion but only limited data so
The datasheet shows that the inputs of a TL08x do not work when one input is within 3V of its negative supply voltage. It is called the "phase inversion" problem.
Vovan76, the reason you check stability at 0db gain is that, as was said before, the denominator of the gain becomes 0 and the closed loop gain is infinite. That means, even with no input applied, your system will produce some output (because of noise, disturbances etc.). This is of course valid when you have an inherent inversion in the loop and y
... why GM first increases then decrease? Is there any paper or patent to explain the theory? gm/Id is maximum in weak inversion, s. the papers below:
Charge pump leakage ("stronger" = "leakier")? could be pushing the loop out of lock; transient misbehavior in switching all that stuff between modes, might introduce a large charge-slug, a design "oops" might introduce a phase inversion or skew, etc. Changing charge pump strength might make the loop filter go unstable. Loop amplifiers with non